500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
BCV-FEC (1623721-1) TE Connectivity (1623721-1) SUPPORT PILLARS visit TE Connectivity
1623721-1 TE Connectivity Ltd SUPPORT PILLARS visit Digikey Buy
BCV-FEC TE Connectivity Ltd SUPPORT PILLARS visit Digikey Buy

cu pillar

Catalog Datasheet MFG & Type PDF Document Tags

cu pillar

Abstract: Amkor Technology bump, assembly and test solution Sn/Ag Cap Cu Pillar www.amkor.com visit amkor technology , Rules FEATURE Cu Pillar Diameter (D) Total Height (TH) DIMENSION 20 - 50 µm 30 - 45 µm Pad Design , chip Fine Pitch Copper Pillar Flip Chip Electromigration Reliability Comparison of Cu Pillar with , life for Cu pillar over SnAg bump for the same current/temperature condition and similar bump/UBM geometry. No failure was observed in Cu Pillar Bump even after 8000 hours of testing at the same condition
Amkor Technology
Original

cu pillar

Abstract: pillar flip chip technology Fine Pitch Copper Pillar Flip Chip Sn/Ag Cap Cu Pillar www.amkor.com , 106A 06'10 Copper Pillar Bump Design Rules FEATURE Cu Pillar Diameter (D) Total Height (TH , Pillar Flip Chip Electromigration Reliability Comparison of Cu Pillar with SnAg Bump Test Condition: 0.7Amps Current, 135 ° C Temperature The above plot shows improvement in life for Cu pillar over SnAg , in Cu Pillar Bump even after 8000 hours of testing at the same condition. SQB Results Test MSL3
Amkor Technology
Original

cu pillar

Abstract: Flip Chip Substrate bumping or area array bumping, with either solder or Cu pillar bump technology. The fcCSP is based on , ·Cu Pillar flip chip interconnect for finer bond pad pitches ·Available in 0.4 mm - 1.0 mm BGA ball , / Eutectic, Cu Pillar Encapsulant Epoxy mold compound Solder balls Eutectic, Pb-Free Test Services
Amkor Technology
Original

E700G

Abstract: , with either solder or Cu pillar bump technology. The fcCSP is based on Amkor's proprietary ChipArray , information. â'¢ Cu pillar flip chip interconnect for fine bond pitches down to 30 µm/60 µm staggered , ) â'" In-line: 80 µm â'" Array: 130 µm â'¢ Bump pitch (Cu Pillar) â'" In-line: 30/60 µm , '" ELC4785GSB, ELC4785THB, ELC4785THG â'¢ Bump: Pb-Free, Eutectic, Cu Pillar â'¢ Encapsulant: Epoxy mold
-
Original
E700G DS577G

HL832N

Abstract: FCCSP area array bumping, with either solder or Cu pillar bump technology. The fcCSP is based on Amkor , peripheral, 150 µm min. for area array ·Cu Pillar flip chip interconnect for finer bond pad pitches , substrate HL832N, ELC4785, DS7409, e679, GT Bump Pb-Free / Eutectic, Cu Pillar Encapsulant Epoxy mold
Amkor Technology
Original
FCCSP HL832 Amkor CSP mold compound amkor cabga thermal resistance flip chip bga 0,8 mm cu pillar

amkor flip

Abstract: 3D-IC material sets TSV Based Package Architectures Si Interposer TSVs Pb Free FC Bumps Cu Pillar , Advanced wafer finishing technology capabilities: 200-300 mm wafer support system (WSS) Copper Pillar
Amkor Technology
Original
amkor flip 3D-IC 3D IC TSV 3D IC 50um silicon die attach amkor Cu pillar

IPC-9701

Abstract: Amkor mold compound , ultra low alpha Eutectic, Lead Free, Cu Pillar Eutectic, Lead Free Please contact the Test Product
Amkor Technology
Original
IPC-9701 Amkor mold compound coreless substrate MS-034

HL832N

Abstract: ELC4785 Encapsulant Transfer molded epoxy Underfill Dispensed Bumps (F/C die) Pb-free, Eutectic, Cu Pillar
Amkor Technology
Original
E679 MO-298 MO-192 MO-195 Amkor Technology DS820B

DS7409HGB

Abstract: DS7409HG â'" Top die Non-conductive epoxy, film â'¢ Wire type Au, Cu or Ag â'¢ Encapsulant Transfer molded epoxy â'¢ Underfill Dispensed â'¢ Bumps (F/C die) Pb-free, Eutectic, Cu Pillar â'¢ Solder
-
Original
DS7409HGB DS7409HG DS-7409HG HL832 nx-a DS820C

copper pillar solder

Abstract: using TriQuintâ'™s proven 0.13 µm pHEMT process and front-side Cu / Sn pillar technology for reduced , +0.18 V Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 2.24 x 1.27 , levels. 3/ For this flip-chip die, the baseplate is a plane between the Cu/Sn pillars and the test , Chip edge to pillar dimensions are shown to center of pillar Pillar #4,12,18-25 DC Ground 0.075 Ø Pillar #5 Vg4 0.075 Ø Pillar #1, 3, 9, 11 RF CPW Ground 0.075 Ø Pillar
TriQuint Semiconductor
Original
copper pillar solder TGA4705-FC 2009E

77GHz Radar

Abstract: AT77 TriQuint's proven 0.13 µm pHEMT process and front-side Cu / Sn pillar technology for simplified assembly , um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 1.86 x 1.37 x 0.38 mm Measured Performance , maintained at the lowest possible levels. For this flip-chip die, the baseplate is a plane between the Cu/Sn , /- 0.050 Chip edge to pillar dimensions are shown to center of pillar Pillar # 1 Pillar # 9 Pillar # 4 Pillar # 5 Pillar # 6 Pillar # 11 Pillar # 12 Pillar # 13 Pillar # 2, 8, 10, 15 Pillar # 3, 7, 14
TriQuint Semiconductor
Original
77GHz Radar AT77 E-band mmic TGA4706-FC TGA4706FC
Abstract: designed using TriQuint's proven 0.13 µm pHEMT process and front-side Cu / Sn pillar technology for , with front-side Cu/Sn pillars Chip Dimensions: 3.38 x 1.37 x 0.38 mm Primary Applications · · , baseplate is a plane between the Cu/Sn pillars and the test board. For the TGC4704-FC, the critical pillars , Thickness: 0.380 Die x, y size tolerance +/- 0.050 Chip edge to pillar dimensions are shown to center of pillar Pillar #22 Pillar #10 Pillar #13 Pillar #9, 11, 12, 14, 21, 23 Pillar #20 Pillar #18 Pillar #17 TriQuint Semiconductor
Original

cu pillar

Abstract: automotive radar schematic diagram 's proven 0.13 µm pHEMT process and front-side Cu / Sn pillar technology for reduced source inductance , Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 2.24 x 1.27 x 0.38 mm , the Cu/Sn pillars and the test board. For the TGA4705-FC, the critical pillars for thermal power , size tolerance: +/- 0.050 Chip edge to pillar dimensions are shown to center of pillar Pillar #4,12,18-25 DC Ground 0.075 Ø Pillar #5 Vg4 0.075 Ø Pillar #1, 3, 9, 11 RF CPW Ground
TriQuint Semiconductor
Original
automotive radar schematic diagram

TGC4703-FC

Abstract: Cu / Sn pillar technology for simplified assembly and low interconnect inductance. Die reliability , front-side Cu/Sn pillars Chip Dimensions: 1.16 x 2.85 x 0.38 mm The TriQuint TGC4703-FC is a flip-chip , flip-chip die, the baseplate is a plane between the Cu/Sn pillars and the test board. For the TGC4703-FC , Units: millimeters Thickness: 0.380 Die x,y size tolerance: +/- 0.050 Chip edge to pillar dimensions are shown to center of pillar Pillar #22 RF In 0.075 Ø Pillar #7 Vd1 0.075 Ø
TriQuint Semiconductor
Original

76-77GHz

Abstract: E-band mmic : 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 1.86 x 1.37 x 0.38 mm · · , band. The TGA4706FC is designed using TriQuint's proven 0.13 µm pHEMT process and front-side Cu / Sn pillar technology for simplified assembly and low interconnect inductance. Die reliability is enhanced , tolerance: +/- 0.050 Chip edge to pillar dimensions are shown to center of pillar Pillar # 1 RF IN 0.075 Ø Pillar # 9 RF OUT 0.075 Ø Pillar # 4 Vd1 0.075 Ø Pillar # 5 Vd2 0.075
TriQuint Semiconductor
Original
76-77GHz

cu pillar

Abstract: pillar µm pHEMT process and front-side Cu / Sn pillar technology for reduced source inductance and superior , Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 2.24 x 1.27 x 0.38 mm Measured , maintained at the lowest possible levels. For this flip-chip die, the baseplate is a plane between the Cu/Sn , Units: millimeters Thickness: 0.380 Die x,y size tolerance: +/- 0.050 Chip edge to pillar dimensions are shown to center of pillar Pillar #4,12,18-25 Pillar #1, 3, 9, 11 Pillar #2 Pillar #10 Pillar #8 Pillar
TriQuint Semiconductor
Original
pillar
Abstract: designed using TriQuint's proven 0.13 µm pHEMT process and front-side Cu / Sn pillar technology for reduced , Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 2.24 x 1.27 x 0.38 mm Measured , possible levels. For this flip-chip die, the baseplate is a plane between the Cu/Sn pillars and the test , : 0.380 Die x,y size tolerance: +/- 0.050 Chip edge to pillar dimensions are shown to center of pillar Pillar #4,12,18-25 Pillar #1, 3, 9, 11 Pillar #2 Pillar #10 Pillar #8 Pillar #7 Pillar #6 DC Ground RF TriQuint Semiconductor
Original
Abstract: designed using TriQuintâ'™s proven 0.13 µm pHEMT process and front-side Cu / Sn pillar technology for , Typical Technology: 0.13 um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 3.38 x 1.37 x 0.38 mm , possible levels. 3/ For this flip-chip die, the baseplate is a plane between the Cu/Sn pillars and , pillar dimensions are shown to center of pillar Pillar #22 RF In 0.075 Ø Pillar #10 RF Out1 (Main) 0.075 Ø Pillar #13 RF Out2 (Coupled) RF CPW Ground Pillar #9, 11, 12, 14, 21 TriQuint Semiconductor
Original

pillar

Abstract: process and front-side Cu / Sn pillar technology for simplified assembly and low interconnect inductance , front-side Cu/Sn pillars Chip Dimensions: 1.16 x 2.85 x 0.38 mm Measured Performance Bias conditions: Vd , between the Cu/Sn pillars and the test board. For the TGC4703-FC, the critical pillars for thermal power , size tolerance: +/- 0.050 Chip edge to pillar dimensions are shown to center of pillar 0.075 Ø 0.075 Ø 0.075 Ø 0.075 Ø 0.075 Ø 0.075 Ø 0.075 Ø 0.075 Ø 0.075 Ø 0.075 Ø Pillar #22 Pillar #11 Pillar #10, 12
TriQuint Semiconductor
Original
Abstract: µm pHEMT process and front-side Cu / Sn pillar technology for simplified assembly and low , um pHEMT with front-side Cu/Sn pillars Chip Dimensions: 1.16 x 2.85 x 0.38 mm The TriQuint , the Cu/Sn pillars and the test board. For the TGC4703-FC, the critical pillars for thermal power , 0.050 Chip edge to pillar dimensions are shown to center of pillar Pillar #22 RF In 0.075 Ø Pillar #7 Vd1 0.075 Ø Pillar #11 RF Out 0.075 Ø Pillar #3 Vd2a 0.075 à TriQuint Semiconductor
Original
Showing first 20 results.