Sheet 13PD55-S, InGaAs photodiode with 55µm-diameter photosensiti

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Sheet 13PD55-S, InGaAs photodiode with 55µm-diameter photosensiti

Datasheet Thumbnail

Top Searches for this datasheet

13PD55-S
Sheet
13PD55-S, InGaAs photodiode with 55µm-diameter photosensitive region mounted metallized ceramic substrate, intended high speed noise applications telecommunications data communications systems. Planar semiconductor design dielectric passivation provide very noise performance. Reliability assured 100% purge burn-in (200°C, hours, 20V). Chips also attached wire bonded customer-supplied other specified submounts.
Features: Planar Structure Dielectric Passivation 100% Purge Burn-in High Responsivity
DEVICE CHARACTERISTICS Parameters Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response (-3dB) 1300nm 0.05 Test Conditions Minimum Typical Maximum Units Volts
ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Volts 10mA -40°C +85°C -40°C +85°C 250°C
Sheet
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Mechanical Specifications Ceramic Packages
Submount
0.025 0.050
Sheet
0.010 0.050
0.020 places)
Chip
0.160
Bond Wire 0.060
0.080 ANODE (bias CATHODE (bias
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet
Mechanical Specifications Ceramic Packages
Submount
Sheet
0.110 0.035 CATHODE (Bias Plated 0.010 0.035 0.065
ANODE (Bias Plated
0.060
Bond Wire
CATHODE (Bias Plated
0.010 Plated Backside
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet

Sheet 13PD55-S, InGaAs photodiode with 55µm-diameter photosensiti

Top Searches for this datasheet

Other recent searches