NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

data of transistor 547

Catalog Datasheet Results Type PDF Document Tags
Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd ... OCR Scan
datasheet

3 pages,
82.03 Kb

4N27W 4N28 4N31 4n33 and 4n35 4N36 4N37 transistor 45 f 123 4N35 C 547 transistor TRANSISTOR 547 transistor 45 f 122 datasheet abstract
datasheet frame
Abstract: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER · HIGH VOLTAGE , /547 : BC548/549/550 BC548/549/550 Collector Current (DC) Collector Dissipation Junction Temperature Storage , Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC546/547/548 : BC549/550 BC549/550 : BC549 BC549 , 420-800 Rev. B ©1999 Fairchild Semiconductor Corporation BC546/547/548/549/550 NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild ... Original
datasheet

3 pages,
68.78 Kb

ic 549 BC549 NPN transistor download datasheet information of BC548 NPN transistor bc548 transistor b 548 BC546..547 transistor bc547 specifications TRANSISTOR C 547 B BC550 data of transistor 547 transistor C 548 B Amplifier with transistor BC549 BC546/547/548/549/550 BC546 BC546/547/548/549/550 abstract
datasheet frame
Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 4N33 series of optoisolators has a silicon npn Planar photo-Darlington transistor coupled to a GaAs , to 10% of peak value. 'Indicates JEDEC: Registered Data. , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output ... OCR Scan
datasheet

4 pages,
115.18 Kb

diagram DARLINGTON 4N28 4N29 4N30 4N31 4N32 4N33 4n33 and 4n35 4N35 4N36 4N27W datasheet abstract
datasheet frame
Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd ... OCR Scan
datasheet

4 pages,
109.84 Kb

4N26 4N27 4N27W 4N28 340 opto isolator 4N31 4N35 4N36 ic 4n26 opto isolator 4n26 opto 4n25 4n26 opto isolator 4N25 4n27 opto isolator 4N2S datasheet abstract
datasheet frame
Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd ... OCR Scan
datasheet

4 pages,
116.62 Kb

ic 4n35 4N37 4N36 4N35 4n33 and 4n35 4N31 4N28 4N27W datasheet abstract
datasheet frame
Abstract: gate of the P-Channel MOSFET is at low voltage level, the transistor is turned on to allow current to , level, the transistor is turned off and the MAX II device is in powered-down state. Because of the 1-k , automatically reads the data from the counter and writes the data into the UFM. Upon completion of the task , reads back the data before the device powers down again. The controller then reloads the registers of , significant bit (MSB) signal is used to trigger the process of saving the counter data into the UFM and ... Original
datasheet

8 pages,
199.32 Kb

most 450 AN-547-1 547 MOSFET AN-547-1 abstract
datasheet frame
Abstract: kil of resistance under this condition. These features make the HI-546/883 HI-546/883 and HI-547/883 ideal for , CURRENT DENSITY: 1.4 x 1 , January 1989 HI-546/883 HI-546/883 H1-547/883 Single 16/Differential 8 Channel CMOS Analog Multiplexers , and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • No Channel Interaction During , ).1-0/« • Power Dissipation (Max.).45mW Applications • Data ... OCR Scan
datasheet

11 pages,
366.2 Kb

VT 546 lcc 28 socket k 547 HI4-547 HI1-546 TRANSISTOR 547 HI1-546/883 datasheet abstract
datasheet frame
Abstract: HI-546/547 HI-546/547 Schematic Diagrams (continued) V' Die Characteristics Transistor C o u , ). 500ns · Standby Power (Typical).7.5mW Description The H I-546 I-546 and H I-547 , of other channels. Active protection circuitry assures that signal fidelity is maintained even under , protected from short circuiting should multiplexer supply loss occur; each input presents 1kO of resistance under this condition. These features make the HI-546 HI-546 and HI-547 ideal for use in systems where the ... OCR Scan
datasheet

6 pages,
194.06 Kb

HI546 hi4p547 HI3-0546-5 HI-546 547 8 pin datasheet abstract
datasheet frame
Abstract: @Vce V Data Sheet Page No. Device No. 2.5 2.5 1.5 50 0.5 2.0 50 5-47 4N25 2.5 2.5 1.5 50 0.5 2.0 , 1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min Current , 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd ... OCR Scan
datasheet

3 pages,
80.96 Kb

4N37 4N36 4N35 4n33 and 4n35 4N31 4N28 4N27W datasheet abstract
datasheet frame
Abstract: 1-GHz Oscillator 400 25 4.0 322 File No. 547 40909 PERFORMANCE DATA FREQUENCY (f)-GHI 92CS- 92CS- 19796 , 6-Schematic diagram of basic oscii/ator circuit. 323 40909 File No. 547 UNIVERSAL BREADBOARD OSCILLATOR , File No. 547 DQQB//0 RF Power Transistors Solid State Division 40909 2-W, 2-GHz Emitter-Ballasted Silicon N-P-N Overlay Transistor For Microwave Fundamental-Frequency Oscillators Features: - , PACKAGE RCA-40909 RCA-40909* is an epitaxial silicon n-p-n transistor with overlay multiple-emitter-site ... OCR Scan
datasheet

4 pages,
192.86 Kb

rca409 colpitts oscillator 547 relay ic 100 watts transistor s-band rca transistor colpitts oscillator construction RCA 444 1GHz Oscillator datasheet abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
LINE INTERFACE December 1998 PRELIMINARY DATA . HOOK SWITCH DRIVER . RING INDICATOR . off-hook or the CLID external transistor switch. If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hook state, ST952 ST952 ST952 ST952 DC voltage, 4V at a 20mA line current, allows to interface with most of public networks in the world. The return loss is externally adjustable to real or complex imped ance. In case of a wrong connection in
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5958-v3.htm
STMicroelectronics 25/05/2000 17.33 Kb HTM 5958-v3.htm
ST952 ST952 ST952 ST952 D.A.A. LINE INTERFACE December 1998 PRELIMINARY DATA . HOOK SWITCH DRIVER . RING INDICATOR or the CLID external transistor switch. If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hook state, ST952 ST952 ST952 ST952 DC voltage, 4V at a 20mA line current, allows to interface with most of public networks in the world. The return loss is externally adjustable to real or complex imped ance. In case of a wrong connection in a digital phone line
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5958.htm
STMicroelectronics 20/10/2000 19.1 Kb HTM 5958.htm
external Q5 transistor, in which the main part of the line current goes through to meet the line DC, V = f and Raw Text Format ST952 ST952 ST952 ST952 D.A.A. LINE INTERFACE December 1998 PRELIMINARY DATA . HOOK SWITCH or the CLID external transistor switch. If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hook state, ST952 ST952 ST952 ST952 DC voltage, 4V at a 20mA line current, allows to interface with most of public networks in the world. The return loss is
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5958-v2.htm
STMicroelectronics 14/06/1999 15.52 Kb HTM 5958-v2.htm
external Q5 transistor, in which the main part of the line current goes through to meet the line DC, V = f and Raw Text Format ST952 ST952 ST952 ST952 D.A.A. LINE INTERFACE December 1998 PRELIMINARY DATA . HOOK SWITCH or the CLID external transistor switch. If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is drawn from the line. In off-hook state, ST952 ST952 ST952 ST952 DC voltage, 4V at a 20mA line current, allows to interface with most of public networks in the world. The return loss is
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5958-v1.htm
STMicroelectronics 02/04/1999 15.55 Kb HTM 5958-v1.htm
MOS TRANSISTOR STH15NA50FI STH15NA50FI STH15NA50FI STH15NA50FI STW15NA50 STW15NA50 STW15NA50 STW15NA50 Document Format Size Document CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL R DS(on) = 0.33 W n + 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 o C n LOW This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized ISOWATT218 ISOWATT218 ISOWATT218 ISOWATT218 1 2 3 1 2 3 TO-247 1/11 THERMAL DATA TO-218/TO-247 ISOWATT218 ISOWATT218 ISOWATT218 ISOWATT218 R thj-case Thermal
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3539.htm
STMicroelectronics 20/10/2000 11.84 Kb HTM 3539.htm
STH15NA50FI STH15NA50FI STH15NA50FI STH15NA50FI STW15NA50 STW15NA50 STW15NA50 STW15NA50 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Document ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL R DS(on) = 0.33 W n + 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 o C n LOW INTRINSIC CAPACITANCES n GATE This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell area 1 2 3 TO-218 ISOWATT218 ISOWATT218 ISOWATT218 ISOWATT218 1 2 3 1 2 3 TO-247 1/11 THERMAL DATA TO-218/TO-247
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3539-v1.htm
STMicroelectronics 02/04/1999 9.34 Kb HTM 3539-v1.htm
STH15NA50FI STH15NA50FI STH15NA50FI STH15NA50FI STW15NA50 STW15NA50 STW15NA50 STW15NA50 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Document ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL R DS(on) = 0.33 W n + 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 o C n LOW INTRINSIC CAPACITANCES n GATE This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell area 1 2 3 TO-218 ISOWATT218 ISOWATT218 ISOWATT218 ISOWATT218 1 2 3 1 2 3 TO-247 1/11 THERMAL DATA TO-218/TO-247
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3539-v2.htm
STMicroelectronics 14/06/1999 9.3 Kb HTM 3539-v2.htm
THRESHOLD POWER MOS TRANSISTOR STW12NA50 STW12NA50 STW12NA50 STW12NA50 Document Format Size Document ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL R DS(on) = 0.5 W n + 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 o C n LOW INTRINSIC CAPACITANCES This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized ( w ) Pulse width limited by safe operating area 1/9 THERMAL DATA R thj-case R thj-amb R
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3647.htm
STMicroelectronics 20/10/2000 10.29 Kb HTM 3647.htm
STW12NA50 STW12NA50 STW12NA50 STW12NA50 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Document CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL R DS(on) = 0.5 W n + 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 o C n LOW INTRINSIC This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell operating area 1/9 THERMAL DATA R thj-case R thj-amb R thj-amb T l Thermal Resistance Junction-case
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3647-v1.htm
STMicroelectronics 02/04/1999 7.92 Kb HTM 3647-v1.htm
STW12NA50 STW12NA50 STW12NA50 STW12NA50 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Document CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL R DS(on) = 0.5 W n + 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 o C n LOW INTRINSIC This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell operating area 1/9 THERMAL DATA R thj-case R thj-amb R thj-amb T l Thermal Resistance Junction-case
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3647-v2.htm
STMicroelectronics 14/06/1999 7.88 Kb HTM 3647-v2.htm