SILICON POWER TRANSISTOR BUL6822BL FEATURES: HIGH SWITC
|
|
|
Top Searches for this datasheet
SILICON POWER TRANSISTOR
BUL6822BL
FEATURES:
HIGH SWITCHING SPEED WIDE COMPACT FLUORESCENT LAMP
APPLICATIONS: SUITABLE 110V CIRCUIT MODE:
ELECTRONIC BALLASTS FLUORESCENT LIGHTING
MAXIMUM RATINGSTc=25°C TO-92
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VALUE UNIT
VCBO VCEO VEBO Tstg
-65-150
TO-92 1-E2-C3-B
ELECTRICAL CHARACTERISTICSTc=25°C
CHARACTERISTIC Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage Base-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain SYMBOL TEST CONDITION UNIT
ICBO ICEO VCEO VEBO Vces Vbes
VCB=500V VCE=300V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.1A,IB=0.01A IC=0.2A,IB=0.04A IC=0.5A,IB=0.1A IC=0.1A,IB=0.01A VCE=5V,IC=1mA VCE=10V,IC=50mA VCE=5V,IC=500mA
semiconductors
2002.08
BUL6822BL
SOA(DC)
Ic(A) 0.01 Vce(v) 1000
Tj()
PcTj
Is/s
Ptot
hFE-Ic
Vce=1.5V Tj=125
hFE-Ic
Tj=125
Vce=5V
Tj=25
Tj=25
0.001
0.01
0.001
0.01
Ic(A)
Vcesat-Ic
Vcesat(v)
Vbesat-Ic
Vbesat(v)
Tj=125 Tj=25 hFE=5 0.01 0.01 semiconductors
Tj=25
Tj=125 hFE=5
Ic(A)
Ic(A)
0.01
2002.08
TO-92 MECHANICAL DATA
SYMBOL 2.54 1.27 12.7 UNITmm
semiconductors
2002.08
Other recent searches
NSPG300A - NSPG300A NSPG300A Datasheet
LFCN-1500+ - LFCN-1500+ LFCN-1500+ Datasheet
FW050R - FW050R FW050R Datasheet
FW100R - FW100R FW100R Datasheet
FW150R - FW150R FW150R Datasheet
EB155A - EB155A EB155A Datasheet
CS4297A - CS4297A CS4297A Datasheet
CS4297A - CS4297A CS4297A Datasheet
DS318PP6 - DS318PP6 DS318PP6 Datasheet
CS22270 - CS22270 CS22270 Datasheet
CCM-202B - CCM-202B CCM-202B Datasheet
74VHC00 - 74VHC00 74VHC00 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
