NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: below. The combination of I.R. emitting diode, photodetector and detector electronics is critical in , low junction capacitance and consequently capable of fast response times. The active chip is packaged , sensitive to infra-red radiation only, and has a high rejection of wavelengths below 700 nm. The BPW41ID BPW41ID is therefore eminently suitable for use in I.R. remote control links. ELECTRICAL CHARACTERISTICS IN PHOTOCONDUCTIVE MODE (at 25°C). Parameter Symbol Min. Typ. Max. Unit Conditions Reverse dark current IR - 2 30 ... | OCR Scan |
2 pages, |
photodiode response illumination Infra-red bpx25 BPW41 IR DATA phototransistor application circuit bpw41 MRD370 BPW41D BPW41 remote control of IR PHOTOTRANSISTOR BPY62 application MRD300 Phototransistor bpx25 BPW41D abstract |
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| Abstract: to a high state when IR light is detected by the phototransistor. The output is created by , just described can be applied to all two pin IR phototransistor components that Fairchild , low levels of light from triggering the phototransistor and help provide a more digital output. The , performance of the component doesn't change with a greater bias except when the phototransistor is used as a , www.fairchildsemi.com Application Note AN-3005 AN-3005 Design Fundamentals for Phototransistor Circuits ... | Original |
2 pages, |
2 pin phototransistor 3 pin phototransistor Phototransistor of IR PHOTOTRANSISTOR phototransistor application circuit AN-3005 IR phototransistor phototransistor 3 pin phototransistor with amplifier Phototransistor with base emitter AN-3005 abstract |
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| Abstract: phototransistor mounted on opposite sides of a 0 125" (3.18 mm) wide slot. The OPB828A OPB828A has an IR transmissive housing. The OPB828B OPB828B has an IR transmissive housing with an 0.010" (0.25 mm) aperture located in front of , in front of the phototransistor. The OPB828D OPB828D has an opaque housing with a molded 0.010" (0.25 mm) aperture located in front of the phototransistor. Phototransistor switching takes place whenever an opaque , chlorinated hydrocarbons and ketones. Descriptions Phototransistor Type Housing Aperture OPB828A OPB828A IR ... | OCR Scan |
2 pages, |
phototransistor npn OPB829 OPB828D OPB828C OPB828B OPB828A OPB828 OPB827 OPB828 abstract |
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| Abstract: Inexpensive plastic housing Description The OPB827 OPB827 series consists of an infrared emitting diode and an NPN silicon phototransistor mounted on opposite sides of a 0.125" wide slot. The OPB827A OPB827A has an IR transmissive housing. The OPB827B OPB827B has an IR transmissive housing with an 0.010" aperture over the phototransistor. The OPB827C OPB827C has an opaque housing with a molded 0.060" aperture located in front of the , chlorinated hydrocarbons and ketones. Descriptions Phototransistor Type Housing Aperture OPB827A OPB827A IR ... | OCR Scan |
2 pages, |
phototransistor OPB829 OPB828 OPB827D OPB827C OPB827B OPB827A OPB827 OPB827A abstract |
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| Abstract: Phototransistor Emitter-Collector Voltage 5 V IR Diode Peak Power Current (Pulse Wide = 1 S, 300 pps , LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * NON-CONTACT SWITCHING. , noted. Part No. : LTH-301-33W1 LTH-301-33W1 DATA SHEET BNS-OD-C131/A4 BNS-OD-C131/A4 Page : 1 of 5 LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only ABSOLUTE MAXIMUM RATINGS AT TA=25 PARAMETER MAXIMUM RATING UNIT IR Diode Continuous Forward Current 50 mA IR Diode Reverse Voltage 5 V ... | Original |
5 pages, |
LTH-301-33W1 Lite-On Technology lite-on DIODE A4 Liteon TRANSISTOR a4 datasheet abstract |
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| Abstract: , consists of an infrared LED emitter that is optically coupled to a phototransistor detector through a , normal or non-blocked operation, the LED shines IR light on the phototransistor. This received light , phototransistor is conducting very little current, and the 68K load resistor pulls the input of Fairchild , becomes exposed and IR light falls upon the phototransistor. This light generates a photocurrent that flows from the collector to emitter of the phototransistor. This increase in current develops a voltage ... | Original |
2 pages, |
QVE00033 AN3010 datasheet of IR PHOTOTRANSISTOR emitter phototransistor NC7WZ17 phototransistor phototransistor datasheet AN-3010 phototransistor application circuit phototransistor with amplifier IR PHOTOTRANSISTOR AN-3010 abstract |
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| Abstract: , consists of an infrared LED emitter that is optically coupled to a phototransistor detector through a , normal or non-blocked operation, the LED shines IR light on the phototransistor. This received light , phototransistor is conducting very little current, and the 68K load resistor pulls the input of Fairchild , becomes exposed and IR light falls upon the phototransistor. This light generates a photocurrent that flows from the collector to emitter of the phototransistor. This increase in current develops a voltage ... | Original |
2 pages, |
QVE00033 Phototransistor NC7WZ17 AN-3010 IR phototransistor phototransistor application circuit phototransistor with amplifier AN-3010 abstract |
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| Abstract: appearance may vary. Features Phototransistor output Focused for maximum response q Ambient light and dust protective filter q q Description The HOA1405 HOA1405 series consists of an infrared emitting diode and an NPN silicon phototransistor encased side-by-side on converging optical axes in a black thermoplastic housing. The phototransistor responds to radiation from the IRED only when a reflective object passes within its field of view. The HOA1405 HOA1405 series employs an IR transmissive filter to minimize the ... | Original |
2 pages, |
VISIBLE LIGHT PHOTOTRANSISTOR SEP8505 SDP8405 optical reflective sensor npn phototransistor package HOA1405-001 HOA1405 IR switch HOA1405-001 abstract |
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| Abstract: IR 1.6 V IF = 20mA 100 A VR=5V OUTPUT PHOTOTRANSISTOR Collector-Emitter V(BR , LITE-ON TECHNOLOGY CORPORATION Property of LITON Only FEATURES * SNAP MOUNTING. * MECHANICAL , Page : 1 of 4 LITE-ON TECHNOLOGY CORPORATION Property of LITON Only ABSOLUTE MAXIMUM RATINGS AT TA=25 PARAMETER MAXIMUM RATING UNIT IR Diode Continuous Forward Current 50 mA IR Diode Reverse Voltage 5 V Transistor Collector Currant 20 mA Transistor Power ... | Original |
4 pages, |
LTH-306-03W24 of IR PHOTOTRANSISTOR IR phototransistor A4 transistor IR DIODE A4 diode datasheet abstract |
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| Abstract: ) Phototransistor Collector-Emitter Voltage 30 V Phototransistor Emitter-Collector Voltage 5 V IR , LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * NON-CONTACT SWITCHING. , BNS-OD-C131/A4 BNS-OD-C131/A4 Page : 1 of 4 LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only ABSOLUTE MAXIMUM RATINGS AT TA=25 PARAMETER MAXIMUM RATING UNIT IR Diode Continuous Forward Current 50 mA IR Diode Reverse Voltage 5 V Transistor Collector Current 20 mA ... | Original |
4 pages, |
phototransistor LTH-301-23 DIODE A4 A4 transistor A4 diode datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Status SFH 331 SMT-MULTILED ® with 630 nm visible Emitter and Si-Phototransistor 60 K 11.97 SFH 7221 SMT-MULTILED ® with 950 nm IR-Emitter and Si-Phototransistor 51 K . Wide angle of +/- 60 deg. Matches SFH 320/FA 320/FA 320/FA 320/FA SFH 426: 880 nm IR-Emitter in SMT -Emitter with a viewing angle of +/- 14 deg . Matches Photodiode SFH 2500/FA 2500/FA 2500/FA 2500/FA and Phototransistor SFH 3500/FA 3500/FA 3500/FA 3500/FA a viewing angle of +/- 15 deg . Matches Photodiode SFH 2500/FA 2500/FA 2500/FA 2500/FA and Phototransistor SFH 3500/FA 3500/FA 3500/FA 3500/FA www.datasheetarchive.com/files/infineon/products/37/3731.htm |
Infineon | 26/11/1998 | 5.16 Kb | HTM | 3731.htm |
| Silicon Phototransistors - Plastic Package -Silizium-Fototransistor Silicon NPN Phototransistor Especially suitable for applications from 420 nm to 1130 nm (SFH 300) and of 880 nm (SFH 300 FA) High linearity 5 mm LED plastic package Available in -Silizium-Fototransistor Silicon NPN Phototransistor Especially suitable for applications from 450 nm to 1100 nm (SFH 303) and of 880 nm (SFH 303 FA) High linearity 5 mm LED plastic package Also available on www.datasheetarchive.com/files/siemens/products/37/37431.htm |
Siemens | 28/02/1998 | 6.26 Kb | HTM | 37431.htm |
| Status IRL 80A 950 nm IR-Emitter in plastic package with Lateral emission and a viewing angle of +/- 30 deg . Matches phototransistor LPT 80A 128 K 10.95 IRL 81A 880 nm IR-Emitter in plastic package with Lateral emission and a viewing angle of +/- 30 deg . Matches phototransistor LPT 80A 160 K 10.95 SFH 4110 New 950 nm IR-Emitter in miniature plastic package with Lateral emission and a viewing angle of +/- 9 deg . Matches phototransistor SFH 3100 www.datasheetarchive.com/files/infineon/products/37/374a2.htm |
Infineon | 26/11/1998 | 4.75 Kb | HTM | 374a2.htm |
| Suitable only for reflow IR soldering. In case of dip soldering, please contact us first. 288 K SMT - Phototransistors s Phototransistor in SMT TOPLED ® -Package Especially suitable for applications from 380 nm to 1150 nm (SFH 320) and of 880 nm (SFH 320 FA) High linearity P-LCC-2 package Available in groups Silicon NPN Phototransistor in SMT SIDELED ® -Package Especially suitable for applications from www.datasheetarchive.com/files/siemens/products/37/37451.htm |
Siemens | 28/02/1998 | 4.84 Kb | HTM | 37451.htm |
| Suitable only for reflow IR soldering. In case of dip soldering, please contact us first. 288 K SMT - Phototransistors Type Features Size Status SFH 320 SFH 320 FA Silicon NPN Phototransistor in ) and of 880 nm (SFH 320 FA) High linearity P-LCC-2 package Available in groups Suitable Silicon NPN Phototransistor in SMT SIDELED ® -Package Especially suitable for applications from www.datasheetarchive.com/files/infineon/products/37/37451.htm |
Infineon | 26/11/1998 | 6.18 Kb | HTM | 37451.htm |
| Optocoupler, 2xIR-LED and Phototransistor , Silicon NPN Phototransistor Q68000-A Q68000-A Q68000-A Q68000-A Quad Channel Optocoupler, GaAs IRED, Silicon NPN Phototransistor , Silicon NPN Phototransistor , Silicon NPN Phototransistor Q68000-A Q68000-A Q68000-A Q68000-A www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1696.htm |
Infineon | 28/10/2000 | 33.9 Kb | HTM | pro~1696.htm |
| Silicon Phototransistors - Plastic Package -Silizium-Fototransistor Silicon NPN Phototransistor Especially suitable for applications from 420 nm to 1130 nm (SFH 300) and of 880 nm (SFH 300 FA) High linearity 5 mm LED plastic package Available in -Silizium-Fototransistor Silicon NPN Phototransistor Especially suitable for applications from 450 nm to 1100 nm (SFH 303) and of 880 nm (SFH 303 FA) High linearity 5 mm LED plastic package Also available on www.datasheetarchive.com/files/infineon/products/37/37431.htm |
Infineon | 26/11/1998 | 7.07 Kb | HTM | 37431.htm |
| SMT Phototransistors SMT - Phototransistors . THT Phototransistors Silicon Photovoltaic Cells, Silicon Photodiodes and Phototransistors General IR and Photodetector Information [Part I General IR and Photodetector Information [Part II www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/prod~730.htm |
Infineon | 26/10/2000 | 24.83 Kb | HTM | prod~730.htm |
| Infineon Technologies AG - Products - PIN Phototransistor PIN Phototransistor in visible and near IR range/Light barriers Phototransistor Detector Q62702-P1033 Q62702-P1033 Q62702-P1033 Q62702-P1033 Phototransistor Detector Q62702-P0264 Q62702-P0264 Q62702-P0264 Q62702-P0264 www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1738.htm |
Infineon | 26/10/2000 | 22.8 Kb | HTM | pro~1738.htm |
| to 5 mm IR-GaAs-emitter Silicon NPN phototransistor detector Daylight filter against undesired mm to 5 mm IR-GaAs-emitter Silicon NPN phototransistor detector Daylight filter against undesired mm to 5 mm IR-GaAs-emitter Silicon NPN phototransistor detector Daylight filter against undesired mm to 5 mm IR-GaAs-emitter Silicon NPN phototransistor detector Daylight filter against undesired © 1999 - 2000 Infineon Technologies AG - Usage of the Web Site is subject to the Usage Terms . www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~2075.htm |
Infineon | 26/10/2000 | 20.38 Kb | HTM | pro~2075.htm |