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35PD300-FC, InGaAs photodiode with 300µm-diameter photosensitive regio
Top Searches for this datasheet35PD300-FC 35PD300-FC, InGaAs photodiode with 300µm-diameter photosensitive region packaged TO-46 header actively aligned active device mount. This device Telcom Devices' most versatile optoelectronic components designed applications high sensitivity instrumentation, moderate-bit-rate fiberoptic communications. Planar semiconductor design dielectric passivation provide superior performance. Reliability assured hermetic sealing 100% purge burn-in (200°C, hours, 20V). Devices with enhanced responsivity 850nm available. Features: Planar Structure Dielectric Passivation 100% Purge Burn-in High Responsivity DEVICE CHARACTERISTICS Parameters Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Test Conditions 1300nm (-3dB) Minimum Typical Maximum Units Volts ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Volts 25mA -40°C +85°C -40°C +85°C 250°C Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com Other recent searchesSAM47 - SAM47 SAM47 Datasheet LTC6802-2 - LTC6802-2 LTC6802-2 Datasheet HD74ALVC2G74 - HD74ALVC2G74 HD74ALVC2G74 Datasheet HD66132T - HD66132T HD66132T Datasheet BSO130P03S - BSO130P03S BSO130P03S Datasheet 1SV331 - 1SV331 1SV331 Datasheet
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