13PD75-ST, InGaAs photodiode with 75µm-diameter photosensitive region

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13PD75-ST, InGaAs photodiode with 75µm-diameter photosensitive region

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13PD75-ST, -SMA, -FC,
13PD75-ST, InGaAs photodiode with 75µm-diameter photosensitive region packaged TO-46 header aligned AT&T active device mount, intended high speed noise applications. Planar semiconductor design dielectric passivation provide superior noise performance. Reliability assured hermetic sealing 100% purge burn-in (200°C, hours, 20V). receptacle suitable bulkhead Board mounting.
Features: Planar Structure Dielectric Passivation 100% Purge Burn-in High Responsivity
DEVICE CHARACTERISTICS Parameters Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Test Conditions 1300nm (-3dB) Minimum Typical Maximum Units Volts
0.65
ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Volts -40°C +85°C -40°C +85°C 250°C
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com

13PD75-ST, InGaAs photodiode with 75µm-diameter photosensitive region

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