SILICON POWER TRANSISTOR BUL1688L FEATURES: HIGH SWITCH

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SILICON POWER TRANSISTOR BUL1688L FEATURES: HIGH SWITCH

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SILICON POWER TRANSISTOR
BUL1688L
FEATURES:
HIGH SWITCHING SPEED WIDE COMPACT FLUORESCENT LAMP
APPLICATIONS: SUITABLE 110V CIRCUIT MODE:
ELECTRONIC BALLASTS FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES
MAXIMUM RATINGSTc=25°C SOT-82
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VALUE UNIT
VCBO VCEO VEBO Tstg
-65-150
SOT-82
E2-C3-
ELECTRICAL CHARACTERISTICSTc=25°C
CHARACTERISTIC Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage Base-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain SYMBOL TEST CONDITION UNIT
ICBO ICEO VCEO VEBO Vces Vbes
VCB=400V VCE=250V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=1.0A,IB=0.2A IC=2.0A,IB=0.4A IC=5.0A,IB=1.0A IC=2.0A,IB=0.4A VCE=5V,IC=10mA VCE=5V,IC=1.0A VCE=5V,IC=5A
semiconductors
2002.08
BUL1688L
SOA(DC)
0.01 0.001 Vce(v) 1000
Tj()
PcTj
Is/s
Ic(A)
Ptot
hFE-Ic
Tj=125 Vce=1.5V
hFE-Ic
Vce=5V Tj=125
Tj=25
Tj=25
0.001
0.01
0.001
0.01
Ic(A)
Vcesat-Ic
Vcesat(v)
Tj=125 hFE=5 0.01 semiconductors
Ic(A)
Vbesat-Ic
Vbesat(v)
Tj=25 Tj=25 Tj=125 hFE=5
Ic(A)
2002.08
SOT-82 MECHANICAL DATA
SYMBOL 10.5 0.49 15.4 4.15 2.54 2.15 4.65 UNITmm 10.8 0.75
semiconductors
2002.08

SILICON POWER TRANSISTOR BUL1688L FEATURES: HIGH SWITCH

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