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Sheet 13PD150-TO, InGaAs photodiode with 150µm-diameter photosens


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13PD150-TO
Sheet
13PD150-TO, InGaAs photodiode with 150µm-diameter photosensitive region packaged TO-46 header, intended moderate-to-high speed applications. Efficient coupling multi-mode fiber active device receptacles enabled relatively large active area. Planar semiconductor design dielectric passivation provide superior noise performance. Reliability assured hermetic sealing 100% purge burn-in (200°C, hours, 20V). Headers available with either lensed flat window cap. Chips also attached wire bonded customer-supplied other specified packages.
Features: Planar Structure Dielectric Passivation 100% Purge Burn-in High Responsivity
DEVICE CHARACTERISTICS Parameters Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Test Conditions 1300nm Minimum Typical 1.25 Maximum Units Volts
ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Volts -40°C +85°C -40°C +85°C 250°C
Sheet
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Mechanical Specifications TO-46 Header Packages
Standard TO-46 Lens
0.210 0.184 LENS 0.030 CHIP
Sheet
0.144
1.00 0.017
CATHODE (BIAS ANODE (BIAS 0.050
22.5°
CASE
0.040 0.040
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet
Mechanical Specifications TO-46 Header Packages
TO-46 Ultra Flat Window
0.100 [2.54] 0.185 [4.70] 0.125 [3.17]
Sheet
0.212 [5.38]
0.011 [0.28] 0.015 [0.38] TYP. 0.019
0.011 [0.28]
-ANOT SCALE CHIP
[25.4]
0.015 [0.38] TYP. 0.019 MAX. WINDOW SURFACE CHIP SURFACE
CATHODE (BIAS ANODE(BIAS
CASE/GND
0.05 [1.27]
0.040 [1.02] 0.049 [1.25] REF. 0.017 [0.43] 0.05 [1.27]
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet

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