NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SEMICONDUCTORS TIC116A TIC116A, TIC116B TIC116B, TIC116C TIC116C, TIC116D TIC116D, TIC116E TIC116E, TIC116M TIC116M, TIC116N, TIC116S TIC116S P-N-P-N , Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS , half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state , applies for a maximum averaging time of 20 ms. Page 1 of 3 V V A A A A W W °C °C °C SEMICONDUCTORS TIC116A TIC116A, TIC116B TIC116B, TIC116C TIC116C, TIC116D TIC116D, TIC116E TIC116E, TIC116M TIC116M, TIC116N, TIC116S TIC116S THERMAL ... | Original |
3 pages, |
TIC116S TIC116N TIC116D datasheet TIC116D TIC116C TIC116A TIC116M TIC116B TIC116E TIC116A abstract |
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| Abstract: Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage K 1 Max IGT of , 600 700 TIC116N V 800 TIC116D TIC116D Repetitive peak reverse voltage UNIT 400 400 TIC116M TIC116M TIC116S TIC116S VRRM 700 V 800 TIC116N Continuous on-state current at (or below) 70°C , operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be , maximum averaging time of 20 ms. NOITAMROFNI TCUDORP APRIL 1971 - REVISED SEPTEMBER 2002 ... | Original |
5 pages, |
TIC116S TIC116N TIC116M TIC116D TIC116 TIC116 abstract |
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| Abstract: Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage K 1 Max IGT of , 600 700 TIC116N V 800 TIC116D TIC116D Repetitive peak reverse voltage UNIT 400 400 TIC116M TIC116M TIC116S TIC116S VRRM 700 V 800 TIC116N Continuous on-state current at (or below) 70°C , operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be , maximum averaging time of 20 ms. NOITAMROFNI TCUDORP APRIL 1971 - REVISED SEPTEMBER 2002 ... | Original |
4 pages, |
TIC116S TIC116D TIC116 Series TIC116 datasheet of tic116n "Silicon Controlled Rectifiers" TIC116N TIC116M TIC116 abstract |
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| Abstract: 400 V to 800 V Off-State Voltage G Max IGT of 20 mA APRIL 1971 - REVISED JUNE 2000 TO-220 , 600 700 TIC116N V 800 TIC116D TIC116D Repetitive peak reverse voltage UNIT 400 400 TIC116M TIC116M TIC116S TIC116S VRRM 600 700 V 800 TIC116N IT(RMS) 8 A IT(AV) 5 A , (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after , averaging time of 20 ms. PRODUCT INFORMATION Information is current as of publication date. ... | Original |
6 pages, |
TIC116S TIC116N TIC116D TIC116- TIC116 datasheet of tic116n TIC116M silicon controlled rectifier TIC116 abstract |
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| Abstract: 400 V to 800 V Off-State Voltage q Max IGT of 20 mA APRIL 1971 - REVISED MARCH 1997 TO-220 , VDRM 600 700 TIC116N V 800 TIC116D TIC116D Repetitive peak reverse voltage UNIT 400 400 TIC116M TIC116M TIC116S TIC116S VRRM 600 700 V 800 TIC116N IT(RMS) 8 A IT(AV) 5 , 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse , equilibrium. 5. This value applies for a maximum averaging time of 20 ms. PRODUCT INFORMATION ... | Original |
8 pages, |
TIC116S TIC116D Thyristor to220 TIC116M TIC116 TIC116N thyristor tic116 TIC116 abstract |
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| Abstract: 400 V to 800 V Off-State Voltage q Max IGT of 20 mA APRIL 1971 - REVISED MARCH 1997 TO-220 , VDRM 600 700 TIC116N V 800 TIC116D TIC116D Repetitive peak reverse voltage UNIT 400 400 TIC116M TIC116M TIC116S TIC116S VRRM 600 700 V 800 TIC116N IT(RMS) 8 A IT(AV) 5 , 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse , equilibrium. 5. This value applies for a maximum averaging time of 20 ms. PRODUCT INFORMATION ... | Original |
8 pages, |
TIC116S TIC116N TIC116D TIC116 Series TIC116 TIC116M Thyristor to220 thyristor tic116 TIC116 abstract |
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| Abstract: TIC116D TIC116D TIC116M TIC116M TIC116S TIC116S TIC116N TIC126D TIC126D TIC126M TIC126M TIC126S TIC126S TIC126N TIC126N 400 600 400 600 400 600 , TIC263D TIC263D TIC263M TIC263M TIC263S TIC263S TIC263N TIC263N TIC116D TIC116D TIC116M TIC116M TIC116N TIC126D TIC126D TIC126M TIC126M TIC126N TIC126N TIC106D TIC106D , TIC106M TIC106M TIC106N TIC106N TIC106S TIC106S TIC108D TIC108D TIC108M TIC108M TIC108N TIC108N TIC116D TIC116D TIC116M TIC116M TIC116N TIC116S TIC116S TIC126D TIC126D TIC126M TIC126M , TIC116M TIC116M TIC116N TIC116S TIC116S TIC126D TIC126D TIC126M TIC126M TIC126N TIC126N TIC126S TIC126S TIC201D TIC201D TIC201M TIC201M TIC201S TIC201S TIC206D TIC206D TIC206M TIC206M , TICP206D TICP206D TICP206M TICP206M TIC116D TIC116D TIC126D TIC126D TIC116D TIC116D TIC126D TIC126D TIC116D TIC116D TIC126D TIC126D TIC116M TIC116M TIC126M TIC126M TIC116N ... | Original |
8 pages, |
TYN208 transistor equivalent of BU406 btb24-600b bdx54c equivalent BDX33D equivalent EQUIVALENT OF BU426A SCR TIC106D TIC126D TIC206M tip137 equivalent tip122 motor control TIC225M equivalent replacement TYN412 datasheet abstract |
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| Abstract: TIC116D TIC116D TIC116M TIC116M TIC116S TIC116S TIC116N TIC126D TIC126D TIC126M TIC126M TIC126S TIC126S TIC126N TIC126N 400 600 400 600 400 600 , TIC263D TIC263D TIC263M TIC263M TIC263S TIC263S TIC263N TIC263N TIC116D TIC116D TIC116M TIC116M TIC116N TIC126D TIC126D TIC126M TIC126M TIC126N TIC126N TIC106D TIC106D , TIC106M TIC106M TIC106N TIC106N TIC106S TIC106S TIC108D TIC108D TIC108M TIC108M TIC108N TIC108N TIC116D TIC116D TIC116M TIC116M TIC116N TIC116S TIC116S TIC126D TIC126D TIC126M TIC126M , TIC116M TIC116M TIC116N TIC116S TIC116S TIC126D TIC126D TIC126M TIC126M TIC126N TIC126N TIC126S TIC126S TIC201D TIC201D TIC201M TIC201M TIC201S TIC201S TIC206D TIC206D TIC206M TIC206M , TICP206D TICP206D TICP206M TICP206M TIC116D TIC116D TIC126D TIC126D TIC116D TIC116D TIC126D TIC126D TIC116D TIC116D TIC126D TIC126D TIC116M TIC116M TIC126M TIC126M TIC116N ... | Original |
8 pages, |
TIC106D BTB26-400 TIP106M TIP35C SCR TIC106D TIC206 TYN208 TIP35C replacement TIC106D equivalent TICP106D cross reference TICP107M TIP41 TRANSISTOR REPLACEMENT malaysia tic226D TIC206M DATASHEET datasheet abstract |
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| Abstract: encapsulation of TO-220 products assembled by PSI Technologies Inc, Manila, Philippines. The change is: From , : Rationalization of mold compounds in the assemblyt/test site. Product Labeling: No change to the product labeling. Identification of the Changed Product: Bourns maintains traceability back to source wafer lots for all products. Implementation Date: Shipments of finished goods including the new mold compound , Notification PCN Tracking Number BLBF39 BLBF39 - Mold Compound Change February, 2006 Page 2 of 5 Qualification ... | Original |
5 pages, |
bd242 TRANSISTOR equivalent bd656 TIC106D-S R3672 TIC226D Philippines bd659 BU446 r3674 transistor bd659 TIP43 R3439-S transistor bf65 BD654 bf65 BLBF39 MP150SG BLBF39 abstract |
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| Abstract: encapsulation of TO-220 products assembled by PSI Technologies Inc, Manila, Philippines. The change is: From , : Rationalization of mold compounds in the assemblyt/test site. Product Labeling: No change to the product labeling. Identification of the Changed Product: Bourns maintains traceability back to source wafer lots for all products. Implementation Date: Shipments of finished goods including the new mold compound , Notification PCN Tracking Number BLBF39 BLBF39 - Mold Compound Change February, 2006 Page 2 of 5 Qualification ... | Original |
5 pages, |
Y1133-S R3439-S BDX55-S r3674 TIC226D Philippines TIC226D TIC206M BF65 BD654 transistor bf64 BDX55 BF65-S TIP43 R3439 R3672 BLBF39 MP150SG BLBF39 abstract |
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