SILICON POWER TRANSISTOR BUL6821L FEATURES: HIGH SWITCH
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SILICON POWER TRANSISTOR
BUL6821L
FEATURES:
HIGH SWITCHING SPEED WIDE COMPACT FLUORESCENT LAMP
APPLICATIONS: SUITABLE 110V CIRCUIT MODE:
ELECTRONIC BALLASTS FLUORESCENT LIGHTING
MAXIMUM RATINGSTc=25°C TO-92
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VALUE UNIT
VCBO VCEO VEBO Tstg
-65-150
TO-92 1-E2-C3-B
ELECTRICAL CHARACTERISTICSTc=25°C
CHARACTERISTIC Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage Base-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain SYMBOL TEST CONDITION UNIT
ICBO ICEO VCEO VEBO Vces Vbes
VCB=500V VCE=300V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.1A,IB=0.01A IC=0.2A,IB=0.04A IC=0.5A,IB=0.1A IC=0.1A,IB=0.01A VCE=5V,IC=1mA VCE=10V,IC=50mA VCE=5V,IC=500mA
semiconductors
2002.08
BUL6821L
SOA(DC)
Ic(A) 0.01 Vce(v) 1000
Tj()
PcTj
Is/s
Ptot
hFE-Ic
Vce=1.5V Tj=125
hFE-Ic
Tj=125
Vce=5V
Tj=25
Tj=25
0.001
0.01
0.001
0.01
Ic(A)
Vcesat-Ic
Vcesat(v)
Vbesat-Ic
Vbesat(v)
Tj=125 Tj=25 hFE=5 0.01 0.01 semiconductors
Tj=25
Tj=125 hFE=5
Ic(A)
Ic(A)
0.01
2002.08
TO-92 MECHANICAL DATA
SYMBOL 2.54 1.27 12.7 UNITmm
semiconductors
2002.08
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