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Abstract: 4.7 mF + 120 mF Figure 14. Output Ripple Voltage During PFM-Mode Operation With 1-nF Feedforward , 120 mF Figure 15. Output Ripple Voltage During PFM-Mode Operation With 10-nF Feedforward Capacitor , mF 2 x 4.7 mF + 120 mF Figure 16. Output Ripple Voltage During PFM-Mode Operation With 100-nF , ) . Output Ripple Voltage During PFM-Mode Operation With Additional 120-uF Output Capacitor (C5 , During PFM-Mode Operation With 10-uH Inductance, 2 × 4.7-uF + Additional 120-uF(C5) Output Capacitor Texas Instruments
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TPS61070 4.7uH inductor 2.2uH inductor 2.2 uH Inductor Bluetooth-chipset TPS61070EVM SLVA213
Abstract: document describes the correct use of the UBA2024T half-bridge CFL driver demoboards for both 120 V and , total power drawn from the mains is about 13 W at a nominal mains voltage of 230 V (RMS); 50 Hz or 120 , Note RFUS See Note CHB1 100 nF, 200 V 6 1 J1 5 1 J2 4 CFS 10 nF 4 7 , 2-pin 1 230 V AC K1-pin 2-pin 3 D4 D3 CBUF2 See Note CHB2 100 nF, 200 V NM 2 NM , ROSC 200 k SW R8 SGND1 RC 0R SGND2 SGND3 CSW 220 nF SGND4 CVDD 10 nF COSC NXP Semiconductors
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OSRAM cfl bridge rectifier using the diode 1N4007 bridge rectifier 1N4007 SMD DIODE 1N4007 DATASHEET transistor Electronic ballast t5 13w TRANSISTOR SMD 13W UM10392 PLC-13W
Abstract: document describes the correct use of the UBA2024P half-bridge CFL driver demoboards for both 120 V and , total power drawn from the mains is about 13 W at a nominal mains voltage of 230 V (RMS); 50 Hz or 120 , See Note RFUS See Note W1 FS CHB1 100 nF, 400 V 6 1 J1 5 1 J2 4 D4 D3 CBUF2 See Note CHB2 100 nF, 400 V NM 2 NM 2 2 8 VDD VDD ROSC 200 k , 10 nF 1 J3 MKDS 1,5/2 7 6 OUT 0R UBA2024P CDV 220 pF, 500 V PGND SW NXP Semiconductors
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UM10393 PLC-18W electronic ballast 18w cfl lamp philips cfl 18W UM1039 1n4007 smd SMD Capacitor symbols DIODE IN4007
Abstract: disclaimers. MKDS 1.5/2 120 VAC 6 5 J2 J1 4 1 2 C3 150 nF 250 V T2 3 FS , demo boards for 120 V (AC) mains voltage and several circuit examples for up to 25 W UM10416 , package. The total power dissipation is approximately 25 W at a nominal mains voltage of 120 V (RMS), 60 , note AN10966 "UBA 2024B CFL ballast 100 to 120 V (AC) without voltage doubler" for detailed design , between 100 V and 120 V (RMS). The IC was intended as a cost-effective solution to drive CFL with an NXP Semiconductors
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DULUX schematic ballast T5 13W general electric cfl transistor ballast 18w cfl circuit Essential diode wb1 10n 500V capacitor UBA2024BP/BT UBA2024BP UBA2024BT
Abstract: 120 V and 230 V mains voltages and some circuit examples for up to 18 W UM10387 NXP , total power drawn from the mains is about 18 W at a nominal mains voltage of 230 V (RMS); 50 Hz or 120 , CBUF1 See Note RFUS See Note CHB1 100 nF, 200 V 6 1 J1 5 1 J2 4 6 4 7 14 CFS 10 nF 11 8 OUT 3 1 1 J3 UBA2024AT 2 1 3 MKDS 1,5/2 110 V , nF, 200 V 2 NM 2 NM 2 5 CDV 220 pF, 500 V 9 10 PGND 12 13 VDD NXP Semiconductors
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1n4007 smd NXP IN4007 SMD 1n4007 diodes SMD NXP IN4007 bridge rectifier ic DIODE SMD IN4007 philips cfl internal circuit
Abstract: ( 0.082 uF ) 100 nF ( 0.1 uF ) 120 nF ( 0.12 uF ) 150 nF ( 0.15 uF ) 180 nF ( 0.18 uF ) 220 nF ( 0.22 , ( 0.068 uF ) 82 nF ( 0.082 uF ) 100 nF ( 0.1 uF ) 120 nF ( 0.12 uF ) 150 nF ( 0.15 uF ) 180 nF ( 0.18 , ( 0.082 uF ) 100 nF ( 0.1 uF ) 120 nF ( 0.12 uF ) 150 nF ( 0.15 uF ) 180 nF ( 0.18 uF ) 220 nF ( 0.22 , uF ) 120 nF ( 0.12 uF ) 150 nF ( 0.15 uF ) 180 nF ( 0.18 uF ) 220 nF ( 0.22 uF ) 270 nF ( 0.27 , ) 56 nF ( 0.056 uF ) 68 nF ( 0.068 uF ) 82 nF ( 0.082 uF ) 100 nF ( 0.1 uF ) 120 nF ( 0.12 uF Synton-Tech
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100PF ceramic capacitor 4.7 nf 500v 1000PF 10 1KV X7R 1206 08051U 470 uf 25v NF .082 MIL-C-39014 .1uF CC-02-
Abstract: : 104 = 10 x 10 = 100 nF MULTIPLIER (nF) 1 10 100 1000 3 4 5 6 Vishay BCcomponents BFC2 2222 , 10-4 250 Vdc 20 V/us 11 V/us 7 V/us 5 V/us > 30 000 M > 10 000 s VALUE at 10 kHz 120 x 10-4 120 x , 17.5 6.0 x 12.0 x 17.5 1.1 1.5 EE. (1000) EE. (1000) EE. (1000) EE. (1000) EE. (500) EF , available 564 684 824 MF MF MF 5.0 x 11.0 x 12.5 6.0 x 12.0 x 12.5 0.87 1.15 EE. (1000) EE. (750) EF , 0.40 mm; dt = 0.80 ± 0.08 mm 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 12.0 x 22.0 x 26.0 7.8 EE. (150) EE Vishay BCcomponents
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capacitor 0.01 k 630 MKT MKT 373 EB 0.068 MF CAPACITOR MKT capacitor 373 MKT length capacitor 0.015 k 400 MKT capacitor 0.022 k 630 MKT pitch 15
Abstract: 120 V and 230 V mains voltages and some circuit examples for up to 18 W UM10388 NXP , total power drawn from the mains is about 18 W at a nominal mains voltage of 230 V (RMS); 50 Hz or 120 , WE-Bobbin EF20 D2 CBUF1 See Note RFUS See Note W1 FS CHB1 100 nF, 400 V 6 1 J1 5 1 J2 4 D4 D3 CBUF2 See Note CHB2 100 nF, 400 V 2 NM 2 NM 2 8 VDD , -pin 3 3 CFS 10 nF 1 J3 MKDS 1,5/2 7 6 OUT 0R UBA2024AP CDV 220 pF, 500 NXP Semiconductors
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E20 core G24q-2 1N4007 diode bridge schematic diagram t8 smd IN4007 SMD DATA SHEET Diodes In4007
Abstract: BCcomponents COMPOSITION OF CATALOG NUMBER TYPE AND PITCHES MULTIPLIER (nF) 10.0 mm 373 M 15.0 mm , ) CODE 10 D 15 27.5 mm F Example: 104 = 10 x 10 = 100 nF BFC2 2222 (*) 373 373 , 120 x 10-4 225 x 10-4 C > 0.47 uF 75 x 10-4 120 x 10-4 - Rated voltage pulse , x 11.0 x 12.5 0.87 6.0 x 12.0 x 12.5 1.15 0.56 Pitch = 15.0 ± 0.40 mm; dt = 0.60 ± 0.06 mm 0.56 0.68 0.82 5.0 x 11.0 x 17.5 6.0 x 12.0 x 17.5 1.1 1.5 EE. (1000) EF Vishay BCcomponents
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FL CAPACITOR 680 MF mf 824 capacitor 0.33 k 630 MKT capacitor MKT MF824 CAPACITOR
Abstract: ATA-120 20W Class D Single Channel Audio Amplifier FEATURES · · · · · · · · · · · · , · · · · · The ATA-120 Class-D Audio Amplifier is a fully integrated monolithic audio amplifier that can provide audio power up to 20 watts @ 10% THD into a 4 speaker. The ATA-120 , while still achieving class-D efficiency greater than 90%. ORDERING INFORMATION: Part Number * ATA-120 EB-120 Package Temperature SOIC8 -40°C to + 85°C Evaluation Board for the ATA-120 Apogee Technology
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ATA-120 EB-120 smd zener diode BLUE BAND zener smd diode 6.2v 1w zener 20w smd diode 1w 24v mosfet for audio 5.1 circuit p9030 mosfet 500 watts audio amplifier
Abstract: R6 220 k 1N4937 C3 100 nF R13 220 k R45 NM 120 V (RMS) R9 D9 D10 PMLL4148L , UM10409 120 V high power factor CFL reference board using the UBA2014T Rev. 1 - 12 October 2010 , , high PF, triac dimmable Abstract This user manual describes the 120 V mains dimmable Compact , Semiconductors 120 V high power factor CFL reference board Revision history Rev Date Description , October 2010 © NXP B.V. 2010. All rights reserved. 2 of 25 UM10409 NXP Semiconductors 120 NXP Semiconductors
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EE20 core POWER SUPPLY BOARD 94V0 bzv55c12v BZV55-C12V cfl circuit diagram dimmer CFL
Abstract: °C TJ, JUNCTION TEMPERATURE (°C) COUT = 1 mF CNOISE = 10 nF 20 40 60 80 100 120 140 , = 5.0 V COUT = 1 mF CNOISE = 10 nF 80 100 120 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION , GND 2 CNOISE 10 nF COUT 1 mF Figure 1. NCP700C Typical Application © Semiconductor , . (Connect 10 nF or 100 nF capacitor to GND) 4 EN Enable pin: This pin allows on/off control of the , 0.5 V or 2.5 V (whichever is greater), VEN = 1.2 V, CIN = COUT = 1 mF, CNOISE = 10 nF, IOUT = 1 mA ON Semiconductor
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511BJ NCP700C/D
Abstract: 250-204 28 W T5 C9 4.7 nF 1234 R2 470 k Ω Q2 TK5A50D R3 150 kΩ C14 L5 27 nF 120 , L6 120 μH T2C VDD C13 220 nF L3 120 μH T1C 2 V1 V10E275P chassis neutral , Q1 TK5A50D GHHB C10 22 nF D9 1N4148 D10 L2 C3 27 nF 120 μH T1B 3 1N4937 , C27 100 nF R4 1Ω C17 470 nF R5 1Ω R6 4.7 kΩ EOL SLHB VDD C18 220 n R7 680 kΩ GLHB EOL VFB IFB GHHB GLHB C19 470 nF D13 1N4937 R9 1.5 Ω 5 NXP Semiconductors
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specifications of 1n4007 diode 1N4007 diode information 1N4937 diode UM10564 UBA2017DB1064 UBA2017P
Abstract: MainsN 1 4 2 C8 10 nF 250V R17 560 kΩ R5 470 kΩ L 120 V (AC) C2 330 nF , C2 330 nF 450V C1 100 nF 450 V UM10692 NXP Semiconductors SSL2109ADB1105 - 120 V/18 W , UM10692 SSL2109ADB1105 - 120 V/18 W PAR38 high PF isolated LED driver demo board Rev. 1 â'" 9 , converter, high PF, PAR38 Abstract This document describes the operation of a 120 V/18 W non-dimmable , ) applications UM10692 NXP Semiconductors SSL2109ADB1105 - 120 V/18 W PAR38 high PF isolated LED driver NXP Semiconductors
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SSL2109A PAR30 10-LED
Abstract: · · · · · · · 124 120 nF · · · · · · 154 150 nF · · · · · · 184 180 nF · · · · · 224 220 nF · · · · , · · · 823 82 nF · · · · · 104 100 nF · · · · · 124 120 nF · · · · · 154 150 nF · · · · · 184 180 nF , 683 68 nF · · · · · · 823 82 nF · · · · · · 104 100 nF · · · · · · 124 120 nF · · · · · 154 150 nF · · , · · · · · · · · 823 82 nF · · · · · · · · 104 100 nF · · · · · · · 124 120 nF · · · · · · · 154 150 , Range: 10 pF to 47 nF Voltage Range: 50 VDC to 3000 VDC Temperature Coefficient of Capacitance (TCC): 0 Vishay Vitramon
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2002/95/EC
Abstract: , VOUT = 2.8 V 180 CIN = COUT = 1 mF, Cnoise = 10 nF 120 VDO, DROPOUT VOLTAGE (mV) VDO , 160 200 150 CIN = COUT = 1 mF, Cnoise = 10 nF 120 TJ = 25°C 90 TJ = 125°C 60 TJ = , . PSRR vs. Frequency, 1.8 V Output Voltage Option, COUT = 1 mF, Cnoise = 10 nF 120 110 IOUT = 10 mA , , VOUT = 3 V, COUT = 1 mF, Cnoise = 100 nF Thermal Shutdown 20 40 60 80 100 120 140 160 180 200 , 10 nF 30 20 40 60 80 100 120 140 160 180 200 IOUT, OUTPUT CURRENT (mA) IOUT ON Semiconductor
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18082 al NCV8570B NCV8570B/D
Abstract: V 16 100 16 75 Ripple rejection V| = 6Vto20V, f = 120 Hz 25 °C 42 51 43 51 dB Output voltage , must be taken into account separately. All characteristics are measured with a 0.33-nF capacitor across the input and a 0.1 -n.F capacitor across the output, t This specification applies only for dc , 8 V to 18 V, f = 120 Hz 25°C 40 49 41 49 dB Output voltage regulation lO = 1 mAto 100 mA 25°C 15 , characteristics are measured with a 0.33-nF capacitor across the input and a 0.1 -n.F capacitor across the output -
OCR Scan
HA78L02ACD HA78L05CD HA78L05ACLP 78l05c A78L15 78L05QLP A78L la78 A78L00 SLVS01 1976-REVISED HA78L02CD HA78L02ACLP
Abstract: 1 mF, Cnoise = 10 nF -20 0 20 40 60 80 100 120 Figure 3. Output Voltage vs. Junction Temperature , VIN = 3.3 V, CIN = COUT = 1 mF, Cnoise = 10 nF 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C , 3.00 2.98 2.96 2.94 -40 -20 0 20 40 VIN = 3.5 V, CIN = COUT = 1 mF, Cnoise = 10 nF 60 80 100 120 TJ , = 1 mF, Cnoise = 10 nF TJ = 25°C TJ = 125°C 40 80 120 160 200 Figure 6. Output , , VIN = 2.5 V, Cnoise = 100 nF, dIOUT/dt = 200 mA / 1 ms 40 80 120 160 200 240 280 320 360 400 t, TIME ON Semiconductor
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amplifier marking ADK 506BA AEC-Q100
Abstract: 1 mF, Cnoise = 10 nF -20 0 20 40 60 80 100 120 Figure 3. Output Voltage vs. Junction Temperature , VIN = 3.3 V, CIN = COUT = 1 mF, Cnoise = 10 nF 60 80 100 120 TJ, JUNCTION TEMPERATURE (C) Figure , 3.00 2.98 2.96 2.94 -40 -20 0 20 40 VIN = 3.5 V, CIN = COUT = 1 mF, Cnoise = 10 nF 60 80 100 120 TJ , 1 mF, Cnoise = 10 nF TJ = 25C TJ = 125C 40 80 120 160 200 Figure 6. Output Voltage , 3.15 3.10 0 40 COUT = 4.7 mF, VIN = 3.8 V, Cnoise = 100 nF, dIOUT/dt = 200 mA / 1 ms 80 120 160 200 240 ON Semiconductor
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Abstract: 6W · · · · · · · PO - Output Power - W 160 140 120 100 80 60 8W 4W APPLICATIONS · · · , 470 nF. Output AD modulation, switching frequency > 350 kHz 0 10.8 10.8 4.6 2.5 5 5 5 192 0 TYP 50 12 , 160 120 165 125 0.2% 0.09% 140 85 102 112 102 MAX UNIT W PO Power output per channel, DKD , 4W 0.2 0.1 0.05 0.02 0.01 0.005 20m 100m 200m 1 2 10 20 100 300 8W 6W 160 140 120 100 80 60 40 20 , ) - W Figure 1. UNCLIPPED OUTPUT POWER vs SUPPLY VOLTAGE 180 170 TC = 75°C 160 6W 150 140 130 120 Texas Instruments
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TAS5162 SLES194D TAS5518
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