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cep83a3 Datasheet

Part Manufacturer Description PDF Type Ordering
CEP83A3 Chino-Excel Technology Corp. N-Channel Enhancement Mode FET
ri

4 pages,
94.33 Kb

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cep83a3

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Abstract: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS , CEP83A3/CEB83A3 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test , 1.5 V 4 CEP83A3/CEB83A3 150 VGS=10,8,6,4V 80 ID, Drain Current (A) ID, Drain , Voltage (V) CEP83A3/CEB83A3 11 22 33 44 10 2 10 1 10 55 4 100ms ... Original
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4 pages,
395.29 Kb

CEB83A3 CEP83A3 equivalent CEP83A3 CEP83A3/CEB83A3 CEP83A3/CEB83A3 abstract
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Abstract: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). , 2005.August http://www.cetsemi.com 4 - 178 CEP83A3/CEB83A3 Electrical Characteristics Parameter , , Starting TJ = 25 C 4 - 179 A 1.5 V 4 CEP83A3/CEB83A3 50 100 80 ID, Drain , )Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP83A3/CEB83A3 20 40 ... Original
datasheet

4 pages,
94.37 Kb

CEP83A3 CEP83A3/CEB83A3 CEP83A3/CEB83A3 abstract
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Abstract: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for , RJA 62.5 C/W 2004.September http://www.cetsemi.com 4 - 178 CEP83A3/CEB83A3 , V 4 CEP83A3/CEB83A3 50 100 80 ID, Drain Current (A) ID, Drain Current (A , , Gate to Source Voltage (V) CEP83A3/CEB83A3 20 40 60 80 10 DC 10 10 100 ... Original
datasheet

4 pages,
94.32 Kb

CEP83A3 equivalent CEP83A3 CEP83A3/CEB83A3 CEP83A3/CEB83A3 abstract
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Abstract: 8 100 100 50 1.7 Single CEP83A3 / CEB83A3 CEB83A3 7 10 75 75 48 1.7 , Toshiba IRL3402 IRL3402 IRL3502 IRL3502 CEP41A2 CEP41A2 CEB41A2 CEB41A2 Vishay IRL3302 IRL3302 IRL3202/S IRL3202/S CEP83A3 CEB83A3 CEB83A3 ... Original
datasheet

35 pages,
123.39 Kb

IRF630 complementary AOD436 AO4606 Si4800BDY IRF1010E CEP70N06 SI4430BDY cep6060r CEF02N6 cep76139 CEM2163 CEP20N06 CEP63A3 CEF04N6 equivalent 2928-8J 2928-8J abstract
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Abstract: CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.5 m @VGS = 10V. RDS(ON) = 7.0 m @VGS = 4.5V. Super high dense cell design for , are subject to change without notice . 1 CEP83A3G/CEB83A3G Electrical Characteristics Parameter , TJ = 25 C 2 A 1.5 V CEP83A3G/CEB83A3G 25 150 25 C 20 ID, Drain Current , (A) VGS, Gate to Source Voltage (V) CEP83A3G/CEB83A3G 10 20 30 40 10 10 1 ... Original
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4 pages,
392.79 Kb

CEB83A3G CEB83A3 CEP83A3G CEP83A3 CEP83A3G/CEB83A3G CEP83A3G/CEB83A3G abstract
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