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cep83a3 Datasheet

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CEP83A3 Chino-Excel Technology N-Channel Enhancement Mode FET Original

cep83a3

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for , RJA 62.5 C/W 2004.September http://www.cetsemi.com 4 - 178 CEP83A3/CEB83A3 , V 4 CEP83A3/CEB83A3 50 100 80 ID, Drain Current (A) ID, Drain Current (A) VGS , , Gate to Source Voltage (V) CEP83A3/CEB83A3 20 40 60 80 10 DC 10 10 100 Chino-Excel Technology
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CEP83A3 equivalent CEP8 CEP83A3/CEB83A3
Abstract: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). , . 2005.August http://www.cetsemi.com 4 - 178 CEP83A3/CEB83A3 Electrical Characteristics , CEP83A3/CEB83A3 50 100 80 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,4V 60 , Voltage (V) CEP83A3/CEB83A3 20 40 60 80 10 DC 10 10 100 100us 1ms 10ms Chino-Excel Technology
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9500pF
Abstract: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS , CEP83A3/CEB83A3 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test , 1.5 V 4 CEP83A3/CEB83A3 150 VGS=10,8,6,4V 80 ID, Drain Current (A) ID, Drain , Voltage (V) CEP83A3/CEB83A3 11 22 33 44 10 2 10 1 10 55 4 100ms Chino-Excel Technology
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CEB83A3
Abstract: 8 100 100 50 1.7 Single CEP83A3 / CEB83A3 7 10 75 75 48 1.7 , Toshiba IRL3402 IRL3502 CEP41A2 CEB41A2 Vishay IRL3302 IRL3202/S CEP83A3 CEB83A3 -
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CEM3040 CEP50N06 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 2928-8J CEM2082 CEM2108 CEM8206 CEM8207 CEM8208
Abstract: CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.5 m @VGS = 10V. RDS(ON) = 7.0 m @VGS = 4.5V. Super high dense cell design for , Details are subject to change without notice . 1 CEP83A3G/CEB83A3G Electrical Characteristics , , VDD = 24V, RG = 25, Starting TJ = 25 C 2 A 1.5 V CEP83A3G/CEB83A3G 25 150 25 C , ) CEP83A3G/CEB83A3G 10 20 30 40 10 10 1 10 50 100ms 2 1ms 10ms DC TC Chino-Excel Technology
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CEB83A3G CEP83A3G/CEB83A3G