NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| 1PS88SB82 T/R | NXP Semiconductors | 15 V, 30 mA low Cd Schottky barrier diodes - Cd max.: 1@VR=0V pF; Configuration: triple isolated ; IF max: 30 mA; IFSM max: - A; IR max: 0.2@VR=1VA; IR max: 0.2@VR=1V mA; VFmax: 340@IF=1mA mV; VR max: 15 V | 
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| 1PS66SB82 T/R | NXP Semiconductors | 15 V, 30 mA low Cd Schottky barrier diodes - Cd max.: 1@VR=0V pF; Configuration: triple isolated ; IF max: 30 mA; IFSM max: - A; IR max: 0.2@VR=1VA; IR max: 0.2@VR=1V mA; VFmax: 340@IF=1mA mV; VR max: 15 V |
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| MAX9484CTP+ | Maxim Integrated Products | Dual-Output, Multimode CD-RW/DVD Laser-Diode Drivers |
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| MAX9484CTP+T | Maxim Integrated Products | Dual-Output, Multimode CD-RW/DVD Laser-Diode Drivers |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ) 1.2 VF, FORWARD VOLTAGE (VOLTS) FIGURE 4. CAPACITANCE(BAS16W BAS16W) CD. DIODE CAPACITANCE (PF) CD , ://www.weitron.com.tw 4 6 8 FIGUTRE 7. CAPACITANCE (BAV99W BAV99W) 0.68 CD. DIODE CAPACITANCE (PF) CD , WEITRON BAS16W BAS16W / BAV70W BAV70W BAW56W BAW56W / BAV99W BAV99W Surface Mount Switching Diode SWITCHING DIODE , BAS16W BAS16W / BAV70W BAV70W BAW56W BAW56W / BAV99W BAV99W Maximum Ratings (EACH DIODE) Characteristic Symbol , Characteristics (TA=25 C Unless Otherwise Note) (Each Diode) Characteristic Symbol Min VBR 75 ... | Original |
4 pages, |
CD DIODE BAW56W bav99W diode BAV99W A7 BAV70W BAV99W BAS16W BAS16W abstract |
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| Abstract: VR. REVERSE VOLTAGE (VOLTS) 1.2 VF, FORWARD VOLTAGE (VOLTS) CD. DIODE CAPACITANCE (PF) CD , http://www.weitron.com.tw 4 6 8 FIGUTRE 7. CAPACITANCE (BAV99 BAV99) 0.68 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 2 VR. REVERSW VOLTAGE (VOLTS) VR. REVERSE , WEITRON BAS16 BAS16 / BAV70 BAV70 BAW56 BAW56 / BAV99 BAV99 Surface Mount Switching Diode SWITCHING DIODE 200-215m , BAS16 BAS16 / BAV70 BAV70 BAW56 BAW56 / BAV99 BAV99 Maximum Ratings (EACH DIODE) Symbol BAS16 BAS16 75 Forward Current VR ... | Original |
4 pages, |
SOT 23 a6 diode bas16 a6 BAV70 bav99 marking BAV99 SOT 23 DATA SHEET BAW56 A1 BAS16 BAW56 bav70 equivalent BAV99 application BAV99 Diode bav99 Diode BAV99 SOT23 BAS16 abstract |
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| Abstract: VF, FORWARD VOLTAGE (VOLTS) CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) FIGURE 4. , 8 FIGUTRE 7. CAPACITANCE (BAV99 BAV99) 0.68 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE , WEITRON BAS16 BAS16 / BAV70 BAV70 BAW56 BAW56 / BAV99 BAV99 Surface Mount Switching Diode SWITCHING DIODE 200-215m , 0.13 1.10 0.61 0.25 BAS16 BAS16 / BAV70 BAV70 BAW56 BAW56 / BAV99 BAV99 Maximum Ratings (EACH DIODE) Symbol BAS16 BAS16 , Alumina Electrical Characteristics (TA=25 C Unless Otherwise Note) (Each Diode) Characteristic ... | Original |
4 pages, |
Diode bav99 BAW56 BAS16 Diode BAV99 SOT23 BAV70 BAV99 BAS16 abstract |
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| Abstract: If forward current 100 mA T¡ junction temperature 150 °C cd diode capacitance Vr = 3V; f= 1 to , voltage IF = 100 mA - 1.1 V Ir reverse current VB = 20 V - 10 nA VR = 20 V; Tamb=75°C - 1 HA cd diode , b^E D â- bbSB'ìBl GG2bl73 37T â- APX rnnips oemiconouciors_ Silicon planar diode N AUER PHILIPS , switching diode, intended for low loss band switching applications in VHF TV tuners. The device has a low diode capacitance and low series resistance and is encapsulated in a microminiature plastic SOD123 ... | OCR Scan |
3 pages, |
Philips diode BA582 "MARKING CODE P" PHILIPS marking diode Cathode indicated by blue band Cathode indicated by blue band BA582 abstract |
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| Abstract: Ti junction temperature 150 °C cd diode capacitance Vb = 3V; f = 1 to 100 MHz 1.1 PF Td series , 10 nA VR = 20 V; T^-re-c - 1 HA Cd diode capacitance VR = 3V; f= 1 to 100 MHz - 1.1 PF I'd , PhHip^emiconductor^^ - 7110fl5b D0bflgl3 Tb? BiPHIN Product specification Silicon planar diode BA582 BA582 DESCRIPTION The BA582 BA582 is a silicon planar high performance band switching diode, intended for low loss band switching applications in VHF TV tuners. The device has a low diode capacitance and low ... | OCR Scan |
2 pages, |
marking code sp diode Cathode indicated by blue band BA582 Cathode indicated by blue band DIODE Sp marking code BA582 abstract |
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| Abstract: (2836) 1.0 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 1.50 1.25 , CAPACITANCE(7000) CD. DIODE CAPACITANCE (PF) 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 , MMBD2836 MMBD2836 / MMBD2838 MMBD2838 MMBD7000 MMBD7000 Surface Mount Switching Diode SWITCHING DIODE 100-200m AMPERRES , / MMBD2838 MMBD2838 MMBD7000 MMBD7000 Maximum Ratings (EACH DIODE) Symbol Characteristic Reverse Voltage Forward , Otherwise Note) (Each Diode) Characteristic Symbol Min Max Unit - Vdc 0.1 1.0 ... | Original |
4 pages, |
MMBD7000 SOT23 MMBD7000 mmbd2838 a6 MMBD2838 MMBD2836 marking m5c A6 sot-23 m5c diode MMBD2836 abstract |
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| Abstract: (2836) 1.0 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 1.50 1.25 , CAPACITANCE(7000) CD. DIODE CAPACITANCE (PF) 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 , MMBD2836 MMBD2836 / MMBD2838 MMBD2838 MMBD7000 MMBD7000 Surface Mount Switching Diode SWITCHING DIODE 100-200m AMPERRES , / MMBD2838 MMBD2838 MMBD7000 MMBD7000 Maximum Ratings (EACH DIODE) Symbol Characteristic Reverse Voltage Forward , Otherwise Note) (Each Diode) Characteristic Symbol Min Max Unit - Vdc 0.1 1.0 ... | Original |
4 pages, |
MMBD7000 MMBD2838 MMBD2836 marking m5c m5c diode MMBD2836 abstract |
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| Abstract: .FORWARD VOLTAGE 1.0 CD. DIODE CAPACITANCE (PF) 1.75 CD. DIODE CAPACITANCE (PF) 10 1.50 , ) FIGURE 5. CAPACITANCE(2838) CD. DIODE CAPACITANCE (PF) 0.68 0.64 0.60 0.56 0.52 0 , MMBD1009 MMBD1009 MMBD1011 MMBD1011 Surface Mount Switching Diode P b Lead(Pb)-Free SWITCHING DIODE 200m , ) (Each Diode) Symbol Min Max Unit VBR 75 - Vdc IR - 0.1 uAdc Off , ://www.weitron.com.tw 2/4 22-Sep-05 MMBD1009 MMBD1009 MMBD1011 MMBD1011 Off Characteristic Symbol Min CD - 4.0 ... | Original |
4 pages, |
MMBD1011 MMBD1009 SOT 23 a6 diode MMBD1009 abstract |
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| Abstract: 28 V Ir reverse current VR = 28 V - 10 nA cd diode capacitance VR = 28 V; f = 1 MHz - 1.055 pF , CONDITIONS MIN. MAX. UNIT Ir reverse current VR = 28 V - 10 nA VR = 28 V; Tj = 85 °C - 200 nA cd diode , specification Variable capacitance diode BB901 BB901 DESCRIPTION The BB901 BB901 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended as a tunable coupling diode in VHF , VR is the value at which Cd = 10 pF. 3 Mastro Top view Marking code: BB901 BB901 = S14. Fig.1 ... | OCR Scan |
4 pages, |
Philips diode marking code 10 sot23 BB901 marking t04 sot23 BB901 abstract |
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| Abstract: MIN. MAX. UNIT IR reverse current V„ = 30 V - 10 nA VR = 30 V; Tamb=85 °C - 200 nA cd diode , Philips Semiconductors UHF variable capacitance diode ^N AUER PHILIPS/DISCRETE BB134 BB134 bTE T> DESCRIPTION The BB134 BB134 is a silicon, double-implanted variable capacitance diode in planar technology , package, SOD323. A feature of this diode is the excellent matching performance, achieved by the Direct , CONDITIONS MIN. MAX. UNIT vR continuous reverse voltage - 30 V IR reverse current VR = 30 V - 10 nA cd ... | OCR Scan |
3 pages, |
variable CAPACITANCE DIODE BB135 diode code B74 BB134 UHF variable capacitance diode V2E MARKING DIODE UHF diode DIODE marking code B74 sod323 diode marking code 2E sod323 diode marking code AC DIODE B74 BB134 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| Condensateur polarise Kw CP $EndMODULE # $MODULE D3 Li D3 Cd Diode 3 pas Kw DIODE DEV $EndMODULE # $MODULE D4 Li D4 Cd Diode 4 pas Kw DIODE DEV $EndMODULE # $MODULE D5 Li D5 Cd Diode 5 pas Kw DIODE DEV $EndMODULE # $MODULE D6 Li D6 Cd Diode 6 pas Kw DIODE $EndMODULE # $MODULE R3 Li R3 PCBNEW-LibDoc-V1 17/5/2005-07:34:20 # $MODULE LCD4 Li LCD4 Cd Afficheur LCD 4 digits Kw LCD $EndMODULE # $MODULE LM16255 LM16255 LM16255 LM16255 Li LM16255 LM16255 LM16255 LM16255 Cd Afficher LCD LM16255 LM16255 LM16255 LM16255 2 lignes de 16 car. Kw LCD www.datasheetarchive.com/files/kaleidoscope/cad/kicad - kicad/modules/discret.mdc |
Kaleidoscope | 17/05/2005 | 5.02 Kb | MDC | discret.mdc |
| = 40 V at IPP = 1 A n Ultra low leakage current: IRM < 1 nA n Typ. diode capacitance matching: ∆Cd/Cd VRWM reverse standoff voltage - - 24 V Cd diode capacitance f = 1 MHz; VR = 0 V - 11 17 pF NXP diode 6. Characteristics [1] ∆Cd is the difference of the capacitance measured between pin 1 and pin 3 breakdown voltage IR = 5 mA 25.4 27.8 30.3 V Cd diode capacitance f = 1 MHz; VR = 0 V - 11 17 pF ∆Cd/Cd capacitance matching added • Table 8 "Characteristics": ∆Cd/Cd diode capacitance matching added PESD1CAN_3 www.datasheetarchive.com/download/36331940-595893ZC/ird.cd.contents.zip (PESD1CAN_4.pdf) |
NXP | 23/10/2012 | 35869.34 Kb | ZIP | ird.cd.contents.zip |
| ; see Fig.3 âˆ' 200 nA rs diode series resistance f = 470 MHz; note 1 âˆ' 0.75 Ω Cd diode capacitance VR = 0 diode BB135 BB135 BB135 BB135 GRAPHICAL DATA handbook, full pagewidth 0 20 MBE874 MBE874 MBE874 MBE874 10210110 âˆ'1 4 8 12 16 Cd (pF) V (V BB135 BB135 BB135 BB135 UHF variable capacitance diode alfpage M3D049 M3D049 M3D049 M3D049 Philips Semiconductors Product specification capacitance diode BB135 BB135 BB135 BB135 FEATURES • Excellent linearity • Very small plastic SMD package. • C28: 1.9 pF; ratio upconversion concepts • VCO. DESCRIPTION The BB135 BB135 BB135 BB135 is a variable capacitance diode, fabricated in planar www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BB135_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| A VR = 10 V; Tj = 85 °C; see Fig.3 âˆ' âˆ' 200 nA rs diode series resistance f = 470 MHz; Cd = 9 pF âˆ' 0.4 0.7 Ω Cd diode capacitance f = 1 MHz; see Figs 2 and 4 VR = 1 V 14.4 16 17.6 pF VR = 4 V 7.6 8.6 9.6 p BB156 BB156 BB156 BB156 Low-voltage variable capacitance diode Philips Semiconductors Product specification LIMITING âˆ'55 +150 °C Tj operating junction temperature âˆ'55 +125 °C Low-voltage variable capacitance diode BB156 BB156 BB156 BB156 variable capacitance diode, in a SOD323 very small plastic SMD package. PINNING PIN DESCRIPTION 1 cathode 2 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BB156_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| S diode series resistance f = 100 MHz; VR = 3 V âˆ' 0.25 0.5 Ω Cd diode capacitance VR = 1 V; f = 1 MHz 89 capacitance double diode book, halfpage M3D088 M3D088 M3D088 M3D088 2001 Oct 12 2 Philips Semiconductors Product specification Low-voltage variable capacitance double diode BB201 BB201 BB201 BB201 FEATURES • Excellent linearity • C1: 95 pF; C7.5: 27.6 pF • C1 to C capacitance double diode with a common cathode, fabricated in silicon planar technology and encapsulated in 60134). SYMBOL PARAMETER MIN. MAX. UNIT Per diode VR continuous reverse voltage âˆ' 15 V IF continuous www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BB201_1.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| Fig.3 âˆ' 200 nA rs diode series resistance f = 470 MHz; VR = 1 V âˆ' 0.6 Ω Cd diode capacitance VR = 1 V BB145B-01 BB145B-01 BB145B-01 BB145B-01 Low-voltage variable capacitance diode Philips Semiconductors Product specification -voltage variable capacitance diode BB145B-01 BB145B-01 BB145B-01 BB145B-01 FEATURES • Ultra small plastic SMD package • C4: 2.75 pF; ratio: 2 is a planar technology variable capacitance diode in a SOD723 package. PINNING PIN DESCRIPTION 1 R capacitance ratio f = 1 MHz 2.2 âˆ'Cd 1V( ) Cd 4V( ) - Philips Semiconductors Product www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BB145B-01_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| .75 Ω Cd diode capacitance f = 1 MHz; see Figure 1 and 3 VR = 1 V 18 - 19.5 pF VR = 28 V 1.9 2.1 2.25 p V; in a sequence of 10 diodes (gliding) - - 2 % Cd 1V( ) Cd 28V( ) - Cd 19V( ) Cd 15 diodes to sequence of 10 diodes • Table 5 "Characteristics": ∆Cd/Cd in a sequence of 4 diodes BB149 BB149 BB149 BB149 UHF variable capacitance diode 1. Product profile 1.1 General description The BB149 BB149 BB149 BB149 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 (SC-76 SC-76 SC-76 SC-76) very www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BB149_5.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| diode 4. Marking 5. Limiting values 6. Characteristics [1] VR is the value at which Cd = 9 pF Table 3 - - 10 nA Tj = 85 °C; see Figure 2 - - 200 nA rs diode series resistance f = 470 MHz [1] - 0.6 0.75 Ω Cd .05 - capacitance matching VR = 1 V to 28 V; in a sequence of 10 diodes (gliding) - - 2 % Cd 1V( ) Cd 2V coefficient of diode capacitance as a function of reverse voltage; typical values. mlc391 10 20 30 Cd (pF) 0 ": ∆Cd/Cd conditions changed from sequence of 15 diodes to sequence of 10 diodes • Table 5 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BB149A_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| capacitance diode 4. Marking 5. Limiting values 6. Characteristics [1] VR is the value at which Cd = 9 p .6 0.75 Ω Cd diode capacitance f = 1 MHz; see Figure 1 and 3 VR = 1 V 18.22 - 21.26 pF VR = 28 V 1 ": ∆Cd/Cd conditions changed from sequence of 15 diodes to sequence of 10 diodes • Table 5 BB179 BB179 BB179 BB179 UHF variable capacitance diode 1. Product profile 1.1 General description The BB179 BB179 BB179 BB179 is a planar technology variable capacitance diode, in a SOD523 (SC-79 SC-79 SC-79 SC-79) ultra small plastic SMD package. The www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BB179_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| A VR = 30 V; Tj = 85 °C - - 200 nA rs diode series resistance f = 470 MHz [1] - 0.6 0.75 Ω Cd diode .05 - capacitance matching VR = 1 V to 28 V; in a sequence of 10 diodes (gliding) - - 2 % Cd 1V( ) Cd 2V ": ∆Cd/Cd conditions changed from sequence of 15 diodes to sequence of 10 diodes • Table 5 BB179B BB179B BB179B BB179B UHF variable capacitance diode 1. Product profile 1.1 General description The BB179B BB179B BB179B BB179B is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79 SC-79 SC-79 SC-79) ultra www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BB179B_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |