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LTC3225EDDB-1#PBF Linear Technology LTC3225 - 150mA Supercapacitor Charger; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC3225EDDB-1#TRPBF Linear Technology LTC3225 - 150mA Supercapacitor Charger; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC3225EDDB#PBF Linear Technology LTC3225 - 150mA Supercapacitor Charger; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC3225EDDB#TRMPBF Linear Technology LTC3225 - 150mA Supercapacitor Charger; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC3225EDDB#TRPBF Linear Technology LTC3225 - 150mA Supercapacitor Charger; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC3225EDDB-1#TRMPBF Linear Technology LTC3225 - 150mA Supercapacitor Charger; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

c3225 transistor

Catalog Datasheet MFG & Type PDF Document Tags

1N4148 SMD

Abstract: diode 1N4148 SMD ) C3225[1210] Cap Pol (CTS 10M/6.3V B) GM Electronic 907-109 (CTS 10M/6.3V B) C8, C13 1.5nF , Header 1X1 GM Electronic 832-017 (S1G20) Q1 BC857B PNP General-purpose Transistor SOT
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1N4148 SMD diode 1N4148 SMD TRANSISTOR C3225 TRANSISTOR SMD p1 resistor SMD footprint smd transistor p5 TDE1708DFT B37941A1103K0 B37941A5104K0 B37931A5103K0 B37931K0104K0 B37931A5152K0

TRANSISTOR C3225

Abstract: 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm â'¢ High DC current gain: hFE = 500 (min) (IC = 400 mA) â'¢ Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base , Fall time tf IB1 = â'IB2 = 1 mA, duty cycle ≤ 1% 1 2004-07-07 2SC3225 Marking C3225
Toshiba
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TRANSISTOR C3225

Abstract: c3225 transistor 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm · · High DC current gain: hFE = 500 (min) (IC = 400 mA) Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage , 3.0 µs VCC = 30 V Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% 1.2 Marking C3225
Toshiba
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c3225 transistor C3225 npn

TRANSISTOR C3225

Abstract: c3225 transistor 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage , s VCC = 30 V Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% Marking C3225 Part No
Toshiba
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2sc3225 transistor

TRANSISTOR C3225

Abstract: c3225 transistor 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO , Marking C3225 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or
Toshiba
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DSA00428678

TRANSISTOR C3225

Abstract: C3225 npn 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm · High DC current gain: hFE = 500 (min) (IC = 400 mA) · Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage , s VCC = 30 V Fall time tf IB1 = 1 mA,IB2 = 1 mA duty cycle 1% Marking C3225
Toshiba
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schematic diagram dc-ac inverter sg3525

Abstract: sg3525 application note windings by the conduction of a transistor, the reflected voltage across the other primary winding puts the drain of the off state transistor at twice the input voltage with respect to ground. This is the , by an internal P-channel DMOS transistor and few external components. In this way, it is possible to , , 25 V SMD X7R ceramic cap. C3225 series; size 1210 TDK C14 47 µF, 35 V SMD tantalum , Power BJT 30 V, 3 A transistor- SOT-32 STMicroelectronics Q10 2SD882 NPN Power BJT 30 V, 3 A
STMicroelectronics
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AN2794 schematic diagram dc-ac inverter sg3525 sg3525 application note DC-AC inverter sg3525 schematic diagram battery charger sg3525 sg3525 STP160N75F3

L5973d application note

Abstract: TRANSISTOR C3225 transistor. It does not require a bootstrap capacitor, and the duty cycle can range up to 100%. An internal , Figure 7. The output power PDMOS transistor is split into two parallel PDMOS transistors. The smallest , Manufacturer Series Capacitor value (µ) Rated voltage (V) TDK C3225 10 25 GRM32 10
STMicroelectronics
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AN1518 L5973D L5973d application note L5973D equivalent GRM55 595D D98IN955

L5973D equivalent

Abstract: c3225 transistor realized in BCDV technology and the power switching element is realised by a P-Channel D-MOS transistor , PDMOS transistor is split in two parallel PDMOS. The smallest one has a resistor in series, RSENSE. The , Cap value (µ) Rated voltage (V) C3225 10 25 GRM32 10 25 GRM55 10 50
STMicroelectronics
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DO3316

85T03GH

Abstract: L1085DG : ADDED BC846BM NPN TRANSISTOR (APN 372S0129) TO MCP T-DIODE SENSOR CIRCUIT SIMILAR TO - CORRECTED BOM
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85T03GH L1085DG L1117LG pc890 C3209 transistor transistor C3795 LGA-775 CK-505 IDTCV174PVG SLG84516S 100MH 200/266MH