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TTL-LOGIC-DATABOOK Texas Instruments TTL-LOGIC-DATABOOK visit Texas Instruments
SN74FB2031RCR Texas Instruments 9-Bit TTL/BTL Address/Data Transceiver 52-QFP 0 to 70 visit Texas Instruments
SN74FB2031RCRG3 Texas Instruments 9-Bit TTL/BTL Address/Data Transceiver 52-QFP 0 to 70 visit Texas Instruments
SN74FB2031RC Texas Instruments 9-Bit TTL/BTL Address/Data Transceiver 52-QFP 0 to 70 visit Texas Instruments
SN74FB2031RCG3 Texas Instruments 9-Bit TTL/BTL Address/Data Transceiver 52-QFP 0 to 70 visit Texas Instruments
SNJ54FB2031WD Texas Instruments 9-Bit TTL/BTL Address/Data Transceivers 48-CFP -55 to 125 visit Texas Instruments
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TPD2E009DRTR Texas Instruments 2-Channel ESD Protection Array for High-Speed Data Interfaces 3-SOT-9X3 -40 to 85 visit Texas Instruments Buy
TPD2E009DBZR Texas Instruments 2-Channel ESD Protection Array for High-Speed Data Interfaces 3-SOT-23 -40 to 85 visit Texas Instruments Buy

data of transistor 547

Catalog Datasheet MFG & Type PDF Document Tags

4n33 and 4n35

Abstract: diagram DARLINGTON 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40 , mA @'F mA â ceo /uA Max @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min
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4n27 opto isolator

Abstract: 4N2S 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40 , mA @'F mA â ceo /uA Max @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min
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transistor 45 f 122

Abstract: 4n33 and 4n35 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40 , mA @'F mA â ceo /uA Max @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min
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547 MOSFET

Abstract: AN-547-1 gate of the P-Channel MOSFET is at low voltage level, the transistor is turned on to allow current to , level, the transistor is turned off and the MAX II device is in powered-down state. Because of the 1 , automatically reads the data from the counter and writes the data into the UFM. Upon completion of the task , reads back the data before the device powers down again. The controller then reloads the registers of , significant bit (MSB) signal is used to trigger the process of saving the counter data into the UFM and
Altera
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104N35

Abstract: 4N27W 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40 , mA @'F mA â ceo /uA Max @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min
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IDG 600

Abstract: STMicroelectronics Krypton : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , - TER2 These pins control the external Q5 transistor, in which the main part of the line current , interface with most of public networks in the world. The return loss is externally adjustable to real or complex impedance. In case of a wrong connection in a digital phone line, ST952 detects the over current , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring
STMicroelectronics
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TQFP32 ST75951 IDG 600 STMicroelectronics Krypton Krypton daa Krypton isolation applications transistor 547 clid

IDG 600

Abstract: STMicroelectronics Krypton : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , external Q5 transistor, in which the main part of the line current goes through to meet the line DC, V = , interface with most of public networks in the world. The return loss is externally adjustable to real or complex impedance. In case of a wrong connection in a digital phone line, ST952 detects the over current , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring
STMicroelectronics
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BC 547 PIN DIAGRAM VTAC 4

BC 547 PIN DIAGRAM

Abstract: IDG 600 82. TER1 - TER2 These pins control the external Q5 transistor, in which the main part of the , activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hook state, ST952 DC voltage, 4.1V at a 20mA line current, allows to interface with most of public networks in the world. The
STMicroelectronics
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ST952TQFP pin diagram of BC 547 TRANSISTOR C 557 B bc 547 transistor gyrator impedance modem

ic 4n35

Abstract: 4n33 and 4n35 100 10 10 4N37 Trans 300 â'" 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40 , mA @'F mA â ceo /uA Max @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min
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4N27W ic 4n35 4n33 and 4n35 4N28 4N31 4N35

1GHz Oscillator

Abstract: RCA 444 25 2.5 1-GHz Oscillator 400 25 4.0 322 File No. 547 40909 PERFORMANCE DATA FREQUENCY (f)-GHI , '"Schematic diagram of basic oscii/ator circuit. 323 40909 File No. 547 UNIVERSAL BREADBOARD OSCILLATOR CIRCUIT , File No. 547 DQQB//0 RF Power Transistors Solid State Division 40909 2-W, 2-GHz Emitter-Ballasted Silicon N-P-N Overlay Transistor For Microwave Fundamental-Frequency Oscillators Features: â , TO-201AA PACKAGE RCA-40909* is an epitaxial silicon n-p-n transistor with overlay
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TA7943 1GHz Oscillator RCA 444 RCA microwave oscillator rca transistor colpitts oscillator construction H-1629

BC546 "cross reference"

Abstract: transistor BC 458 BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications · High Voltage: BC546 , . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Junction Temperature Storage Temperature : BC546/547 : BC548/549/550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC , 420 ~ 800 Rev. A1, June 2001 BC546/547/548/549/550 Typical Characteristics 100 100
Fairchild Semiconductor
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BC546 "cross reference" transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference BC547ATA BC546/547/548/549/550 BC556 BC560 BC547/550 BC548/549 BC546/547

transistor bc546

Abstract: bc546 fairchild NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER · HIGH VOLTAGE , /547 : BC548/549/550 Collector Current (DC) Collector Dissipation Junction Temperature Storage , Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 , Rev. B ©1999 Fairchild Semiconductor Corporation BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild
Fairchild Semiconductor
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transistor bc546 bc546 fairchild data of transistor 547 transistor C 548 B Amplifier with transistor BC548 Amplifier with transistor BC549 BC546/547/548 15000MH

transistor BC 458

Abstract: BC 458 transistor BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications · High Voltage: BC546 , . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Junction Temperature Storage Temperature : BC546/547 : BC548/549/550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC , 420 ~ 800 Rev. A2, August 2002 BC546/547/548/549/550 Typical Characteristics 100 100
Fairchild Semiconductor
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BC546BTA BC 458 transistor transistor BC 548 Data TRANSISTOR B 546b of transistor BC548 BC 546A 100MH BC546TA BC546TAR BC546TF BC546TFR BC546A

APPLICATION OF BC548 transistor

Abstract: Amplifier with transistor BC548 BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications · High Voltage: BC546 , . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Junction Temperature Storage Temperature : BC546/547 : BC548/549/550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC , 420 ~ 800 Rev. A2, August 2002 BC546/547/548/549/550 Typical Characteristics 100 100
Fairchild Semiconductor
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BC548 BC548BTFR BC548CTA APPLICATION OF BC548 transistor information of BC548 for bc548 npn transistor transistor bc 547 NPN Transistor BC548B BC548TF BC548TFR BC548A BC548ABU BC548ATA

bc550

Abstract: bc550 noise figure BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications · High Voltage: BC546 , . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Junction Temperature Storage Temperature : BC546/547 : BC548/549/550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC , 420 ~ 800 Rev. A2, August 2002 BC546/547/548/549/550 Typical Characteristics 100 100
Fairchild Semiconductor
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bc550 noise figure BC548 npn transistor NPN 548 transistor bc 548 npn bc550 transistor BC550BTAR BC550BU BC550CBU BC550CTA BC550ABU BC550ATA

H13-0547-5

Abstract: H19P0546 hÃARmS HI-546, H1-547, HI-548, HI-549 Data Sheet June 1999 File Number 3150.2 Single 16 and , -546, HI-547, HI-548 and HI-549 are analog multiplexers with active overvoltage protection and guaranteed , or disturbing the signal path of other channels. Active protection circuitry assures that signal , circuiting should multiplexer supply loss occur. Each input presents 1k£2 of resistance under this condition. These features make the HI-546, HI-547, HI-548 and HI-549 ideal for use in systems where the analog
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HI-547 AN520 AN521 H13-0547-5 H19P0546 harris semiconductor package N20.35 H1-547 HI-506/507/508/509 IS09000

bc549

Abstract: Transistor NPN BC 549B BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications · High Voltage: BC546 , . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Junction Temperature Storage Temperature : BC546/547 : BC548/549/550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC , 420 ~ 800 Rev. A2, August 2002 BC546/547/548/549/550 Typical Characteristics 100 100
Fairchild Semiconductor
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BC549 NPN transistor transistor c 548 c Transistor Bc547 npn bc548 fairchild TO92-3 Package Dimensions BC549CTFR BC549TAR BC549TF BC549TFR BC549ABU BC549ATA

BC547

Abstract: transistor bc547 specifications BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications · High Voltage: BC546 , . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , Junction Temperature Storage Temperature : BC546/547 : BC548/549/550 VEBO IC PC TJ TSTG Electrical , Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Test Condition VCB=30V, IE=0 VCE=5V, IC , 420 ~ 800 Rev. A2, August 2002 BC546/547/548/549/550 Typical Characteristics 100 100
Fairchild Semiconductor
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BC547 BC547C transistor bc547 specifications transistor bc547 applications bc547 marking transistor information of BC547 Use of BC547 transistor BC547TF BC547TFR BC547A BC547ABU BC547ATAR

Amplifier with transistor BC549

Abstract: bc556 transistor BC546/547/548/549/550 BC546/547/548/549/550 Switching and Amplifier · High Voltage: BC546 , . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , TSTG Storage Temperature -65 ~ 150 °C : BC546/547 : BC548/549/550 Electrical , : BC546/547/548 : BC549/550 : BC549 : BC550 Units nA 2 1.2 1.4 1.4 MHz 6 pF 10 4 , BC546/547/548/549/550 Typical Characteristics 100 IB = 400 A VCE = 5V IC[mA], COLLECTOR
Fairchild Semiconductor
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bc556 transistor Transistor B C 458 bc549 noise figure npn transistor of bc548

bc546 fairchild

Abstract: of transistor BC548 BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications · High Voltage: BC546 , . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , TSTG Storage Temperature -65 ~ 150 °C : BC546/547 : BC548/549/550 Electrical , Cob : BC546/547/548 : BC549/550 : BC549 : BC550 Units nA mV mV MHz 6 pF 10 4 , BC546/547/548/549/550 Typical Characteristics 100 IB = 400µA VCE = 5V IC[mA], COLLECTOR
Fairchild Semiconductor
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transistor BC549 hfe BC549 input Transistor BC546/547/548/549/550 BC547 FAIRCHILD NPN transistor bc548 CBC546
Abstract: Sem iconductor C orporation BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR 4 8 , BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC546, VCeo= 65V . LOW NOISE: BC549, BC550 · C om plem ent to BC556 . BC560 NPN EPITAXIAL SILICON TRANSISTOR T O -92 , /549 C ollector-E m ltter Voltage : BC546 : BC547/550 : BC548/549/550 Em itter-Base Voltage : BC546/547 , /547/548 : BC549/550 : BC549 : BC550 NF Sym bol IcBO h FE Test C onditions Vcb=30V, I e=0 V ce= 5V -
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15000M

transistor bc549

Abstract: bc556 transistor BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications · High Voltage: BC546 , . Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise , TSTG Storage Temperature -65 ~ 150 °C : BC546/547 : BC548/549/550 Electrical , : BC546/547/548 : BC549/550 : BC549 : BC550 Units nA 2 1.2 1.4 1.4 MHz 6 pF 10 4 , BC546/547/548/549/550 Typical Characteristics 100 IB = 400µA VCE = 5V IC[mA], COLLECTOR
Fairchild Semiconductor
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transistor bc549 transistor C 547 transistor bc547 transistor 548

marking code 38 SMD Transistor

Abstract: smd transistor 547 Product specification P-channel enhancement mode MOS transistor MECHANICAL DATA Plastic surface , transistor DEFINITIONS Data sheet status Objective specification Product specification Limiting values , 547 22135 Pack, SMD, SOT363 Full production SOT363 Full production 2 of 2 BSH206 /T3 9340 , Philips Semiconductors Product specification P-channel enhancement mode MOS transistor , mount package BSH206 SYMBOL s QUICK REFERENCE DATA VDS = -12 V ID = -0.75 A RDS(ON) 0.5 (VGS
Philips Semiconductors
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marking code 38 SMD Transistor smd transistor 547 transistor smd code marking nc TRANSISTOR SMD CODE PACKAGE SOT363 marking code PF SMD Transistor TRANSISTOR SMD MARKING CODE UA

TRANSISTOR nf 842

Abstract: D 843 Transistor NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 , frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config ured for either dual transistor or cascode operation. The high fr, low , 0.05 P IN O U T 1. C ollector T ransistor 1 2. Em itter Transistor 1 3. C ollector T ransistor 2 4. Em itter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a
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TRANSISTOR nf 842 D 843 Transistor UPA801T UPA801T-T1

TRANSISTOR S16

Abstract: ic 546 HI-546, HI-547, HI-548, HI-549 TM Data Sheet June 1999 Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection The HI-546, HI-547, HI-548 and HI , N-CHANNEL DEVICE OF THE SWITCH N A3 OR A3 N ENABLE DELETE A3 OR A3 INPUT FOR HI-547, HI , of other channels. Active protection circuitry assures that signal fidelity is maintained even , multiplexer supply loss occur. Each input presents 1k of resistance under this condition. These features make
Intersil
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TRANSISTOR S16 ic 546 70VP-P ISO9000
Abstract: presents 1k£2 of resistance under this condition. These features make the HI-546, HI-547, HI-548 and HI , ® HI-546, HI-547, HI-548, HI-549 H R I A RS S E M I C O N D U C T O R Sin g le 16 and , the signal path of other channels. Active protection circuitry assures that signal fidelity is , -546 is a single 16-Channel, the HI-547 is an 8-Channel differential, the HI-548 is a single 8-Channel and Applications Data Ac uisition the HI-549 is a 4-Channel differential device. If input -
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I-548

LB 1639

Abstract: UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS (Units in mm , epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage , applications. 0.9 ± 0.1 0.7 +0.10 0.15 - 0.05 PIN OUT 0 ~ 0.1 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1
California Eastern Laboratories
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LB 1639 BF 830 transistor UPA801T-T1-A S21E 651 lem transistor BF 507

H11-0549-5

Abstract: H11-0548-5 TRANSISTOR COUNT: HI-546: 485 HI-547: 485 PROCESS: CMOS-DI SUBSTRATE POTENTIAL f: -V SUpply t The , m £11 H a r r i s SEMICONDUCTOR December 1993 HI-546, HI-547 HIS48, HIS49 Single 16 and 8, Differential 8 and 4 Channel CMOS Analog MUXs with Active Overvoltage Protection Description The HI-546, HI-547 , disturbing the signal path of other channels. Active protection circuitry assures that signal fidelity is , multiplexer supply loss occur. Each input presents 1K il of resistance under this condition. These features
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H11-0549-5 H11-0548-5 HI546 HI547
Abstract: occur. Each input presents 1KQ of resistance under this condition. These features make the Hl546, HI-547 , DENSITY: 1.4 x 10sA/cm2 TRANSISTOR COUNT: HI-546: 485 HI-547: 485 PROCESS: CMOS-DI SUBSTRATE , fSJ H a r r is O U HI-546, HI-547 HI-548, HI-549 SEMICONDUCTOR Single 16 and 8 , Description â'¢ Analog Overvoltage Protection. 70VP.P The HI-546, HI-547, HI-548 and HI , disturbing the signal path of other channels. Active protection circuitry assures that signal fidelity is -
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AN520

Abstract: AN521 HI-546, HI-547, HI-548, HI-549 Data Sheet Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection The HI-546, HI-547, HI-548 and HI-549 are analog , input presents 1k of resistance under this condition. These features make the HI-546, HI-547, HI , exceed either power supply without damaging the device or disturbing the signal path of other channels , . The HI-546 is a single 16-Channel, the HI-547 is an 8-Channel differential, the HI-548 is a single 8
Intersil
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547 TRANSISTOR

LB 1639

Abstract: transistor Bf 444 SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR · · · · FEATURES , encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make , 0.1 0.7 0.15 - 0.05 PIN OUT 0 ~ 0.1 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with
California Eastern Laboratories
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transistor Bf 444 transistor BF 258 transistor BF 236 transistor 4341

TRANSISTOR 547

Abstract: HI1-546/883 input presents 1 kil of resistance under this condition. These features make the HI-546/883 and HI-547 , ± 0.7kA WORST CASE CURRENT DENSITY: 1.4 x 1 ,  January 1989 HI-546/883 H1-547/883 Single 16/Differential 8 Channel CMOS Analog Multiplexers , -883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. â'¢ No Channel Interaction During , .).1-0/« â'¢ Power Dissipation (Max.).45mW Applications â'¢ Data
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TRANSISTOR 547 HI1-546/883 HI-1-546 HI1-547 H14-546 Hl-547 H1-547/883 HI1-546/88S H14-546/883 HI-547/883

LB 1639

Abstract: transistor Bf 444 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS (Units in mm , epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage , applications. 0.9 ± 0.1 0.7 +0.10 0.15 - 0.05 PIN OUT 0 ~ 0.1 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1
California Eastern Laboratories
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ua 722 fc amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN

HI-546

Abstract: 547 8 pin input presents 1kO of resistance under this condition. These features make the HI-546 and HI-547 ideal , the HI-546/883 or H I-547/883 data sheets. Each device is available in a 28 pin Plastic or Ceramic DIP , Description The H I-546 and H I-547 are analog multiplexers with Active Overvoltage Protection and guaranteed , or disturbing the signal path of other channels. Active protection circuitry assures that signal , a 16 channel device and the H I-547 is a 8 channel differential version. If input overvoltage
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HI3-0546-5 547 8 pin 7bl5 H623 hi4p547 I-547 HI-546/547 HI4P0546-5 HI4P0547-5 I3-0547-5

HI4-0546/883

Abstract: HI-546 input presents 1K of resistance under this condition. These features make the HI546, HI-547, HI-548 and , DENSITY: 1.4 x 105A/cm2 TRANSISTOR COUNT: HI-546: 485 HI-547: 485 PROCESS: CMOS-DI SUBSTRATE , input presents 1K of resistance under this condition. These features make the HI546, HI-547, HI-548 and , DENSITY: 1.4 x 105A/cm2 TRANSISTOR COUNT: HI-546: 485 HI-547: 485 PROCESS: CMOS-DI SUBSTRATE , HI-546, HI-547 HI-548, HI-549 S E M I C O N D U C T O R Single 16 and 8, Differential 8 and
Harris Semiconductor
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HI4-0546/883 HI1-0546/883 hi4-0546 HI4-0549/883 HI4-0549 HI9P0546-5

transistor NEC D 822 P

Abstract: transistor number D 2498 DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed , transistor has been applied small mini mold package. FEATURES â'¢ Low Noise NF = 1.2 dB TYP. @ f = 1 GHz , -T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Collector)face to perforation side of the tape. 2SC4226-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pini (Emitter), Pin2 (Base) face to perforation side of the
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2SC4226-T1 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P SC-70 P10368EJ3V0DS00 TC-2402

i507

Abstract: hi3-547 presents 1 k f l of resistance under this condition. These features make the H I-5 4 6 and H I-547 ideal , H I-547 are analog m ultiplexers with Active Overvoltage Protection and guaranteed Ro n matching , ). 500ns â'¢ Standby Power (Typical).7.5mW Applications â'¢ Data , the â'˜788 3â' suffix. For details, request the H I-5 4 6 /8 8 3 or H I-5 4 7 /8 8 3 data sheets , ™¦VSUPPLY C NC C 2 HI1-547 (CERAMIC DIP) HI3-547 (PLASTIC DIP) TOP VIEW ♦VSUPPLY C 1 OUT B C 2
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i507 hi3-547 I-506 I-507

HI-547

Abstract: HI1-0546/883 input presents 1k of resistance under this condition. These features make the HI-546, HI-547, HI , HI-546, HI-547, HI-548, HI-549 S E M I C O N D U C T O R Single 16 and 8, Differential 8 , Description · Analog Overvoltage Protection . . . . . 70VP-P The HI-546, HI-547, HI-548 and HI-549 are , device or disturbing the signal path of other channels. Active protection · Guaranteed rON Matching , -Channel, Applications the HI-547 is an 8-Channel differential, the HI-548 is a single 8-Channel and the HI-549 is a 4
Harris Semiconductor
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HI-54X-2 HI1-0549-2

H14-0546

Abstract: HI9P0547-9 to n-channel device of the switch MULTIPLEX SWITCH decode 11 -919 HI-546, H1-547, HI-548, HI , wvys HI-546, H1-547, S Semiconductor y y HI-548, HI-549 Single 16 and 8, Differential 8-Channel and , Analog Overvoltage Protection 70VP P The Hl"546' Hl"547* Hl"548 and Hl"549 are analo9 multiplexers with , disturbing the signal path of other Channels. Active protection uaran ee ton a c ng circuitry assures that , ). 500ns multiplexer supply loss occur. Each input presents 1 kQ of resistance under this condition
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H14-0546 HI9P0547-9 546F

PXF-10

Abstract: 24VAC to 24VDC converter WIRING DIAGRAM Signal converter for the conversion of an analogue process signal to a pulsating (50% duty cycle) transistor output. A typical application would be to convert an analogue signal from a probe to a pulsating output for input at a digital input of a PLC. Input, output and operating voltage , via choice of terminals. See connecting diagram. 0 VIN Voltage input Input 0 IIN Current , ±5%. · LED indication of input less that 5% / indication on probe failure. · Operating voltage 24VDC
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PXF-10 PXU-20 24VAC to 24VDC converter input output npn 547 transistor diagram Converter 230v to 24v Current to voltage Converter 4-20mA to 0-10v 40/50H 10VDC/0 0-50H 0-40H 24VAC

HI3-547-5

Abstract: Hi3-548-5 HI-546, HI-547, HI-548, HI-549 ® Data Sheet September 21, 2005 Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection The HI-546, HI-547 , DEVICE OF THE SWITCH N N ENABLE DELETE A3 OR A3 INPUT FOR HI-547, HI-548, HI-549 DELETE A2 OR A2 INPUT FOR HI-549 5 TO P-CHANNEL DEVICE OF THE SWITCH V- HI-546, HI-547, HI-548, HI , disturbing the signal path of other channels. Active protection circuitry assures that signal fidelity is
Intersil
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HI3-547-5 Hi3-548-5 HI9P547-9 HI9P548 HI9P548-9 HI9P549-9 5M-1982

hi9p0548-9z

Abstract: c 548 c transistor ® HI-546, HI-547, HI-548, HI-549 Data Sheet April 1, 2005 FN3150.4 Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection The HI-546, HI-547 , Pb-free requirements of IPC/JEDEC J STD-020. Applications · Data Acquisition · Industrial Controls · , mentioned are the property of their respective owners. HI-546, HI-547, HI-548, HI-549 Pinouts HI , disturbing the signal path of other channels. Active protection circuitry assures that signal fidelity is
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hi9p0548-9z c 548 c transistor MIL-STD-883

HI-546

Abstract: HI-547 HI-546, HI-547, HI-548, HI-549 ® Data Sheet August 2003 Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection The HI-546, HI-547, HI-548 and HI , All other trademarks mentioned are the property of their respective owners. HI-546, HI-547, HI , of other channels. Active protection circuitry assures that signal fidelity is maintained even , multiplexer supply loss occur. Each input presents 1k of resistance under this condition. These features make
Intersil
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c 879 transistor

Abstract: BFT24 Philips Semiconductors Product specification NPN 2 GHz wideband transistor ^ BFT24 PHILIPS INTERNATIONAL SbE D â  7110fl2b 004517b T41 «PHIN DESCRIPTION PINNING_ NPN transistor in a plastic SOT37 PIN , collector pocket phones, paging systems, etc. - The transistor features low current consumption (100 jiA , noise up to high frequencies. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VcBO , Note 1. T, is the temperature at the soldering point of the collector lead. November 1992 1133
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c 879 transistor 702 P TRANSISTOR t 326 Transistor
Abstract: w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor , collector The transistor features low current consumption (100 pA to 1 mA); due to its high transition , REFERENCE DATA PARAMETER SYMBOL TYP. CONDITIONS MAX. UNIT VC O B collector-base , '" dB p« h Note 1. T, is the temperature at the soldering point of the collector lead , Product specification bb53^31 0D320flfl ISA HIAPX NPN 2 GHz wideband transistor BFT24 b«lE D -
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003EQA7

nec 2741

Abstract: 2SC4226 DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier. 2.1 ± 0.1 It is suitable for a high density surface mount assembly since the transistor 1.25 ± 0.1 has been applied , quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books
NEC
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nec 2741 2SC4226 datasheet

Philips FA 291

Abstract: ADB 646 wideband transistor £ BFT24 ^â'" N AflER PHILIPS/DISCRETE hlE D DESCRIPTION NPN transistor in a plastic , , paging systems, etc. The transistor features low current consumption (100 nA to 1 mA); due to its high , REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter - 8 V , soldering point of the collector lead. November 1992 1133 Capability approved CECC 50 000 (issue 4), 1986 , GHz wideband transistor BFT24 N AHER PHILIPS/DISCRETE fc.'iE T> LIMITING VALUES In accordance with
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Philips FA 291 ADB 646 C 547 transistor 8891

TRANSISTOR SMD 019 CODE PACKAGE SOT23

Abstract: BSH201 marking P-channel enhancement mode MOS transistor MECHANICAL DATA Plastic surface mounted package; 3 leads SOT23 , mode MOS transistor DEFINITIONS Data sheet status Objective specification Product specification , Philips Semiconductors Product specification P-channel enhancement mode MOS transistor , package BSH201 SYMBOL s QUICK REFERENCE DATA VDS = -60 V ID = -0.3 A RDS(ON) 2.5 (VGS = -10 V , transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery
Philips Semiconductors
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TRANSISTOR SMD 019 CODE PACKAGE SOT23 BSH201 marking TRANSISTOR SMD MARKING CODE GFs TRANSISTOR SMD MARKING CODE X D TRANSISTOR SMD MARKING CODE SP transistor smd code marking nc g

BSH202

Abstract: SmD TRANSISTOR SP Semiconductors Product specification P-channel enhancement mode MOS transistor MECHANICAL DATA Plastic , Product specification P-channel enhancement mode MOS transistor DEFINITIONS Data sheet status , l l l Information as of 2 BSH202; P-channel enhancement mode MOS transistor · Description · , Standard Marking * Reel 9340 547 18215 Pack, SMD, Low Profile Standard SOT23 Full production 2 of , Philips Semiconductors Product specification P-channel enhancement mode MOS transistor
Philips Semiconductors
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SmD TRANSISTOR SP SP SOT23 TRANSISTOR SMD MARKING CODE 056

BSH203 marking

Abstract: sot23 marking BSH203 P-channel enhancement mode MOS transistor MECHANICAL DATA Plastic surface mounted package; 3 leads SOT23 , mode MOS transistor DEFINITIONS Data sheet status Objective specification Product specification , semiconductors Audio Clocks and Watches Data communications Microcontrollers Peripherals Information as of 2 , SOT23 Full production 2 of 2 Standard Marking * Reel BSH203 /T3 9340 547 19235 Pack, SMD, Low , Philips Semiconductors Product specification P-channel enhancement mode MOS transistor
Philips Semiconductors
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BSH203 marking sot23 marking BSH203 BSH203 ordering information TRANSISTOR SMD MARKING CODE rd

smd transistor marking code 24

Abstract: smd diode marking code t3 Product specification P-channel enhancement mode MOS transistor MECHANICAL DATA Plastic surface , specification P-channel enhancement mode MOS transistor DEFINITIONS Data sheet status Objective , Marking * Reel SOT23 Full production 2 of 2 Marking * Reel BSH205 /T3 9340 547 21235 Pack, SMD , Philips Semiconductors Product specification P-channel enhancement mode MOS transistor , mount package BSH205 SYMBOL s QUICK REFERENCE DATA VDS = -12 V ID = -0.75 A RDS(ON) 0.5 (VGS
Philips Semiconductors
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smd transistor marking code 24 smd diode marking code t3

TRANSISTOR SMD MARKING CODE 42

Abstract: TRANSISTOR SMD MARKING CODE UA enhancement mode MOS transistor MECHANICAL DATA Plastic surface mounted package; 6 leads SOT363 BSH106 , Semiconductors Product specification N-channel enhancement mode MOS transistor DEFINITIONS Data sheet , /T3 9340 547 16135 Pack, SMD, SOT363 Full production SOT363 Full production 2 of 2 Pack , Philips Semiconductors Product specification N-channel enhancement mode MOS transistor , mount package BSH106 SYMBOL d QUICK REFERENCE DATA VDS = 20 V ID = 1.05 A g RDS(ON) 250
Philips Semiconductors
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TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE 45 SMD Transistor Marking Code 71 TRANSISTOR SMD MARKING CODE 152 TRANSISTOR SMD MARKING CODE smd transistor catalog

TB-547

Abstract: do not form a part of this specification document. B. Electrical specifications and performance data , -183+ integrates the entire matching network with the majority of the bias circuit inside the package, reducing , Broad frequency range supports a wide array of applications from microwave radio and radar , to , fit for instrumentation and EW applications. High Isolation With reverse isolation of 38 dB (25 , stated in this specification document are intended to be excluded and do not form a part of this
Mini-Circuits
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TB-547 AVA-183 DQ849 ENV08T1 J-STD-020D C/85RH

A06 monolithic amplifier

Abstract: MMIC A06 . The AVA-183+ integrates the entire matching network with the majority of the bias circuit inside the , Wideband, 6 to 18 GHz Broad frequency range supports a wide array of applications from microwave radio , isolation of 38 dB (25 dB directivity), the AVA-183+ is an excellent choice for buffering broadband , expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification
Mini-Circuits
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A06 monolithic amplifier MMIC A06
Abstract: network with the majority of the bias circuit inside the package, reducing the need for complicated , supports a wide array of applications from microwave radio and radar , to military communications and , applications. High Isolation With reverse isolation of 38 dB (25 dB directivity), the AVA-183+ is an , intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuitâ'™s Mini-Circuits
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NV08T1
Abstract: mounting. Transistor amplifiers. This video gives further demonstrations of the use of transistors , styles - using the data book - testing with meters - mounting Transistor circuits demonstration - , of transistors and transistor circuits which is continued in Part 2. 55 mins. 3 232-4465 , . Summary/Duration This video continues the subject of transistor amplifiers introduced in Workshop 4 Part 2 , Data Pack G Issued March 2000 232-4465 Data Sheet Video library and industrial training -
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schottky diode

Abstract: DIODE NETWORKS of an ideally terminated line. Bolivar Drive, P.O. Box 547, Bradford, PA 16701 USA s , shown at the top of the next column. Bolivar Drive, P.O. Box 547, Bradford, PA 16701 USA 5 s , changing environment, engineers are increasingly confronted with issues that were of minor significance when using slower circuits. The most prominent of these issues is the effects described in the line , ESD circuit (or device) while protecting the input stage transistor also introduces very high
KOA Speer Electronics
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schottky diode DIODE NETWORKS

avalanche mode transistor

Abstract: CA3081 - COMMUNICATIONS'5 STANDARD PRODUCTS PAGE Standard Products Selection Guides Data , . 5-4 5-5 5-7 5-9 Data Acquisition Data Sheets - D/A Converters HI5721 HI5731 HI5741 HI5780, CXD2306 , . 5-11 5-12 5-13 5-14 5-15 m Data Acquisition Data Sheets - A/D Converters HI5703 HI5710A , , CA3096C CA3127 CA3146, CA3146A, CA3183, CA3183A CA3227, CA3246 General Purpose NPN Transistor A r r a y s . General Purpose High Current NPN Transistor A rra ys
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avalanche mode transistor CA3081 HI20201 CX20201-1 CX20202-1 RF1K49088 RF1K49090 RF1K49092

BF570

Abstract: L7E transistor TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. preamplifiers of TV receivers in combination with surface acoustic wave filters. QUICK REFERENCE DATA Collector-base voltage (open emitter) VCBO max. 40 V Collector-emitter voltage (open base) vCEO , % (see Fig. 3) V(int)rms typ. 120 mV MECHANICAL DATA Dimensions in mm Fig. 1 SOT-23. max -0.1 TOP , transistor N AMER PHILIPS/DISCRETE L7E D BF570 1500 fT (MHz) 1000 I
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L7E transistor S3T31 53T31 50S2//1
Abstract: HI-546, HI-547, HI-548, HI-549 ® Data Sheet September 21, 2005 Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection The HI-546, HI-547 , HI-549 5 TO P-CHANNEL DEVICE OF THE SWITCH V- HI-546, HI-547, HI-548, HI-549 Schematic , disturbing the signal path of other channels. Active protection circuitry assures that signal fidelity is , multiplexer supply loss occur. Each input presents 1kâ"¦ of resistance under this condition. These features Intersil
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HI4-0546

Abstract: HI1-546 FOR HI-547/883 N N TO P-CHANNEL DEVICE OF THE SWITCH N N TO N-CHANNEL DEVICE OF THE , -546/883, HI-547/883 The HI-546/883 and HI-547/883 are analog multiplexers with active overvoltage , damaging the device or disturbing the signal path of other channels. Active protection circuitry assures , circuiting should multiplexer supply loss occur. Each input presents 1k of resistance under this condition. These features make the HI-546/883 and HI-547/883 ideal for use in systems where the analog inputs
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HI1-546 HI4-0547 HI-506/883 HI-507/883 FN7994

transistor j 127

Abstract: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs , source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband , . Symbol Rth(JC) Thermal data Parameter Junction-case thermal resistance Value 1.2 Unit °C/W 2/10 , data LET9045C 3 Impedance data Figure 2. Impedance data D ZDL Typical input G Zin Typical drain load S Table 6. Impedance data Frequency 920 945 960 ZIN () 0.8 - j 0.08 0.7 - j
STMicroelectronics
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transistor j 127 2002/95/EC
Abstract: LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs , source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband , data Parameter Junction-case thermal resistance Value 1.2 Unit °C/W 2/10 Doc ID 16592 Rev 3 , Max. Unit W dB % VSWR Doc ID 16592 Rev 3 3/10 Impedance data LET9045F 3 Impedance data Figure 2. Impedance data D ZDL Typical input G Zin Typical drain load S Table 6 STMicroelectronics
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Transistor AC 187

Abstract: AC 187 npn transistor TO 1 specification b?E ]' > NPN 1 GHz wideband transistor BF747 PINNING FEATURES â'¢ Stable , DESCRIPTION base 2 â'¢ Good thermal stability. collector Low cost NPN transistor in a plastic , /or oscillator. QUICK REFERENCE DATA SYMBOL PARAMETER TYP. CONDITIONS MAX. UNIT , °C up to T s = 70 °C (note 1) Note 1. Ta is the temperature at the soldering point of the , 0024bfl3 001 Philips Semiconductors i APX N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor
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Transistor AC 187 AC 187 npn transistor TO 1 187 transistor npn

DB64

Abstract: BF747 /DISCRETE b?E NPN 1 GHz wideband transistor £ BF747 FEATURES â'¢ Stable oscillator operation â'¢ High current gain â'¢ Good thermal stability. DESCRIPTION Low cost NPN transistor in a plastic SOT23 , oscillator. QUICK REFERENCE DATA PINNING PIN DESCRIPTION Code: E15 1 base 2 emitter 3 collector 2 , 150 °C Note 1. Ta is the temperature at the soldering point of the collector tab. November 1992 , NPN 1 GHz wideband transistor BF747 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS THERMAL
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DB64 MBB400 transistor HJ 388 53-J31

BFG96

Abstract: TRANSISTOR P3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL SbE T> BFG96 711005b ODMSlfll OST «PHIN DESCRIPTION NPN transistor in a 4-lead dual-emitter , base J Bottom view Fig.1 T J3 MSB037 SOT103. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN , MHz; T^ = 25 °C - 40 - dBm Note 1. Tâ'ž is the temperature at the soldering point of the collector , transistor BFG96 PHILIPS INTERNATIONAL 5LE D â  7110fl2b 00453.52 T^S â  PHIN LIMITING VALUES In
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BFG32 TRANSISTOR P3 1351 NPN TRANSISTOR transistor SOT103 bfg96 scattering V 904 RL 805
Abstract: GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for , REFERENCE DATA UNIT MIN. TYP. MAX. VcBO collector-base voltage open emitter - - , . T, is the temperature at the soldering point of the collector lead. November 1992 338 , â  APX Product specification NPN 5 GHz wideband transistor BFG96 -
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0031ST2

BFG96

Abstract: bfg96 scattering PhHip^emiconductorî _ 0031H1H 553 M APX^^^^roduc^pecification NPN 5 GHz wideband transistor £ BFG96 â'"â'"1â'"â'"~ N AMER PHILIPS/DISCRETE blE I DESCRIPTION NPN transistor in a 4 , emitter 4 base Bottom view Fig.1 SOT103. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP , MHz; Tmb = 25 °C - 40 - dBm Note 1. T, Is the temperature at the soldering point of the collector , specification NPN 5 GHz wideband transistor BFG96 - N AMER PHILIPS/DISCRETE hRE » LIMITING VALUES In
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NPN transistor 2527 Transistor D 1881 transistor ITT 108 PHHI philips MATV amplifiers

dm 0765

Abstract: BFQ196 SIEMENS NPN Silicon RF Transistor Preliminary Data â'¢ For low-noise, low-distortion broadband , 176.6 1.60 0.796 151.7 2.14 53.3 0.101 55.7 0.356 174.1 1.70 0.803 149.4 2.02 50.9 0.106 54.7 0.359 , 87.5 0.033 51.8 0.327 -153.7 0.50 0.769 178.2 7.32 83.7 0.038 54.7 0.322 -159.9 0.60 0.770 174.9 6.11 , 1.75 0.789 148.5 2.15 50.8 0.109 55.2 0.354 170.8 1.80 0.786 147.7 2.09 49.9 0.112 54.7 0.357 170.3 , 0.765 171.8 5.47 77.1 0.049 59.5 0.327 -171.0 0.80 0.768 169.2 4.79 74.5 0.055 60.0 0.329 -173.7 0.90
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VCE0518I dm 0765 BFQ196 siemens DM 321 BFQ 244 cerec Q62702-F1348

transistor C 548 B

Abstract: 22iJ T| May 1997 1/2 547 BUY69A THERMAL DATA RthiTherm al R esistance Junction-case Max , *>11 r = 7 SGS-THOMSON ¡«imiiigTOMOigS_ BUY69A HIGH VOLTAGE NPN SILICON TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH , silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case. It is intended for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial applications
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22iJ
Abstract: 105 A/cm 2 H I-5 4 7 /8 8 3 TRANSISTOR COUNT: HI-546/883 485 HI-547/883 485 PROCESS: C M OS-Dl , © H a r r is H I-546/883 H I-547/883 Single 16/Differential 8 Channel CM OS Analog Multiplexers With Active Overvoltage Protection Description The HI-546/883 and HI-547/883 are analog m , greatly exceed either power supply w ithou t dam aging the device or d istu rbing the signal path of o , should m ultiplexer supply loss occur; each input presents 1k il of resistance under this con di tion -
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I-547/883

marking R24

Abstract: MARKING 702 6pin ic PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD The µPA801T has built-in 2 , quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books , ) Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of , 250 7 1.5 9 dB 1.2 VCE = 3 V, IC = 7 mA A smaller value among hFE of hFE1 = Q1, Q2
NEC
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marking R24 MARKING 702 6pin ic PA801T-T1

RS631

Abstract: f6351 used with 15. The data rate performance versus the length of the an isolated RS631-547 receiver , current loop l On and off output current levels guaranteed. system . (See the latter part of this data , capability of both the transmitter Data outputs compatible with LSTTL, TTL and and receiver is typically , length l On and off thresholds guaranteed The maximum data rate of a 20mA current loop l Input , length and Three state output compatible with data busses characteristics of the transmission line. For
RS Components
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RS631 f6351 circuit capacitive level transmitter nn17 F6351 HCPL4100 HCPL4200 LM334

NEC 7924

Abstract: ic 7924 DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS · Small Package · High Gain , quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books , tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 2SC5013-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of
NEC
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2SC5013-T1 NEC 7924 ic 7924 application of IC 4538

NEC NF 932

Abstract: ZO 103 MA 75 623 DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER , fabrication technique. 3 0.3 +0.1 ­0 The 2SC5009 is an NPN epitaxial silicon transistor designed for , to perforation side of the tape. 1. Emitter 2. Base 3. Collector * Please contact with , connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification RANK , ­54.7 ­58.8 ­62.5 ­66.1 ­69.3 ­72.3 ­75.6 ­78.3 ­81.2 ­84.3 ­87.4 ­90.7 ­95.2 ­99.4 ­104.0
NEC
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2SC5009-T1 NEC NF 932 ZO 103 MA 75 623 TD-2430 power transistor 3055

Hl-546

Abstract: LT 485 8 pin dip k f l of re sis ta n c e u n d e r th is c o n d itio n . Th ese fea tu re s m a ke th e H I-5 4 6 a , ic DIP, a nd a 2 8 pin P la stic L e a d e d C h ip C a rrie r (P LCC). A p p licatio n s · Data , 547 (PLCC) T O P V IE W . ro m IN IV [S IN H ¡ ¡ " " ' E , NW[¿ IH ,0|ñ IN, Qi w= £ 5 ? 5 f7 , re s sh o u ld b e follow ed Specifications H I- 5 4 6 /5 4 7 HI-546/547 Absolute Maximum , tic s S ectio n . HI-546/HI-547 -2 PARAMETER ANALO G C H A N N E L CHARACTERISTICS Full + 2 5 °C
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Hl-546 LT 485 8 pin dip lt 546 r in60c LT 546 H14P0546-5 H14P0547-5

AVA-183

Abstract: TB-547 matching network with the majority of the bias circuit inside the package, reducing the need for , a wide array of applications from microwave radio and radar , to military communications and , equalizer networks making it a great fit for instrumentation and EW applications. With reverse isolation of , shopping online see web site ® Provides ACTUAL Data Instantly at minicircuits.com Notes: 1 , intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
Mini-Circuits
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Abstract: (212) 227-6005 FAX: (973) 376-8960 HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand , . (class-AB) 28 26 1,6-28 1,6-28 5-47,5 (P.E.P.) 17(PE.P) Gp dB PL w MODE OF OPERATION , " flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA New Jersey Semiconductor
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BLW86 PINNING-SOT123

transistor SMD p90

Abstract: transistor 431 smd Transistor Load Pull Smith Chart Load Pull Data VDS = 28V, IDQ = 50mA j16 j8 j32 1000MHz , Data Sheet: Rev - A 06/14/2011 © 2011 TriQuint Semiconductor, Inc. - 4 of 15- Disclaimer , DC ­ 6 GHz 18 W GaN RF Power Transistor Load Pull Data RF performance that the device typically , RF Power Transistor Evaluation Board Performance: 5 to 6 GHz EVB Test Data, VDS=28V, IDQ , . Preliminary Data Sheet: Rev - A 06/14/2011 © 2011 TriQuint Semiconductor, Inc. - 11 of 15- Disclaimer
TriQuint Semiconductor
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T1G6001528-Q3 EAR99 transistor SMD p90 transistor 431 smd smd transistor 901 100A150JW500XC

98-PL-328

Abstract: matching network with the majority of the bias circuit inside the package, reducing the need for , a wide array of applications from microwave radio and radar , to military communications and , equalizer networks making it a great fit for instrumentation and EW applications. With reverse isolation of , shopping online see web site ® Provides ACTUAL Data Instantly at minicircuits.com Notes: 1 , intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
Mini-Circuits
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98-PL-328

transistor on 4409

Abstract: transistor 3504 nec DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD , °C 0.15 +0.1 ­0.05 in batches of 50). 0 to 0.1 0.9 ± 0.1 * Contact your NEC sales , Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No. P12104EJ2V0DS00 (2nd edition , : Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal of
NEC
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transistor on 4409 transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA

AVA-183

Abstract: Minicircuits pHEMT AVA-183 form a part of this specification sheet. 2. Electrical specifications and performance data contained , the entire matching network with the majority of the bias circuit inside the package, reducing the , Broad frequency range supports a wide array of applications from microwave radio and radar , to , fit for instrumentation and EW applications. High Isolation With reverse isolation of 38 dB (25 , Engine For detailed performance specs & shopping online see web site TM Provides ACTUAL Data
Mini-Circuits
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Minicircuits pHEMT AVA-183 PL-328 DATASHEET OF MINICIRCUITS AVA-183 263 qfn 3x3 F104 N5242A

nec 2651

Abstract: 2454 transistor DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE , · Mini-Mold package for evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA , to +150 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector °C CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including , case terminal are connected to the guard terminal of the bridge. hFE Class Class Marking T84
NEC
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2SC5177-T2 2SC5177-T1 nec 2651 2454 transistor hfe 4049 t84 marking SC-59

AN_216 Using the FT230X to Design a GPS Dongle

Abstract: AN_216 Receive Data (The receive data line of RS232) TXD Transmit Data (The transmit data line of RS232 , chip. Use of FTDI devices in life support and/or safety applications is entirely at the userâ'™s , Reference No.: FT_000698 Clearance No.: FTDI# 301 Table of Contents 1 Introduction , . 3 3 PCB Data , . 10 Appendix B â'" List of Figures
FTDI
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AN_216 Using the FT230X to Design a GPS Dongle AN_216 FTReferenceDesigns diode gp 429 FT230X FT230XQ

BSH103 MARKING

Abstract: TRANSISTOR SMD MARKING CODE DK DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete , Semiconductors Product specification N-channel enhancement mode MOS transistor DEFINITIONS Data Sheet , mode MOS transistor FEATURES · Very low threshold · High-speed switching · No secondary breakdown · , DESCRIPTION handbook, halfpage 3 d g s DESCRIPTION N-channel enhancement mode MOS transistor in a
Philips Semiconductors
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BSH103 MARKING TRANSISTOR SMD MARKING CODE DK TRANSISTOR SMD CODE 339 MBK504 339 marking code SMD transistor marking code UL SMD Transistor MAM273
Abstract: : TRANSISTOR COUNT: 83.9 x 159 x 19 mils HS-546 HS-547 METALLIZATION: Type: AI Thickness: 16kÃ'  , -883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HS1-546RH TOP VIEW â'¢ Gamma , GND |Ï2 â'¢ Data Acquisition Systems VREF i i ] ENABLE 17] ADDRESS Ao El à , the signal path of other channels. Active protection circuitry assures that signal fidelity is , circuiting should mul­ tiplexer supply loss occur: each input presents 1K£2 of resistance under this -
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S47RH HS-546RH HS-547RH
Abstract: transistors are shown in Table 1. â'¢ Junction temperature of the first stage transistor e) â'¢ T ji = , transistor â'¢ (V ) The thermal resistance realize this: (m W ) Rth(c-a)(N 2) of the heat , the device on the heat sink w ith above thermal resistance, junction temperatures of each transistor , °C. Since the annual average of ambient temperature is 30°C, junction temperatures of each transistor , 0.03) x 17.5+ TC = 30.7 + Tc (°C) Junction temperature of the third stage transistor T j 3 = (V CC2 -
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M57789 889-915MH
Abstract: wideband transistor FEATURES â'¢ Product specification L.7E D £ BFG25A/X PINNING Low , emitter 1 DESCRIPTION The BFG25A/X is a silicon npn transistor, primarily intended for use in RF , . 2 Mi Top view Fig.1 SOT143. The transistor is encapsulated in a four-lead dual emitter plastic SOT 143 envelope (cross emitter). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN , temperature at the soldering point of the collector tab. November 1992 687 Capability approved CECC -
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NEC IC D 553 C

Abstract: NEC JAPAN 3504 DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD , representatives to order samples for evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (Ta = 25 , T, T sig 1. 2. 3 4. Collector Emitter Base Emitter Caution; This transistor uses figh-frequency technology. Be careful not to allow excessive current to tow through the transistor, including , to the guard terminal of the bridge. tire class Class Marking hFE FB T84 70 to 140 2
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NEC IC D 553 C NEC JAPAN 3504 ic 723 cn 2SC5180-- 2SC5180-T2 P12104EJ2VODSOO TC-2477

A1273

Abstract: a1273 transistor H Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 547 Series Features Description Pin Configuration â'¢ Frequency Range: 10 to 500MHz The 547 , capacitors couple the RF through the amplifier. The 547 Series amplifiers are available in either the TO , '"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , Connector Option For TC-1 case the only connector option available is the -1. The -1 option consists of a
Agilent Technologies
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A1273 a1273 transistor 500MH MIL-HDBK-217E 5963-3240E 5963-2532E
Abstract: b7E P 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. pre­ amplifiers of TV receivers in combination with surface acoustic wave filters. QUICK REFERENCE DATA Collector-base voltage (open emitter , for K = 1% (see Fig. 3) v (int)rms max. 40 V 40 490 MHz MECHANICAL DATA Dimensions , 367 H A P X BF570 Silicon planar epitaxial transistor N AUER PHILIPS/DISCRETE 0 b?E I -
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BB012
Abstract: ) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer , Pulsed Power Transistor 500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Typical RF Data with , MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak , '  ï'·ï'  GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source , Operation MTTF of 5.3 * 106 hours Applications ï'·ï'  L-Band pulsed radar MAGX M/A-COM
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GX1214-500L GX1214-500LS

transistor w 431

Abstract: TIC 122 Transistor GaN RF Power Transistor Load Pull Smith Chart Load Pull Data VDS = 28V, IDQ = 50mA j16 j8 , T1G6001528-Q3 DC â'" 6 GHz 18 W GaN RF Power Transistor Applications â'¢ â'¢ â'¢ â'¢ â'¢ â , lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Pin # , limina ry Da ta She e t: Re v - A 06/ 14/ 2011 © 2011 T riQuint Se mic onduc tor, Inc . - 1 of 15- ECCN EAR99 EAR99 Description Packaged Transistor 5-6 GHz Eval Board Disc la ime r: Sub je c t
TriQuint Semiconductor
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transistor w 431 TIC 122 Transistor transistor SE 431 transistor je 123 transistor+431+smd 6 pin TRANSISTOR SMD CODE tm

2SA1977

Abstract: 2SC3583 DATA DATA PRELIMINARY SHEET SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES _ 2.8+0.2 High fT 0.4 +0.1 ­0.05 · PACKAGE , ­0.05 Equivalent NPN transistor is the 2SC3583. 2 0.95 High-speed switching characterstics , 0.230 - 83.1 2100 0.355 136 1.638 45.7 0.276 54.7 0.226 - 86.5 2200 , 54.7 0.264 - 81.3 10 2SA1977 S-PARAMETER (VCE = 8 V, IC = 20 mA, Zo = 50 ) f S21
NEC
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617-70 MARKING T92 nec 561

hi4p547

Abstract: C 547 transistor 28 pin P lastic Lea ded C h ip C a rrie r (PLCC). X A pp licatio n s · Data Acquisition · , tio n . HI-546/HI-547 -2 HI-546/547 -4 , - 5 TRUTH TABLES HI-546 PARAMETER AN ALO G C H , (Note 3) + 2 5 °C Full ID (OFF), O ff O utpu t Leakage Current (Note 3) + 2 5 °C HI-546 Full HI-547 Full , urrent (Note 3) -t-25°C HI-546 Full HI-547 Full Iq i F p Differential O ff O utput Leakage C urrent Full (HI-547 Only) DIGITAL IN PU T CHARACTERISTICS V a l , Input Low Threshold TTL Drive V a h , Input High
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I-546/547

15D transistor

Abstract: ALL THRJ PARTIES. REUftflLITY NOTE DUR Htm YEARS OF EXPERENCE DATA ACCUMULATION INDICATE THAT SOLDER , 65/75 jjS EPOXY FINISH: WATER CLEAR LIMITS OF SAFE OPERATION AT 25X PARAMETER MAX UNITS C/E BREAKDOWN , '"1KLB TO-18 CAN. HIGH OUTPUT SIUCON PHOTO TRANSISTOR, DARLINGTON CONFIGURATION. HERMETICALLY SEALED. CONFIDENTIAL INFORMATION HE INFORMATION CCNTANED IN THIS DOCUMENT IS THE PROPERTY OF LUhEX NC. EXCEPT AS SPECFICALLY AUTHORIZED IN WRITING BY LUNEX INC., THE HOLDER OF THIS DOCULENT SHALL KEEP ALL INFORMATION
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15D transistor 10BRDR

BF547

Abstract: HS11 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES â , cost NPN transistor in a plastic SOT23 package. MSB003 Top view Marking code: E16. Fig. 1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcEO collector-emitter voltage open , of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134 , soldering point of the collector pin. September 1995 2 This Material Copyrighted By Its Respective
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HS11 PHILIPS bf547 PHE0

MBB400

Abstract: vqb 201 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES â , DESCRIPTION Low cost NPN transistor in a plastic SOT23 package. PIN DESCRIPTION 1 base 2 emitter 3 collector Top view Marking code: E15. Fig. 1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP , = 500 MHz 1.2 1.6 GHz Note 1. Ts is the temperature at the soldering point of the collector pin , junction temperature - 150 °C Note 1. Ts is the temperature at the soldering point of the collector pin
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vqb 201 top 256 yn marking code 604 SOT23 TRANSISTOR K 314

nec 2741

Abstract: NEC IC D 553 C DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed , transistor has been applied small mini mold package. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 1.25 , . PACKING STYLE Embossed tape 8 mm wide. Pin3 (Collector)face to perforation side of the tape. Embossed tape 8 mm wide. P inl (Emitter), Pin2 (Base) face to perforation side of the tape. 2SC4226-T2 3
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2SG4226-T1 0368EJ3V0DS00
Abstract: power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer , MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak , -001214-500L00 GaN on SiC D-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband , without notice. Visit www.macomtech.com for additional data sheets and product information. â'¢ North , on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V2 M/A-COM
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MAGX-001214-SB3PPR MAGX-002114-500L00 MAGX-002114-500L0S

philips resistor 2322-153

Abstract: philips e3 Philips Semiconductors Data sheet status Product specification date of issue March 1993 bSE D m 711002b DGb3ab0 75b BLV97CE UHF power transistor IPHIN FEATURES â'¢ Internal input , metallization ensures excellent reliability DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 , communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common emitter class-AB
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philips resistor 2322-153 philips e3 SOT171 transistor C 548 B Philips ferroxcube wideband hf choke IEC134

Transistor NPN BC556

Abstract: BC557 SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES For Complementary With NPN Type BC546/547/548. N E K G J D MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT H VCBO -50 BC558 Collector-Emitter Voltage -30 BC556 -65 BC557 VCEO -45 , NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows. CLASSIFICATION
KEC
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Transistor NPN BC556 BC557 SWITCHING TRANSISTOR npn bc557 of transistor bc558 BC557 SWITCHING APPLICATION TRANSISTOR BC557 application note

ceramic disc capacitor 100nf 104

Abstract: C1-C18 N AMER PHILIPS/DISCRETE Philips Semiconductors Data sheet status Product specification date of issue March 1993 bTE » I BLV97CE UHF power transistor bbS3T31 OOETl?! E7à BAPX FEATURES , speciTication UHF power transistor BLV97CE MECHANICAL DATA Dimensions in mm Torque on screw: 2.25^ min 1 , epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic
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ceramic disc capacitor 100nf 104 C1-C18 TT 2222 npn capacitor 100nf multilayer transistor tt 2222 7Z26096

Bc558

Abstract: BC557 SWITCHING APPLICATION TRANSISTOR SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES For Complementary With NPN Type BC546/547/548. N E K G J D MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT H VCBO -50 BC558 Collector-Emitter Voltage -30 BC556 -65 BC557 VCEO -45 , dB NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows
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Abstract: transistor BLV97CE MECHANICAL DATA Dimensions in mm 11.5 â'™ 10.5â'™ 5.85 2.25 h min e 1 , N AUER PHILIPS/DISCRETE Philips Semiconductors Data sheet status Product specification date o f issue March 1993 b^Z T â  > bbSaiai D02H 71 276 BLV97CE UHF power transistor FEATURES QUICK REFERENCE DATA â'¢ Internal input matching to achieve high power gain â'¢ Ballasting , performance up to Th = 25 °C in a common emitter class-AB circuit. MODE OF OPERATION f (MHz) c.w -
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D02T176 MRC17S

C 547 B

Abstract: c547b BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V 625 mWatts , substance directive request MECHANICAL DATA · Case: TO-92 · Terminals: Solderable per MIL-STD , RA ME TE R S ymbol Value Uni ts C ollector - E mi tter Voltage B C 546 B C 547 B C 548 VC E O 65 45 30 V C ollector - B ase Voltage B C 546 B C 547 B C 548 VC B O 80 50 30 V E mi tter - B ase Voltage B C 546 B C 547 B C 548 VE B O 6.0 6.0 5.0
PanJit International
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BC548C C 547 B c547b c546b transistor C 546b C 546 B C548 MIL-STD-202 BC546B BC547B BC548B
Abstract: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 â  LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-Pâ'™ N Silicon transistor fo r use in , and facilitates the design o f wideband circuits. The transistor is housed in a metal-ceramic envelope (FO-41B). QUICK REFERENCE DATA R.F. performance up to T mb = 25 °C in an unneutralized -
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RTC439 LTE21050R

ATC100B

Abstract: LDMOS 15w RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V 8/20/03 MAPLST2122 , 20 Vdc Total Power Dissipation @ TC = 25 °C PD 54.7 W Storage Temperature TSTG , MOS devices should be observed. RF Power LDMOS Transistor, 2110 - 2170 MHz, 15W, W-CDMA , , f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 2110 - 2170 MHz, 15W, W-CDMA
M/A-COM
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MAPLST2122-015CF ATC100B LDMOS 15w A05T transistor amplifier a05t 28VDC 096MH 2110MH

230v to 12v dc circuit diagrams

Abstract: 50v AC to 12v 15A dc circuit diagrams ) depending on the terminal used. Solid state output with triac (AC) or transistor (DC) with LED indication of energized output. Intermittent flashing of LED indicating timing period (over 6 sec.).The version , sequence is repeated until the supply voltage is disconnected. The duration of the pause and pulse , : Tel: +44 181 546 4283 Fax: +44 181 547 3628 E-mail: bcs@brodersen.co.uk Germany: Tel: +49 208 , self-lifting clamps shrouded in accordance to VDE0106 (finger and back of hand protection). Mains frequency
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230v to 12v dc circuit diagrams 50v AC to 12v 15A dc circuit diagrams 218a3 on off switch with time delay 10/A2 11/A3 50081-1/EN

TRANSISTOR S 838

Abstract: transistor c 838 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . , FM equipment operating in the range of 80 6 -9 6 0 MHz. · Specified 12.5 Volt, 870 MHz , MHz RF POWER TRANSISTOR NPN SILICON · Tested for Load Mismatch Stress at All Phase Angles with 10:1 , (continued) MRF847 2-542 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS - continued 0 c = 25 , MOTOROLA RF DEVICE DATA MRF847 2-543 Pout. OUTPUT POWER (WATTS) 800 Pln, INPUT POWER (WATTS
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TRANSISTOR S 838 transistor c 838 TRANSISTOR motorola 838
Abstract: Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is , , and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL Vps !§ , Product Specification PowerMOS transistor BUK455-2Q0A/B STATIC CHARACTERISTICS Tm b = 25 `C , tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source -
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BUK455 T0220AB
Abstract: Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic , purpose switching applications. QUICK REFERENCE DATA SYMBOL VD s Id Plot °DS(O N) PARAMETER , Mounted on any PCB e.g. Fig.18 Mounted on PCB of Fig.18 MIN. - TYP. 40 - MAX. . UNIT K/W K/W , Product Specification PowerMOS transistor Logic level FET STATIC CHARACTERISTICS T| = 25 'C unless -
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ic marking ACOM

Abstract: vk200 consists of measuring h FE at the data sheet conditions and color coding the device to predetermined hFE ranges within the normal hFE limits. A color dot is added to the marking on top of the cap. Any two , Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF455 . . . designed for power amplifier applications in industrial, commercial , Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55% 60 W, 30 MHz RF POWER TRANSISTOR NPN
M/A-COM
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ic marking ACOM vk200 beads ferroxcube FERROXCUBE VK200 marking code macom VK200 FERRITE

transistor 2S D 716

Abstract: motorola C 547 DATA "fl^ DE |b3ti75SM â¡ â¡7'ì271 4 89D 79271 D MRF848 Advance Information The RF Line NPN SILICON RF POWER TRANSISTOR . designed for 12.5 Volt UHF large-signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 804-960 MHz. â'¢ Motorola , 60 W 800-960 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit , 991 1041 0390 0410 C 636 736 0270 0390 D 131 228 0075 0090 E 2.42 232 0055 0115 F 547 536 0110
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transistor 2S D 716 motorola C 547 motorola MN transistor transistor rf m 1104 V145M Epsilam-10 56-390-65/3B

2SC5180

Abstract: 2SC5180-T1 DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE , NEC sales representatives to order samples for evaluation (available in batches of 50). ABSOLUTE , ± 0.1 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including , : Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal of
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2SC5180-T1 transistor y 5910

907 TRANSISTOR smd

Abstract: smd transistor 547 PMILIPsTbÌSCRETÌ b7E D PNP 5 GHz wideband transistor g BFQ149 DESCRIPTION PNP transistor in a SOT89 envelope , MSB013 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT , 150 °C Ti junction temperature - 150 °C Note 1. Ta is the temperature at the soldering point of , specification -N AHER PHILIPS/DISCRETE b7E D- PNP 5 GHz wideband transistor BFQ149 THERMAL RESISTANCE SYMBOL , 135 °C (note 1) 40 K/W Note 1. T. is the temperature at the soldering point of the collector tab
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907 TRANSISTOR smd smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc
Abstract: Philips Semiconductors Product Specification PowerMOS transistor BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is , , and in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL V ds Iq , 546 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor STATIC , V; Rqs = 50 SI; R gon = 50 £2 Measured from contact screw on tab to centre of die Measured from -
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AVA-183

Abstract: OF MINICIRCUITS AVA-183 form a part of this specification sheet. 2. Electrical specifications and performance data contained , the entire matching network with the majority of the bias circuit inside the package, reducing the , Broad frequency range supports a wide array of applications from microwave radio and radar , to , fit for instrumentation and EW applications. High Isolation With reverse isolation of 38 dB (25 , Engine For detailed performance specs & shopping online see web site ® Provides ACTUAL Data
Mini-Circuits
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OF MINICIRCUITS AVA-183

A1381 transistor

Abstract: Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 554 Series Features Description Pin Configuration â'¢ Frequency Range: 5 to 500 MHz The 547 Series is a thin-film RF , through the amplifier. The 547 Series amplifiers are available in either the TO-8 hermetic case or , Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90Â , Connector Option For TC-1 case the only connector option available is the -1. The -1 option consists of a
Teledyne Cougar
Original
A1381 transistor
Abstract: matching network with the majority of the bias circuit inside the package, reducing the need for , a wide array of applications from microwave radio and radar , to military communications and , equalizer networks making it a great fit for instrumentation and EW applications. With reverse isolation of , shopping online see web site ® Provides ACTUAL Data Instantly at minicircuits.com Notes: 1 , intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications Mini-Circuits
Original
Abstract: epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device , 2.0 °c/w THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 1/4 , CIRCUIT + 15 V S 7 SGSâ'™IHOMSON _ â  C9 DD?D72b 547 SD1733 (TH513) PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any -
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UJ-03

Abstract: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525DF , transistor in a plastic full-pack envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base , REFERENCE DATA SYMBOL PARAMETER Collector-emitter voltage peak s Æ S is Collector-emitter voltage , . July 1998 547 Rev 1.000 Philips Semiconductors Objective specification Silicon Diffused
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UJ-03
Abstract: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D , transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial , QUICK REFERENCE DATA SYMBOL ^CEO PARAMETER collector-emitter voltage TYP. MAX. - -15 , Note 1. Ta is the temperature at the soldering point of the collector tab. November 1992 1013 , wideband transistor BFQ149 THERMAL RESISTANCE PARAMETER SYMBOL F j-» *tt> thermal -
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agilent marking style

Abstract: matching network with the majority of the bias circuit inside the package, reducing the need for , a wide array of applications from microwave radio and radar , to military communications and , equalizer networks making it a great fit for instrumentation and EW applications. With reverse isolation of , shopping online see web site ® Provides ACTUAL Data Instantly at minicircuits.com Notes: 1 , intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
Mini-Circuits
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agilent marking style

Teledyne 1339

Abstract: Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 554 Series Features · , Compensated · 5-Volt System Description The 547 Series is a thin-film RF bipolar amplifier using lossless , voltage variations. Internal blocking capacitors couple the RF through the amplifier. The 547 Series , Characteristics1 JC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , Option For TC-1 case the only connector option available is the -1. The -1 option consists of a SMA
Teledyne Cougar
Original
Teledyne 1339 UTC--21

DM 0365 R pin EQUIVALENT

Abstract: transistor rf m 1104 b ? a S M 8 9 D 79271 D 7'ì271 4 SEMICONDUCTOR TECHNICAL DATA MRF848 A d v a n ce In form ation T he RF Line NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt UHF large-signal , range of 8 0 4 -9 6 0 MHz. · M otorola Advanced A m plifier Concept Package · Specified 12.5 Volt, 870 , Migration · Silicon Nitride Passivated 60 W 8 0 0 -9 6 0 M H z RF POWER TRANSISTOR N P N S IL IC O , C n f F H J K L N 0 m m ETERS MAX UH 2451 25.02 1041 991 6.S6 7.36 131 228 232 2.42 547 536 3.94
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DM 0365 R pin EQUIVALENT DM 0365 R DM 0365 R pin
Abstract: matching network with the majority of the bias circuit inside the package, reducing the need for , a wide array of applications from microwave radio and radar , to military communications and , equalizer networks making it a great fit for instrumentation and EW applications. With reverse isolation of , shopping online see web site ® Provides ACTUAL Data Instantly at minicircuits.com Notes: 1 , intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications Mini-Circuits
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nec 2401 831

Abstract: nec 2401 DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low , quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books , side of the tape. 0.15 50 pcs/Unit. 0 to 0.1 2SC5010 PACKING STYLE 0.6 QUANTITY , terminal of the three-terminal capacitance bridge. hFE Classification Rank Marking 83 hFE 2
NEC
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2SC5010-T1 nec 2401 831 nec 2401 marking 83 437 20000 7749 transistor

sc 6038

Abstract: 2SC5634 , originating in the use of any product data, diagrams, charts or circuit application examples contained in , SMALL-SIGNAL TRANSISTOR 2SC5634 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL , gain Noise figure VCE =5V, I C=5mA, f =1GHz 250 dB dB SMALL-SIGNAL TRANSISTOR 2SC5634 , 100.0 10.0 COLLECTOR CURRENT IC(mA) SMALL-SIGNAL TRANSISTOR 2SC5634 FOR HIGH FREQUENCY , 53.4 54.4 54.7 55.1 55.7 56.0 56.1 56.4 56.2 56.2 56.3 56.0 55.6 MAG 0.420 0.389
Isahaya Electronics
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sc 6038 a 4503 data sheet

2SC5009

Abstract: 2SC5009-T1 . DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI , over all the business of both companies. Therefore, although the old company name remains in this , current as of the date this document is issued. Such information, however, is subject to change without , infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No
Renesas Electronics
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sc 6038

Abstract: 2SC5636 , originating in the use of any product data, diagrams, charts or circuit application examples contained in , SMALL-SIGNAL TRANSISTOR 2SC5636 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL , gain Noise figure VCE =5V, I C=5mA, f =1GHz 250 dB dB SMALL-SIGNAL TRANSISTOR 2SC5636 , 100.0 10.0 COLLECTOR CURRENT IC(mA) SMALL-SIGNAL TRANSISTOR 2SC5636 FOR HIGH FREQUENCY , 53.4 54.4 54.7 55.1 55.7 56.0 56.1 56.4 56.2 56.2 56.3 56.0 55.6 MAG 0.420 0.389
Isahaya Electronics
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transistor 3669 A 4503 ic making 528 1346 transistor SC-90

IC 7414 in capacitance meter

Abstract: 2SC5676 DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY , , refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date , wide embossed taping 2SC5676-T1 3 kpcs/reel · Pin 3 (Collector) face the perforation side of , hFE Value 2 FB 100 to 160 Data Sheet P15286EJ1V0DS 2SC5676 TYPICAL CHARACTERISTICS , 4 5 IB = 20 µ A 6 7 Collector to Emitter Voltage VCE (V) Data Sheet P15286EJ1V0DS 3
NEC
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IC 7414 in capacitance meter NEC 2532

sc 6038

Abstract: 2SC5635 , originating in the use of any product data, diagrams, charts or circuit application examples contained in , SMALL-SIGNAL TRANSISTOR 2SC5635 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL , gain Noise figure VCE =5V, I C=5mA, f =1GHz 250 dB dB SMALL-SIGNAL TRANSISTOR 2SC5635 , 100.0 10.0 COLLECTOR CURRENT IC(mA) SMALL-SIGNAL TRANSISTOR 2SC5635 FOR HIGH FREQUENCY , 53.4 54.4 54.7 55.1 55.7 56.0 56.1 56.4 56.2 56.2 56.3 56.0 55.6 MAG 0.420 0.389
Isahaya Electronics
Original
A 3141 s11 ic a 4503

equivalent transistor c 5888

Abstract: specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING â'¢ High power gain , base â'¢ SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. Fig.1 SOT323 , phones, pagers etc., with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER , to Ts = 93 °C (note 1) Note 1. T, is the temperature at the soldering point of the collector tab , transistor BFS520 THERMAL RESISTANCE P(h |-s THERMAL RESISTANCE CONDITIONS PARAMETER
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equivalent transistor c 5888 S3R31

RD01MUS1-101

Abstract: RD01MSU1 , Silicon MOSFET Power Transistor 520MHz,1W RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA) Freq. [MHz , PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 4.4+/-0.1 , stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.1 MAX Terminal No. 1 : GATE , following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead
Mitsubishi
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RD01MUS1-101 transistor 636 mitsubishi epoxi resin 1351 transistor fet 547 rd01mus1 applications 520MH

2779, transistor

Abstract: 1348 transistor MOSFET Power Transistor 520MHz,1W RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA) Freq. [MHz] 100 , PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 4.4+/-0.1 TYPE , For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. Terminal No. 1 , MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
Mitsubishi
Original
2779, transistor 1348 transistor

GD-32

Abstract: MGF4941 use of product data, graphs, charts, programs, algorithms or other applied circuit examples described , InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is , consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any , 133.9 0.875 113.0 0.883 94.9 0.895 79.7 0.901 66.6 0.912 54.7 0.923 43.8 0.934 34.0 0.947 25.0 0.945
Mitsubishi
Original
GD-32 MGF4941

mgf4941al

Abstract: GD-32 use of product data, graphs, charts, programs, algorithms or other applied circuit examples described , InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is , making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap , -178.2 0.870 157.5 0.868 133.9 0.875 113.0 0.883 94.9 0.895 79.7 0.901 66.6 0.912 54.7 0.923 43.8 0.934
Mitsubishi
Original
MITSUBISHI electric R22

1 928 403 698

Abstract: 2SC4227 PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD The µPA812T has built-in 2 , quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books , of the tape. Remark If you require an evaluation sample, please contact an NEC Sales +0.1 , A smaller value among hFE of hFE1 = Q1, Q2 A larger value among hFE of hFE2 = Q1, Q2 2.7
NEC
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1 928 403 698 PA812T-T1

bb412

Abstract: c 2026 y transistor Philips Semiconductors Product specification NPN 1 GHz wideband transistor FEATURES · Stable , collector DESCRIPTION M arking code: E15. BF747 DESCRIPTION Low cost NPN transistor in a plastic SOT23 package. n 3 1U Top view U 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCEO VCBO V ebo > C M P.ot *T Note 1. Ts is the temperature at the soldering point of the collector pin , Plot Tstg T) Note 1. Ts is the temperature at the soldering point of the collector pin. September
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bb412 c 2026 y transistor bb407

YL2 sot23

Abstract: bb407 transistor BF547 M BB399 VCE= 10V;f = 500 M Hz. Fig.5 Transition frequency as a function of , Philips Semiconductors Product specification NPN 1 GHz wideband transistor FEATURES · , transistor in a plastic SOT23 package. n3 Top view 1U M S 8 0 0 3 U2 code: E16. Fig.l SOT23. QUICK REFERENCE DATA SYMBOL V CEO VcB O V ebo PARAMETER collector-emitter voltage collector-base , point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System
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YL2 sot23 8B397 Y1 TRANSISTOR MARKING SOT23 5
Abstract: (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data_ i_ BF = , SIEMENS BFR 181W NPN Silicon RF Transistor â'¢ For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA â'¢ f j = 8GHz F = 1.45dB at 900MHz ESP , are ready to use, no scallirig is necessary. Extracted on behalf of SIEM ENS Small Signal , 1686 fl235bGS D1220ÃÃ 547 1998-11-01 SIEMENS BFR 181W Power Gain Gma, Gms = f{l/CE -
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900MH Q62702-F1491
Abstract: bbS3131 0D24AA0 0T0 H A P X Philips Semiconductors NPN 6 GHz wideband transistor  , base 3 emitter DESCRIPTION 4 emitter The BFG93 is a silicon npn transistor in a 4 , REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MIN. MAX. UNIT VC O B , figure 4.5 Note 1. Ts is the temperature at the soldering point of the collector tab. November , GHz wideband transistor BFG93A; BFG93A/X; BFG93A/XR LIMITING VALUES In accordance with the -
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S3131 MSB035

BFR92A

Abstract: BFR92AW of collector current; typical values. 1995 Sep 18 5 â  VllOflEb 0DT3T7G 547 This Material , Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES , frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini , 2 emitter 3 collector MBC870 Top view Marking code: P2. Fig.1 SOT323 QUICK REFERENCE DATA , the temperature at the soldering point of the collector pin. 1995 Sep 18 2 m 711062b DMBIb? 752 â
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BFR92A marking 1GL marking G SOT323 Transistor 0DT3T73

BC557 SWITCHING TRANSISTOR

Abstract: BC557 SEMICONDUCTOR TECHNICAL DATA BC556/7/8 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE â'¢ For Complementary With NPN Type BC546/547/548. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage BC556 VcBO -80 V BC557 -50 BC558 -30 Collector-Emitter Voltage BC556 VcEO -65 V BC557 -45 BC558 -30 , 10 NOTE : According to the value of Iife the BC556, BC557, BC558 are classified as follows
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of bc557 BC558 NPN Transistor of pnp transistor BC557 BC557 TRANSISTOR application NPN transistor bc558 Scans-00124909

VK200 rfc

Abstract: MRF224 MOTOROLA Order this document by MRF224/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF224 . . . designed for 12.5 Volt VHF large­signal power amplifier , 40 W, 175 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Symbol Value Unit , devices are operated as RF amplifiers. ©MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF224 1 , versus Supply Voltage MRF224 2 MOTOROLA RF DEVICE DATA Zin 180 f = 130 MHz 180 f = 130 MHz
Motorola
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VK200 rfc motorola rf Power Transistor MOTOROLA POWER TRANSISTOR 14

mrf455

Abstract: Motorola transistors MRF455 consists of measuring h FE at the data sheet conditions and color coding the device to predetermined hFE ranges within the normal hFE limits. A color dot is added to the marking on top of the cap. Any two , MOTOROLA Order this document by MRF455/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF455 . . . designed for power amplifier applications in industrial , Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55% 60 W, 30 MHz RF POWER TRANSISTOR NPN
Motorola
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Motorola transistors MRF455 MOTOROLA 381 equivalent MRF455 APPLICATION NOTES MRF455 motorola ferroxcube ferrite beads MATCHED PAIRS Motorola

2SC5186

Abstract: 2SC5436 DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR , change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all , 2SC5436-T1 3 kpcs/reel · Pin 3 (collector) face the perforation side of the tape Remark To order , 90 to 130 Data Sheet PU10104EJ01V0DS 2SC5436 TYPICAL CHARACTERISTICS (Unless otherwise
NEC
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2SC5186 nec 7440

2SC5006

Abstract: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA821TC NPN SILICON EPITAXIAL TWIN TRANSISTOR , Base) face to perforation side of the tape. Taping products (3 kp/reel) Remark To order , (auto-balancing bridge method). Emitter should be connected to the guard pin of capacitance meter. hFE CLASSIFICATION Rank Marking hFE Value 2 FB 81 70 to 140 Data Sheet P14552EJ1V0DS00 µPA821TC , 0 1 2 3 4 5 6 10 0.1 Collector to Emitter Voltage VCE (V) Data Sheet
NEC
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2SC5006 PA821TC-T1

IC 2561 D 431

Abstract: NK 0609 tf Philips Semiconductors 0024880 OTO lAPX Product specification NPN 6 GHz wideband transistor , BFG93A/X (Fig.1 ) Code: V15 transistor in a 4-pin, dual-emitter 1 collector plastic SOT 143 envelope , Fig.1 SOT143. 3 4 Top view MS¡ Fig.2 SOT143R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS , the temperature at the soldering point of the collector tab. November 1992 783 Capability approved , wideband transistor BFG93A; BFG93A/X; BFG93A/XR LIMITING VALUES In accordance with the Absolute Maximum
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IC 2561 D 431 NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 MSB014
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