SILICON POWER TRANSISTOR BUL6821 FEATURES: HIGH VOLTAGE
|
|
|
Top Searches for this datasheet
SILICON POWER TRANSISTOR
BUL6821
FEATURES:
HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED WIDE
APPLICATIONS: ELECTRONIC BALLASTS FLUORESCENT LIGHTING
COMPACT FLUORESCENT LAMP
MAXIMUM RATINGSTc=25°C TO-92
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Tstg VALUE -65-150 UNIT TO-92
ELECTRICAL CHARACTERISTICSTc=25°C
CHARACTERISTIC Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage Base-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain SYMBOL ICBO ICEO VCEO VEBO Vces Vbes TEST CONDITION UNIT
VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.1A,IB=10mA IC=0.4A,IB=0.1A IC=0.1A,IB=10mA VCE=10V,IC=1mA VCE=10V,IC=50mA VCC=250V, IC=5IB; IB1=IB2=60mA
Storage Time
2002.07
BUL6821
SOA(DC)
Ic(A)
PcTj
Is/s
Ptot
0.01
Vce(V)
1000
Tj()
hFE-Ic
Tj=125 Vce=1.5V
hFE-Ic
Tj=125
Tj=25
Vce=5V
Tj=25
Tj=125
Tj=125
Tj=25
Ic(mA) 1000
Ic(mA) 1000
Vcesat-Ic
Vcesat(v) Tj=125 hFE=5 Tj=25 0.01 0.01
Ic(A)
Vbesat(v)
Vbesat-Ic
Tj=25
Tj=125
hFE=5
Ic(A)
0.01
2002.06
TO-92 MECHANICAL DATA
SYMBOL 2.54 1.27 12.7 UNITmm
2002.07
Other recent searches
XBMR53D - XBMR53D XBMR53D Datasheet
T35L6464A - T35L6464A T35L6464A Datasheet
QRS4506001 - QRS4506001 QRS4506001 Datasheet
PD60166 - PD60166 PD60166 Datasheet
IR2136 - IR2136 IR2136 Datasheet
IR21362 - IR21362 IR21362 Datasheet
IR21363 - IR21363 IR21363 Datasheet
IR21365 - IR21365 IR21365 Datasheet
IR21366 - IR21366 IR21366 Datasheet
IR21367 - IR21367 IR21367 Datasheet
IR21368 - IR21368 IR21368 Datasheet
KBU8005G - KBU8005G KBU8005G Datasheet
KBU810G - KBU810G KBU810G Datasheet
DS1345W - DS1345W DS1345W Datasheet
ART2815T - ART2815T ART2815T Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
