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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

cd diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: . CAPACITANCE(BAS16W) CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 0.68 0.64 0.60 0.56 , ) 0.68 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 2 VR. REVERSW VOLTAGE , WEITRON BAS16W / BAV70W BAW56W / BAV99W Surface Mount Switching Diode * â'Gâ' Lead(Pb)-Free SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low , (EACH DIODE) Characteristic Symbol Reverse Voltage Forward Current 70 75 VR IF Weitron
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SC-70
Abstract: 40 50 VR. REVERSE VOLTAGE (VOLTS) 1.2 VF, FORWARD VOLTAGE (VOLTS) CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) FIGURE 4. CAPACITANCE(BAS16) 0.68 0.64 0.60 0.56 , CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 2 VR. REVERSW VOLTAGE (VOLTS , WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode SWITCHING DIODE , BAS16 / BAV70 BAW56 / BAV99 Maximum Ratings (EACH DIODE) Symbol BAS16 75 Forward Current VR Weitron
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BAS16W

Abstract: BAV99W VF, FORWARD VOLTAGE (VOLTS) FIGURE 4. CAPACITANCE(BAS16W) CD. DIODE CAPACITANCE (PF) CD. DIODE , 8 FIGUTRE 7. CAPACITANCE (BAV99W) 0.68 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE , WEITRON BAS16W / BAV70W BAW56W / BAV99W Surface Mount Switching Diode SWITCHING DIODE , BAS16W / BAV70W BAW56W / BAV99W Maximum Ratings (EACH DIODE) Characteristic Symbol , Characteristics (TA=25 C Unless Otherwise Note) (Each Diode) Characteristic Symbol Min VBR 75
Weitron
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bav99W diode CD DIODE BAV99W A7
Abstract: ) 0.68 1.00 FIG.4 - DIODE CAPACITANCE (BAV70W) CD, DIODE CAPACITANCE,(pF) 0.64 CD, DIODE , CAPACITANCE (BAV99W) CD, DIODE CAPACITANCE,(pF) 1.50 CD, DIODE CAPACITANCE,(pF) 0 2 4 6 8 0.64 , VOLTAGE (V) FIG.7 - DIODE CAPACITANCE (BAL99W) 4.00 CD, DIODE CAPACITANCE,(pF) 3.00 2.00 , Switching Diode Formosa MS BAS16W/BAV70W/BAW56W/BAV99W/BAL99W List List , 2010/07/10 Revision C Page. 8 Page 1 DS-221914 Switching Diode Formosa MS Package Formosa MS
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MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-1038 METHOD-1027
Abstract: forward current 100 mA Ti junction temperature 150 °C cd diode capacitance Vâ , PF 0.7 Q Cd diode capacitance Vb = 3V; f = 1 to 100 MHz 'd series resistance , Philips Semiconductors Product specification Silicon planar diode DESCRIPTION The BA582 is a silicon planar high performance band switching diode, intended for low loss band switching applications in VHF TV tuners. The device has a low diode capacitance and low series resistance and is -
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SOT 23 a6 diode

Abstract: MMBD1009 1.0 CD. DIODE CAPACITANCE (PF) 1.75 CD. DIODE CAPACITANCE (PF) 10 1.50 1.25 1.00 , (2838) CD. DIODE CAPACITANCE (PF) 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 , MMBD1009 MMBD1011 Surface Mount Switching Diode P b Lead(Pb)-Free SWITCHING DIODE 200m , ) (Each Diode) Symbol Min Max Unit VBR 75 - Vdc IR - 0.1 µAdc Off , ://www.weitron.com.tw 2/4 22-Sep-05 MMBD1009 MMBD1011 Off Characteristic Symbol Min CD - 4.0
Weitron
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SOT 23 a6 diode

DIODE LL4148

Abstract: taitron diode IR Max. Reverse Current CD Diode Capacitance 4.0 pF Trr Reverse Recovery Time , Temperature (°C) Instantaneous Forward Voltage (V) Fig.3- Typical junction capacitance CD Diode , SURFACE MOUNT SWITCHING DIODE LL4148 LL4448 Surface Mount Switching Diode Features · · · · , Switching Diode LL4148 LL4448 Typical Characteristics Curves Fig.1- Power Derating Curve PD Power , Page 2 of 4 Surface Mount Switching Diode LL4148 LL4448 Dimensions in inches (mm) MiniMELF
Taitron Components
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DIODE LL4148 taitron diode MIL-STD-202
Abstract: ) 1.2 VF, FORWARD VOLTAGE (VOLTS) FIGURE 4. CAPACITANCE(BAS16W) CD. DIODE CAPACITANCE (PF) CD , ://www.weitron.com.tw 4 6 8 FIGUTRE 7. CAPACITANCE (BAV99W) 0.68 CD. DIODE CAPACITANCE (PF) CD , WEITRON BAS16W / BAV70W BAW56W / BAV99W Surface Mount Switching Diode SWITCHING DIODE , BAS16W / BAV70W BAW56W / BAV99W Maximum Ratings (EACH DIODE) Characteristic Symbol , Characteristics (TA=25 C Unless Otherwise Note) (Each Diode) Characteristic Symbol Min VBR 75 Weitron
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smd diode marking F1

Abstract: BB131 Ir reverse current VR = 30 V - 10 nA cd diode capacitance VR = 0.5 V; f=1 MHz 8 17 pF VR = 28 V , - 10 nA VR = 30 V; Tamb = 85 °C - 200 nA cd diode capacitance VR = 0.5 V; f = 1 MHz 8 17 PF , Philips Semiconductors VHF variable capacitance diode â'"^^^ N AMER PHILIPS/DISCRETE DESCRIPTION The BB131 is a silicon variable capacitance diode in planar technology, intended for use as a coupling diode in VHF tuners. The device Is encapsulated in the ultra-small plastic SMD package, SOD323
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smd diode marking F1 MARKING CO5 smd DIODE code marking Q smd diode code B5 A4BB206 MSB045

bav99

Abstract: BAW56 40 50 VR. REVERSE VOLTAGE (VOLTS) 1.2 VF, FORWARD VOLTAGE (VOLTS) CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) FIGURE 4. CAPACITANCE(BAS16) 0.68 0.64 0.60 0.56 , CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 2 VR. REVERSW VOLTAGE (VOLTS , WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode * â'Gâ' Lead(Pb)-Free SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage
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bav70 equivalent

specification diode BY 127

Abstract: diode BY 127 SPECIFICATION = 28 V - 10 nA cd diode capacitance VR = 0.5 V; f = 1 MHz 60 75 PF VR = 28 V; f = 1 MHz 2.4 2.9 , current - 10 nA cd diode capacitance VR = 0.5 V; f = 1 MHz 60 75 PF VR = 28 V; f = 1 MHz 2.4 2.9 PF , specification VHF variable capacitance diode BB911A DESCRIPTION The BB911A is a silicon variable capacitance diode in planar technology with a very high capacitance ratio. It is intended for use in all-band tuners , ; note 2 Q Note 1. Vn is the value at which Cd = 40 pF. © E-mâ'"nflpDâ'" (1) Cathode side: red
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specification diode BY 127 diode BY 127 SPECIFICATION SOD68 S0068 yc28 S3131 D0270D3 S3T31 0027DD4 MBC244

MMBD2838

Abstract: MMBD7000 (2836) 1.0 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 1.50 1.25 , . CAPACITANCE(7000) CD. DIODE CAPACITANCE (PF) 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 , MMBD2836 / MMBD2838 MMBD7000 Surface Mount Switching Diode SWITCHING DIODE 100-200m AMPERRES , / MMBD2838 MMBD7000 Maximum Ratings (EACH DIODE) Symbol Characteristic Reverse Voltage Forward , Otherwise Note) (Each Diode) Characteristic Symbol Min Max Unit - Vdc 0.1 1.0
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m5c diode MMBD7000 SOT23 marking m5c A6 sot-23 mmbd2838 a6

m5c diode

Abstract: marking m5c (2836) 1.0 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 1.50 1.25 , . CAPACITANCE(7000) CD. DIODE CAPACITANCE (PF) 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 , MMBD2836 / MMBD2838 MMBD7000 Surface Mount Switching Diode SWITCHING DIODE 100-200m AMPERRES , / MMBD2838 MMBD7000 Maximum Ratings (EACH DIODE) Symbol Characteristic Reverse Voltage Forward , Otherwise Note) (Each Diode) Characteristic Symbol Min Max Unit - Vdc 0.1 1.0
Weitron
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BAV99

Abstract: BAW56 40 50 VR. REVERSE VOLTAGE (VOLTS) 1.2 VF, FORWARD VOLTAGE (VOLTS) CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) FIGURE 4. CAPACITANCE(BAS16) 0.68 0.64 0.60 0.56 , CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 2 VR. REVERSW VOLTAGE (VOLTS , WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode SWITCHING DIODE 200-215m , BAS16 / BAV70 BAW56 / BAV99 Maximum Ratings (EACH DIODE) Symbol BAS16 75 Forward Current VR
Weitron
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Diode BAV99 SOT23 BAV99 application Diode bav99 BAV99 SOT 23 DATA SHEET BAW56 A1 bav99 marking

BAV99

Abstract: BAV70 . DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) FIGURE 4. CAPACITANCE(BAS16) 0.68 0.64 , (BAV99) 0.68 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.75 2 VR. REVERSW , WEITRON BAS16 / BAV70 BAW56 / BAV99 Surface Mount Switching Diode SWITCHING DIODE 200-215m , 1.10 0.61 0.25 BAS16 / BAV70 BAW56 / BAV99 Maximum Ratings (EACH DIODE) Symbol BAS16 75 , Characteristics (TA=25 C Unless Otherwise Note) (Each Diode) Characteristic Symbol Min VBR 75
Weitron
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A2x smd

Abstract: diode t25 4 A6 - 100.0 CD 4.0 1.5 at VR = 100V O at VR = 50V, TJ =125 C Diode Capacition(VR = , DIODE CAPACITANCE (MMBD2836) FIG.4 - DIODE CAPACITANCE (MMBD2838) 1.0 CD, DIODE CAPACITANCE,(pF) CD, DIODE CAPACITANCE,(pF) 1.75 1.50 1.25 1.00 0.75 0.9 0.8 0.7 0.6 0 , ) FIG.5 - DIODE CAPACITANCE (MMBD7000) CD, DIODE CAPACITANCE,(pF) 0.68 0.64 0.60 0.56 , Formosa MS SMD Switching Diode MMBD2836/MMBD2838/MMBD7000 List List
Formosa MS
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A2x smd diode t25 4 A6 smd diode a6 marking 820 smd rectifier smd diode code a2 A2 diode smd DS-221927 METHOD-1026 METHOD-1036 125OC METHOD-1051 METHOD-1056
Abstract: BAL99W) FIG.3 - DIODE CAPACITANCE (BAS16W) FIG.4 - DIODE CAPACITANCE (BAV70W) 1.00 CD, DIODE CAPACITANCE,(pF) CD, DIODE CAPACITANCE,(pF) 0.68 0.64 0.60 0.56 0.52 0.90 0.80 0.70 , ) 6 8 FIG.6 - DIODE CAPACITANCE (BAV99W) 0.68 CD, DIODE CAPACITANCE,(pF) 1.75 CD , VOLTAGE (V) FIG.7 - DIODE CAPACITANCE (BAL99W) CD, DIODE CAPACITANCE,(pF) 4.00 3.00 2.00 , Formosa MS SMD Switching Diode BAS16W/BAV70W/BAW56W/BAV99W/BAL99W List List Formosa MS
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JESD22-A102 METHOD-4066-2 METHOD-1021 METHOD-1031

F 407 Diode

Abstract: BBY31 current VR = 28 V - - 10 nA cd diode capacitance VR = 28 V; f = 1 MHz 1.6 - 2 PF C, ^28 V capacitance , reverse current VR = 28 V - - 10 nA VR = 28 V; T, = 85 °C - - 1 MA cd diode capacitance VR = 1 V; f = , specification Variable capacitance diode BBY31 N AMER PHILIPS/DISCRETE b^E ]>â'" 30 cd (PF) 20 10 , Philips Semiconductors Variable capacitance diode BBY31 DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic
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F 407 Diode BBY31 philips semiconductor SOT23 N1 MBB110
Abstract: CAPACITANCE (BAS16W) FIG.4 - DIODE CAPACITANCE (BAV70W) 1.00 CD, DIODE CAPACITANCE,(pF) CD, DIODE , DIODE CAPACITANCE (BAV99W) 0.68 CD, DIODE CAPACITANCE,(pF) 1.75 CD, DIODE CAPACITANCE,(pF , .7 - DIODE CAPACITANCE (BAL99W) CD, DIODE CAPACITANCE,(pF) 4.00 3.00 2.00 1.00 0 0 , Formosa MS Switching Diode BAS16W/BAV70W/BAW56W/BAV99W/BAL99W List List , Date 2010/07/10 Revision C Page. 8 Formosa MS Switching Diode BAS16W/BAV70W/BAW56W Formosa MS
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A2x smd

Abstract: CD Maximum Diode Capacition(V R = 0V, f = 1.0MHz) Maximum Reverse Recovery Time(I F = I R = 10mA , ) FIG.3 - DIODE CAPACITANCE (MMBD2836) FIG.4 - DIODE CAPACITANCE (MMBD2838) 1.0 CD, DIODE CAPACITANCE,(pF) CD, DIODE CAPACITANCE,(pF) 1.75 1.50 1.25 1.00 0.75 0.9 0.8 0.7 , ,(V) FIG.5 - DIODE CAPACITANCE (MMBD7000) CD, DIODE CAPACITANCE,(pF) 0.68 0.64 0.60 , Formosa MS SMD Switching Diode MMBD2836/MMBD2838/MMBD7000 List List
Formosa MS
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