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TO-92 Plastic-Encapsulate Transistors TransistorNPN

TO-92

TO-92 Plastic-Encapsulate Transistors Transistor(NPN)
TO-92
1.EMITTER 2.COLLECTOR 3.BASE 1 2 3
Parameter Collector-base breakdown v oltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Symbol Test conditions MIN MAX UNIT
V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CER I EBO H FE(1) H FE(2) V CE(sat) V BE(sat)
CLASSIFICATION OF H FE(1)
Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700
TYPICAL CHARACTERISTICS
TOTAL Power Dissipation vs AMBIENT Temperature COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE
COLLT / ECTOR POWER KISSIPATION Pcm(mW)
I C COLLECTOR CURRENT (mA)
AMBIEMT TEMPERATURE Ta( C)
V CE -COLLECTOR TO EMITTER VOLTAGER-V DC CURRNT GAIN vs COLLECTOR CURRENT
COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE Ic-COLLECTOR CURRENT mA
GAIN BANDWIDTH RPDUCT vs EMITTER CURRENT FT-GAIN BANDWIDTH PRODUCT-MHz h FE -DC CURRENT AIN
V CE -COLLECTOR TO EMITTER VOLTAGE-V
IE-EMITTER CURRENT-mA
Ic-COLLECTOR CURRENT-mA
V BE (sat)BASE SATURATION VOLTAGE-V V CE (sat)-COLLECTOR SATURTION VOLTAGE-V
COLLECTOR AND BADE SATURATION VOLTAGE vs.COLLECTOR CURRENT
DC CURRENT GAIN vs.COLLECTOR CURRENT h FE -DC CURRENT GAIN
PUL SED
IE-EMITTER CURRENT-mA
Ic-COLLECTOR CURRENT-mA