MB1S THRU MB7S SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE

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MB1S THRU MB7S SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE

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VOLTAGE RANGE 1000 Volts CURRENT Ampere
MB1S THRU MB7S
SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
FEATURES Surage overload rating-30 amperes peak Ideal printed circuit board Reliable cost construction utilizing molded Glass passivated device Polarity symbols molded body Mounting position:Any Weight:0.5 gram MECHANICAL DATA Epoxy:Device flammability classification 94V-0 Iisted recognized component directory,file#E94233
MB-S
0.028(0.9) 0.020(0.5) 0.106(2.74) 0.092(2.34)
.004(0.10)MAX
0.157(4.0)
0.193(4.9) 0.177(4.5)
MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS
0.106(2.7) 0.091(2.3) 0.193(4.9) 0.177(4.5)
Ratings ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive inductive load. capacitive load ,derate current 20%.
Dimensions millimeters
Absolute Maximum Ratings Ta=25 unless otherwise noted)
RATINGS Maximum Recurrent Peak Reverse Voltage Maximum Bridge Input Voltage Maximum Blocking Voltage Maximum Average Forward Output Rectified Current TA=30 glass-epoxy P.C.B.(NOTE1) aluminum substrate(NOTE2)
SYMBOL (AV)
2.756(7.0) 0.260(6.6)
0.157(4.0) 0.145(3.6)
MB1S
UNITS 1000 olts olts 1000 olts
Peak Forward Surge Current8.3ms single half sine-wave superimposed onrated load (JEDEC method) Operating Storage Temperature Range
ELECTRICAL CHARACTERISTICS Ta=25 unless otherwise noted)
CHARACTERISTICS
SYMBOL MB1S MB2S MB3S MB4S MB5S MB6S MB7S UNITS
Maximum Forward Voltage Drop Bridge Element 0.5A Maximum Reverse Current rated Blocking Voltage element
NOTE:
@TA=25 @TA=125
1.05
olts
mAmps mAmps
1.On glass-epoxy C.B.mounted 0.05X0.05 (1.3X1.3mm)pads 2.On aluminum substrate P.C.B.with area 0.8X0.8X0.25 (20X20X6.4mm)mounted 0.05X0.05 (1.27X1.27mm)solder pad. 3.Suffix. Surface Mount Mini Bridge.
0.152(3.6)
RATING CHARACTERISTIC CURVES
MB1S THRU MB7S
INSTANTANEOUS FORWARD CURRENT,(A)
TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
Pulse test diode
POWER DISSIPATION
POWER DISSIPATION pF(w)
Sine wave Tj=150
TL=150 (TYP)
TL=25 (TYP)
0.05
INSTANTANEOUS FORWARD VOLTAGE,(V)
AVERAGE RECTIFIED FORWARD CURRENT,to(A)
SURGE FORWARD CURRENT CAPABILITY PEAK FORWARD SURGE CURRENT(A)
TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A)
giass -epoxy substrate Sine wave R-icad free
8.3ms
8.3ms
cycle
non-repetitive Tj=25
aluminum substrate
NUMBER CYCLE
AMBIENT TEMPERATURE,(

MB1S THRU MB7S SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE

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