IGBT With Antiparallel Diode forward voltage drop High switching
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311D
IGBT With Antiparallel Diode
forward voltage drop High switching speed tail current Latch-up free Including fast free-wheel diode Former Development 3JKD Type 311D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit Ordering Code REQUEST
Package TO-218
1200V
VCGR
Gate-emitter voltage collector current
Pulsed collector current,
ICpuls
Diode forward current
Pulsed diode current,
IFpuls
Power dissipation
Ptot
Chip operating temperature Storage temperature
Tstg
Semiconductor Group
May-06-1999
311D
Maximum Ratings Parameter Chip operating temperature Storage temperature climatic category, 68-1 Thermal Resistance Thermal resistance, junction case Diode thermal resistance, chip case Symbol Values Unit
Tstg
RthJC RthJCD
Electrical Characteristics, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
VCE,
Collector-emitter saturation voltage
VCE(sat)
Zero gate voltage collector current
ICES
1200
Gate-emitter leakage current
IGES
Semiconductor Group
May-06-1999
311D
Characteristics Transconductance
Input capacitance
Ciss Coss
Output capacitance
Reverse transfer capacitance
Crss
Electrical Characteristics, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load Turn-on delay time Values typ. max. Unit
td(on)
RGon
Rise time
RGon
Turn-off delay time
td(off)
RGoff
Fall time
RGoff
Semiconductor Group
May-06-1999
311D
Free-Wheel Diode Diode forward voltage
Reverse recovery time
-600 diF/dt -400 A/µs,
Reverse recovery charge
-600 diF/dt -400 A/µs
Semiconductor Group
May-06-1999
311D
Power dissipation Ptot (TC) parameter:
Collector current (TC) parameter:
Ptot
Safe operating area (VCE) parameter: 25°C
15.0µs
Transient thermal impedance parameter:
IGBT
ZthJC
0.50 0.20
0.10 single pulse
0.05 0.02 0.01
Semiconductor Group
May-06-1999
311D
Typ. output characteristics
Typ. output characteristics
(VCE)
parameter:
(VCE)
parameter:
Typ. transfer characteristics
(VGE)
parameter:
Semiconductor Group
May-06-1999
311D
Typ. switching time
Typ. switching time
(IC) inductive load 125°C
par.:VCE=600V, ±15V, =153
(RG) inductive load 125°C par.:VCE=600V, ±15V,
tdoff
tdoff
tdon
tdon
Typ. switching losses
Typ. switching losses
(IC) inductive load 125°C
par.:VCE=600V, ±15V, =153
Eoff
(RG) inductive load 125°C
par.:VCE=600V, ±15V,
Semiconductor Group
May-06-1999
311D
Typ. gate charge (QGate) parameter: puls
Typ. capacitances
(VCE)
Ciss
Gate
Short circuit safe operating area
Reverse biased safe operating area
ICsc (VCE) 150°C parameter:
ICpuls (VCE) 150°C parameter:
ICsc/IC(90°C)
ICpuls/I
1000 1200 1600
1000 1200
1600
Semiconductor Group
May-06-1999
311D
Typ. forward characteristics
(VF)
parameter:
Transient thermal impedance parameter:
Diode
ZthJC
Tj=125°C
Tj=25°C
0.50 0.20
0.10 0.05 0.02 single pulse 0.01
Semiconductor Group
May-06-1999
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