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Part Manufacturer Description Datasheet BUY
HFA3096B Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012-AC, MS-012AC, 16 PIN visit Intersil
HFA3096B96 Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC visit Intersil
HCS151KMSR Intersil Corporation HC/UH SERIES, 8 LINE TO 1 LINE MULTIPLEXER, COMPLEMENTARY OUTPUT, CDFP16, CERAMIC, DFP-16 visit Intersil
ISL32272EIBZ-T Intersil Corporation IC,LINE DRIVER,4 DRIVER,BICMOS,SOP,16PIN,PLASTIC visit Intersil
HCS109HMSR Intersil Corporation HC/UH SERIES, DUAL POSITIVE EDGE TRIGGERED J-KBAR FLIP-FLOP, COMPLEMENTARY OUTPUT, UUC16, DIE-16 visit Intersil
HCTS74KMSR Intersil Corporation HCT SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, CDFP14, CERAMIC, DFP-14 visit Intersil

complementary npn-pnp

Catalog Datasheet MFG & Type PDF Document Tags

complementary npn-pnp

Abstract: SO-8 V 052 STS01DTP06 DUAL COMPLEMENTARY NPN-PNP BIPOLAR TRANSISTOR Preliminary Datasheet Figure 1: Package Table 1: General Features VCE(sat) n n n IC 0.35 V n hFE > 100 1A HIGH GAIN LOW VCE(sat) SIMPLIFIED CIRCUIT DESIGN REDUCED COMPONENT COUNT APPLICATION n PUSH-PULL OR TOTEM POLE CONFIGURATION n MOSFET AND IGBT GATE DRIVING n MOTOR, RELAY AND SOLENOID DRIVING DESCRIPTION The STS01DTP06 is a hybrid dual complementary NPN-PNP power bipolar transistor manufactured by
STMicroelectronics
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STS01DTP06T4 S01DTP06 complementary npn-pnp SO-8 V 052 so-8 marking STMicroelectronics STS01DTP

ic 7474

Abstract: complementary npn-pnp power transistors DTP206 COMPLEMENTARY NPN-PNP The DIONICS DTN and DTP series of high voltage transistors are specially , complementary specifications. Well-suited to a wide range of high voltage complementary symmetry applications , means of obtaining more efficient circuit performance with simplified complementary circuitry. *Pat
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DTN203 DTP204 DTP205 DTN206 DTP203 ic 7474 complementary npn-pnp power transistors 7474 ic of 7474 ic 7474 ic specifications DTN204 DTN205

complementary npn-pnp

Abstract: r = j SGS-THOMSON HQ©l@iLi(g71(s)iD©l STD909 STD910 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4") . ELECTRICAL SIMILAR TO BD909 AND BD910 APPLICATIONS GENERAL PURPOSE SWITCHING APPLICATION . GENERAL PURPOSE AMPLIFIERS DESCRIPTION The STD909 and the STD910 form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective
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STD91Q

IC 7474

Abstract: 7474 ic DTP206 COMPLEMENTARY NPN-PNP The DIONICS DTN and DTP series of high voltage transistors are specially , complementary specifications. Well-suited to a wide range of high voltage complementary symmetry applications , means of obtaining more efficient circuit performance with simplified complementary circuitry. *Pat
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7474 ic chip Data Display 7474 FOR IC 7474 T1590 DTN20 Dionics 200MA 360MW 100MHZ

mj2955

Abstract: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS â  STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM C
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SC08820 SC08830 P003F
Abstract: r z 7 SCS-THOM SON ii«IM)ILI(gTOißigS MJD31 B/3t C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . SURFACE-MOUNTING TO-252 (DPAK) POW ER PACKAGE IN TAPE & REEL (SUFFIX "T4") . ELECTRICAL SIMILAR TO TIP31B/C AND TIP32B/C APPLICATIONS . G ENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION . The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance -
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MJD31B/32B MJD31C/32C MJD31B/31C

complementary npn-pnp power transistors

Abstract: mje3055 / = 7 SGS-THOMSON Ä 7 # HôgoeiLiÊTTlOiOigl MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") . ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 APPLICATIONS . GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION The MJD2955 and MJD3055 form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. DPAK TO-252 (Suffix "T4"
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GC64540 MJ02955

mjl4281

Abstract: mjl4302 MJL4281A (NPN) MJL4302A (PNP) Preferred Device Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. http://onsemi.com · 350 V Collector-Emitter Sustaining Voltage · Gain Complementary: Gain Linearity from 100 mA to 5 A High Gain - 80 to 240 hFE = 50 (min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area - 1.0 A/100 V @ 1 Second High fT · · · 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor
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mjl4281 mjl4302

2N3055

Abstract: MJ2955 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter
STMicroelectronics
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MJ2955 TRANSISTOR 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: ic 3843 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer'sâ"¢ Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor â'¢ The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. â'¢ Designed for 100 W Audio Frequency â'¢ Gain Complementary: â'" Gain Linearity from 100 mA to 7 A â'" High Gain â'" 60 to 175 â'" hpE - 45 , MJL1302A* 'Motorola Preferred Davlc« 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200
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NPN 200 VOLTS 20 Amps POWER TRANSISTOR ic 3843 MJL3281A MJL1302A 7 amps pnp transistor NPN 1.5 AMPS POWER TRANSISTOR 2P610

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN V CBO Collector-Base
STMicroelectronics
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2n3055 malaysia 2N3055 JAPAN 2N3055 specification st 2n3055 2N3055 schematic diagram 2N3055 ST

complementary npn-pnp

Abstract: Mjw0302 MJW0281A (NPN) MJW0302A (PNP) Preferred Devices Advance Information Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW0281A and MJW0302A are PowerBase t power transistors for high power audio. http://onsemi.com · Designed for 100 W Audio Frequency Applications · Gain Complementary: · · · Gain Linearity from 100 mA to 5.0 A Low Harmonic Distortion Ultra High Safe Operation Area High fT - 30 MHz (min) 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 150 WATTS
ON Semiconductor
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Mjw0302

TO-252

Abstract: complementary npn-pnp STD909 STD910 COMPLEMENTARY SILICON POWER TRANSISTORS s s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO BD909 AND BD910 3 APPLICATIONS s GENERAL PURPOSE SWITCHING APPLICATION s GENERAL PURPOSE AMPLIFIERS DESCRIPTION The STD909 and the STD910 form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance
STMicroelectronics
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TO-252 0068772-B
Abstract: rZ 7 SGS-THOMSON MJD31B/31C MJD32B/32C Ã" 7# RfDEslLiüK@D($ fli!)[ eâ'™iRDS e -
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TIP31B/CAND

complementary npn-pnp power transistors

Abstract: mje3055 data MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 3 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION The MJD2955 and MJD3055 form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 1 DPAK TO-252 (Suffix "T4") INTERNAL
STMicroelectronics
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mje3055 data

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter
STMicroelectronics
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2N3055 series voltage regulator MJ2955 mexico 2n3055 circuit diagram 2n3055 voltage regulator 2N3055 power amplifier circuit Mj2955 power transistor

complementary npn-pnp power transistors

Abstract: complementary npn-pnp MJD31B/31C MJD32B/32C ® COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C 3 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 1 DPAK TO-252 (Suffix "T4") DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for
STMicroelectronics
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NPN Silicon Power Transistor DPAK P032P

complementary npn-pnp power transistors

Abstract: MJD31B MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO TIP31B/C AND TIP32B/C 3 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 1 DESCRIPTION s The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance
STMicroelectronics
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complementary npn-pnp power transistors

Abstract: TO252 MJD31B/31C MJD32B/32C ® COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C 3 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 1 DPAK TO-252 (Suffix "T4") DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base
STMicroelectronics
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TO252

complementary npn-pnp power transistors

Abstract: complementary npn-pnp MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO TIP31B/C AND TIP32B/C s APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 3 1 DPAK TO-252 (Suffix "T4") DESCRIPTION s The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective
STMicroelectronics
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