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casr 6-np Datasheet

Part Manufacturer Description PDF Type
CASR-6-NP LEM Current Transducers, Sensors, Transducers, SENSOR CURRENT 6A 5V MOD Original

casr 6-np

Catalog Datasheet MFG & Type PDF Document Tags

casr series

Abstract: Current Transducer CASR series IPN = 6, 15, 25, 50 A Ref: CASR 6-NP, CASR 15-NP, CASR 25-NP , data CASR 6-NP At TA = 25°C, VC = + 5 V, NP = 1 turn, RL = 10 kâ"¦, internal reference, unless , ) Linearity error (% of IPN) Typical performance characteristics CASR 6-NP 2.4 -1 0 1 2 3 , series Maximum continuous DC primary current 40 35 90 80 CASR 6-NP 25 IP (A) IP (A , CASR 6-NP Figure 26: IP vs TA for CASR 15-NP 90 160 80 70 140 60 50 40 30
LEM
Original
casr series 15-NP 25-NP 50-NP 94-V0
Abstract: Current Transducer CASR series IPN = 6, 15, 25, 50 A Ref: CASR 6-NP, CASR 15-NP, CASR 25-NP , CASR series Electrical data CASR 6-NP At TA = 25°C, VC = + 5 V, NP = 1 turn, RL = 10 kâ"¦, internal , error (% of IPN) Typical performance characteristics CASR 6-NP 1 2 3 4 5 t (µs , Maximum continuous DC primary current 40 35 90 80 CASR 6-NP 25 IP (A) IP (A) 30 20 , 120 0 20 40 80 100 120 TA (°C) TA (°C) Figure 25: IP vs TA for CASR 6-NP LEM
Original

CASR 25-NP

Abstract: LTSR 15-NP Current Transducer CASR series IPN = 6, 15, 25, 50 A Ref: CASR 6-NP, CASR 15-NP, CASR 25-NP, CASR 50-NP For the electronic measurement of current: DC, AC, pulsed., with a galvanic isolation , CASR 6-NP At TA = 25°C, VC = + 5 V, NP = 1 turn, RL = 10 k, internal reference, unless otherwise noted , VOUT (V) Linearity error (% of IPN) Typical performance characteristics CASR 6-NP Figure 6: dv , notice. www.lem.com CASR series Electrical data CASR 15-NP At TA = 25°C, VC = + 5 V, NP =
LEM
Original
CASR 25-NP LTSR 15-NP casr 25 -np LTSR 6-NP LTSR 25-NP CASR 15-NP

LTS 6-NP

Abstract: LTS 15-NP LTS 25-NP LTS CASR Series CASR 6-NP CASR 15-NP CASR 25-NP CASR 50-NP 6 15 25 50 4 4 4 4 YES YES , CASR 6-NP LTSR 6-NP CASR 15-NP LTSR 15-NP CASR 25-NP LTSR 25-NP Nominal current, I PN Measuring , according to the primary current circuit configuration (as example: CAS or CASR 25-NP) Variant 1 , the primary current circuit (as example: CAS or CASR 25-NP) The variant 2 (Fig.4b) corresponds to a , current. For the 50 A models (CAS 50-NP, CASR 50-NP and CKSR 50-NP), the current measuring range is
LEM
Original
LTS 6-NP LTS 15-NP CAS 6-NP ch-1228 cksr6-np CASR50-NP J-194-0021M RS-159 CH-1228

M5M4257A-12

Abstract: msm4257ap setup time before CAS t RCS 0 0 0 0 ns t h(CAS-R) Read hold time after CAS (Note 11) t RCH 0 0 0 , (cas-R) ^st be satisfied for a read cycle. 12 tdis(CAS) max defines the time at which the output , width t NCAS 20 25 30 40 ns tw n(CASH) Nibble mode precrarge time t NP 15 15 15 20 ns t , ) HIGH IMPEDANCE STATE *h(RAS-R) th(CAS-R tdis(CAS) ? DATA VALID Write Cycle (Early Write) RAS , ) twN tfKCAS-R) th(cas-r) tsu( R-CAS) tdis
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OCR Scan
M5M4257A-12 msm4257ap M5M4257A-15 RASH L-12 M5M42S7AP 262144-BIT 262144-WORD M5M4257AP M5M425/AP

ncwd

Abstract: tcbw th(CAS-R) must be satisfied for a read cycle. 12 t,jis(cAS> max defines the time at which the output , twN(CASH) Nibble mode precnarge time t NP 15 15 15 20 ns thN(CAS-RAS) Nibble mode RAS naid time , IMPEDANCE STATE J tw( rash) / th(RAS-R) lh(cas-r vjis(cas) DATA VALID V ROW ADDRESS Write Cycle , < cas) Vol thccAS-n) ¡su< r-cas) twn(cash) < DATA VALID tdis(cas) taN(cAs) >-Q tti(cas-r) thN(CASRAS) twn(casl) a th(cas-r) ^suc r-cas) tdis(cas) tant cas) DATA VALID ^ ^ DATA VALID ^
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OCR Scan
MH51304JA-85 MH51304JA-12 MH51304JA-15 ncwd tcbw 524288-WORD MH51304JA MH5I304JA-85 MM51304 JA-10

a7y transistor

Abstract: a7x transistor tsu(R-CAS) 0 0 ns tRRH tRCH th(RAS-R) th(CAS-R) 0 0 0 0 ns ns tRCD , of December 12, 1997 8) In Read cycle either th(RAS-R) or th(CAS-R) must be kept. 10 , VIL th(RAS-R) th(CAS-R) tsu(R-CAS) tCA -RASH W VIHAAAAAAAAAAAAAA AAAAAAAAAAAAAA VIL , ) tw(CASH) th(CAS-R) tsu(R-CAS) VIH AAAAA VIL AAAAA AAAAA AAAAAA AAAAAA AAAAAA th(RA , AAA tCASL-QX ta(G) th(CAS-R) AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA tsu(CA -CAS
Zentrum Mikroelektronik Dresden
Original
UD61464 a7y transistor a7x transistor transistor a7y tv pattern generator UD61464DC PDIP18 D-01109 D-01101

a7y transistor

Abstract: tsu a7y 80 20 tRCS tRRH tRCH tsu(R-CAS) th(RAS-R) th(CAS-R) 0 0 0 0 0 0 tRCD tCSH , ) t a(CAS) is valid. 8) In a READ cycle either th(RAS-R) or th(CAS-R) must be kept. These , ) AAAAAAAAAA AAAAAAAAAA AAAAAAAAAA ta(CA) tCASL-QX th(RA S-R) th(CAS-R) tsu(R-CA S) th(CAS-R) th(CAS-R) ta(CASH) AAAAA AAAAA AAAAA tv(CAS) tv(CA S) ta(CASH) 378 December 12
Zentrum Mikroelektronik Dresden
Original
UD61256 tsu a7y soj20 Package PDIP16 SOJ20/26

UD61464DC

Abstract: 65536X4 tsu(R-CAS) 0 0 ns tRRH tRCH th(RAS-R) th(CAS-R) 0 0 0 0 ns ns tRCD , of December 12, 1997 8) In Read cycle either th(RAS-R) or th(CAS-R) must be kept. 10 , VIL th(RAS-R) th(CAS-R) tsu(R-CAS) tCA -RASH W VIHAAAAAAAAAAAAAA AAAAAAAAAAAAAA VIL , (CA SH) tw(CASH) th(CAS-R) tsu(R-CAS) VIH AAAAA VIL AAAAA AAAAA AAAAAA AAAAAA AAAAAA , AAA tCASL-QX ta(G) th(CAS-R) AAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAA tsu(CA -CAS
Zentrum Mikroelektronik Dresden
Original
65536X4 RW100-50 A7X k

transistor a7y

Abstract: a7y transistor 80 20 tRCS tRRH tRCH tsu(R-CAS) th(RAS-R) th(CAS-R) 0 0 0 0 0 0 tRCD tCSH , ) t a(CAS) is valid. 8) In a READ cycle either th(RAS-R) or th(CAS-R) must be kept. These , ) AAAAAAAAAA AAAAAAAAAA AAAAAAAAAA ta(CA) tCASL-QX th(RA S-R) th(CAS-R) tsu(R-CA S) th(CAS-R) th(CAS-R) ta(CASH) AAAAA AAAAA AAAAA tv(CAS) tv(CA S) ta(CASH) 10 December 12
Zentrum Mikroelektronik Dresden
Original
NS10000 tca 680 UD61256DC

5M42

Abstract: 4257AP 150 Max 160 0 0 10 0 U nit t CR t s u (R-CAS) t h (CAS-R) t h (R A S -R ) td iS ( C A S ) ta ( C , ns ns ns ns ns Either t h (r a s -R) or (CAS-R) muSt be satisfied fo r a read cycle. tdis(CAS) max , time t NC Z > o ns ns ns ns ns ns ns ns ns ns t NCAS t NP t NRSH t NCWO t NCRW t NCWL t NWSH t
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OCR Scan
4257AP 5M42 4257A 16P4H

VIM-878-DP

Abstract: 202-B 12 A * 2,00 ru o o l-O ° CD à o +l < ^ CD . O > X ru z o in o ~~i r MAX 1,00 -52,00 + 0,20- - MIN VA 48,00- - PITCH 5.80 X 7 - 40.60- (L V,_. V,_. V,_. V,_ P,_ P._. P._. Vâ'"-> 3 m x x o (U (U x OJ w o in CD +1 CD in o if x cu o LH CD +1 O CD CO â
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OCR Scan
VIM-878-DP 202-B cf to CF 50 pin

RR 113001

Abstract: 1M16E5 Early write waveform £RC £RAS £RP MS ' £CSH CRSH _ t CRP ' CRC D CCAS UUAS, EÜAS · CASR ' - CRA , waveform £RC CRAS CRP KA5 · CRAD - CASR - CRA H ' CRAL Address UCIS Row address - CCRP - , CRSH UÜAS EUAS · tR A D CASR £R A H £a r CRAL CASC £CAH Address Column address tR W D , (write) £RC C RAS · CRP ESS £c r p £RCD CRSH CCHR UÜSS, EÜSS CRAD · £R A H - H CASR CASC ' CAR
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OCR Scan
1M16E5 RR 113001 AS4VC1M16E5 DID11-30U12-A AS4VC1M16E5-100JC AS4VC1M16E5-100TC

QFN-16

Abstract: 00.50+0.: 0.1 c A -DETAIL G 0.1 C 0.1 c A R DETAIL M PIN #1 CORNER 0.50 DETAIL A VIEW M â'"I rh 0.1 (M) C A R A 0.05® C © FREESCALE SEMICONDUCTOR, INC. ALL RIGHTS RESERVED. MRCHANI CAL OUTLINR PRINT VRRSION NOT TO SCADR TITLE: THERMALLY ENHANCEE QUAE ELAT NON-LEAEEE RACLAGE (GEN), 16 TERMINAL, 1.0 PITCH (6 X 6 X 1.98) DOCUMDNT NO: 98ASA00090D RRV: R 05 MAR 2010 CASR NOMRRR: 2086-01 STANDARD: NON-JRDRC DETAIL A 0.1 c 2.03 1.93 0.05 0.00~ I (0.20) 0.05 C SEATING PLANE T DETAIL G VIEW
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OCR Scan
QFN-16

11-1502

Abstract: Electrocube BATHTUB, TERMINALS BOTTOM h T TYPR NO. CASR .022 JB CAP VALUE VOLTAGE TOLERANCR A 5U A ± 1/2
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OCR Scan
11-1502 Electrocube

TC514402Z

Abstract: TC51440 IL 7 CASR a0~a9 IH â'"7; IL -' m rah. row address -RC -RAS f -RP V RPC \J W. Note , ) RAS CS A0-A9 WRITE OE VlH â'"' Vil â'" â  CRP vm â'"â  'IL CASR 'IH vil 1RC ' RAS Ã , lrc -rc dRAS 'ih Vil â'" *awr casr 'ih Vil 'ih 'il -' c _7 t asr trcd crad rasc trah
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OCR Scan
TC514 TC514402Z TC51440 toshiba tc51 TC514402J TC514402J/Z-80 TC514402J/Z-10 TC514402J/Z 402J/Z-8

WAAW

Abstract: NCC KY `STZSQbWdS bg^S 1 =T TWPS` ]^bWQ aS ]` Wa caSR W\ ^ZOQS eVS`S bVS`S O`S bO`USba eWbV VWUV `STZSQbWdWbg O\R Z]e `STZSQbWdWbgy OPZS b] USb abOPZS RSbSQbW]\ Pg ORXcabW\U [Of{ aS WbWdWbg{ kIVS\ Wb Wa caSR Oa b`O [WbbSR PSO[ bg^S Ob POR S\dW`]\[S 1 =T TWPS` ]^bWQ aS ]` Wa caSR W\ ^ZOQS eVS`S bVS`S Wa
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Original
WAAW NCC KY OPWZ KX-K 728163TCB 314TCB 1EPDO24

m5m4256

Abstract: MH25608-15 (CAS-R) Read hold time after CAS (Note 111 t RCH 0 0 0 0 ns th(RAS-R) Read hold time after RAS (Note , 85 100 120 150 ns Note 11 : Either th(RAS-R) or th(CAS-R) must be satisfied for a read cycle. 12
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OCR Scan
MH25608J-85 MH25608JA-85 MH25608J-10 MH25608JA-10 MH25608J-12 m5m4256 MH25608-15 MH25608-12 30N9 MH25608J12 MH25608J MH25608JA

RAS 0910

Abstract: MH25609-10 220 260 ns tsu(R-CAS) Read setup time before CAS t RCS 0 0 0 0 ' ns th (CAS-R) Read hold time , . Either th(RAS-R) or ^h(CAS-R) must be satisfied for a read cycle. 12. tdiS(CAS) max defines the time at
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OCR Scan
MH25609J-85 MH25609JA-85 RAS 0910 MH25609-10 5M4256 MH25609J-10 MH25609-12 MH25609J MH25609JA MH25609 MH256090A-85
Abstract: Max ns ns ns ns ns ns ns Unit t RAC Either th(RASR) or 'h(CAS-R) rnust be satisfied fo r a read , mode WRITE setup time before CAS t NC t NAC t NCAS t NP t NRSH t NCWD t NCRW t NCWL t NWCS 20 15 20 20 -
OCR Scan
MH25709J-85 MH25709JA-85 H25709J 25709JA 25709J-85/M H25709JA-85
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