500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

c3225 transistor

Catalog Datasheet MFG & Type PDF Document Tags

1N4148 SMD

Abstract: diode 1N4148 SMD ) C3225[1210] Cap Pol (CTS 10M/6.3V B) GM Electronic 907-109 (CTS 10M/6.3V B) C8, C13 1.5nF , Header 1X1 GM Electronic 832-017 (S1G20) Q1 BC857B PNP General-purpose Transistor SOT
-
Original
1N4148 SMD diode 1N4148 SMD TRANSISTOR C3225 TRANSISTOR SMD p1 resistor SMD footprint smd transistor p5 TDE1708DFT B37941A1103K0 B37941A5104K0 B37931A5103K0 B37931K0104K0 B37931A5152K0

TRANSISTOR C3225

Abstract: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm â'¢ High DC current gain: hFE = 500 (min) (IC = 400 mA) â'¢ Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base , Fall time tf IB1 = â'IB2 = 1 mA, duty cycle ≤ 1% 1 2004-07-07 2SC3225 Marking C3225
Toshiba
Original

TRANSISTOR C3225

Abstract: c3225 transistor 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm · · High DC current gain: hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage , 3.0 µs VCC = 30 V Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% 1.2 Marking C3225
Toshiba
Original
c3225 transistor C3225 npn

TRANSISTOR C3225

Abstract: c3225 transistor 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage , s VCC = 30 V Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% Marking C3225 Part No
Toshiba
Original
2sc3225 transistor

TRANSISTOR C3225

Abstract: c3225 transistor 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO , Marking C3225 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or
Toshiba
Original
DSA00428678

TRANSISTOR C3225

Abstract: C3225 npn 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage , s VCC = 30 V Fall time tf IB1 = 1 mA,IB2 = 1 mA duty cycle 1% Marking C3225
Toshiba
Original

schematic diagram dc-ac inverter sg3525

Abstract: sg3525 application note windings by the conduction of a transistor, the reflected voltage across the other primary winding puts the drain of the off state transistor at twice the input voltage with respect to ground. This is the , by an internal P-channel DMOS transistor and few external components. In this way, it is possible to , , 25 V SMD X7R ceramic cap. C3225 series; size 1210 TDK C14 47 µF, 35 V SMD tantalum , Power BJT 30 V, 3 A transistor- SOT-32 STMicroelectronics Q10 2SD882 NPN Power BJT 30 V, 3 A
STMicroelectronics
Original
AN2794 schematic diagram dc-ac inverter sg3525 sg3525 application note DC-AC inverter sg3525 schematic diagram battery charger sg3525 sg3525 STP160N75F3

L5973d application note

Abstract: TRANSISTOR C3225 transistor. It does not require a bootstrap capacitor, and the duty cycle can range up to 100%. An internal , Figure 7. The output power PDMOS transistor is split into two parallel PDMOS transistors. The smallest , Manufacturer Series Capacitor value (µ) Rated voltage (V) TDK C3225 10 25 GRM32 10
STMicroelectronics
Original
AN1518 L5973D L5973d application note L5973D equivalent GRM55 595D D98IN955

L5973D equivalent

Abstract: c3225 transistor realized in BCDV technology and the power switching element is realised by a P-Channel D-MOS transistor , PDMOS transistor is split in two parallel PDMOS. The smallest one has a resistor in series, RSENSE. The , Cap value (µ) Rated voltage (V) C3225 10 25 GRM32 10 25 GRM55 10 50
STMicroelectronics
Original
DO3316

85T03GH

Abstract: L1085DG : ADDED BC846BM NPN TRANSISTOR (APN 372S0129) TO MCP T-DIODE SENSOR CIRCUIT SIMILAR TO - CORRECTED BOM
-
Original
85T03GH L1085DG L1117LG pc890 C3209 transistor transistor C3795 LGA-775 CK-505 IDTCV174PVG SLG84516S 100MH 200/266MH