SILICON POWER TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH SWITCHING S
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Product specification MJE13003BR
SILICON POWER TRANSISTOR
HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED WIDE
APPLICATIONS: ELECTRONIC BALLASTS FLUORESCENT LIGHTING
COMPACT FLUORESCENT LAMP
MAXIMUM RATINGSTc=25°C TO-126
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Tstg VALUE UNIT
-65-150
ELECTRICAL CHARACTERISTICSTc=25°C
CHARACTERISTIC Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage Base-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Storage Time Fall Time SYMBOL ICBO ICEO VCEO VEBO Vces Vbes TEST CONDITION UNIT
VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.2A,IB=0.04A IC=0.5A,IB=0.1A IC=0.8A,IB=0.2A IC=0.2A,IB=0.04A VCE=5V,IC=5mA VCE=5V,IC=0.1A VCE=5V,IC=0.5A VCC=250V, IC=5IB; IB1=IB2=0.1A
2002.07
MJE13003BR(H)
Ic(A)
SOA(DC)
PcTj
Is/s
Ptot
0.01
Vce(V)
1000
Tj()
hFE-Ic
Vce=1.5V
hFE-Ic
Tj=125
Tj=125
Vce=5V
Tj=25
Tj=25
0.001
0.01
Ic(A)
0.001
Ic(A)
0.01
Vcesat-Ic
Vcesat(v) Tj=125 Tj=25 hFE=5 0.01
Ic(A)
Vbesat-Ic
Vbesat(v)
Tj=25 hFE=5
Ic(A)
Tj=125
2002.06
Product specification
TO-126 MECHANICAL DATA
SYMBOL 0.65 0.45 10.5 2.29 0.88 0.60 11.1 SYMBOL 15.3 0.5* UNITmm 16.5 2.54
2002.07
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