SILICON POWER TRANSISTOR BUL6822B FEATURES: HIGH VOLTAG
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SILICON POWER TRANSISTOR
BUL6822B
FEATURES:
HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED WIDE
APPLICATIONS: ELECTRONIC BALLASTS FLUORESCENT LIGHTING
COMPACT FLUORESCENT LAMP
MAXIMUM RATINGSTc=25°C TO-92
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Tstg VALUE -65-150 UNIT TO-92 1-E2-C3-B
ELECTRICAL CHARACTERISTICSTc=25°C
CHARACTERISTIC Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage Base-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain SYMBOL ICBO ICEO VCEO VEBO Vces Vbes TEST CONDITION UNIT
VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.1A,IB=10mA IC=0.4A,IB=0.1A IC=0.1A,IB=10mA VCE=10V,IC=1mA VCE=10V,IC=50mA VCC=250V, IC=5IB; IB1=IB2=60mA
Storage Time
2002.07
BUL6822B
SOA(DC)
Ic(A)
PcTj
Is/s
Ptot
0.01
Vce(V)
1000
Tj()
hFE-Ic
Tj=125 Vce=1.5V
hFE-Ic
Tj=125
Tj=25
Vce=5V
Tj=25
Tj=125
Tj=125
Tj=25
Ic(mA) 1000
Ic(mA) 1000
Vcesat-Ic
Vcesat(v) Tj=125 hFE=5 Tj=25 0.01 0.01
Ic(A)
Vbesat(v)
Vbesat-Ic
Tj=25
Tj=125
hFE=5
Ic(A)
0.01
2002.06
TO-92 MECHANICAL DATA
SYMBOL 2.54 1.27 12.7 UNITmm
2002.07
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