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cgh35 Datasheet

Part Manufacturer Description PDF Type
CGH35015F Cree 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Original
CGH35030F Cree 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Original
CGH351T500V2C Cornell Dubilier Aluminum Capacitors, Capacitors, CAP ALUM 350UF 500V SCREW Original
CGH351T500V2C Mallory Capacitor Type CGH - Computer Grade Capacitors Original

cgh35

Catalog Datasheet MFG & Type PDF Document Tags

CGH35060

Abstract: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree's CGH35060F2/P2 is a gallium , . Package Type : 440193 & 440206 PN: CGH3506 0F2 & CGH35 060P2 Typical Performance Over 3.1-3.5 GHz , GHz 11.5 46.7 10.1 62.0 -4.3 Units dB dBm dBm % dB Note: Measured in the CGH35060F2-TB amplifier , prior to packaging. 2 Measured in the CGH35060F2-TB test fixture. 3 100 µS Pulse Width at 20% Duty Cycle , Performance Small Signal Gain and Return Losses vs Frequency of the CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ
Cree
Original
CGH35060 CGH35060F2/P2
Abstract: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Creeâ'™s CGH35060F2/P2 is a gallium , . Package Type : 440193 & 440206 PN: CGH3506 0F2 & CGH35 060P2 Typical Performance Over 3.1-3.5 GHz , -7.3 -17.0 -4.3 dB Note: Measured in the CGH35060F2-TB amplifier circuit, under 100 µsec , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F2-TB test fixture , CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA 20 15 10 S11,S21, S22 (dB) 5 0 -5 -10 -15 Cree
Original
Abstract: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Creeâ'™s CGH35060F2/P2 is a gallium , . Package Type : 440193 & 440206 PN: CGH3506 0F2 & CGH35 060P2 Typical Performance Over 3.1-3.5 GHz , -7.3 -17.0 -4.3 dB Note: Measured in the CGH35060F2-TB amplifier circuit, under 100 µsec , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F2-TB test fixture , CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA 20 15 10 S11,S21, S22 (dB) 5 0 -5 -10 -15 Cree
Original

16312 transistor

Abstract: CGH35060F1-TB Drain Efficiency and Gain vs Output Power of the CGH35060F1 and CGH35060P1 in the CGH35060F1-TB, VDD = , and CGH35060P1 in Broadband Amplifier Circuit CGH35060F-TB, VDD = 28 V, IDQ = 250 mA 6.0 5.5 5.0 4.5 , CGH35060P1 in the CGH35060F1-TB, VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB 5.2 4.8 4.4 4.0 3.6 , CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access , 3.4 GHz 12.2 1.82 1.83 23.1 10.3 Note: Measured in the CGH35060F1-TB amplifier circuit, under
Cree
Original
16312 transistor CGH35060F 060P1
Abstract: (dBm) Typical EVM and Efficiency vs Output Power of CGH35060F1 and CGH35060P1 in the CGH35060F1-TB , CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access , (TC = 25˚C) Package Type : 440193 & 440196 PN: CGH3506 0F1 & CGH35 060P1 of Demonstration , 13.1 dB Input Return Loss Note: Measured in the CGH35060F1-TB amplifier circuit, under 802.16 , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F1-TB test fixture Cree
Original
Abstract: (dBm) Typical EVM and Efficiency vs Output Power of CGH35060F1 and CGH35060P1 in the CGH35060F1-TB , CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access , (TC = 25˚C) Package Type : 440193 & 440196 PN: CGH3506 0F1 & CGH35 060P1 of Demonstration , 13.1 dB Input Return Loss Note: Measured in the CGH35060F1-TB amplifier circuit, under 802.16 , CGH35060F1-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst Cree
Original

transistor E 13007

Abstract: 54-619 CGH35015S-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated , Units Volts Volts °C °C °C/W Note: 1 As measured on the CGH35015S-TB, using 11 vias, 2 mil plating , , Coding Type RS-CC, Coding Rate Type 2/3. 3 Measured in the CGH35015S-TB test fixture. 4 Measured on wafer , Preliminary CGH35015S-TB Demonstration Amplifier Circuit CGH35015S-TB Demonstration Amplifier Circuit , : +1.919.313.5778 www.cree.com/wireless CGH35015S-TB Demonstration Amplifier Circuit Schematic
Cree
Original
transistor E 13007 54-619 43251 msl 9351 cree marking information s-parameters CGH35015S CGH3501

CGH103T250X4L

Abstract: CGH133T250X5L 29.6 7.4 9.3 2.0 5.625 350 CGH351T500V2 C 692.0 612.0 1.3 1.5 2.0 2.125 3,800
Cornell Dubilier
Original
CGH172T250V2L CGH742T250X3L CGH292T250V3L CGH902T250W5L CGH103T250X4L CGH133T250X5L CGH223T250X8L CGH412T250V4L CGH782T350X5L CGH172T500V5L
Abstract: : +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH35015F-TB Demonstration Amplifier Circuit CGH35015F-TB Demonstration Amplifier Circuit Outline 3-000522 REV 4 CGH35015-TB Copyright © 2005-2006 , 6.0 13.0 9.0 dB Input Return Loss Note: Measured in the CGH35015F-TB amplifier circuit , . 3 Measured in the CGH35015F-TB test fixture. Copyright © 2005-2006 Cree, Inc. All rights , www.cree.com/wireless CGH35015-TB Demonstration Amplifier Circuit Schematic CGH35015-TB Demonstration Cree
Original
CGH35015
Abstract: Fax: +1.919.313.5778 www.cree.com/wireless CGH35030F-TB Demonstration Amplifier Circuit Schematic CGH35030F-TB Demonstration Amplifier Circuit Outline 3-000538 REV1 CGH35030-TB Copyright © 2005-2007 , .1CEN LK 5POS 1 Q1 CGH35030F 1 C8 J3,J4 CGH35030F-TB Demonstration Amplifier , Signal Gain EVM @ 36 dBm Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM , www.cree.com/wireless CGH35030F-TB Demonstration Amplifier Circuit Bill of Materials Designator Cree
Original
CGH3503
Abstract: CGH35030F CGH35030F in Broadband Amplifier Circuit CGH35030F-TB 26% 4.8 24% 4.4 EVM 22 , 5POS 1 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH35030F 1 CGH35030F-TB , Return Loss 12.3 8.5 6.1 5.4 6.1 9.0 dB Note: Measured in the CGH35030F-TB , wafer prior to packaging. 2 Measured in the CGH35030F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz , Efficiency at 23 dBm and 36 dBm vs Frequency of CGH35030 CGH35030F in Broadband Amplifier Circuit 6.0 Cree
Original

HEADER RT

Abstract: A 12-15 GHz High Gain Amplifier CGH35030F Qty 1 1 1 1 1 1 1 1 3 2 2 2 1 1 1 1 1 CGH35030F-TB Demonstration Amplifier Circuit , % % dB Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel , Measured in the CGH35030F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 , Frequency (GHz) Typical EVM and Efficiency at 23 dBm and 36 dBm vs Frequency of CGH35030 CGH35030F in , CGH35030F-TB 26% 24% EVM Drain Efficiency Efficiency 22% 20% 18% 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0
Cree
Original
HEADER RT A 12-15 GHz High Gain Amplifier

CGH35060F

Abstract: CGH35060 the CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR = 9.8 dB 16 15 14 , Efficiency vs Output Power of CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR , 3.4 GHz 12.2 1.82 1.83 23.1 10.3 Note: Measured in the CGH35060F-TB amplifier circuit, under 802.16 , Measured in the CGH35060F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 , CGH35060F-TB, VDD = 28 V, IDQ = 250 mA S21 16 0 14 S21 -2 12 -4 10 -6 S21 (dB) 8
Cree
Original

transistor 8772

Abstract: Transistor C 4927 Efficiency vs Frequency of CGH35030F CGH35030F in Broadband Amplifier Circuit CGH35030F-TB 26% 24% EVM , 3.48, h = 20 mil CGH35030F Qty 1 1 1 1 1 1 1 1 3 2 2 2 1 1 1 1 1 CGH35030F-TB Demonstration , % % dB Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel , wafer prior to packaging. 2 Measured in the CGH35030F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz , and 36 dBm vs Frequency of CGH35030 CGH35030F in Broadband Amplifier Circuit 6.0 5.5 5.0 4.5 4.0
Cree
Original
transistor 8772 Transistor C 4927 8772 transistor
Abstract: 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH35015F-TB Demonstration Amplifier Circuit Outline 3-000522 REV 4 CGH35015-TB CGH35015S-TB Demonstration Amplifier , Loss Note: Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1 , the CGH35015F-TB demonstration circuit and are not source and load pull of the transistor itself. CGH35015F-TB Demonstration Amplifier Circuit Copyright © 2005-2006 Cree, Inc. All rights reserved. The Cree
Original
35015S
Abstract: HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGH35030F 1 C8 C13 J3,J4 CGH35030F-TB , Signal Gain EVM @ 36 dBm Note: Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM , Fax: +1.919.313.5778 www.cree.com/wireless CGH35030F-TB Demonstration Amplifier Circuit Schematic CGH35030F-TB Demonstration Amplifier Circuit Outline 3-000538 REV2 CGH35030F-TB Copyright © 2005-2008 , www.cree.com/wireless CGH35030F-TB Demonstration Amplifier Circuit Bill of Materials Designator Cree
Original
Abstract: Vdc Surge ) 350 CGH351T500V2 C 692.0 612.0 520 CGH521T500V2L 470.0 416.0 710 CGH711T500V3 C 345.0 Cornell Dubilier
Original
GH402T350X3L CGH432T350X3L CGH382T350W4L CGH412T350W4L CGH492T350W5L CGH522T350W5L
Abstract: 5.625 350 CGH351T500V2 C 692.0 612.0 1.3 1.5 2.0 2.125 3,800 CGH382T350W4L 39.3 25.2 Cornell Dubilier
Original
Abstract: , W/.500 SMA FLNG 2 HEADER RT>PLZ .1CEN LK 9POS 1 BASEPLATE, CGH35120 1 PCB, RO4350B Cree
Original
CGHV40100 CGHV40 V40100P CGHV40100F-TB

CGH103T250X4L

Abstract: CGH133T250X5L 5.625 350 CGH351T500V2 C 692.0 612.0 1.3 1.5 2.0 2.125 3,800 CGH382T350W4L 39.3 25.2
Cornell Dubilier
Original
CGH502T250W3L CGH532T250V5L CGH702T250W4L MPF CAPACITOR 30434-45
Abstract: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree's CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for 3.1-3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Package Type : 440193 & 440206 PN: CGH3506 0F2 & CGH35 060P2 Typical Performance Over 3.1-3.5 GHz TT Electronics / IRC
Original
1500M 2000M

cgh resistor

Abstract: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Creeâ'™s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for 3.1-3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package. Package Type : 440193 & 440206 PN: CGH3506 0F2 & CGH35 060P2 Typical Performance Over 3.1-3.5 GHz
TT Electronics / IRC
Original
cgh resistor
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