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LC-324 Texas Instruments LC-324 CCD camera, single board with lens ri Buy
S3LP107 Coilcraft Inc NOT RoHS. LC filter, low pass, SMT ri Buy
S3LP207 Coilcraft Inc NOT RoHS. LC filter, low pass, SMT ri Buy

capacitor 15 f

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2.5 5 7.5 10 12.5 F L: 20 min L 1.5 d ø 20 mm min d 0.5 or 0.6 , request d d 0.5 or 0.6 or 0.8 e e 4 max. Max. 4.0mm L:5 1 0.05 F 1.5 3.5.3 , buyer request d 0.5 or 0.6 or 0.8 d 0.05 L:5 1 F 1.5 3.5.4 : Inside crimped long , 0.6 or 0.8 F 1.5 WANMING ELECTRONICS CO.,LTD. PAGE: 3/14 Safety Recognized Ceramic , . 20 mm min d F 1.5 L d 0.05 WANMING ELECTRONICS CO.,LTD. PAGE: 4/14 Safety ... Wanming Electronics
Original
datasheet

15 pages,
377.62 Kb

WM-S050107-C01 TEXT
datasheet frame
Abstract: Capacitance ≤1μF 1.5 to 6.8 μF 10 to 68 μF ≥100 μF Max. tan δ Dissipation Factor , CB Series Tantalum Capacitor Features: •  •  •  •  •  Lead-Free , Working Voltage Range 6.3V DC to 50V DC Nominal Capacitance Range 0.1μF to 220μF Capacitance , ) +20°C +85°C +125°C ≤1 6 4 6 6 1.5 ~ 6.8 8 6 8 8 10 8 10 10 12 10 12 12 ±10 100 ~ 680 +85°C ±15 +125°C DCL max. (μA ... Multicomp
Original
datasheet

6 pages,
366.56 Kb

capacitor 47uf 16v TEXT
datasheet frame
Abstract: Working voltage 6.3 to 50V (120Hz, +20°C) Capacitance ≤1.0ÂuF 1.5 to 6.8ÂuF 10 to , capacitor dipped type outline drawings Dimensions : Millimetres http://www.farnell.com http , Table Case Size (Maximum) A B C D E F Formats 1/2 H1 7.0 8.0 9.5 , - - 1.0 (105) - - - - B 1.5 (155) - - 2.2 (225) - A C A B 3.3 (335) A B 4.7 (475) A D C 6.8 (685) B B C D E D E F ... Multicomp
Original
datasheet

10 pages,
206.33 Kb

TEXT
datasheet frame
Abstract: 2.5 5 7.5 10 12.5 F L: 20 min L 1.5 d ø 0.05 20 mm min d 0.5 , buyer request d d 0.5 or 0.6 or 0.8 e e 4 max. Max. 4.0mm L:5 1 0.05 F 1.5 , 1 mm or bases on buyer request d 0.5 or 0.6 or 0.8 d 0.05 L:5 1 F 1.5 Unit: mm , . 0.05 F 1.5 D3 D4 D5 F 5 7.5 10 12.5 A 5 5 6.5 6.5 L d , 1 1.5 Unit: mm 3.5.6 : Outside crimped long lead ( Lead Style Code: F ) T max. Point of ... Wanming Electronics
Original
datasheet

15 pages,
379.78 Kb

WM-S050108-C01 TEXT
datasheet frame
Abstract: wires , Capacitor Thermal should be immersed in solder of Screen, , , , 350±10°C up to 1.5 to 2.0mm from , : Capacitor should be stored for 1 to 2 hrs. at 1room condition. * "room condition" Temperature: 15 to 35 , Directive 2002/95/EC 2002/95/EC). D max. T max. e 3.0 max. ød 25.0 min. 25.0 min. F±1.0 (in mm) Lead , max. T max. T max. e 5.0±1.0 3.0 max. s Marking Temp. Char. E, F 102Z 250~ 65 332Z , diameter ø8mm and under) Abbreviation ød F±0.8 5 Nominal Body Diameter ø7-8mm 5.0±1.0 (in mm ... muRata
Original
datasheet

4 pages,
98.3 Kb

marking code DEJ JIS-C-5150 102Z TEXT
datasheet frame
Abstract: CONDITION MIN. TYP. MAX. Low Boost Gain GBBELOW BBE-LOW =+15dB, f=50Hz 12.5 15 17.5 High Boost Gain GBBEHIGH BBE-HIGH =+15dB, f=10kHz 12.5 15 17.5 UNIT dB dB + + xeala , Level : -15 to 0dB(0.5dB/Step) Boost Level : 0 to +15dB(0.5dB/Step) f) BBE-Low Select Address , NJW1149A NJW1149A s PIN FUNCTION No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 , . N.C. N.C. N.C. N.C. N.C. V+ VREF CTL CTH CBL FUNCTION TruSurround Filter Capacitor 12 ... New Japan Radio
Original
datasheet

23 pages,
214.23 Kb

4ch sub woofer 5.1 surround sound dolby circuits low pass filter 400hz for subwoofer NJW1149 NJW1149AFH1 passive subwoofer passive subwoofer circuit diagram QFP64-H1 TS12 ts21 surround sound subwoofer circuits tone control subwoofer circuit diagram NJW1149A NJW1149A TS14 NJW1149A NJW1149A TS13 NJW1149A NJW1149A 5.1 sub woofer amp NJW1149A NJW1149A passive surround sound circuits NJW1149A NJW1149A TS33 NJW1149A NJW1149A NJW1149A NJW1149A NJW1149A 50hz passive low pass filter sub-woofer with 5.1 amp circuit diagram TEXT
datasheet frame
Abstract: MLCC 0805 10 6.3V F 2 TDK Cinx C3216X7R1E105K C3216X7R1E105K Capacitor 1206 1 25V F, 1 , VJ1206X104XXA VJ1206X104XXA AL-E Capacitor 1206 0.1 25V F, 1 Vishay Cin C3216X7R1E225K C3216X7R1E225K Capacitor 1206 0.1 25V F, 1 TDK Css VJ1206X123KXX VJ1206X123KXX Capacitor 1206 12nF, 25V 1 , VJ1206X104XXA VJ1206X104XXA Capacitor 1206 0.1 25V F, 1 Cin C3216X7R1E225K C3216X7R1E225K Capacitor 1206 2.2 25V F, 1 TDK Css VJ1206X123KXX VJ1206X123KXX Capacitor 1206 12nF, 25V 1 Vishay ... National Semiconductor
Original
datasheet

22 pages,
324.95 Kb

CAPACITOR 4700 CRCW1206152J vishay 1206 Dual N-MOSFET 30V 1A Dual N-MOSFET sot23 fet so-8 g 12 r LM2727 LM2737 sanyo capacitor MTC14 Si4826DY RLF7030T-4R7M3R4 TDK 1206 MLCC 12w sot 23 RESISTOR 1206 5V-350mA QGS controlLER DC 12v MOSFET 12W TDK MLCC 1206 Capacitor 47nS TEXT
datasheet frame
Abstract: With DC voltage F +30 : Within -80 % SR : Within ±15% : Within +30 % -95 SR , : Within ±20% SR : Within ±10% D. F. F : D. F.7.5% SR : D. F.4.0% (16V) D. F.1.5% (25V) I. R , . F.4.0% (16V) D. F.1.5% (25V) I. R. F : Satisfies initial requirement. 1 SR : - of initial , : D. F.7.5% Life SR : D. F.4.0% (16V) D. F.1.5% (25V) I. R. F : Satisfies initial , : Within ±10% D. F. F : D. F.7.5% SR : D. F.4.0% (16V) D. F.1.5% (25V) I. R. Dielectric ... muRata
Original
datasheet

2 pages,
17.5 Kb

DD300/DD400 TEXT
datasheet frame
Abstract: 2°C 85 ± 2°C 20 ± 2°C B, E, F 20 ± 2°C ­25 ± 3°C 20 ± 2°C 85 ± 2°C 20 ± 2°C Pre-treatment Capacitor , measurements (B, E, F). The capacitor shall firmly be soldered to the supporting lead wire and vibration which , 24 ± 2 hours at room condition2 (B, E, F). Set the capacitor for 500 +24 ­0 hours at 40 ± 2°C in 90 , condition2 for 24 ± 2 hours before initial measurements (B, E, F). Post-treatment Capacitor shall be stored , specified tolerance. B, E F B E F D.F. 2.5% D.F. 5.0% within ±5% within ±15% within ±20% 8 Soldering ... muRata
Original
datasheet

7 pages,
165.34 Kb

DE1207F103Z2K DE0505E102Z1K 472k 2kv DE1510E222Z6K DE0805B102K2K DE1607E103Z2K DE1105E472Z2K DE1307E472Z3K DE0805E222Z2K 10n capacitor DE1005F103Z1K DE0707E102Z3K hr r 102k 2kv DE0507/DE0607 HR R 472K 2KV DE0507/DE0607 de0705 DE0507/DE0607 102K 1KV CAPACITOR DE0507/DE0607 HR R 681K 2KV DE0507/DE0607 DE0605B102K1K DE0507/DE0607 472k 1kv DE0507/DE0607 hr r 681k- 1kv DE0507/DE0607 DE0507/DE0607 DE0507/DE0607 TEXT
datasheet frame
Abstract: =1kHz Vin=250mVrms, f=1kHz Vin=2Vrms, f=1kHz MIN. 1.5 -2.5 -2.5 -2.5 -2.5 -14 TYP. 3.5 0.0 , Capacitor 16 17 SDA SCL TERMINAL VOLTAGE EQUIVALENT CIRCUIT 8k 13,14,15 Vref , : Treble Level Cut Level : -15 to 0dB(0.5dB/Step) Boost Level : 0 to +15dB(0.5dB/Step) f) BBE-Low , FUNCTION 38 25 39 24 48 15 1 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 ­2­ SYMBOL FUNCTION TruSurround Filter Capacitor 3 TS3 ... New Japan Radio
Original
datasheet

24 pages,
229.59 Kb

QFP48-P1 NJW1148A TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
MULTIPOWER BCD TECHNOLOGY L6567 L6567 2/15 PIN FUNCTION PIN CONNECTION (Top view) N5 Pin Description 1 F S Temperature -40 to 150 5C L6567 L6567 4/15 ELECTRICAL CHARACTERISTCS (V S = 12V; R REF = 30K W ; C F = 100pF; T j condition the oscillator capacitor C F (at pin 12) is charged and discharged symmetrically with a current determined by capacitor C F and resistor R REF . This fixed value is called F MIN . A dead time T DT mosfet C F V S T DT TIME 0 0 0 0 7/15 L6567 L6567 Figure 2. Preheating and ignition state. Ignition mode At the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6833.htm
STMicroelectronics 20/10/2000 25.72 Kb HTM 6833.htm
13 14 15 16 Gp, POWER GAIN (dB) Gp Pout V DD = 28 V I DQ = 250 mA f = 945 MHz Power Gain vs. Output CURRENT (mA) 20 30 40 50 60 Pout, OUTPUT POWER (W) Pin = 1.5 W Vdd = 28 V f = 945 MHz 0 200 400 600 800 1000 Idq, BIAS CURRENT (mA) 30 40 50 60 70 Nd, DRAIN EFFICIENCY (%) Pin = 1.5 W Vdd = 28 V f = 945 MHz 30 40 50 60 70 80 Pout, OUTPUT POWER (W) Pin = 2 W Pin = 1 W Pin =3 W Pin = 1.5 W f = 945 MHz Vdd = (V) 0 10 20 30 40 50 Pout, OUTPUT POWER (W) Pin = 1.5 W Vdd = 28 V f = 945 MHz Capacitance vs. Drain
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7166.htm
STMicroelectronics 20/10/2000 10.44 Kb HTM 7166.htm
Capacitance (pF) Ciss Coss Crss f= 1 MHz Drain Current vs. Gate Voltage 1 1.5 2 2.5 3 3.5 4 Vgs, Gate-Source SURFACE MOUNT CERAMIC CHIP CAPACITOR C8 175-680 pF TYPE 46 STANDARD TRIMMER CAPACITOR C12 47 m F / 63 V 100 m F / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR R1,R3 1 K OHM 1 W SURFACE MOUNT CHIP 0 V V DS = 50 V 10 mA I GSS V GS = 20 V V DS = 0 V 10 m A V GS(Q) V DS = 10 V I D = 250 mA 1.5 4 V V f = 1 MHz 1000 pF C OSS V GS = 0 V V DS = 50 V f = 1 MHz 372 pF C RSS V GS = 0 V V DS = 50 V f
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7193.htm
STMicroelectronics 20/10/2000 10.33 Kb HTM 7193.htm
j 1.0 3.4 - j 1.5 SD4017 SD4017 5/7 BOARD LAYOUT C1, C19 : 33pF ATC 100B Chip Capacitor C2, C15 : 3.6pF ATC 6.0pF Gigatrim Adjustable Capacitor C20 : 10pF ATC 100B Chip Capacitor C21 : 10 m F (50V) Electrolytic Test Conditions Value Unit Min. Typ. Max. P OUT f = 860 MHz V CE = 25 V I CQ = 60 mA 30 - - W h c f = 860 MHz V CE = 25 V I CQ = 60 mA - 55 - % P G f = 860 MHz V CE = 25 V I CQ = 60 mA 7.5 9 - dB C OB VCB = 25 V f o = 1 MHz - 42 - pf IMD 3 P OUT = 30 WPEP f 1 = 860.0 MHz f 2 = 860.1 MHz - - 35 - dBc VSWR
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2868.htm
STMicroelectronics 20/10/2000 9.69 Kb HTM 2868.htm
= 860.0MHz F 2 = 860.1MHz Two Tones @ PEP-6dB each tone 10 15 20 25 30 35 40 45 50 1 10 14 16 18 20 Capacitor C21 : 10 m F (50V) Electrolytic Capacitor L9 : 4 Turns (tight) I.D. 120mil ENAM Cu 20 AWG L10 : 4 SPECIFICATIONS (T case = 25 5 C) Symbol Test Conditions Value Unit Min. Typ. Max. P OUT f = 860 MHz V CE = 25 V I CQ = 60 mA 30 - - W h c f = 860 MHz V CE = 25 V I CQ = 60 mA - 55 - % P G f = 860 MHz V CE = 25 V I CQ = 60 mA 7.5 9 - dB C OB VCB = 25 V f o = 1 MHz - 42 - pf IMD 3 P OUT = 30 WPEP f 1 = 860.0 MHz f 2
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2868-v1.htm
STMicroelectronics 02/04/1999 7.28 Kb HTM 2868-v1.htm
EFFICIENCY (%) Pin = 1.5 W Vdd = 28 V f = 945 MHz Return Loss vs. Output Power Output Power vs. Bias POWER (W) Pin = 2 W Pin = 1 W Pin =3 W Pin = 1.5 W f = 945 MHz Vdd = 28 V Idq = 250 mA Output 50 Pout, OUTPUT POWER (W) Pin = 1.5 W Vdd = 28 V f = 945 MHz Capacitance vs. Drain Voltage 0 SURFACE MOUNT CERAMIC CHIP CAPACITOR C13,C17 0.1 m F/500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR C14 10 m F/50 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C16 100 pF ATC 100B SURFACE MOUNT CERAMIC
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7166-v1.htm
STMicroelectronics 04/10/2000 9.91 Kb HTM 7166-v1.htm
Adjustable Capacitor C20 : 10pF ATC 100B Chip Capacitor C21 : 10 m F (50V) Electrolytic Capacitor L9 : 4 Typ. Max. P OUT f = 860 MHz V CE = 25 V I CQ = 60 mA 30 - - W h c f = 860 MHz V CE = 25 V I CQ = 60 mA - 55 - % P G f = 860 MHz V CE = 25 V I CQ = 60 mA 7.5 9 - dB C OB VCB = 25 V f o = 1 MHz - 42 - pf IMD 3 P OUT = 30 WPEP f 1 = 860.0 MHz f 2 = 860.1 MHz - - 35 - V I C = 2 A 15 40 100 - DYNAMIC SD4017 SD4017 2/7 0.1 1 10 0 10 20 30 40 50 DC SAFE OPERATING
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/2868-v3.htm
STMicroelectronics 25/05/2000 9.08 Kb HTM 2868-v3.htm
f= 1 MHz Drain Current vs. Gate Voltage 1 1.5 2 2.5 3 3.5 4 Vgs, Gate-Source Voltage (V) 0 5 10 MOUNT CERAMIC CHIP CAPACITOR C8 175-680 pF TYPE 46 STANDARD TRIMMER CAPACITOR C12 47 m F / 63 V 100 m F / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR R1,R3 1 K OHM 1 W SURFACE MOUNT CHIP I D = 250 mA 1.5 4 V V DS(ON) V GS = 10 V I D = 10 A 3 V G FS V DS = 10 V I D = 10 A 10 mho C ISS V GS = 0 V V DS = 50 V f = 1 MHz 1000 pF C OSS V GS = 0 V V DS =
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7193-v1.htm
STMicroelectronics 12/10/2000 9.82 Kb HTM 7193-v1.htm
oscillator capacitor C F (at pin 12) is charged and discharged symmetrically with a current set main- ly capacitor C F and resistor R REF . This fixed value is called F MIN . A dead time T DT between the (the capacitor across the lamp). The ignition phase finishes when the frequency reaches F MIN or (15/16) · T PRE . The C P capacitor is charged 15 times with the same current used to charge it by R REF , the current that charges the oscillator capacitor C F increases too. The effect is
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6833-v1.htm
STMicroelectronics 25/05/2000 24.26 Kb HTM 6833-v1.htm
945 MHz 13 15 dB h D V DD = 28 V I DQ = 100 mA P OUT = 60 W f = 945 MHz 53 60 % Load 15 16 17 18 Gain (dB) Gain Pout Vdd= 32V f= 945MHz Idq= 100mA Efficiency vs. Output Power 10 20 30 40 50 60 70 Efficiency (%) f = 945 MHz V DD = 32 V I DQ = 100 mA 10 15 20 25 MOUNT CERAMIC CHIP CAPACITOR C12,C16 0.1 m F / 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR C2,C8 0.8-8.0 pF GIGA TRIM VARIABLE CAPACITOR C13,C17 10 m F / 50 V ALUMINIUM ELECTROLITIC RADIAL LEAD
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6733-v1.htm
STMicroelectronics 13/12/2000 13.6 Kb HTM 6733-v1.htm