SILICON POWER TRANSISTOR BUL6802L FEATURES: HIGH SWITCH
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SILICON POWER TRANSISTOR
BUL6802L
FEATURES:
HIGH SWITCHING SPEED WIDE COMPACT FLUORESCENT LAMP
APPLICATIONS: SUITABLE 110V CIRCUIT MODE:
ELECTRONIC BALLASTS FLUORESCENT LIGHTING
MAXIMUM RATINGSTc=25°C TO-126
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VALUE UNIT
VCBO VCEO VEBO Tstg
-65-150
ELECTRICAL CHARACTERISTICSTc=25°C
CHARACTERISTIC Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage Base-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL TEST CONDITION UNIT
ICBO ICEO VCEO VEBO Vces Vbes
VCB=500V VCE=300V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.2A,IB=0.02A IC=1.0A,IB=0.2A IC=1.5A,IB=0.5A IC=0.2A,IB=0.02A VCE=5V,IC=1mA
0.45
Current Gain
VCE=10V,IC=0.1A VCE=5V,IC=1.5A
semiconductors
2002.08
BUL6802L
SOA(DC)
Ic(A) 0.01 Vce(v) 1000
Tj()
PcTj
Is/s
Ptot
hFE-Ic
Tj=125 Vce=1.5V
hFE-Ic
Tj=125
Vce=5V
Tj=25
Tj=25
0.001
0.01
0.001
0.01
Ic(A)
Vcesat-Ic
Vcesat(v)
Tj=125 Tj=25 hFE=5 0.01 semiconductors
Ic(A)
Vbesat-Ic
Vbesat(v)
Tj=25 Tj=125
hFE=5
Ic(A)
2002.08
TO-126 MECHANICAL DATA
SYMBOL 0.65 0.45 10.5 2.29 0.88 0.60 11.1 SYMBOL 15.3 0.5* UNITmm 16.5 2.54
semiconductors
2002.08
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