Sheet 13PD100-S, InGaAs photodiode with 100µm-diameter photosensi

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Sheet 13PD100-S, InGaAs photodiode with 100µm-diameter photosensi

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13PD100-S
Sheet
13PD100-S, InGaAs photodiode with 100µm-diameter photosensitive region mounted metallized ceramic substrate, largest standard device enabling 1GHz frequency cutoff. Planar semiconductor design dielectric passivation provide very noise performance. Reliability assured 100% purge burn-in (200°C, hours, 20V). Chips also attached wire bonded customer-supplied other specified packages.
Features: Planar Structure Dielectric Passivation 100% Purge Burn-in High Responsivity
DEVICE CHARACTERISTICS Parameters Operating Voltage Dark Current Capacitance Responsivity Responsivity Rise/Fall Frequency Response (-3dB) 1300nm 1500nm Test Conditions Minimum Typical Maximum Units Volts
ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Volts 500µA -40°C +85°C -40°C +85°C 250°C
Sheet
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Mechanical Specifications Ceramic Packages
Submount
0.025 0.050
Sheet
0.010 0.050
0.020 places)
Chip
0.160
Bond Wire 0.060
0.080 ANODE (bias CATHODE (bias
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet
Mechanical Specifications Ceramic Packages
Submount
Sheet
0.110 0.035 CATHODE (Bias Plated 0.010 0.035 0.065
ANODE (Bias Plated
0.060
Bond Wire
CATHODE (Bias Plated
0.010 Plated Backside
Custom packaging also available.
Flynn Road, Camarillo, 93012 Phone: (805) 445-4500 Fax: (805) 445-4502 Email: Website: www.telcomdevices.com
Sheet

Sheet 13PD100-S, InGaAs photodiode with 100µm-diameter photosensi

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