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35PD300LDC-ST, InGaAs photodiode with 300µm-diameter photosensitive re


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35PD300LDC-ST, -SMA, -FC,
35PD300LDC-ST, InGaAs photodiode with 300µm-diameter photosensitive region packaged TO-46 header actively aligned AT&T active device mount, low-dark-current version 35PD300. This device Telcom Devices' most versatile optoelectronic components designed applications high sensitivity instrumentation, moderate-bit-rate fiberoptic communications. Planar semiconductor design dielectric passivation provide superior performance. Reliability assured hermetic sealing 100% purge burn-in (200°C, hours, 20V). Devices with enhanced responsivity available.
Features: Planar Structure Dielectric Passivation 100% Purge Burn-in High Responsivity
DEVICE CHARACTERISTICS Parameters Operating Voltage Dark Current Capacitance Responsivity Responsivity Rise/Fall Test Conditions 1300nm (-3dB) Minimum Typical Maximum 0.51 Units Volts
ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Volts 25mA -40°C +85°C -40°C +85°C 250°C
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com

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