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Abstract: 2.5 200 350 2N3906 PNP 40 100 30M 10 SjjMjfj .4 50 â MM 300 2.5 200 350 2N4123 NPN 30 50 150 2 UHB , , 5mA 2N3905 2N 3904 40 1 100-300 10mA 1 0.3 50mA, 5tA 2N3906 2N3905 40 50-1 50 10mA 1 0.4 50mA, 5mA 2N3903 2N3906 40 100-300 10mA 1 0.4 50mA, 5mA 2N3904 2N4400 40 f 50-150 150mA 1 0.4 150mA , mmslSSISm. 3 0.5 2N3905 PNP 40 70 260 mÃÃÃÃÃ^è 1 ^ 3 0.5 2N3906 PNP 40 300 WsSÌÃmM 1 3 0.5 , 2N3905 2N3906 The General Electric 2N3905 and 2N3906 are silicon PNP planar epitaxial transistors -
OCR Scan
2N4124 2N4125 2N4126 2N4401 2N4402 2N3906 JEDEC 2N3906 hie 2N3905 Equivalent 2n3906 npn 2n3906 equivalent 2N4403
Abstract: 2N3905, 2N3906 PNP Switching Transistors Si-Epitaxial PlanarTransistors PNP Version , , 2N3906 Collector-Emitter-voltage B open - VCE0 40 V Collector-Base-voltage E open - , Gehäuse auf Umgebungstemperatur gehalten werden 32 General Purpose Transistors 2N3905, 2N3906 , Kollektor-Basis-Stromverhältnis - VCE = 1 V, - IC = 0.1 mA 2N3905 2N3906 hFE hFE 30 60 ­ ­ ­ ­ - VCE = 1 V, - IC = 1 mA 2N3905 2N3906 hFE hFE 40 80 ­ ­ ­ ­ - VCE = 1 V, - IC = 10 mA Diotec
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2N3906 die 2N3906 plastic 2n3906 datasheet 10D3 2n3904 950 c2n3905 UL94V-0 150/C
Abstract: Resistance, Junction to Ambient R9JA 200 °c.w 2N3905 2N3906 CASE 29-04, STYLE 1 TO-92 (TO-226AA) GENERAL , 2N3906 hFE 30 60 _ I , He = 1 o mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 â'" »C = 10 mAdc, Vce = 1-OVdcl 2N3905 2N3906 50 100 150 300 HC = 50 mAdc. VCE = 1.0 Vdc) 2N3905 2N3906 30 60 â'" ('C = 100 mAdc, Vce = 10 Vdc' 2N3905 2N3906 15 30 â'" Collector-Emitter Saturation Voltage "c - 10 mAdc, Ib = 1 0 , CHARACTERISTICS "-"'em-Gain â'" Bandwidth Product l!C - 10 mAdc. VCe = 20 Vdc. f = 100 MHz) 2N3905 2N3906 -
OCR Scan
2n3906 equivalent transistor 2N3906 MOTOROLA transistor 2N3905 2N3905 MOTOROLA tr 2n3906 2N3906 DS J-150
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon 2N3905 2N3906 , all-Signal Transistors, FETs and Diodes Device Data 2-9 2N3905 2N3906 ELEC TR IC A L CHARACTERISTICS , OC = 0.1 mAdc, V c e = 1-0 Vdc) hFE 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2 , ) fT 2N3905 2N3906 200 250 4.5 MHz C 0bo Cibo hje 2N3905 2N3906 hre 2N3905 2N3906 hfe 2N3905 2N3906 h0e 2N3905 2N3906 NF 2N3905 2N3906 - PF - 10.0 pF kO 0.5 2.0 8.0 12 X 10~4 -
OCR Scan
TR 3906 PNP SM 2904S
Abstract: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed , . 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A EBC C , 2N3906BU 2N3906 TO-92 Bulk 10000 2N3906TA 2N3906 TO-92 Ammo 2000 2N3906TAR 2N3906 TO-92 Ammo 2000 2N3906TF 2N3906 TO-92 Tape and Reel 2000 2N3906TFR 2N3906 TO-92 Tape and Reel 2000 MMBT3906 2A SOT-23 Tape and Reel 3000 PZT3906 Fairchild Semiconductor
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Abstract: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed , . 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT , 2N3906BU 2N3906 TO-92 BULK 10000 2N3906TA 2N3906 TO-92 AMMO 2000 2N3906TAR 2N3906 TO-92 AMMO 2000 2N3906TF 2N3906 TO-92 TAPE REEL 2000 2N3906TFR 2N3906 TO-92 TAPE REEL 2000 MMBT3906 2A SOT-23 TAPE REEL 3000 PZT3906 3906 Fairchild Semiconductor
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Abstract: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , Code: 724) Dated : 07/12/2002 ST 2N3905 / 2N3906 Characteristics at Tamb=25 OC Symbol Min , 2N3906 fT 250 - - MHz CCBO - - 4.5 pF CEBO - - 10 PF DC , - VCE=1V,- IC=100mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector Semtech Electronics
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ST 2n3904 PNP switching transistor 2N3906 mhz st2n3906
Abstract: 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , distance of 2 mm from case G S P FORM A IS AVAILABLE mW C C 2N3905 / 2N3906 Characteristics at , - - MHz ST 2N3906 fT 250 - - MHz CCBO - - 4.5 pF CEBO - , - VCE=1V,- IC=50mA at- VCE=1V,- IC=100mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Bytes
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Abstract: Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , 2N3905 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 2N3905 2N3906 30 60 - - (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 50 100 150 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 30 60 - - (IC = 100 mAdc, VCE = 1.0 Vdc) 2N3905 Motorola
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2N3906 APPLICATION 1N916 2N3905/D 226AA
Abstract: Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , 2N3905 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 2N3905 2N3906 30 60 - - (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 50 100 150 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 30 60 - - (IC = 100 mAdc, VCE = 1.0 Vdc Motorola
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2N3906 OR EQUIVALENT
Abstract: 2N3906 / MMBT3906 / PZT3906 - PNP General Purpose Amplifier October 2011 2N3906 / MMBT3906 , and switching applications at collector currents of 10A to 100 mA. 2N3906 MMBT3906 C C , Max. 2N3906 625 5.0 83.3 200 357 125 *MMBT3906 350 2.8 *PZT3906 1,000 8.0 Units mW mW/°C °C/W °C , 2N3906 / MMBT3906 / PZT3906 Rev. B0 1 www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 - PNP , Number 2N3906BU 2N3906TA 2N3906TAR 2N3906TF 2N3906TFR MMBT3906 PZT3906 Marking 2N3906 2N3906 2N3906 Fairchild Semiconductor
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2n3906 2a SOT-23 EBC 2n3906 sot23 2N3906 SOT 23 2N3906 EBC 2A 3906
Abstract: 2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C PZT3906 C E C B E C TO-92 E , Ambient 2N3906 625 5.0 83.3 200 Max *MMBT3906 350 2.8 357 *PZT3906 1,000 8.0 125 Units mW mW/°C , Corporation 2N3906/MMBT3906/PZT3906, Rev A 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier , =179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued , 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics Fairchild Semiconductor
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ML4824 AN-42043 model of 2n3906 2N3906 TO-92 2N3906D AN4129 ml4423 AN-3008 AN-4129 FAN7601 AN-42034 AN-42037
Abstract: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed , . 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A EBC C , 2N3906BU 2N3906 TO-92 3L Bulk 10000 2N3906TA 2N3906 TO-92 3L Ammo 2000 2N3906TAR 2N3906 TO-92 3L Ammo 2000 2N3906TF 2N3906 TO-92 3L Tape and Reel 2000 2N3906TFR 2N3906 TO-92 3L Tape and Reel 2000 MMBT3906 2A SOT-23 3L Tape and Reel Fairchild Semiconductor
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Abstract: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , , Stock Code: 724) R Dated : 07/12/2002 ST 2N3905 / 2N3906 Characteristics at Tamb=25 OC Symbol , 2N3906 fT 250 - - MHz CCBO - - 4.5 pF CEBO - - 10 PF DC , - VCE=1V,- IC=100mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector Semtech Electronics
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data sheet transistor 2n3906 transistor 2N3906 datasheet transistor ST 2N3906
Abstract: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , ) ® Dated : 06/12/2005 ST 2N3905 / 2N3906 Characteristics at Tamb = 25 OC Parameter Symbol Min , 20 V, -IC = 10 mA, f = 100 MHz ST 2N3905 fT 200 - MHz ST 2N3906 fT 250 - , , - IC = 100 mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector Semtech Electronics
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transistor ST 2N3904 pin configuration NPN transistor 2n3906
Abstract: Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , 2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C E C B TO-92 B SOT-23 E Mark , =179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier , Max 2N3906 625 5.0 83.3 RJC RJA Thermal Resistance, Junction to Ambient PD 125 , 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 66 25 2N3906 / MMBT3906 / PZT3906 PNP Motorola
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motorola MMBT3906 sot-23 MMPQ3906 728p
Abstract: Temperature Tj 150 °C Storage Temperature Tstg -55-150 °C 1 Refer to 2N3906 for graphs 1. Emitter 2. Base , :2N3905 Vce=-1V, lc= â'"0.1mA 30 2N3906 60 2N3905 Vce=-1V, lc = â'" 1 m A 40 2N3906 80 2N3905 Vce=-1V, lc= â'" 10mA 50 150 2N3906 100 300 2N3905 Vce=-1V, lc= â'"50mA 30 2N3906 60 2N3905 Vce=-1V, lc= 100mA 15 2N3906 30 â'¢Collector-Emitter Saturation Voltage Ve e , :2N3905 f= 100MHz 200 MHz 2N3906 250 MHz Turn On Time ton Vcc=-3V, Vbe = -0.5V 70 ns Turn Off -
OCR Scan
2n3906 PNP transistor DC current gain transistor T43 S03 pnp 3906 pnp transistor 3906 transistor 2N3906 2N3905/3906 100KH 100MH DD2S024
Abstract: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features â'¢ This device is designed , . 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings* Symbol , . Thermal Characteristics Symbol PD Ta = 25°C unless otherwise noted Max. Parameter 2N3906 , collector lead min. 6 cm2. © 2011 Fairchild Semiconductor Corporation 2N3906 / MMBT3906 / PZT3906 Rev. B0 www.fairchildsemi.com 1 2N3906 / MMBT3906 / PZT3906 â'" PNP General Purpose Amplifier Fairchild Semiconductor
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Abstract: 2N3906 ® SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N3906 TO-92 / Bulk 2N3906-AP 2N3906 TO-92 s s s / Ammopack , Temperature February 2003 -65 to 150 o C 150 o C 1/5 2N3906 THERMAL DATA R , ns 72 ns 2N3906 TO-92 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN , - du o Pr e let o bs O 3/5 2N3906 TO-92 AMMOPACK SHIPMENT (Suffix"-AP STMicroelectronics
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2N3906-AP 2n3906 specification 2N3906 TO92
Abstract: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , : 09/03/2007 ST 2N3905 / 2N3906 Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE , V -VCEsat -VCEsat - 0.25 0.4 V V -VBEsat -VBEsat 2N3905 2N3906 hFE hFE hFE , Max. -ICBO 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 Min , : 09/03/2007 ST 2N3905 / 2N3906 DC Current Gain 2 VCE=1V TJ=125 C 1 hFE (Normalized Semtech Electronics
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2N3906 NPN Transistor npn 2n3906 2N3906 PNP transistor
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