TO-126 Plastic-Encapsulate Transistors Transistor(NPN) FEATURES P
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3DD13002
TO-126 Plastic-Encapsulate Transistors Transistor(NPN)
FEATURES Power dissipation :1.25 (Tamb=25 Collector current Collector-base voltage (BR)CBO :600
2.COLLECTOR 3.EMITTER 1.BASE
TO-126
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-basebreakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol Test conditions UNIT
(BR)CBO (BR)CEO (BR)EBO FE(1)
=100mA =200mA =10mA =200mA,I =40mA =200mA,I =40mA =10V =100mA f=10MHz B2=0.2 =100mA
current gain
FE(2) FE(3)
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time
CE(sat)
(sat)
CLASSIFICATION FE(2)
Rank Range
9-15
15-20
20-25
25-30
30-35
35-40
TYPICAL CHARACTERISTICS
3DD13002
,COLLECTOR-EMITTER VOLTAGE(VOLTS)
j=150
hFE, CURRENT GAIN
Ic=0.1A
-0.3A
0.5A
1.5A
0.02
0.03
0.05 0.07
0.002
0.005 0.01
0.02
0.05
-COLLECTOR CURRENT(AMP) Current Gain
BASE CURRENT(AMP) Collector Saturation Region
=(sat)@I =(sat)@I
0.35
VOLTAGE(VOLTS)
VOLTAGE(VOLTS)
0.25
j=55
=-55
0.15
0.05
0.02
0.03
0.05 0.07
0.02
0.03
0.05 0.07
COLLECTOR CURRENT-AMP Base-Emitter Voltage
Ic-COLLECTOR CURRENT(AMP) Collector-Emitter Saturation Region
COLLECTOR CURRENT-(uA)
=250V
=150
C,,CAPACITANCE(pF)
FORWARD
REVERSE
-0.4
-0.2
+0.2
+0.4
+0.6
1000
VBE,BASE-EMITTER VOLTAGE(VOLTS) Collector Cutoff Region
VR,REVERSE VOLTAGE(VOLTS) Capacitance
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