35PD500-S Sheet 35PD500-S, InGaAs photodiode with 500µm-diam
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Large Area InGaAs p-i-n Photodiode
35PD500-S
Sheet
35PD500-S, InGaAs photodiode with 500µm-diameter photosensitive region mounted metallized ceramic substrate, versatile device with applications high sensitivity instrumentation, laser back-facet monitoring, low-bit-rate telecomm datacomm transmission. Planar semiconductor design dielectric passivation provide superior noise performance. Reliability assured 100% purge burn-in (200°C, hours, 20V). Chips also attached wire bonded customer-supplied other specified submounts.
Features: Planar Structure Dielectric Passivation 100% Purge Burn-in High Responsivity
DEVICE CHARACTERISTICS Parameters Operating Voltage Dark Current Capacitance Responsivity Responsivity Rise/Fall ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 15Volts 50mA -40°C +85°C -40°C +85°C 250°C
Sheet
Test Conditions 1300nm 1500nm
Minimum
Typical
Maximum
Units Volts
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Mechanical Specifications Ceramic Packages
Submount
0.025 0.050
Sheet
0.010 0.050
0.020 places)
Chip
0.160
Bond Wire 0.060
0.080 ANODE (bias CATHODE (bias
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet
Mechanical Specifications Ceramic Packages
Submount
Sheet
0.110 0.035 CATHODE (Bias Plated 0.010 0.035 0.065
ANODE (Bias Plated
0.060
Bond Wire
CATHODE (Bias Plated
0.010 Plated Backside
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet
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