deep both sides +0,1 max. -0,3 Aug. 1996 Peri
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Marketing Information 2601
deep both sides
+0,1
max.
-0,3
Aug. 1996
Periodische Dauergrenzstrom Grenzlastintegral Kritische Stromsteilheit Kritische Spannungssteilheit
Elektrische Eigenschaften Werte
2601
repetitive peak forward off-state reverse voltages non-repetitive peak forward off-state voltage non-repetitive peak reverse voltage on-state current average on-state current surge current t-value critical rate rise on-state current critical rate rise off-state voltage
Electrical properties Maximum rated values
-40°C.t -40°C.t +25°C.t
VDRM VRRM VDSM VDRM VRSM VRRM ITRMSM
4800 5000 5200 4800 5000 5200 4900 5100 5300 5500 2600 3500
A/µs V/µs
85°C 65°C 25°C, 25°C, 67%, iGM= G/dt A/µs
ITAVM ITSM
57000 (diT/dt)cr (dv/dt)cr 2000
Charakteristische Werte
Schleusenspannung Ersatzwiderstand Nicht Steuerstrom Nicht Steuerspannung Haltestrom Einraststrom Freiwerdezeit
Characteristic values
on-state voltage threshold voltage slope resistance gate trigger current gate trigger voltage gate non-trigger current gate non-trigger voltage holding current latching current forward off-state reverse currents gate controlled delay time circuit commutated turn-off time 10,5 °C,v A/µs, max, VDRM VRRM tvj=25°C, G/dt A/µs siehe Techn.Erl./see Techn. Inf. max. max. typ. VT(TO) max. 3,16 1,13 0,18 max. max. max. max. max. max. max. 2000
Innerer beidseitige Betriebstemperatur Lagertemperatur
Thermische Eigenschaften
thermal resistance, junction case two-sided cooling thermal resistance, case heatsink max. junction temperature operating temperature storage temperature
Thermal properties
=180° beidseitig/two-sided
RthJC RthCK tstg
max. 0,0059 max. 0,0055 max. 0,0015 -40.+120 -40.+150
°C/W °C/W °C/W
Si-Elemente Druckkontakt Gewicht Kriechstrecke Feuchteklasse Schwingfestigkeit anliegend
Mechanische Eigenschaften
Si-pellet with pressure contact clamping force weight creepage distance humidity classification vibration resistance outline, attached
Mechanical properties
40040 63.91 typ. 3000
(Sinushalbwelle Hz)/Current limit case (sinusoidal half-wave
2601
[kA]
2601
120°
180°
PTAV
2601
1000
2000
3000 ITAV
4000
Bild Fig. Limiting on-state characteristic f(vT),
Bild Fig. On-state power loss PTAV f(ITAV) Parameter: Current conduction angle
[°C]
PTAV
180° 120°
2601
180°
4000
2601
1000
2000
3000 ITAVM
1000
2000
3000
4000
5000 ITAV
6000
Bild Fig. Max. allowable case temperature f(ITAVM) Beidseitige Two-sided cooling Parameter: Current conduction angle Berechnungsgrundlage PTAV (Schaltverluste gesondert Calculation base PTAV (switching losses should considered separately) [°C]
2601
Bild Fig. On-state power loss PTAV f(ITAV) Parameter: Current conduction angle
120°
1000
2000
3000 ITAVM
4000
2601
[mA]
Bild Fig. Max. allowable case temperature f(ITAVM) Beidseitige Two-sided cooling Parameter: Current conduction angle Berechnungsgrundlage PTAV (Schaltverluste gesondert Calculation base PTAV (switching losses should considered separately)
Bild Fig. Steuercharakteristik Gate characteristic with trigging areas f(iG), Parameter: Steuerimpulsdauer trigger puls duration [ms] Spitzensteuerverlustleistung Max. rated peak gate power dissipation
2601
ITM= 2000
[µs]
[µAs]
10-1
2601
2601
[mA]
-di/dt [A/µs]
Bild Fig. Gate controlled delay time f(iGM) diG/dt iGM/1µs
Bild Fig. Recovered charge f(di/dt) max, VRRM, VRRM Parameter: On-state current i
0,007 0,006 Z(th)JC [°C/W] 0,004 0,003 0,002 0,001
2601
0,007 0,006 Z(th)JC [°C/W] 0,004 0,003
120° 180°
0,002 0,001 10-1
2601
120° 180°
10-1
Bild Fig. Transienter innerer Transient thermal impedance ZthJC f(t) Parameter: current conduction angle
Bild Fig. Transienter innerer Transient thermal impedance ZthJC f(t) Parameter: current conduction angle
Analytische Elemente transienten ZthJC Zweig Analytical elements transient thermal impedance ZthJC Pos. [°C/W] 0,00029 0,0055 0,00055 0,0195 0,09 0,00042 0,25 0,00216 0,00208
Analytische Funktion Analytical function:
nmax
ZthJC
(1-e
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