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N-CHANNEL 500V 0.15 TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh


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STB21NM50N STB21NM50N-1
N-CHANNEL 500V 0.15 TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmeshMOSFET
Table General Features
TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N
Figure Package
RDS(on) 0.19 0.19 0.19 0.19 0.19
VDSS (@Tjmax)
D2PAK
TO-220
TO-220FP
100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE
DESCRIPTION STx21NM50N realized with second generation MDmesh Technology. This revolutionary MOSFET associates vertical structure Company's strip layout yield world's lowest on-resistance gate charge. therefore suitable most demanding high efficiency converters
I2PAK
TO-247
Figure Internal Schematic Diagram
APPLICATIONS MDmeshII family very suitable increasing power density high voltage converters allowing system miniaturization higher efficiencies.
Table Order Codes
SALES TYPE STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N MARKING B21NM50N B21NM50N F21NM50N P21NM50N W21NM50N PACKAGE D2PAK I2PAK TO-220FP TO-220 TO-247 PACKAGING TAPE REEL TUBE TUBE TUBE TUBE
Rev. October 2005 1/16
STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
Table Absolute Maximum ratings
Symbol Parameter TO-220 TO-247 VDGR PTOT dv/dt(1) Viso Tstg Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --55 1.12 2500 D2PAK Value I2PAK 0.23 TO-220FP W/°C V/ns Unit
Pulse width limited safe operating area
Limited only maximum temperature allowed di/dt A/µs, =80% V(BR)DSS
Table Thermal Data
TO-220 TO-247 Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose 0.89 62.5 TO-220FP 4.21 °C/W °C/W
Table Avalanche Characteristics
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
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STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table On/Off
Symbol V(BR)DSS dv/dt(2) IDSS Parameter Drain-source Breakdown Voltage Drain Source Voltage Slope Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Min. 1mA, Vdd=400V, Id=25A, Vgs=10V Rating Rating VGS, 10V, 0.150 0.190 Value Typ. Max. V/ns Unit
IGSS VGS(th) RDS(on)
Characteristic value turn inductive load
Table Dynamic
Symbol Ciss Coss Crss Coss td(on) td(off) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Off-voltageRise Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Input Resistance Test Conditions 25V, MHz, Min. Typ. 1950 Max. Unit
400V =250 (see Figure 400V, 10V, (see Figure f=1MHz Gate Bias=0 Test Signal Level=20mV Open Drain
Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
Table Source Drain Diode
Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs 25°C (see Figure 18A, di/dt A/µs 150°C (see Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle
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STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
Figure Safe Operating Area TO-220 Figure Thermal Impedance TO-220
Figure Safe Operating Area TO-220FP
Figure Thermal Impedance TO-220FP
Figure Output Characteristics
Figure Transfer Characteristics
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STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
Figure Transconductance Figure Static Drain-source Resistance
Figure Gate Charge Gate-source Voltage
Figure Capacitance Variations
Figure Normalized Gate Threshold Voltage Temperature
Figure Normalized Resistance Temperature
5/16
STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
Figure Source-Drain Forward Characteristics Figure Normalized BVdss Temperature
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STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
Figure Unclamped Inductive Load Test Circuit Figure Unclamped Inductive Wafeform
Figure Switching Times Test Circuit Resistive Load
Figure Gate Charge Test Circuit
Figure Test Circuit Inductive Load Switching Diode Recovery Times
7/16
STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
order meet environmental requirements, offers these devices ECOPACK® packages. These packages have Lead-free second level interconnect category second level interconnect marked package inner label, compliance with JEDEC Standard JESD97. maximum ratings related soldering conditions also marked inner label. ECOPACK trademark. ECOPACK specifications available www.st.com
8/16
STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
D2PAK FOOTPRINT
TAPE REEL SHIPMENT
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE 1000
sales type
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STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
10/16
STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
TO-262 (I2PAK) MECHANICAL DATA
DIM. MIN. 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 3.50 1.27 MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
11/16
STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
TO-220 MECHANICAL DATA
DIM. MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
12/16
STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
TO-220FP MECHANICAL DATA
MIN. 0.45 0.75 1.15 1.15 4.95 28.6 15.9 30.6 10.6 16.4 1.126 .0385 0.114 0.626 0.354 0.118 MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM.
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STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM.
14/16
STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
Table Revision History
Date 07-Sep-2005 28-Sep-2005 14-Oct-2005 Revision Description Changes First Release. Symbol changed Table Modified curves
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STP21NM50N STF21NM50N STB21NM50N STB21NM50N-1 STW21NM50N
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics other names property their respective owners 2005 STMicroelectronics Rights Reserved STMicroelectronics group companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States America www.st.com
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