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LTC1385IN Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: PDIP; Pins: 18; Temperature Range: -40°C to 85°C
LTC1385ISW#TR Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: -40°C to 85°C
LTC1385CSW#PBF Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: 0°C to 70°C
LTC1385IG Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SSOP; Pins: 20; Temperature Range: -40°C to 85°C
LTC1385CG#PBF Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SSOP; Pins: 20; Temperature Range: 0°C to 70°C
LTC1385CSW#TRPBF Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: 0°C to 70°C

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Part : 74AHC138T16-13 Supplier : Diodes Manufacturer : Avnet Stock : - Best Price : $0.0722 Price Each : $0.0852
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c138 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: board has to be modified for the use with the SP5659 + BC847 external transistor at pin 16. Normally , noise behaviour. A C1 100nF C1 R1 22k R2 8.2k C2 2.2nF C138 15pF C10 1 100nF C11 18pF C138 15pF TR101 *BSN20 C3 XnF_0805 16 R121 X1 4MHz n.m. IC1 , Fig.5 Phase Noise performance SP5659 + BC847 transistor at fvco = 950 MHz and Icp = 555 uA 11 , .7 Phase Noise performance SP5659 + BC847 transistor at fvco = 1350 MHz and Icp = 120 uA 12 Philips Philips Semiconductors
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TSA5059 AN99024 TSA5059T OM5729 TDA8060TS TDA8083H application note ic 555 free IC 555 TDA8083 PR39233
Abstract: VDD VDD VDD VDD VDD VDD VDD VDD VDD VDD VDD VDD VDD VDD VDD VDD VDD POWE R C138 , C138 C139 C140 C141 C142 10nF 100nF 1uF 2.2uF 100nF 10nF 1uF 100nF , VCC-CORE VREF VCC-ADC VCC-3.3V FP9 C134 C135 C136 C137 C138 C139 C140 , C128 C129 C130 C131 C132 C133 C134 C135 C136 C137 C138 C139 C140 , -5V C139 100nF PORT S VDDA GNDA C138 2.2uF VCC-3.3V PORT P VDDC VDDC C137 MikroElektronika
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TM4C129L
Abstract: 1 C138 E 750 DNP 2 L102 SR_A IN 3.3UH Application Note 1341 LLN , Capacitor C137, C138 2 DNP 5% DNP 805 GENERIC Multilayer Capacitor (DNP) C123 , PMBT3906 Q17 1 SOT Philips -40V 200mA PNP Switching Transistor PS2701-1 U2, U6 2 , R16 C14 C4 + TP120 D2 R150 Q111 R40 Q113 R37 C138 Q4 8 TP118 + , R150 Q111 R40 Q113 R37 C138 Q4 8 TP118 + 9 + Q3 C2 C121 + R27 Intersil
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ISL6752 1500W Power Amplifier PCB Layout smd transistor SRS transisTOR C123 transistor c124 ic q110 AC Transformer 50A 100V inductance ISL6752EVAL1Z AN1341 450VDC 425VDC AN1262
Abstract: ,C125,C126, C127,C128,C133,C134,C135, C136,C137,C138,C139,C140 C144,C145,C236 C146 D7,D1,D16,D17 D2,D3 , CONN SMT-2x25 IDE CONN DAQ HEADER MICTOR MICTOR SHROUDS 60-PIN TIP CONN TH-60 TRANSISTOR TO-220 Heat Sink TO-220 PNP TRANSISTOR SOT-23 NPN TRANSISTOR SOT-23 RN 220-8B ElanSC520 Microcontroller CDP Advanced Micro Devices
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transistor C143 C144 transistor c225 diode smd transistor C144 Transistor c233 c143 transistor SC520 74ALVCH16245DGG 29LV017B-70REC IS61C6416-15T 29F040B-90PC TC4S01F
Abstract: more efficient than com parable bipolar transistor modules, while at the sam e time having the , . 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-138 4855452 00m 2fl -
OCR Scan
CPU165MF C-139 46S545E C-140 55M52
Abstract: NPN SILICON TRANSISTOR SWITCHING DIODE Dual N/P channel FET NPN SILICON TRANSISTOR PART NAME SP3243E , , C137,C138,C139 C11,C12,C13,C14,C25,C26,C93,C94, C125,C126,C127,C128 C63,C66,C86,C87,C88,C89,C112 VC1 -
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transistor L43 SMD transistor NPN C124 samsung u2 cable smd diode L43 c124 npn DIODE C136 BA61-00728A BA66-00044A BA66-00043A BA72-00679A BA72-00678A BA72-00663A
Abstract: NPN SILICON TRANSISTOR SWITCHING DIODE Dual N/P channel FET NPN SILICON TRANSISTOR PART NAME SP3243E , , C137,C138,C139 C11,C12,C13,C14,C25,C26,C93,C94, C125,C126,C127,C128 C63,C66,C86,C87,C88,C89,C112 VC1 -
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SMD Transistor t08 transistor SMD t07 transistor SMD t06 transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 BA72-00662A BA72-00666A BA72-00665A BA72-00664A BA64-00196A BA72-00639A
Abstract: adding an external high voltage transistor. The measurements are done on the 5V and 28V supply voltages , high voltage transistor application change. The board is originally intended to be used with the , adding an external high voltage npn transistor BC847B. Pin 16 of the SP5659 should be lifted from the pcb and connected directly to the base of the external transistor. See Figure 3 on the next page. Please take care that the connections of the transistor to ground and the IC are as short as possible Philips Semiconductors
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lm317 smd L3 LM317 voltage regulator TDA8060 r60 mkt IC1 LM317 transistor SMD p102 TSA5059T/C1 AN99019 PR39232 BB835
Abstract: efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive , . Instantaneous Forward Current C-138 1000 CPU165MF 100 140 VR = 200V TJ = 125°C TJ = 25°C VR International Rectifier
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c136 transistor C136-10
Abstract: of the transistor geometry and the wire bonds. 2. The second breakdown effect which occurs whenever , t M icro te ch n o lo g \ C orp C138 PA51M APE X M I C R O T E C H N O L O G Y C ORP OR -
OCR Scan
aplx PA51A OPA501 500SJ 500S2
Abstract: Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules , Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-138 International Rectifier
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ge c137
Abstract: transistor geom etry and the wire bonds. 2. The second breakdown effect which occurs w henever the sim , " section of the handbook for current limit adjust details. C138 PA 51U R EV . J N O V EM B E R 1994 -
OCR Scan
C136H EM- 546 motor 546-APEX
Abstract: C129 C130 C131 C132 C133 C134 C135 C136 C137 C138 C139 C140 C141 C142 C143 C144 C145 C12 C20 C23 , -767054-1 3 Pin HDR Str 0.1"(Cut from 36 way strip) MTD20N03HDL TRANSISTOR Thick Film 0.1W 0805 1% 3K3 -
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SMR0805 AMD29BDD160 transistor SMD p41 HDR 5X2 rpack 10k sog0508wg244l200 Header 18X2 TPSE227K10R0100 100UF MBRS340 MBRS360 BAW56 115OHM
Abstract: . WE-MI 1206 lOuH 0 1 130115 Transistor FET n-Channel 2N7002 Ql Q2,Q3,Q4,Q5,U35,U36 7.00 www.rutronik.com case:SOT23 RoHS Rutronik AG EUR PANJIT 2N7002-7-F Transistor SOT 23 0 1 303300 Widerstand SMD 0R , C135C136,C137,C138,C139 case: www. 5.00 0603,4.7pF, 50V, 10%, NPO EFCO 0 2 202201 P.O.BOX 3 -
OCR Scan
C1608NP0101JGT V10G-PB17 0603WAJ0103T5E CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p CL10F105Z08NNNC SLSLLI33 SL-S-D-12 CH-4542 811060-VO 811060-V0 MSEBX800
Abstract: with rating methods used by transistor manufacturers and gives conservative results. Rating delivered , transistor geometry and the wire bonds. 2. The second breakdown effect which occurs whenever the simultaneous , follows at Tr = 25°C: Where: R F0 is in K ohms. (5) V o . 0.14 10.14 + R FD ( 6) C138 P A I ?IJ -
OCR Scan
Apex U Tech pa12 PA12A PA12H PA12M
Abstract: AGND rather than +5VA if PC_SPKR is driven by a gate or buffer rather than a transistor 1 C122 , AD3 AD1 C138 Y5V 0.1uF Side A PCI_BUS_5V_A + C139 ELEC 10uF -12V TCK GND11 TDO , ,C71,C80,C 107,C111,C12 2,C132,C136, C137,C138,C1 40 C13,C14,C59, C62 C15,C16,C17, C18,C19 C24 Cirrus Logic
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EVQ-PHP03T 6.3mm Stereo jack pinout how to reset ATMEL 24C04 joystick schematic IC 24C04 ECE-V1AA101P C143 T transistor CRD4610-1 CS4610 CS4297 DS241RD1C1 1/16W 1/10W
Abstract: 0 b) C137, C138, C140, C141, C142, C143, C144, CAP, SMD, 0402, 0.1ÂuF, 16V, 10%, X7R, ROHS , MURATA NCP18WM474J03RB-T 2 Q1, Q14 TRANSISTOR, N-CHANNEL, 3LD, SOT-23, 60V, 115mA, ROHS Intersil
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SMD FET j11 PT44P18-6401 TP4-TP28 ISL95816EVAL7Z ISL95816 ISL95816A AN1898 ISL95835EVAL1Z
Abstract: 014 C-138 EPSON E0C623E E0C62L3E (OSCI CR oscillation circuit) (Unless otherwise specified , _ Piezo Buzzer Single Terminal Driving (Piezo buzzer driving through PNP transistor) X'tal Rc r -
OCR Scan
ci 4548 PF736-04 E0C6200A E0C62A3E QFP5-80 QFP14-80 0003G
Abstract: outputs: relay, transistor, BCD, linear, or communications. · Prescale function available, which , : SPDT) T1: 5 comparative transistor outputs (NPN open collector) T2: 5 comparative transistor outputs (PNP open collector) B2: BCD output (NPN open collector) (see note) B4: BCD output + 5 transistor , note) Linear output (1 mV/10 digits) (see note) Linear output, 4 to 20 mA + 5 transistor outputs (NPN open collector) L5: Linear output, 1 to 5 V + 5 transistor outputs (NPN open collector) L6: Linear OMRON
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EN61010-1 IEC1010-1 C144 DIGITAL NPN TRANSISTOR SWITCHING TRANSISTOR C144 K3NC-NB1A C144* transistor XM2A-3701 TRANSISTOR BCD 109 C-153
Abstract: transistor (Q2 for OUTA1) is determined by the resistor-divider formed between the collector-emitter , the attenuation will be for a given transistor. The trade off is that a high output impedance is not , . The same resistor that affects the transistor mute level also affects the HPF formed with the output , C110 C113 C114 C117 C120 C124 C127 C134 C137 C138 C144 C145 C150 C159 C160 C161 C162 C167 C173 C175 , TRANSIENT SUPPRESSOR, 6.8V TRANSISTOR, NPN, EPITAXIAL TYPE, SC59 TRANSISTOR, PNP SILICON SMT WITH Cirrus Logic
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5361bs 5361as cdb 442 4816P-001-472 circuits rca to optical converter 5361asdat CDB42528 CS42528/26 CS5361 CS42528 CS8406 AES-192
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