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cep83a3 Datasheet

Part Manufacturer Description PDF Type Ordering
CEP83A3 Chino-Excel Technology N-Channel Enhancement Mode FET
ri

4 pages,
94.33 Kb

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cep83a3

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Abstract: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for , RJA 62.5 C/W 2004.September http://www.cetsemi.com 4 - 178 CEP83A3/CEB83A3 , V 4 CEP83A3/CEB83A3 50 100 80 ID, Drain Current (A) ID, Drain Current (A) VGS , , Gate to Source Voltage (V) CEP83A3/CEB83A3 20 40 60 80 10 DC 10 10 100 ... Chino-Excel Technology
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4 pages,
94.32 Kb

CEP8 CEP83A3 equivalent CEP83A3 CEP83A3/CEB83A3 TEXT
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Abstract: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). , . 2005.August http://www.cetsemi.com 4 - 178 CEP83A3/CEB83A3 Electrical Characteristics , CEP83A3/CEB83A3 50 100 80 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,4V 60 , Voltage (V) CEP83A3/CEB83A3 20 40 60 80 10 DC 10 10 100 100us 1ms 10ms ... Chino-Excel Technology
Original
datasheet

4 pages,
94.37 Kb

CEP83A3 CEP83A3/CEB83A3 TEXT
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Abstract: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS , CEP83A3/CEB83A3 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test , 1.5 V 4 CEP83A3/CEB83A3 150 VGS=10,8,6,4V 80 ID, Drain Current (A) ID, Drain , Voltage (V) CEP83A3/CEB83A3 11 22 33 44 10 2 10 1 10 55 4 100ms ... Chino-Excel Technology
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datasheet

4 pages,
395.29 Kb

CEB83A3 CEP83A3 equivalent CEP83A3 CEP83A3/CEB83A3 TEXT
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Abstract: 8 100 100 50 1.7 Single CEP83A3 / CEB83A3 CEB83A3 7 10 75 75 48 1.7 , Toshiba IRL3402 IRL3402 IRL3502 IRL3502 CEP41A2 CEP41A2 CEB41A2 CEB41A2 Vishay IRL3302 IRL3302 IRL3202/S IRL3202/S CEP83A3 CEB83A3 CEB83A3 ... Original
datasheet

35 pages,
123.39 Kb

cep83a3 cross reference AOD436 CEP51A3 IRFZ48V "cross reference" CEM2163 CEF02N6 CEB6355 cef04n6 cef02n7 cep76139 CEM3040 CEP20N06 CEP63A3 CEF04N6 equivalent FQPF8N60C equivalent cep6355 CEF02N6A cep83a3 CEP50N06 CEP83A3 equivalent TEXT
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Abstract: CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.5 m @VGS = 10V. RDS(ON) = 7.0 m @VGS = 4.5V. Super high dense cell design for , Details are subject to change without notice . 1 CEP83A3G/CEB83A3G Electrical Characteristics , , VDD = 24V, RG = 25, Starting TJ = 25 C 2 A 1.5 V CEP83A3G/CEB83A3G 25 150 25 C , ) CEP83A3G/CEB83A3G 10 20 30 40 10 10 1 10 50 100ms 2 1ms 10ms DC TC ... Chino-Excel Technology
Original
datasheet

4 pages,
392.79 Kb

CEB83A3G CEB83A3 CEP83A3G CEP83A3 CEP83A3G/CEB83A3G TEXT
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