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Mattson Technology
Mattson Technology designs, manufactures, and markets semiconductor wafer processing equipment used in the fabrication of integrated circuits (ICs or chips). Mattson is a leading supplier of dry strip and rapid thermal processing (RTP) equipment to the global semiconductor industry. - semiconductor wafer processing equipment
Product Specific Upgrade Kits, Preventive Maintenance Service, Service Contract Offerings, On site, On call, After hours, Labor only, Labor and parts, Compressed work week, Standard work week, Labor Bank Program, Process Engineering Services, & more.
DATASHEET | PDF or ZIP |
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RTP Reg Form | RTP Reg Form : RTP (PDF) |
JVSTarticle - N2 Downstream Plasma | JVSTarticle : N2 downstream plasma (PDF) |
TNS9611-002 - Inductively Coupled Plasma For Highly Efficient And Low Damage Resist Stripping | TNS9611-002 : Inductively Coupled Plasma for Highly Efficient and Low Damage Resist Stripping (PDF) |
HDIS ICP Savas 0207 - Meeting Requirements For Dry Strip Of High-Dose Implated Resist At The 45nm Node - Plasma | HDIS ICP Savas 0207 : Meeting Requirements for Dry Strip of High-Dose Implated Resist at the 45nm Node (PDF) |
1998 ICPSM George Guerra - Characterization Of A Selectable-Mode Inductively Coulpled Plasma (ICPSM) Source For Advanced Dry Residue Removal Applications | 1998 ICPSM George Guerra : Characterization of a Selectable-Mode Inductively Coulpled Plasma (ICPSM) Source for Advanced Dry Residue Removal Applications (PDF) |
1997 IMAPS Via Guerra - Damage-Free, All-Dry Via. Etch Resist And Residue Removal Processes - Plasma | 1997 IMAPS Via Guerra : Damage-Free, All-Dry Via. Etch Resist and Residue Removal Processes (PDF) |
2002 SWest Guerra Wiesnoski - Implementation Of Plasma Processing Into BEOL With Organic Low-k Dielectrics | 2002 SWest Guerra Wiesnoski : Implementation of Plasma Processing into BEOL with Organic Low-k Dielectrics (PDF) |
3-in-1 SEMI-ISTC05 Xu - Process Integration Of Photoresist Stripping, Barrier Removal And Copper Treatment For Advanced BEOL Applications - Plasma | 3-in-1 SEMI-ISTC05 Xu : Process Integration of Photoresist Stripping, Barrier Removal and Copper Treatment for Advanced BEOL Applications (PDF) |
2002 UCPSS VCauwenberghe - Resist Strip And Cu Diffusion Barrier Etch In Cu BEOL Integration Schemes In A Mattson Highlands Chamber - Plasma | 2002 UCPSS VCauwenberghe : Resist Strip and Cu Diffusion Barrier Etch In Cu BEOL Integration Schemes in a Mattson Highlands Chamber (PDF) |
JF2007 JVST PRS ULKD EHLDs Xu - Study Of Plasma-Induced Damage Of Ultralow-k Dielectric Films During Photoresist Stripping | JF2007 JVST PRS ULKD EHLDs Xu : Study of Plasma-Induced Damage of Ultralow-k Dielectric Films During Photoresist Stripping (PDF) |
2004 MICRO FS Savas George - Using An ICP-Based Strip System To Perform Resist And Barrier-Layer Removal In Copper Low-k Processes - Plasma | 2004 MICRO FS Savas George : Using an ICP-Based Strip System to Perform Resist and Barrier-Layer Removal in Copper Low-k Processes (PDF) |
2004 RTP Keynote 2004 Vf2 - RTP Applications And Technology Options For The Sub-45 Nm Nodes - Thermal | 2004 RTP Keynote 2004 Vf2 : RTP Applications and Technology Options for the Sub-45 nm Nodes (PDF) |
SChina 2004 Tay Hu - UV-Enhanced Oxynitridation Of Silicon Substrates - Thermal | SChina 2004 Tay Hu : UV-Enhanced Oxynitridation of Silicon Substrates (PDF) |
2003 ECS 886 Lerch SPE Paper - Rapid Thermal Solid Phase Epitaxy Annealing For Ultra-Shallow Junction Formation | 2003 ECS 886 Lerch SPE Paper : Rapid Thermal Solid Phase Epitaxy Annealing for Ultra-Shallow Junction Formation (PDF) |
Physical Characterization Of ZrO2 Films On Silicon After Rapid Thermal Anneal | 2001 ECS 3-2001 ZrO2 Paper Yaozhi Rev : Physical Characterization of ZrO2 Films On Silicon After Rapid Thermal Anneal (PDF) |
In Situ Real-Time Studies Of Nickel Silicide Phase Formation - Thermal | 2001 JVST B 3-2001 NiSi Paper Yaozhi UNC : In Situ Real-Time Studies of Nickel Silicide Phase Formation (PDF) |
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