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Sheet 13PD75LDC-S InGaAs photodiode with 75µm-diameter photosensi


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13PD75LDC-S
Sheet
13PD75LDC-S InGaAs photodiode with 75µm-diameter photosensitive region mounted metallized ceramic substrate, low-dark-current version 13PD75 intended high speed noise applications. diameter photosensitive region sufficiently small enable operation dark current capacitance while offering efficient coupling multi-mode fiber. Planar semiconductor design dielectric passivation provide superior noise performance. Reliability assured hermetic sealing 100% purge burn-in (200°C, hours, 15V).
Features: Planar Structure Dielectric Passivation 100% Purge Burn-in High Responsivity
DEVICE CHARACTERISTICS Parameters Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response (-3dB) 1300nm Test Conditions Minimum Typical Maximum 0.11 Units Volts
ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Volts -40°C +85°C -40°C +85°C 250°C
Sheet
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Mechanical Specifications Ceramic Packages
Submount
0.025 0.050
Sheet
0.010 0.050
0.020 places)
Chip
0.160
Bond Wire 0.060
0.080 ANODE (bias CATHODE (bias
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet
Mechanical Specifications Ceramic Packages
Submount
Sheet
0.110 0.035 CATHODE (Bias Plated 0.010 0.035 0.065
ANODE (Bias Plated
0.060
Bond Wire
CATHODE (Bias Plated
0.010 Plated Backside
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet

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