FEATURES Power dissipation :0.4 (Tamb=25 Collector :0.15 Collector-bas
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TO-92 Plastic-Encapsulate Transistors Transistor(NPN)
FEATURES Power dissipation :0.4 (Tamb=25 Collector :0.15 Collector-base voltage (BR)CBO Operating storage junction temperature range :-55 +150
TO-92
1.EMITTER 2.COLLECTOR 3.BASE
ELECTRICALCHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown oltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Symbol Test conditions UNIT
(BR)CBO (BR)CEO (BR)EBO FE(1) FE(2) CE(sat) BE(sat)
Ic=1000 Ic=0.1 =100 R=10M =1mA =0.1mA =100mA,I =10mA =100mA,I =10mA =310mA
=10mA f=30MHz
CLASSIFICATION FE(1)
Rank Range 70-140 120-240 200-400 350-700
TYPICAL CHARACTERISTICS
TOTAL Power Dissipation AMBIENT Temperature COLLECTOR CURRENT COLLECTOR EMITTER VOLTAGE
COLLT/ECTOR POWER KISSIPATION Pcm(mW)
COLLECTOR CURRENT (mA)
AMBIEMT TEMPERATURE
-COLLECTOR EMITTER VOLTAGER-V CURRNT GAIN COLLECTOR CURRENT
COLLECTOR CURRENT COLLECTOR EMITTER VOLTAGE Ic-COLLECTOR CURRENT
GAIN BANDWIDTH RPDUCT EMITTER CURRENT FT-GAIN BANDWIDTH PRODUCT-MHz CURRENT
10000 5000 2000 1000
6.0V 2.0V 1.0V =10V
=6.0V
Ta=75
=0.5
0.01 0.02 0.05
-COLLECTOR EMITTER VOLTAGE-V
IE-EMITTER CURRENT-mA
Ic-COLLECTOR CURRENT-mA
(sat)BASE SATURATION VOLTAGE-V (sat)-COLLECTOR SATURTION VOLTAGE-V
COLLECTOR BADE SATURATION VOLTAGE vs.COLLECTOR CURRENT
0.05 0.02 0.01
=(sat) =(sat) Ic=10.1B
CURRENT GAIN vs.COLLECTOR CURRENT CURRENT GAIN
0.01 0.02 0.005
3.0V 2.0V 1.0V VCE=6.0V PULSED
Ic=10.1B
IE-EMITTER CURRENT-mA
Ic-COLLECTOR CURRENT-mA
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