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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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SSM10N961L
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 |
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TRS8E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L |
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TBAW56
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Toshiba Electronic Devices & Storage Corporation
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TRS10E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L |
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TRS6E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L |
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