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data transistor 2n3055

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2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , Transistor Device Data *2N3055/D* 2N3055/D Motorola , MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is
Motorola
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2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055/MJ2955 2N3055/D

RCA-2N3055

Abstract: rca 2n3055 operating area TERMINAL DESIGNATIONS The RCA-2N3055 silicon n-p-n transistor intended for a wide variety of madium-voltage, high-current applications. Typical applications tor this transistor include , ~ T -3 3 -/3 General-Purpose Power Transistors_ 2N3055 File Number 1699 General-Purpose Power Transistor Broadly Applicable Devices for Industrial and Commercial Use Features: * High , .-65 ~ 200°C 'In accordance w ith JEDEC registration data. h Qï ÎM r |3 fl7 S Q f ll 0 0 1 7
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RCA-2N3055 KCS-27516 rca 2n3055 2n3055 voltage regulator 2N3055 typical applications 2N3055 curve 2N3055 series voltage regulator TQ-204AA/TO-3

2N3055

Abstract: 2n3055 motorola overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , Transistor Device Data *2N3055/D* 2N3055/D Motorola , MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is
Motorola
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2n3055 circuit 2N3055 power circuit 2N3055-D 2n3055 pnp pin out TRANSISTOR 2n3055 2n3055 application

rca 2n3055

Abstract: SN3055 Power Transistors _._ » 2N3055 File Number 1699 General-Purpose Power Transistor Broadly , DESIGNATIONS The RCA-2N3055 silicon n-p-n transistor Intended for a wide variety of medium-voltage, high-current applications. Typical applications for this transistor include power-switching circuits, audio , 'ž - 200°C 'in accordance with JEDEC registration data. h ôï DtT|3fl7saai 0017353 4 \ 3875081 G , CHARACTERISTICS, At Case Temperature (Tc) = 25°C Unlet! Otherwlie Specllled 2N3055 CHARACTERISTIC TEST
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SN3055 2N3055 RCA 2n3055 collector characteristic curve power transistor 2n3055 RCA 2N3055 transistor 2N3055 transistor 92CS-27516 0D17354

2N3055 power amplifier circuit

Abstract: 2n3055 transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is , applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY
ON Semiconductor
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2N3055 MEXICO 2N3055 MJ2955 mj2955 transistor 2N3055 JAPAN MJ2955 mexico 2N3055-1 204AA

2n3055

Abstract: 2N3055 NPN Transistor 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã , . (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 application note

2N3055

Abstract: DC variable power with 2n3055 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO , © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number: 2N3055/D 2N3055, MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ
ON Semiconductor
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DC variable power with 2n3055 2n3055 amplifier 2n3055h mj2955 safe operating area data transistor 2n3055 Mj2955 power transistor

2N3055 power amplifier circuit

Abstract: 2n3055 motorola Operating Area 2 Motorola Bipolar Power Transistor Device Data 2N3055 MJ2955 NPN PNP MJ2955 , ) Figure 5. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Com plem entary , ., the transistor must not be subjected to greater dissipa tion than the curves indicate. The data of , 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF
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TRANSISTOR 2n3055 TRANSISTOR MJ2955 J2955

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 µs 250 µs 2N3055, MJ2955
ON Semiconductor
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2n3055 equal value of 2n3055 Application Notes 2n3055 Amplifier

2n3055 motorola

Abstract: L 3055 motorola ) Figure 2. Active Region Safe Operating Area 2 Motorola Bipolar Power Transistor Device Data , , COLLECTOR CURRENT (AMP) Figure 5. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by2N3055/D C om plem entary , recommended choices tor future use and best overall value. © Motorola, Inc. 1995 (M) MOTOROLA 2N3055 , id th < 300 ills , D uty C y c le < 2.0% . 2N3055, MJ2955 There are two limitations on the
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L 3055 motorola motorola 2n3055 motorola power transistor 2N3055 J 2N3055

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055, MJ2955 , handling ability of a transistor: IC, Collector Current (AMP) average junction temperature and second
Multicomp
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2n3055 malaysia 2n3055 IC npn 2n3055 pnp transistor 2N3055 2n3055 pin 2N3055 equivalent transistor NUMBER

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram DC variable power with 2n3055 datasheet mj2955 TO-3 2N3055 transistor equivalent 22N3055
Abstract: . Complementary Silicon Power Transistors 2N3055 * PNP MJ2955 * NPN SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data , ' Voltages Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N , © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 Preferred devices are , , Tai Po, N.T., Hong Kong. 852â'"26629298 4 ◠Motorola Bipolar Power Transistor Device Data Motorola
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2n3055 transistor

Abstract: 2N3055 2N3055 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended , Collector Current A 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA , Current (V BE = -1.5V) Min. V 50 75 145 250 70 1.6 2.5 MHz 2.87 A 2N3055 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00
STMicroelectronics
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P003F transistor 1547 b 2N3055 TO-3 2N3055 schematic diagram NPN Transistor 2n3055 2N3055 silicon

2n3055

Abstract: 2N3055 curve mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , ://www.bocasemi.com 2N3055 NPN / MJ29S5 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , ) 15 120 There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation
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2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package , Industries, LLC, 2005 1 May 5, 2005 - Rev. 5 Publication Order Number: 2N3055/D 2N3055(NPN , ) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle
ON Semiconductor
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2n3055 pin out diagram

2n3055

Abstract: 2N3055G 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on the power handling ability of a transistor: average junction temperature and
ON Semiconductor
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2N30

2n3055 malaysia

Abstract: 2N3055 NPN Transistor 2N3055 SILICON NPN TRANSISTOR . STM PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended tor power , 2/4 2N3055 TO-3 MECHANICAL DATA mm DIM. MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 , Junction T em perature V CEO V ebo lc Ib Plot Tstg Tj °c °c 1/4 June 1998 2N3055 THERMAL DATA R lh ]-c T herm al R esistance Junction-case Max 1.5 °C /W ELECTRICAL
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2N3055 ST transistor B 892 2N3055 specification t 2N3055 ST 2N3055

MJ2955 TRANSISTOR

Abstract: pnp transistor 2N3055 A * V cE (*t) * NPN 2N3055 PNP MJ2955 11 v @ 'c = 4 0 A - 'b = 400 , 17.30 4.36 11.18 2N3055 NPN / MJ2955 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise , 2.0% (2 ) f T = | K » | * f tort MHz 2.5 15 120 2N3055.MJ2955 AC TIVE REG ION SAFE O PERATING AREA(SOA) There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate Ic-V C e limits of the transistor that
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2n3055 npn power transistor 2N3055M

2n3055

Abstract: 2N3055M NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V , 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3055 NPN / MJ29S5 , are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than
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2N3055MJ
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