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Part : CATALOG 0201 SCHOTTKY DIODES Supplier : Skyworks Solutions Manufacturer : Component Distributors Stock : 49 Best Price : - Price Each : -
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cho therm t 500

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 100 200 300 400 500 ! I I T j^ S O t â'" VDS(V ) I I p =20 ju,s â , 7^237 D D 4 b G 1 2 325 â  S 6 T H _ SGSTHOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss â  . . . . RDS(on) Id 500 V , HIGH CURRENT, HIGH SPEED SW ITCHING . SW ITCH MODE POW ER SUPPLIES (SMPS) â  CHO PPER REGULATORS, CO , (continuous) at T c = 25 °C Id Drain C urrent (continuous) at T c = 100 °C I d m (» ) Drain C -
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7T2T237 GC21B40 GC21620
Abstract: Therm al Resistance - J u n c tio n -to -L e a d (Anode) (1) Therm al R esistance - Ju n ctio n -to -T a b (C athode) (1) Therm al R esistance - J u nctio n -to -A m b ien t (1 ) (1) M ounted with minimum , 0 .5 4 0 T j = T j = 25°C 10 1.0 0.5 100°C HA 1600 500 300 c n < CL C/D CL , Sheet Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount Package The S cho ttky P ow erm ite em p lo ys th e S cho ttky B arrier princip le w ith a b a rrie r m etal and ep itaxial -
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MBRM120ET3/D
Abstract: esistance Junction-case Max 0.69 T, Therm al R esistance Jun ction-a m bie nt Max Therm al R , TRANSISTOR TYPE STH14N50 STH14N50FI V dss RDS(on) Id 500 V 500 V 0.45 Q 0.45 £2 14.1 A 8 .8 A , ) CHO PPER REGULATORS, CONVERTERS, MOTOR CO NTROL, LIGHTING FOR INDUSTRIAL AND CO NSUMER EN VIRO NM ENT , V dgr gs Value STH14N50FI 500 500 ± 20 14.1 8.8 60 180 1.44 -65 to 150 150 8.8 5.5 60 70 0.56 , (R gs = 20 k fi) G ate-source Voltage Drain C urrent (continuous) at T c = 25 °C Drain C urrent -
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14n50 TL 424 TRANSISTOR 14N50 STH14N50/FI TT218
Abstract: . . . HIGH CURRENT, HIGH SPEED SW ITCHING SW ITCH MODE POW ER SUPPLIES (SMPS) CHO PPER REGULATORS , Drain C urrent (continuous) at T c = 25 °C Drain C urrent (continuous) at T c = 100 °C Drain C urrent , »tftj-case Rthj-am b Rlhc-sink Ti Therm al R esistance Junction-case Max 1.67 Therm al R esistance Jun ction-a m bie nt Max Therm al R esistance C ase-sink Typ M axim um Lead Tem perature For S , by T, max, 8 < 1%) A valanche C urrent, R epetitive or N ot-R epetitive (T c = 100 °C, pulse w idth -
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STP4N40FI SKs TRANSISTOR STP4N STP4N40 T0-220 ISOWATT220 STP4N40/FI TT220
Abstract: 25 150 Units I f = 75 A °C d i/d t = 500 A /|is °C V r = 600 V °C °C °C; V r = V r , operation) 110 A Ifa v (sin. 180; T ca se Fast Diode1) Modules = 85 °C; 50 Hz) V 58 A , Tvj Tvj i2t I RM SKKD 75 F Tease = 65 °C T Vj = T Vj = Tvj = trr Tvj = , ,2 °C /W R th c h per diode / per m odule ° 01 ° M ° VF T Vj = SKKD Features â'¢ â'¢ â'¢ â'¢ 0,1/0,05 °C /W Tvj - 4 0 . +150 °C â'¢ T s tg - 4 -
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SKKD105
Abstract: , AND CHO Average Turn-On Current V q u t 0V to 5V 100 240 400 50 500 mA , HIP408x family, the HIP4083 has no built in turn-on delay. Each output (AHO, BHO, and CHO) will turn-on , BHO HE HE HIP4083 CHO CHI MICRO­ CONTROLLER (OPTIONAL) HE GND _L HS HS 12V AHI BHI AHO BHO HIP4083 CHI GND CHO GND C AUTIO N : These devices , | T | AHS EN -m AHB DRIVER LEVEL SHIFTER UVLO VdD Elâ'"I E l - -
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95VDC HIP408
Abstract: TYPE 1N3070 SILICON SWITCHING DIODE B U L L E T I N N O . DL-S 7 3 9 3 7 0 , N O V E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 973 H IG H -V O L T A G E SW ITCH IN G D IO D E Rugged Double-Plug , 0.002 DIA _ 2 If AOS T 1 7ZZZZZZZZZZZZZZZ - 0 320 « A H - DIMENSIONS A l l IN INCHES NOTE. WITHIN THESE ZONES DIAMCTEI Of EACH UAO IS UNCONTIOilED ab solute m axim u m ratin g s a t 2 5 °C fre e -a ir tem p eratu re (unless o th erw ise noted) * v RM If ^FMIsurg«) ^FMIsurg«) *P * T lfg -
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cho bond 1029 1N4938 DO-35
Abstract: VDS (V) 300 500 ^ CHANNEL TEMPERATURE Tch (°C) bvd ss DRAIN-SOURCE VOLTAGE m m T E S T , T O S H IB A T O SH IB A FIELD EFFECT TRANSISTO R SILICON N C H A N N E L M O S TYPE ( tt- M O S V ) 2SK2914 2SK2914 HIGH SPEED, HIGH CURRENT SW ITCH IN G APPLICATIO NS CHO PPER REGULATOR, D C-DC CO NVERTER A N D M O T O R DRIVE APPLICATIO NS . INDUSTRIAL APPLICATIONS U nit in mm I* 10.3M A X . X , * Avalanche C urrent Repetitive Avalanche Energy* Channel Tem perature Storage Tem perature Range T H E R M A -
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SC-46 2-10P1B
Abstract: pinouts for T M O S and S cho ttky die a llo w the fle xib ility to use a sin gle co m p o n e n t fo r , t, TIME (s) Figure 13. FET Therm al Response Figure 14. Diode Reverse Recovery Waveform , FETKYâ"¢ MOSFET and Schottky Rectifier T he FETKYâ"¢ pro du ct fam ily in corp orates low RDS(on)> M O SFETs pa ckag ed w ith in ­ d u stry leading, lo w forw a rd drop, low leakage S cho ttky B arrier , Converter, B u c k -B o o s t, S yn ­ ch ro n o u s R ectification, Low V oltage M otor C ontrol, and Load -
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MMDFS3P303/D MMDFS3P303 FS3P303
Abstract: BTDblTS 0000210 5 T E KM Two typ e s of S cho ttky d io d e s are p ro v id e d on ea ch Q u ic k C h , TE K T R O N I X INC/ MELECS 4bE D fllGblVS O O O O S C H T TEKM QUICKCHIP 2K FAMILY , u it su b stra te s b rin g s the b e ne fits of h ig h -sp e e d , m atche d, S cho ttky b a rrier , p e e d b ip o la r transistors, ca p a cito rs, resistors, and S cho ttky d io d e s w h ich the an , cho ttky TTL buffers S a m p le -a n d -h o ld circu its H ig h -sp e e d co m p a ra to rs -
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by22b 2K-30
Abstract: PINS: ALO, BLO, CLO, AHO, BHO, AND CHO Low Level Output Voltage (V q u t V ss) Peak Turn-O n Current , fC l H A R R IS S E M I C O N D U C T O R HIP4086 80V, 0.5A Three Phase Driver , el M O S F E T s in T h re e P hase B rid g e C o n fig u ratio n · B o o tstrap S u p p ly M ax V o ltage to 9 5 V D C · B ias S u p p ly O p e ra tio n from 7V to 15V · 1 .25A Peak T u rn -O ff C u rren t · U s e r-P ro g ra m m a b le D ead T im e (0.25 ^ s to 4.5 ^ s ) · C h arg e -P u m p and B o -
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HIP4086AB HIP4081 HIP4082
Abstract: ® HIP4086 H R I A RS S E M I C O N D U C T O R 80V, 0.5A Three Phase Driver January , HIP4086 (PDIP, SOIC) 80V TOP VIEW BHB^ 24] BHO B H I^ 23] BHS BLI | T 22] BLO ALI | T 2 ^ ALO Ã" H I^ 2Ã| V DD Vss nr 19] CLO RDEL^ ïjj] AHS UVLO Q [ 17] AHO QT Ï6 | AHB DIS 0 0 jH CHS rfsh CLI QT 14] CHO C H ï[Ï2 13] CHB C A U T IO N : T h e s e d e v ic e s a re s e n s itiv e to e le c tro s ta tic d is c h a rg e . U -
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1-800-4-HARRIS
Abstract: Output current lo U T 500 mA / driver Ground pin current Ig n d 2 3 *1 DIP package , ./ 7 IN oâ'" *â'" ¿4â'" V W -11â'" T \ â'" Fig .1 BA12001B Fig.2 BA12002 -âºI- o C O M IN o 1 W \T - T< < Z â'" P -o O U T Fig.3 BA12003B / BF Fig , V Diode forward current If 500 mA Operating temperature Topr - 25 ~ + 75 °C , = 350mA, Iin = 500^A V V ce = 2V, Iout = 100mA V V ce = 2V, Iout = 200mA V V ce = -
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BA12003BF BA12004B
Abstract: I db v G 5- o v -dip/d, = lOOA/jus T ch = 25"C fiC ITh ìrmal Characteristics Items Therm , 2SK2003-01MR N-CHANNEL SILICON POWER MOS-FET FU JI P O W E R M O S -F E T FAP-IIA SERIES , "L Gate (G) ? o Source (S) ^D (P U 1 5 ) Vcs Pd Ton V W *C T slg ·c Electrical , ward transconductance In p jt capacitance Oui put capacitance Reverse transfer capacitance T u n-on time to n (o n tçjton) + tr) T u n-off time t0fr (H 0 ff " td(orf) + tf ) A v ilanche capability Coi -
OCR Scan
K2003 A2329
Abstract: = = 1200 V V C E (sa t) = 3.7 V I- *â'" itSl 804 -U 90- * T j = 25 °C to 150°C V CGR V , CES = 200 A VDI I T e s t C o n d itio n s ^C (D C ) M , V D I20 0 has no pin 10 + 11 V V GES C ontin uou s ±2 0 V V GEM T ransien t ±30 V ^C 5 2 Tc = 25°C 200 A ^CBO T c = 80°C 168 A ^CM T c = 25°C , t p = 1 ms 400 A tsc V G = 15 V, VC = 0.6 â'¢ VCES, T. = 125°C e E (S C S O -
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200-12S4 I200-12S4 VII200-12S4 VID200-12S4 VDI200-12S4 QD02770
Abstract: Internal Reference + 5V O 10 ¿iF + T°-1^ i +10 fiY i AV* CHO CH1 REF DV+ OUT 100 n , AV+ - CHO 1 2 20 - DV+ 19 - V r e f OUT 18 - CS 17 - DI 16 - CLK AD C 10734 15 - SARS 14 , See NS Package Number M20B AV+ - CHO - CH 1 - N.C. - N.C. - N.C. - COM - PD - DGND - N.C. - 1 2 3 4 5 ADC10732 e 7 e 9 10 20 19 18 17 REF CS DI AV+ CHO CH1 CH2 CH3 CH4 - CH5 1 2 , M20B DGND 12 Top View See NS Package Number M24B SSOP Package DV+ - AV+ - CHO - CH 1 - -
OCR Scan
ADC10731/ADC10732/ADC10734/ADC10738 ADC10731
Abstract: . 1.5 # i t o o iijiix -f V dss = 500 V, I d(d o = ± 8 A R Ds , «& ^ V dss V gss I didc) iD(pulse) Pt T ch T stg < a C /3 & ft- Æ 500 ±20 ± 8 ±32 f , . PULSE WIDTH m 5 Rth= r(t)-R th,ch-o R th (ch -c»(t) : Rth(ch-c) : æ Â « Î Ï ( 1 . 2 5 "C , M O S Field E ffe ct P o w e r T r a n s is to r 2SK874 N X - f MOS FET n m m r-t>i&mn& &>;, s;jsmx^ 'y - 9 > M 2 ''° > 7 - M O S F E T fl-M E -
OCR Scan
TC-6301 b 772 p rjh ah
Abstract: in th e load, cho ose th e tria c th a t has the lo w est pe ak gate trig g e r current. T his w ill , , a rem o te ly p ro gra m m a ble tem p e ra tu re reduction is a va ila ble on Pin 4. T he cho ice , Order this document by UAA2016/D M O TO R O LA Zero V oltage S w itch Power Controller T he , regulation action o ve r a +1 °C band around the se t point. For en erg y savings th e re is a p ro gra m m a , u t pulses w hen the se n so r con ne ction is broken. P reset te m p e ra tu re (i.e. de fro st -
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TRIAC GE 626 uaa2016 application notes 3 kw triac UAA2016
Abstract: olarity A s sig n m e n t M ultip le xe r O utp u t C hannel A s s ig n m e n t M U XO UT1 CHO CH2 CH4 CH6 , /Hold June 1999 N a t i o n a l S e m i c o n d u c t o r ADC12L030/ADC12L032/ADC12L034/ADC12L038 , 011830 w w w .n a tion a l.com Ordering Information Industrial T e m perature Range - 4 0 C < T A , CHO - CH1 - CH2 - CH3 - COM - M UX0UT1- A /D IN 1 - MUX0UT2 - A /D IN 2 - VREF VREF+ - 1 2 3 , Packages Top View CHO - CH1 - COM - MUXOUT1 - A /D IN 1 - MUX0UT2 - A /D IN 2 - VREF VREF + " -
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EM 4093 001 12L030 C12L032 12L034 12L038
Abstract: eter Conditions Max. Units T ca s e T case ' t (A V ) = 75°C 85°C 7 ^ ° P ' ° ° 190 160 150 125 300 A A A A A 1/10 = Mean on-state current Halfwave, resistive load T 1 h e a ts in k T.h e a , . =85°C ts in k ^T (R M S ) RMS value T c a s e = 75°C MP02 XXX 190 , < ID ID 6800 5500 231000 15000 A A A2s A2s < I2 t l2 t for fusing V r = 5 0 % V , off-state voltage At 1000A,' T ca se = 25°C A tV R R M /V D R M ,T j = 125°C To 60% V D R M , Tj= 125 -
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DS4479-3 MP02/190
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