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d882 to-92

Catalog Datasheet MFG & Type PDF Document Tags

d882 to-92

Abstract: TRANSISTOR br D882 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) Symbol Parameter Value 3.BASE Units VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V , characteristics D882 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
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d882 to-92

Abstract: D882 -TO-92 CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn D882 TRANSISTOR (NPN) TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value 3.BASE Units VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 , characteristics D882 HAROM
HAROM
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D882 TRANSISTOR

Abstract: D882 D882 D882 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25) 3. BASE Collector current ICM: 3 A Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 40
WEJ Electronic
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d882 equivalent

Abstract: md1724 I t ® M D882 XADSL G .Lie nel t a n V.90 M odem Chi et d ps Over ew vi The Intel® MD882X modem chipset delivers simultaneous G.Lite and V.90 operation. Dual functionality gives the user the , m a a I t ® M D882 X nel provide full-duplex speakerphone capability. The MD882X also , D882 X u es s s s s s s s MD882X chipset · Digital Signal Processor · ADSL SAFE and Line , .42bis and MNP 5 CTR-21 compliant Future software upgradeable to V.92/V.44 Pr odu ct Pa ck a g e
Intel
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d882 equivalent md1724 md8820 V32B D882 to 92 intel microsoft 500MH
Abstract: TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25â"ƒ) 3. BASE Collector current 3 A ICM: Collector-base voltage V V(BR)CBO: 40 Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55â"ƒ to +150â"ƒ ELECTRICAL CHARACTERISTICS (Tamb=25â"ƒ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown Bytes
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ASTM D3363

Abstract: d1922 23 160 % 92 91 90 0.8 0.9 1.2 40 40 40 * * * 92 40 , Tensile Strength ASTM D882 psi @ Yield 8,500 8,500 8,500 Ultimize 8,800 8,800
Proud Industries
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HP92S HP40S D1003 D1925 ASTM D3363 d1922 D882 ASTM-D-1003 HP12S
Abstract: . Tensile Elongation Break Strength at break strength ASTM ASTM ASTM D882-95a D882-95a D882-95a N 3M Renewable Energy
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D-5209 CH-KO106129 EN12600 EN356

D882 TRANSISTOR

Abstract: transistor D882 datasheet D882 YOUDA TRANSISTOR Si NPN TRANSISTOR D882 DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity PIN CONFIGURATIONS PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tamb=25 ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25 Collector Dissipation PCM Tamb=25 DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg
WuXi YouDa Electronics
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D882 TRANSISTOR transistor D882 datasheet D882 p TRANSISTOR D882 D882 TRANSISTOR PIN D882 Q

D882 TRANSISTOR

Abstract: TRANSISTOR br D882 D882 Transistor(NPN) 1. BASE 2. COLLECTOR 3 .EMITTER TO-252-2L Features Power dissipation Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature , 200-400 D882 Transistor(NPN) Typical characteristics -
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TRANSISTOR br D882 br d882 d882 npn transistor NPN TRANSISTOR D882 D882* transistor NPN D882 transistor

D882 p

Abstract: N E C D882 SCC 008 ASTM D-882 ASTM D-882 ASTM D-882 ASTM D-882 MIL-PRF-81705 Material Structure 4 mils
Static Control Components
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J-STD-033 N E C D882 JEDEC J-STD-033 h D882 MILPRF-81705 JSTD-033 MIL-PRF81705 1161-B

D882

Abstract: transistor D882 datasheet SEMICONDUCTOR KTD882 MARKING SPECIFICATION TO-126 PACKAGE 1. Marking method Laser Marking 2. Marking K D882 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name D882 KTD882 3 hFE Grade Y O,Y,GR 4 Lot No. 016 0 Revision No : 00 0 ~ 9 : 2000~2009 16 00.12.27 Year Week 16 : 16th Week 1/1 KEC
KEC
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d882Y K D882 Y D882 SPECIFICATION D882-y D882 Y datasheet d882

organic compost

Abstract: d882 kpsi D882 D882 Tensile Modulus MD TD MD TD 480 kpsi 560 kpsi 160% 100% D882 D882 D882 D882 MD TD 15 g/mil 13 g/mil D1922 D1922 Startup and Shutdown Ingeo 4043D is not
NatureWorks
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organic compost 4042D NWPKG072610V1
Abstract: Card Holder, 4â' x 2â' 47511 101C-3005 D-882 D882 D-3420 D-1938 D-882A D Desco Industries
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M4046 EIA-541 MIL-B-81705C D-1894

d882 051

Abstract: DR-25 Weight g/m 4 4 6 10 15 20 35 54 67 92 Ordering description DR-25-TW-3/32-0 DR-25-TW-1/8-0 DR , 120°C to IEC 216 50 Mpa (max) to ASTM D882 8 MV/m (min) to IEC 243 ASTM D876 15s (max) As DR25 10 MPa
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DR-25 d882 051 TYCO DR-25 Raychem DR-25 RK-6008 RK 6008 DR-25-TW DR-25-TW-3/16-0 DR-25-TW-1/4-0 DR-25-TW-3/8-0 DR-25-TW-1/2-0

D882 B772

Abstract: b772 p | R17 10K Q17 H1815 Q20 D882 Q6 8050 104 Q4 8050 R14 10K R19 1K R2 330 2.2K , 1K R21 11 27MHz Q7 H1815 Q3 8550 Q14 D882 104 Q12 H1815 R25 220 C10 104 Q5 M3 8550 Q10 D882 Q9 B772 Q13 B772 M1 330 C12 220uF R1 10 PT0097(11 , 220 R18 10K Q18 H1815 104 Q16 D882 Q15 Q19 B772 M2 B772 R27 220 R24 1K , | R17 10K Q17 H1815 Q20 D882 C9 R10 470P 2.2M 18 19 F3 F2 Forward F4
Pericom Technology
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PT8A9702 D882 B772 b772 p D882 CIRCUIT DIAGRAM N E C B772 H B772 TOY REMOTE tx6 rx6 PT8A9702/973/973L/974/974L PT8A973/974/973L/974L PT8A9702P PT8A973/973L/PT8A974/974L HD271

ASTM d882

Abstract: ASTM A 527 m Units (SI) Value Mechanical Tensile Strength @ Yield ASTM D882 psi 10000 ISO 527 M Pa 70 Ultimate ASTM D882 psi 8700 ISO 527 M Pa 60 Tensile Modulus ASTM D882 psi 319000 ISO 527 M Pa 2200 Tensile Elongation at Break ASTM D882 % 100-160 ISO 527 % 100-155 Gardner Impact Strength at 0.03 in
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OCR Scan
FR25A ASTM d882 ASTM A 527 m astm D150 J D882 602-50 ASTM d792 FR700 D3029 D1004 D3763

D882

Abstract: D1894 : Tear Propagation: Modulus of Elasticity: Coefficient of Friction: 101C-3005 D-882 D882 D
Desco Industries
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D1894 D1938 7449 D882A 3MIL D882 D882 D-257

D882 TRANSISTOR

Abstract: D882 D882 0. 5 1¡ À. 03 0 5¡ ã 5. 50¡ À. 10 0 TRANSISTOR (NPN) 2 . 30¡ À. 05 0 5. 3 0¡ À. 05 0 14. 70 D882 6. 5 0¡ À. 10 0 TO-251 TO-252-2 FEATURES 5¡ ã 5¡ ã 7. 70 0. 80¡ À. 0 5 0 0. 6 0¡ À. 0 5 0 1. Power dissipation 2. 3 0¡ À. 05 0 2. 3 0¡ À. 0 5 0 1 . 20 0. 51 ¡ À. 03 0 123 2. W (Tamb=25) COLLECTOR 6. 50¡ À. 15 0 2. 30¡ À. 10 0 5. 30¡ À. 10 0 0. 51¡ À. 05 0 5¡ ã EMITTER 0 5. 50¡ À. 10 1. 20
WEJ Electronic
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D882 datasheet D882 02

07454

Abstract: -1238 per ASTM D-1505 per ASTM D-1709 per ASTM D-1894 per ASTM D-882 per ASTM D-882 Shop Travelers
Desco Industries
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07454 STM11 D-1238 2002/95/EC

d882

Abstract: TRANSISTOR br D882 D882(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 10.60 0 11.00 0 3.000 3.200 7.400 7.800 2.500 1.100 2.900 1.500 3.900 4.100 0.000 0.300 3 2 Features 1 2.100 2.300 1.170 1.370 15.30 0 15.70 0 Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage , D882(NPN) TO-126 Transistor -
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br d882 to-126 d882 npn TO-126 D882 d882 power transistor d882* npn transistor to-126 transistor
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