NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd ... | OCR Scan |
3 pages, |
4N37 4N36 4N31 4N28 4N27W C 547 transistor TRANSISTOR 547 4N35 transistor 45 f 122 4N27W abstract |
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| Abstract: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER · HIGH VOLTAGE , /547 : BC548/549/550 BC548/549/550 Collector Current (DC) Collector Dissipation Junction Temperature Storage , Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC546/547/548 : BC549/550 BC549/550 : BC549 BC549 , 420-800 Rev. B ©1999 Fairchild Semiconductor Corporation BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild ... | Original |
3 pages, |
information of BC548 transistor bc547 specifications BC546..547 transistor b 548 NPN transistor bc548 BC549 NPN transistor download datasheet data of transistor 547 transistor C 548 B Amplifier with transistor BC548 Amplifier with transistor BC549 bc546 fairchild transistor bc546 BC546/547/548/549/550 BC546 BC546/547/548/549/550 abstract |
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| Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 4N33 series of optoisolators has a silicon npn Planar photo-Darlington transistor coupled to a GaAs , to 10% of peak value. 'Indicates JEDEC: Registered Data. , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output ... | OCR Scan |
4 pages, |
4N36 4N35 4N33 4N32 4N31 4N30 4N29 4N28 4N27W 4N27W abstract |
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| Abstract: gate of the P-Channel MOSFET is at low voltage level, the transistor is turned on to allow current to , level, the transistor is turned off and the MAX II device is in powered-down state. Because of the 1-k , automatically reads the data from the counter and writes the data into the UFM. Upon completion of the task , reads back the data before the device powers down again. The controller then reloads the registers of , significant bit (MSB) signal is used to trigger the process of saving the counter data into the UFM and ... | Original |
8 pages, |
AN-547-1 547 MOSFET AN-547-1 abstract |
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| Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd ... | OCR Scan |
4 pages, |
ic 4n35 4N37 4N36 4N35 4N31 4N28 4N27W 4N27W abstract |
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| Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd ... | OCR Scan |
4 pages, |
4N26 4N27 4N27W 4N28 340 opto isolator 4N31 4N35 4N36 ic 4n26 opto isolator 4n26 opto 4n25 4n26 opto isolator 4N25 4n27 opto isolator 4N2S 4N27W abstract |
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| Abstract: kil of resistance under this condition. These features make the HI-546/883 HI-546/883 and HI-547/883 ideal for , CURRENT DENSITY: 1.4 x 1 , January 1989 HI-546/883 HI-546/883 H1-547/883 Single 16/Differential 8 Channel CMOS Analog Multiplexers , and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • No Channel Interaction During , ).1-0/« • Power Dissipation (Max.).45mW Applications • Data ... | OCR Scan |
11 pages, |
VT 546 k 547 HI1-546 TRANSISTOR 547 HI1-546/883 HI-546/883 H1-547/883 HI-546/883 abstract |
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| Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd ... | OCR Scan |
3 pages, |
4N37 4N36 4N35 4N31 4N28 4N27W 4N27W abstract |
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| Abstract: 1-GHz Oscillator 400 25 4.0 322 File No. 547 40909 PERFORMANCE DATA FREQUENCY (f)-GHI 92CS- 92CS- 19796 , 6-Schematic diagram of basic oscii/ator circuit. 323 40909 File No. 547 UNIVERSAL BREADBOARD OSCILLATOR , File No. 547 DQQB//0 RF Power Transistors Solid State Division 40909 2-W, 2-GHz Emitter-Ballasted Silicon N-P-N Overlay Transistor For Microwave Fundamental-Frequency Oscillators Features: â- , PACKAGE RCA-40909 RCA-40909* is an epitaxial silicon n-p-n transistor with overlay multiple-emitter-site ... | OCR Scan |
4 pages, |
rca409 colpitts oscillator construction colpitts oscillator 1GHz Oscillator RCA 444 datasheet abstract |
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| Abstract: : ST952TQF7 ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , 82. TER1 - TER2 These pins control the external Q5 transistor, in which the main part of the line , interface with most of public networks in the world. The return loss is externally adjustable to real or complex impedance. In case of a wrong connection in a digital phone line, ST952 ST952 detects the over current , capacitive isolation barrier, ST952 ST952 activates the off-hook or the CLID external transistor switch. LIM2 ... | Original |
12 pages, |
VTAC 4 TQFP32 ST952TQF7 ST75951 BC 547 PIN DIAGRAM "caller ID" "type 2" hybrid ST952 STMicroelectronics Krypton IDG 600 ST952 abstract |
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| ST | HIGH VOLTAGE NPN SILICON TRANSISTOR Datasheet HIGH VOLTAGE NPN SILICON TRANSISTOR BUY69A BUY69A BUY69A BUY69A Document Format Size SILICON TRANSISTOR n STM PREFERRED SALESTYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n HIGH The BUY69A BUY69A BUY69A BUY69A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case. It is intended for horizontal deflection output stage of CTV receivers and high voltage, fast switching www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5395.htm |
STMicroelectronics | 20/10/2000 | 6.82 Kb | HTM | 5395.htm |
| ST | HIGH VOLTAGE NPN SILICON TRANSISTOR Datasheet HIGH VOLTAGE NPN SILICON TRANSISTOR BUY69A BUY69A BUY69A BUY69A Text Format BUY69A BUY69A BUY69A BUY69A HIGH VOLTAGE NPN SILICON TRANSISTOR n STM PREFERRED SALESTYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n HIGH CURRENT CAPABILITY n The BUY69A BUY69A BUY69A BUY69A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case. It is intended www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5395-v3.htm |
STMicroelectronics | 25/05/2000 | 6.52 Kb | HTM | 5395-v3.htm |
| ST | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR Datasheet HIGH VOLTAGE NPN SILICON POWER TRANSISTOR BU326A BU326A BU326A BU326A Document Format TRANSISTOR n STMicroelectronics PREFERRED SALESTYPE n NPN TRANSISTOR n FAST SWITCHING SPEED BU326A BU326A BU326A BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly /4 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.33 o www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5357-v3.htm |
STMicroelectronics | 19/12/2000 | 6.15 Kb | HTM | 5357-v3.htm |
| ST | HIGH CURRENT NPN SILICON TRANSISTOR Datasheet HIGH CURRENT NPN SILICON TRANSISTOR BUV20 BUV20 BUV20 BUV20 Document Format Size /01/2000 4 Raw Text Format BUV20 BUV20 BUV20 BUV20 HIGH CURRENT NPN SILICON TRANSISTOR n STMicroelectronics PREFERRED SALESTYPE n NPN TRANSISTOR n HIGH CURRENT CAPABILITY n FAST SWITCHING The BUV20 BUV20 BUV20 BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4112-v3.htm |
STMicroelectronics | 25/05/2000 | 6.42 Kb | HTM | 4112-v3.htm |
| ST | HIGH CURRENT NPN SILICON TRANSISTOR Datasheet HIGH CURRENT NPN SILICON TRANSISTOR BUV20 BUV20 BUV20 BUV20 Document Format Size Document Number Date Format BUV20 BUV20 BUV20 BUV20 HIGH CURRENT NPN SILICON TRANSISTOR n STMicroelectronics PREFERRED SALESTYPE n NPN TRANSISTOR n HIGH CURRENT CAPABILITY n FAST SWITCHING SPEED n HIGH RUGGEDNESS The BUV20 BUV20 BUV20 BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4112.htm |
STMicroelectronics | 20/10/2000 | 6.75 Kb | HTM | 4112.htm |
| ST | HIGH CURRENT NPN SILICON TRANSISTOR Datasheet HIGH CURRENT NPN SILICON TRANSISTOR BUR51 BUR51 BUR51 BUR51 Document Format Size SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n NPN TRANSISTOR DESCRIPTION The BUR51 BUR51 BUR51 BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case 200 o C 1/4 THERMAL DATA R thj-case Thermal Resistance Junction www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4420.htm |
STMicroelectronics | 20/10/2000 | 6.83 Kb | HTM | 4420.htm |
| ST | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR Datasheet HIGH VOLTAGE NPN SILICON POWER TRANSISTOR BUX80 BUX80 BUX80 BUX80 Document Format Size SILICON POWER TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n NPN TRANSISTOR n FAST SWITCHING SPEED The BUX80 BUX80 BUX80 BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly to 150 o C T j Max Operating Junction Temperature 150 o C 1/4 THERMAL DATA R thj www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4245.htm |
STMicroelectronics | 20/10/2000 | 6.93 Kb | HTM | 4245.htm |
| ST | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR Datasheet HIGH VOLTAGE NPN SILICON POWER TRANSISTOR BUX80 BUX80 BUX80 BUX80 Text Format BUX80 BUX80 BUX80 BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n NPN TRANSISTOR n FAST SWITCHING SPEED APPLICATIONS NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4245-v3.htm |
STMicroelectronics | 25/05/2000 | 6.6 Kb | HTM | 4245-v3.htm |
| ST | HIGH CURRENT NPN SILICON TRANSISTOR Datasheet HIGH CURRENT NPN SILICON TRANSISTOR BUR51 BUR51 BUR51 BUR51 Text Format BUR51 BUR51 BUR51 BUR51 HIGH CURRENT NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n NPN TRANSISTOR DESCRIPTION The BUR51 BUR51 BUR51 BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4420-v3.htm |
STMicroelectronics | 25/05/2000 | 6.5 Kb | HTM | 4420-v3.htm |
| ST | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR Datasheet HIGH VOLTAGE NPN SILICON POWER TRANSISTOR BU326A BU326A BU326A BU326A Document Format Size SILICON POWER TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n NPN TRANSISTOR n FAST SWITCHING SPEED silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for Junction Temperature 200 o C 1/4 THERMAL DATA R thj-case Thermal Resistance Junction www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5357.htm |
STMicroelectronics | 20/10/2000 | 6.56 Kb | HTM | 5357.htm |