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SN28846KL Texas Instruments CCD DRIVER, CDFP18 visit Texas Instruments
TC246CYM-B0 Texas Instruments Impactron High Sensitivity VGA-Resolution Frame Interline Transfer Color CCD (Cooled) 12-XCEPT visit Texas Instruments
TC246RGB-B0 Texas Instruments Impactron High Sensitivity VGA-Resolution Frame Interline Transfer Color CCD (Cooled) 12-XCEPT visit Texas Instruments
TC247SPD-B0 Texas Instruments Impactron High Sensitivity VGA-Resolution Frame Interline Transfer B/W CCD (Cooled) 12-XCEPT visit Texas Instruments
EL7182CS Intersil Corporation 2A CCD DRIVER, PDSO8, SO-8 visit Intersil
BQ500100DCKR Texas Instruments Wireless Charging Current Monitor 6-SC70 visit Texas Instruments

charge amplifier x-ray

Catalog Datasheet MFG & Type PDF Document Tags

S11684

Abstract: x-ray cmos IMAGE SENSOR scintillator. The detector (two-dimensional photodiode array), highperformance charge amplifier, and scanning , ) × 1/Sf .(1) (b) Active pixel type G : amplifier gain Q(t): integrated charge I(t , value after A/D conversion is set to the saturation charge value. Address switch Amplifier Data , amplifier first-stage transistor constants determined by charge amplifier 1/f noise constant of charge amplifier first-stage transistor gate oxide film capacitance of charge amplifier first-stage transistor W
Hamamatsu
Original

LEMO 5 pin out

Abstract: LEMO twodimensional photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit , Scintillator Specification 50 × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0 , electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on , each amplifier array by scanning the horizontal shift register. The control board converts the analog
Hamamatsu
Original
Abstract: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifier with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into Hamamatsu
Original

xr 2204

Abstract: Amptek ) Peaks due to partial charge collection 10 µs/div Figure 4. PX2CR Amplifier Output Shaping Time , and includes a spectroscopy grade Shaping Amplifier. The XR-100CR/PX2CR system ensures stable , . The thermoelectric cooler cools both the silicon detector and the input FET transistor to the charge , charge sensitive preamplifier. The reset transistor, which is typically used in most other systems has , injecting a precise charge pulse through the detector capacitance to the input FET. This method eliminates
Amptek
Original
XR-100CR MCA8000A xr 2204 Amptek XR-100T-CZT RTD 1055 lemo 6 pin connector XR100CR XR-100T
Abstract: two-dimensional photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit , 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL Direct deposition CsI , electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on , each amplifier array by scanning the horizontal shift register. The control board converts the analog Hamamatsu
Original
C9730DK-10 D-82211 B1201 KACC1143E09

LEMO 5 pin out

Abstract: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially
Hamamatsu
Original
LEMO 5 pin out C9732DK-11 SE-171 KACC1177E02

charge amplifier array

Abstract: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into
Hamamatsu
Original
charge amplifier array KACC1143E03
Abstract: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into Hamamatsu
Original
Abstract: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially Hamamatsu
Original
KACC1177E03
Abstract: two-dimensional photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit , 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct , electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on , each amplifier array by scanning the horizontal shift register. The control board converts the analog Hamamatsu
Original
KACC1177E06
Abstract: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially Hamamatsu
Original
C9732DK KACC1125E07

LEMO k series

Abstract: LEMO 5 pin out array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into
Hamamatsu
Original
LEMO k series KACC1143E06
Abstract: array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into Hamamatsu
Original

CMOS blemish specification

Abstract: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially
Hamamatsu
Original
CMOS blemish specification KACC1125E09

CMOS Camera Module CSI usb Interface

Abstract: LEMO 5 pin out array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , Scintillator Specification 50 × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal into
Hamamatsu
Original
CMOS Camera Module CSI usb Interface sensor x-ray KACC1143E05
Abstract: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially Hamamatsu
Original

LEMO

Abstract: EN-61326-1 photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 132 ch charge amplifiers with CDS circuit. CsI , × 50 52.8 × 52.8 1056 × 1056 1032 × 1032 Charge amplifier array USB 2.0 TTL Direct deposition , charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row , amplifier array by scanning the horizontal shift register. The control board converts the analog signal
Hamamatsu
Original
LEMO EN-61326-1 x-ray cmos image sensor CMOS Camera Module CSI charge amplifier scintillator KACC1143E04

sensor x-ray

Abstract: made up of a twodimensional photodiode array, row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 78 ch charge , 624 608 × 616 Charge amplifier array LVDS (differential), 13-bit 15.15 LVDS (differential) TTL , photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially selected by the row-scanning vertical shift register
Hamamatsu Photonics
Original
C10322D KACC1132E06

x-ray cmos IMAGE SENSOR

Abstract: C973 , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially
Hamamatsu
Original
C973 KACC1125E08
Abstract: , row-scanning vertical shift register, and 8 charge amplifier arrays. Each charge amplifier array has a horizontal shift register and consists of 300 ch charge amplifiers with CDS circuit. CsI scintillator is , × 50 120 × 120 2400 × 2400 2368 × 2340 Charge amplifier array USB 2.0, 14-bit TTL Direct deposition , converted to fluorescence, which then enters the two-dimensional photodiode array where electric charge is accumulated in each pixel according to the light intensity. The accumulated charge on each row is sequentially Hamamatsu
Original
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