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3613C470K TE Connectivity Ltd 1 ELEMENT, 47uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP, 1812, ROHS COMPLIANT visit Digikey Buy
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cree c470

Catalog Datasheet MFG & Type PDF Document Tags

C470-5C14

Abstract: silicon carbide LED CREE RESEARCH INC 4flE » â  25G4S7b DDÃDOn Slfl «CRE RESEARCH- INO I?» IjMtfar ta SÃHeon Carbide Soöd^SteteTechnotogy Silicon Carbide Blue LED Product Line Description Cree's C470 product , output of 13|llW@ 20 mA. The C470 series is available in a variety of standard LED packages as well as , printing and imaging systems. Cree's proprietary SiC material growth and processing technology assures , Temperature < 30 fiA 5 V -55°C - +100°C Characteristics C470-5C14 C470-5C34 C470-5D16 C470
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cree c470

Abstract: C470-5D36 Sifiewt Carbide $ o ö « ^ t^ T Description Cree's C470 product series consists of silicon carbide blue LEDs with a 470nm peak wavelength and a typical optical power output of 13|l iW@ 20 mA. The C470 series , CREE R E S E A R C H INC 4flE D 2 5 G 4 S 7 b 000001*1 Slfl « C R E Silicon Carbide , , colorimeters, blood and tissue analyzers) and digital color printing and imaging systems. Cree's proprietary , Storage Temperature < 30 pA 5V -55°C - +100°C C470-5C14 T 13 /4 Water Clear 16° 3.0 V 13 ¡J.W 13 mcd
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cree c470

Abstract: silicon carbide and Switch Backlighting â'¢ Circuit Board Status Indicators Description Cree's C470 series silicon , Characteristics at If = 20mA C470-5C18 C470-5D18 C470-5T18 I C470-3C18 C470-3D18 C470-3T18 Package T-l 3/4 T , lose clarity when operated at temperatures above 125°C. Cree only guarantees the above maximum ratings
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Blue Leds

Abstract: cree c470 Description Cree's C470 series silicon carbide blue LEDs have a typical power output of 24(iW (at 20mA) and , Radiant Flux Luminous Intensity Peak Wavelength Dominant Wavelength C470-5C18 T-l 3/4 Water Clear 16° 3.4V 24(xW 16 mcd 466nm 481nm C470-5D18 T-1 3/4 White Diffused 34° 3.4V 24|iW 4 mcd 466nm 481nm C470-5T18 T-1 3/4 Tinted Diffused 20° 3.4V 24(xW 5 mcd 466nm 481nm C470-3C18 C470-3D18 T , C470-3T18 T-1 Tinted Diffused 30° 3.4V 24fiW 4 mcd 466nm 481nm Maximum Ratings at TA = 25°C DC
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LN11WP24

Abstract: 226517 chip) 40mA lOpA 5V 150mW -40°C to +85°C 1mcd 30° 3.4V 466nm VT Blue LEDs C470 Series Description: Cree's C470 product series are silicon carbide blue LEDs with a 466nm peak wavelength and a typical , ) and digital color printing and imaging systems. Cree's proprietary SiC material growth and processing , : 'Cree's C470-MC18 sub-miniature blue LEDs are ideally suited for applications where the space for the LED
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CRGB-5D18 107CR-ND LN11WP23 P393-ND LN11WP24 LN142WP38 226517 rover P509-NO LN086WP38 P391-ND

silicon carbide

Abstract: silicon carbide LED CREE RESEARCH INC 4ÖE ] > E5G457b 0000051 17b CRErW/*¿( Silicon Carbide Blue LED C470-5D Description The C470-5D is a silicon carbide LED die with a 470nm peak wavelength and a typical optical power , , colorimeters, blood and tissue analyzers) and digital color printing and imaging systems. Cree's proprietary , - +100°C Electrical/Optical Characteristics C470-5D Minimum Forward Voltage @20mA Typical , 482.0 Maximum 3.3 V 50 mA 484.5 479.0 CREE RESEARCH INC MAE D 250457b 0000022 002 CRET-V
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silicon carbide silicon carbide LED cree c470 E5G457 C470-5D 919J361

silicon carbide LED

Abstract: Sic led Copyrighted By Its Respective Manufacturer CREE RESEARCH INC Silicon Carbide Blue LED C470-5D MflE , CREE RESEARCH INC 4Ã"E D â  E5D457b 00D00S1 17b â CREr-Vl^f R ESEARCH. INC 3?te Issderfti iSHcon Silicon Carbide Blue LED C470-5D Description The C470-5D is a silicon carbide LED die with a , color printing and imaging systems. Cree's proprietary SiC material growth and processing technology , C470-5D Ig Reverse Current < 30 ¡J.A VR Reverse Voltage 5 V T Storage Temperature -55°C - +100°C
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Sic led Cree SiC blue E5D457 000GQ22
Abstract: Lighting â'¢= Traffic Signals Description Cree's CB series of super bright LEDs are a new generation of solid state LED emitters which combine highly efficient InGaN materials with Cree's proprietary , connection. Cree's CB series chips are individually tested for conformity to optical and electrical , can also be used in high volume applications such as LCD backlighting. Cree's CB series chips are , 112 445 445 450 455 20 30 C470 3.5 4.0 2.0 2.5 10 220 468 Cree
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CXXX-CB290-E1000

cree c470

Abstract: cree package structure , typical Vf for C460, C470, and C527 is 3.2 V and at 20 mA. Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G·SiC , RazerThin® LEDs CxxxRT290-S0100 Cree's RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary G·SiC® substrate to deliver , are approximately 95 microns in height and require a low forward voltage. Cree's RazerThin series
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cree package structure C460 C460RT290-0101 C460RT290-0105 C460RT290-S0100 C470 RT290-S0100

cree c470

Abstract: bond wire gold Audio Product Display Lighting · Traffic Signals Class II ESD Rating Description Cree's CBTM series of SuperBrightTM LEDs combine highly efficient InGaN materials with Cree's proprietary SiC , . Cree's CB series chips are individually tested for conformity to optical and electrical specifications , also be used in high volume applications such as LCD backlighting. Cree's CB series chips are , µm Diameter CPR3U Rev. F © 1998-2002 Cree, Inc. All Rights Reserved. Anode (+) InGaN SiC
Cree
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OS4000 bond wire gold C450 Hysol os4000 C490 C505 C525
Abstract: '¢ Backlighting Description Cree's MB Plus series of MegaBright® Plus LEDs combine highly efficient InGaN materials with Cree's proprietary Gâ'¢SiC® substrate to deliver superior price/performance for , provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree's MB series chips are , backlighting. Cree's MB series chips are compatible with most radial and SMT LED assembly processes , Cree, Inc. All Rights Reserved. Anode (+) h = 250 µm Backside Metallization Cathode (- Cree
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MB290-S0100-P MB290-01 C460MB290-S0100-P C460MB290-0105 C460MB290-0106 C470MB290-S0100-P

OS400

Abstract: silicon carbide LED Traffic Signals · · Description Cree's MBTM series of MegaBrightTM LEDs combine highly efficient InGaN materials with Cree's proprietary SiC® substrate to deliver superior price/performance for high , provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree's MB series chips are , backlighting. Cree's MB series chips are compatible with most radial and SMT LED assembly processes , Backside Metallization Cathode (-) CPR3AP Rev. C © Cree, Inc. 2001-03 All Rights Reserved. G·SiC
Cree
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OS400 CXXX-MB290-S0100 460MB290-0103 460MB290-0101 470MB290-0107 470MB290-0104 470MB290-0101
Abstract: Description Cree's MegaBright® Plus series of LEDs combine highly efficient InGaN materials with Cree , wavelength and radiant flux bins. Cree's MBTM series chips are tested for conformity to optical and , used in high volume applications such as LCD backlighting. Cree's MB series chips are compatible with , ) CPR3BS Rev. B © 2003-2004 Cree, Inc. All Rights Reserved. G·SiC® Technology MegaBright® PlusTM LEDs , C460MB290-S0100-Plus C470 MB290-S0100-Plus 3.0 3.0 Max 3.8 3.8 Full Width Half Max (D, nm) Typ 21 22 Mechanical Cree
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C470MB290-0107 C470MB290-0108 C470MB290-0109
Abstract: Dashboard Lighting â'¢ White LEDs Description Cree's MBâ"¢ series of MegaBright LEDs combine highly efficient InGaN materials with Cree's proprietary SiC® substrate to deliver superior price/performance for , Die Kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree's MB , as LCD backlighting. Cree's MB series chips are compatible with most radial and SMT LED assembly , . E  Cree, Inc. 2001-2003 All Rights Reserved. Anode (+) h = 250 µm Backside Metallization Cree
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C470MB290-S 470MB290-0105 470MB290-0106 470MB290-0102 505MB290-0105 505MB290-0106

Hysol os4000

Abstract: cree c470 Description Cree's MBTM series of MegaBrightTM LEDs combine highly efficient InGaN materials with Cree , sorted into wavelength and radiant flux bins. Cree's MB series chips are individually tested for , and white LEDs, yet can also be used in high volume applications such as LCD backlighting. Cree's MB , (junction) 240 x 240 µm Gold Bond Pad 114 µm Diameter CPR3AP Rev. D © Cree, Inc. 2001-03 All Rights , Typ Typ C460MB290-S0100 3.5 3.8 10 458 26 30 C470 MB290-S0100 3.5 3.8
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hysol OS4000 epoxy hysol C527 C470MB290-S0100 S0100 505MB290-0103 505MB290-0104 C505MB290-S0100 505MB290-0101 505MB290-0102

C527

Abstract: led 465nm Description Cree's MBTM series of MegaBright LEDs combine highly efficient InGaN materials with Cree , sorted into wavelength and radiant flux bins. Cree's MB series chips are tested for conformity to , LEDs, yet can also be used in high volume applications such as LCD backlighting. Cree's MB series , x 240 µm Gold Bond Pad 114 µm Diameter CPR3AP Rev. F 2001-2003 Cree, Inc. All Rights Reserved , Typ Typ Typ C460MB290-S0100 3.0 3.5 3.8 10 458 26 30 C470 MB290-S0100
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led 465nm C460MB290-0101 C460MB290-0103 472nm C470MB290-0104 C470MB290-0105 C470MB290-0106 C470MB290-0101 C470MB290-0102 C505MB290-0103
Abstract: only, typical Vf for C460, C470, and C527 is 3.2 V and at 20 mA. Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Gâ'¢SiC and RazerThin are registered trademarks of Cree, Inc. 2 CPR3BU Rev. D Cree , die dits may contain any or all of the bins shown above, respectively. Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree Cree
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Abstract: reference only, typical Vf for C460, C470, and C527 is 3.2V and at 20mA. CPR3BU Rev. A © Cree, Inc , Cree's RazerThinâ"¢ LEDs are a new generation of solid state LED emitters which combine highly efficient InGaN materials with Cree's proprietary SiC substrate to deliver superior price performance for , in height and require a low forward voltage. Cree's RazerThin series chips have the ability to , Diameter CPR3BU Rev. A © Cree, Inc. 2003 All Rights Reserved. Anode (+) GaN h = 95 µm Cree
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Superbright LEDs

Abstract: OS4000 Description Cree's CB series of SuperBright LEDs are a new generation of solid-state LED emitters which combine highly efficient InGaN with Cree's proprietary SiC substrate to deliver the ultimate price , 3.7 1.0 1.3 10 100 455 455 460 465 26 30 C470 3.5 3.7 1.0 , the tolerance shown. 2 CPR3AU Rev. B Cree
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CXXX-CB230-E1000 Superbright LEDs
Abstract: LEDs Description Cree's UB series of ultra bright LEDs are a new generation of solid state LED emitters which combine highly efficient InGaN materials with Cree's proprietary SiC substrate to deliver , bond connection. Cree's UB series chips are individually tested for conformity to optical and , used in high volume applications such as LCD backlighting. Cree's UB series chips are compatible with , Min Typ Max Typ Typ Min Typ Max Typ Typ C470 3.7 4.2 3.4 5.0 Cree
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CXXX-UB290-E1000
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