SILICON POWER TRANSISTOR BUL1688 FEATURES: HIGH VOLTAGE
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SILICON POWER TRANSISTOR
BUL1688
FEATURES:
HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED WIDE
APPLICATIONS: ELECTRONIC BALLASTS FLUORESCENT LIGHTING
COMPACT FLUORESCENT LAMP SWITCH MODE POWER SUPPLIES
MAXIMUM RATINGSTc=25°C SOT-82
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Tstg VALUE -65-150 UNIT SOT-82
ELECTRICAL CHARACTERISTICSTc=25°C
CHARACTERISTIC Collector Cutoff Current Collector Cutoff Current Collector-Emitter Sustaining Voltage Base-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Storage Time Fall Time SYMBOL ICBO ICEO VCEO VEBO Vces Vbes TEST CONDITION UNIT
VCB=700V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=1.0A,IB=0.2A IC=2.0A,IB=0.4A IC=3.0A,IB=0.8A IC=2.0A,IB=0.4A VCE=5V,IC=10mA VCE=5V,IC=1.0A VCE=5V,IC=2.5A VCC=250V, IC=5IB; IB1=IB2=0.5A
2002.07
BUL1688
SOA(DC)
Ic(A) 0.01 Vce(v) 1000
Tj()
PcTj
Is/s
Ptot
hFE-Ic
Vce=1.5V
hFE-Ic
Tj=125
Tj=125
Vce=5V
Tj=25
Tj=25
0.001
0.01
Ic(A)
0.001
0.01
Ic(A)
Vcesat-Ic
Vcesat(v) Tj=125 Tj=25 hFE=5 0.01
Ic(A)
Vbesat-Ic
Vbesat(v)
Tj=25
Tj=125
hFE=5
Ic(A)
2002.06
SOT-82 MECHANICAL DATA
SYMBOL 10.5 0.49 15.4 4.15 2.54 2.15 4.65 UNITmm 10.8 0.75
2002.07
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