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POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
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complementary npn-pnp power transistors

Catalog Datasheet MFG & Type PDF Document Tags

ic 7474

Abstract: complementary npn-pnp power transistors DTP206 COMPLEMENTARY NPN-PNP The DIONICS DTN and DTP series of high voltage transistors are specially , PNP TRANSISTORS APPLICATIONS: PLASMA AND GAS DISCHARGE DISPLAY DRIVERS â'¢ SWITCHING REGULATORS - , , and the DTP series of PNP devices are each available as single unit TO-106 transistors and feature complementary specifications. Well-suited to a wide range of high voltage complementary symmetry applications , means of obtaining more efficient circuit performance with simplified complementary circuitry. *Pat
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DTN203 DTP204 DTP205 DTN206 DTP203 ic 7474 complementary npn-pnp power transistors 7474 ic complementary npn-pnp of 7474 ic DTN204 DTN205

IC 7474

Abstract: 7474 ic DTP206 COMPLEMENTARY NPN-PNP The DIONICS DTN and DTP series of high voltage transistors are specially , PNP TRANSISTORS APPLICATIONS: PLASMA AND GAS DISCHARGE DISPLAY DRIVERS â'¢ SWITCHING REGULATORS â , , and the DTP series of PNP devices are each available as single unit TO-106 transistors and feature complementary specifications. Well-suited to a wide range of high voltage complementary symmetry applications , means of obtaining more efficient circuit performance with simplified complementary circuitry. *Pat
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7474 ic specifications 7474 ic chip Data Display 7474 FOR IC 7474 T1590 DTN20 200MA 360MW 100MHZ

mjl4281

Abstract: mjl4302 Area - 1.0 A/100 V @ 1 Second High fT · · · 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS , MJL4281A (NPN) MJL4302A (PNP) Preferred Device Complementary NPN-PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. http://onsemi.com · 350 V Collector-Emitter Sustaining Voltage · Gain Complementary: Gain Linearity from 100 mA , Continuous Collector Current - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25
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mjl4281 mjl4302

complementary npn-pnp power transistors

Abstract: mje3055 / = 7 SGS-THOMSON Ä 7 # HôgoeiLiÊTTlOiOigl MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") . ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 APPLICATIONS . GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION The MJD2955 and MJD3055 form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. DPAK TO-252 (Suffix "T4"
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GC64540 MJ02955
Abstract: r z 7 SCS-THOM SON ii«IM)ILI(gTOißigS MJD31 B/3t C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . SURFACE-MOUNTING TO-252 (DPAK) POW ER PACKAGE IN TAPE & REEL (SUFFIX "T4") . ELECTRICAL SIMILAR TO TIP31B/C AND TIP32B/C APPLICATIONS . G ENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION . The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance -
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MJD31B/32B MJD31C/32C MJD31B/31C

complementary npn-pnp

Abstract: Mjw0302 MJW0281A (NPN) MJW0302A (PNP) Preferred Devices Advance Information Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW0281A and MJW0302A are PowerBase t power transistors for high power audio. http://onsemi.com · Designed for 100 W Audio Frequency Applications · Gain Complementary: · · · Gain Linearity from 100 mA to 5.0 A Low Harmonic Distortion Ultra High Safe Operation Area High fT - 30 MHz (min) 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 150 WATTS
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Mjw0302

complementary npn-pnp

Abstract: r = j SGS-THOMSON HQ©l@iLi(g71(s)iD©l STD909 STD910 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4") . ELECTRICAL SIMILAR TO BD909 AND BD910 APPLICATIONS GENERAL PURPOSE SWITCHING APPLICATION . GENERAL PURPOSE AMPLIFIERS DESCRIPTION The STD909 and the STD910 form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective
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STD91Q

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: ic 3843 MJL1302A* 'Motorola Preferred Davlc« 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer'sâ"¢ Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor â'¢ The MJL3281A and MJL1302A are PowerBase power transistors for high power , '¢ Gain Complementary: â'" Gain Linearity from 100 mA to 7 A â'" High Gain â'" 60 to 175 â'" hpE - 45 , Ade Total Power Dissipation @ Tc - 25°C PD 200 Watts Derate Above 25°C 1.43 W/°C Operating and
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NPN 200 VOLTS 20 Amps POWER TRANSISTOR ic 3843 MJL3281A MJL1302A 7 amps pnp transistor NPN 1.5 AMPS POWER TRANSISTOR 2P610

mj2955

Abstract: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS â  STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM C
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SC08820 SC08830 P003F

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: NPN 1.5 AMPS POWER TRANSISTOR MJW3281A (NPN) MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head , Complementary: · · · Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area - 1 A/100 V @ 1 Second High fT - 30 MHz Typical 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
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MJW-1302A

BIPOLAR M 846

Abstract: COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS CA8E 3 4 0 0 -0 2 ,8TYLE 2 TO -264 MAXIMUM , * *M o torcia Preferred Devio* PNP Com plem entary NPN-PNP Silicon Power Bipolar Transistor · The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. · Designed lor 100 W Audio Frequency · Gain Complementary: - Gain , - Continuous Total Power Dissipation < § >Tc - 25*C Derate Above 25°C Operating and Storage Junction
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BIPOLAR M 846 JL3281A JL1302A
Abstract: rZ 7 SGS-THOMSON MJD31B/31C MJD32B/32C Ã" 7# RfDEslLiüK@D($ fli!)[ eâ'™iRDS e -
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TIP31B/CAND 0068772-B

complementary npn-pnp power transistors

Abstract: mje3055 data MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 3 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS DESCRIPTION The MJD2955 and MJD3055 form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 1 DPAK TO-252 (Suffix "T4") INTERNAL
STMicroelectronics
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mje3055 data

free home theater circuit diagram

Abstract: MJW0281A MJW0281A (NPN) MJW0302A (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW3281A and MJW1302A audio output transistors. With superior gain linearity and safe operating area performance, these transistors , ://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS Features , Characteristics in Complementary Configurations ·Accurate Reproduction of Input Signal ·Greater Dynamic Range
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free home theater circuit diagram 100 watts IC audio amplifier circuit diagram MJW0281A MJW0302A MJW0281A/D

complementary npn-pnp power transistors

Abstract: complementary npn-pnp MJD31B/31C MJD32B/32C ® COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C 3 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 1 DPAK TO-252 (Suffix "T4") DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for
STMicroelectronics
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NPN Silicon Power Transistor DPAK P032P

complementary npn-pnp power transistors

Abstract: MJD31B MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO TIP31B/C AND TIP32B/C 3 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 1 DESCRIPTION s The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance
STMicroelectronics
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free home theater 2.1 circuit diagram

Abstract: free home theater circuit diagram MJL0281A (NPN) MJL0302A (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJL3281A and MJL1302A audio output transistors. With superior gain linearity and safe operating area performance, these transistors , Linearity ·High BVCEO ·High Frequency http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 180 WATTS Benefits ·Reliable Performance at Higher Powers ·Symmetrical
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free home theater 2.1 circuit diagram MJL0281A/D

mj1302

Abstract: J1302 * PNP M J1302A * *Motorola P n U n d DesKc* 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 , Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power , Complementary: - Gain Linearity from 100 mA to 7 A - High Gain - 60 to 175 - hpE = 4 5 (Min) @ Ip = 8 A Low , Voltage - 1.5 V Collector Current - Continuous - P eakO ) Base Current - Continuous Total Power , are M otorola recom m ended choices for future use and best overall value. Motorola Bipolar Power
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mj1302 J1302 J3281A PNPMJ1302A

complementary npn-pnp power transistors

Abstract: TO252 MJD31B/31C MJD32B/32C ® COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP31B/C AND TIP32B/C 3 APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 1 DPAK TO-252 (Suffix "T4") DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base
STMicroelectronics
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TO252

complementary npn-pnp power transistors

Abstract: complementary npn-pnp MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO TIP31B/C AND TIP32B/C s APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS 3 1 DPAK TO-252 (Suffix "T4") DESCRIPTION s The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective
STMicroelectronics
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