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Part Manufacturer Description PDF & SAMPLES
X9C102ST1 Intersil Corporation 1K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 100 POSITIONS, PDSO8, PLASTIC, SOIC-8
X9C102SZT2 Intersil Corporation 1K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 100 POSITIONS, PDSO8, GREEN, PLASTIC, SOIC-8
X9C102ST2 Intersil Corporation 1K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 100 POSITIONS, PDSO8, PLASTIC, SOIC-8
X9C102W Intersil Corporation Digitally Controlled Potentiometer (XDCP™); PDIP8, SOIC8; Temp Range: See Datasheet
X9C102SIT1 Intersil Corporation 1K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 100 POSITIONS, PDSO8, PLASTIC, SOIC-8
X9C102PM Intersil Corporation 1K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 100 POSITIONS, PDSO8, PLASTIC, SOIC-8

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c102 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: POS D1 D2 FL1a TX1 LK1 C102 R1 D3 NEG POS R13 D6 CamSemi C103 , Collector Connection Red Loop ­ Primary Current Path L1 C102 Figure 3: Current Sense Resistors , C102 R13 D6 Figure 4: Q1 Collector Path Green Loop ­ Emitter / Base Path The emitter path , D3 C102 R1 R13 D6 CamSemi C103 Figure 5: Emitter / Base Path PCB Design Page 2 , . These are shown in purple in Figure 1 and described below. VDD Decoupling FL2a Q1 C2 C102 Cambridge Semiconductor
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AN-3185 IPC-2221A IEC60617 AN-3185-0906 c103 TRANSISTOR transistor c102 transistor C103 c103 TRANSISTOR DATA c102, transistor IPC-7351A IEC60950-1 IEC61000
Abstract: Triac is turned ON as a result of transistor Q1 biased ON via the resistor ladder R3,R4 and zener diode , starts. When the input voltage reaches typically 155V,transistor Q2 is biased ON via resistor ladder R6,R7 and zener DZ2 which pulls low the R4 and DZ1 connection switching OFF transistor Q1 in-turn , 50VAC transistor Q2 and Q4 are biased OFF turning Triac ON allowing voltage doubler rectification. The , resistors 100K ohms 2W R105 M 100K ohms 2W C102 Electrolytic capacitor 390uF 2Ì0V . C103 o 390uF 26OV -
OCR Scan
c103 TRANSISTOR equivalent TRANSISTOR c105 MK1210 c105 TRANSISTOR transistor c107 m c103 m TRANSISTOR 00D43AA 200VAC 2606C
Abstract: VBST Brake control W C102 OP1IN(-) 2 C114 48 POR (L: RESET) R103 POR delay , the value of external filter capacitor C101, C102. To get the maximum driving efficiency of the , 33 UFLT C102 Vpss 28 32 NFLT C103 C114 29 FLTOUT CT 25 Vss U 20 R110 , C101, C102 - Pre-filter of B-EMF amplifier 10 C103 - Filter of PWMDAC for current , get the maximum driving efficiency for spindle motor, the capacitor C101, C102 should be chosen as Hitachi Semiconductor
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HA13614FH TESTING A c114 transistor transistor c114 Hitachi motor driver C116 transistor c112 TRANSISTOR ADE-207-246D FP-48T 12VGOOD D-85622
Abstract: OTSD CLK EXTCOM W C102 OP1IN(-) 2 C114 48 POR (L: RESET) R103 POR delay , the value of external filter capacitor C101, C102. To get the maximum driving efficiency of the , 33 UFLT C102 Vpss 28 32 NFLT C103 C114 29 FLTOUT CT 25 Vss U 20 R110 , C101, C102 - Pre-filter of B-EMF amplifier 10 C103 - Filter of PWMDAC for current , motor, the capacitor C101, C102 should be chosen as following equation. C101 = 0.8 C102 (17-1) C102 Hitachi Semiconductor
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C102 M transistor c103 K transistor c114 diagram transistor c116 C115 HDD spindle motor circuit
Abstract: Transistor 8 W, 700 ­ 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers , TL108 3 R104 10 Ohm 3 4 In Out 2 1 NC NC 3 6 7 5 C102 1000 , Circuit, 920 ­ 960 MHz (cont.) R101 C103 C101 VDD C102 C205 R102 R103 C204 S4 , LDMOS Transistor PCB LTN/PTFA220081M­9 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz Infineon Technologies
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c106 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 p 4712 capacitor marking c106 tl113 PG-SON-10
Abstract: Functions to eliminate supply voltage ripple. Use a capacitor over 100/uF. (2) C102 Input coupling capacitor. Consider the input impedance in determining C102- (3) C103 Determine C103 from the value of , ) in power transistor at no signal. Iidle is approximately 4mA in a steady state, R102 = Refer to -
OCR Scan
HA1306W c104 TRANSISTOR TRANSISTOR C107 HA1306 transistor c106 c107 TRANSISTOR C102- HA130GW
Abstract: Transistor 12 W, 700 ­ 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended , C102 20 pF Reference circuit input schematic for = 877 MHz C201 2200000 pF TL209 TL204 , C101 C103 R101 R102 L2 C205 C203 C204 C104 C102 RO4350, .020 PTFA220121M (73 , /PTFA220121M­8 Component LDMOS Transistor 0.508 mm [.020"] thick, r = 3.48 Rogers 4350 1 oz , ATC100A680JW150X C102 Chip capacitor, 20 pF ATC ATC100A200JW150X C103 Chip capacitor, 10 pF Infineon Technologies
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TRANSISTOR C802 TL2262 atc100a smd transistor bd 37 ATC100A100JW150X C102 M
Abstract: Transistor 4 W, 700 ­ 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for , TL104 GATE DUT 1 - 2 2 - 2 0 0 9 3 4 4 C102 4.7 pF TL112 TL115 C106 7.5 pF , S2 R805 C105 C104 C205 C206 C204 L2 L1 DUT C103 C102 C101 R102 C106 , Assembly Information DUT PCB PTFA220041M LTN/PTFA220041M Component LDMOS Transistor 0.508 mm , C101 Chip capacitor, 6.2 pF ATC 100A6R2CW150X C102 Chip capacitor, 4.7 pF ATC Infineon Technologies
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R804 LM7805 M SMD TRANSISTOR c801 TL217 TL103 C803
Abstract: Transistor 8 W, 700 â'" 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers , NC 4 2 3 6 7 5 C102 1000 pF S3 VDD 3 1 2 4 S2 L1 22 nH R106 , C102 C205 R102 R103 C204 S4 S5 C202 R106 S3 R104 S2 R107 R105 R201 L1 , (cont.) Circuit Assembly Information DUT PTFA220081M LDMOS Transistor PCB LTN/PTFA220081Mâ -
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tl201 w3 smd transistor
Abstract: Transistor 8 W, 700 ­ 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers , NC 3 6 7 5 C102 1000 pF S3 VDD 4 R106 510 Ohm C101 1000 pF R102 , Internal Distribution Reference Circuit, 920 ­ 960 MHz (cont.) R101 C103 C101 VDD C102 , Assembly Information DUT PTFA220081M LDMOS Transistor PCB LTN/PTFA220081M­9 0.508 mm Infineon Technologies
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NFM18Ps105 TRANSISTOR SMD w2 TL222 Transistor tl217 ATC100A6R2CW150X ATC100A0R3CW150X
Abstract: Transistor 4 W, 700 ­ 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for , TL111 3 1 1 TL109 C103 12 pF TL108 RF_IN 2 3 4 4 4 TL115 C102 , R803 S3 S2 R805 C105 C104 C103 C205 C206 C204 L2 L1 DUT C102 C101 R102 , Assembly Information DUT PTFA220041M LDMOS Transistor PCB LTN/PTFA220041M 0.508 mm [.020" , P/N C101 Chip capacitor, 6.2 pF ATC 100A6R2CW150X C102 Chip capacitor, 4.7 pF Infineon Technologies
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SMD r801 TL2082 TL218 transistor c803 3224W-202ECT-ND 445-1447-2-ND
Abstract: Transistor 12 W, 700 ­ 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended , TL106 C102 20 pF Reference circuit input schematic for = 877 MHz C201 2200000 pF TL209 , C101 C103 R101 R102 L2 C104 C102 PTFA220121M C205 RO4350, .020 C203 C204 (73) a , /PTFA220121M­8 Component LDMOS Transistor 0.508 mm [.020"] thick, r = 3.48 Rogers 4350 1 oz , ATC100A680JW150X C102 Chip capacitor, 20 pF ATC ATC100A200JW150X C103 Chip capacitor, 10 pF Infineon Technologies
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TL-205A DUT-11 c801 TL231 R250 national semiconductor regulator
Abstract: Transistor 4 W, 700 â'" 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended , ¸'  à¸' ï'° ï'° 2 3 4 4 4 TL115 C102 4.7 pF TL112 C107 7.5 pF Er , C206 C204 L2 L1 DUT C103 C102 C101 R102 C202 C203 C201 C207 C106 C107 , Circuit, 1842 MHz (cont.) Circuit Assembly Information DUT PTFA220041M LDMOS Transistor PCB , Description Suggested Manufacturer P/N C101 Chip capacitor, 6.2 pF ATC 100A6R2CW150X C102 -
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Abstract: Transistor 4 W, 700 ­ 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for , TL111 3 1 1 TL109 C103 12 pF TL108 RF_IN 2 3 4 4 4 TL115 C102 , R803 S3 S2 R805 C105 C104 C103 C205 C206 C204 L2 L1 DUT C102 C101 R102 , Assembly Information DUT PTFA220041M LDMOS Transistor PCB LTN/PTFA220041M 0.508 mm [.020" , P/N Chip capacitor, 6.2 pF ATC 100A6R2CW150X Input C101 C102 Chip capacitor, 4.7 Infineon Technologies
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TL114 TL107 TL101 RO4350B
Abstract: Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures 1 , / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm , Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures , Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-89-A32) 198 , Power Transistor (32V, 0.5A) 2SC2411K / 2SC4097 / 2SC1741S FFeatures 1) High Ic(Max.) IC(Max.) = 0.5A -
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SPEC-C37 SPEC-A38 2N3904 A41 c101 TRANSISTOR TRANSISTOR 246 transistor c101 2SC4043 TRANSISTOR 618 96-86-B11 2SC2412K 2SC4081 2SC4617 2SC1740S 2SA1037AK/2SA1576A/2SA1774/2SA933AS
Abstract: VDD 4 3 GND + C102 10uF Date: 08/03/2006 C101 100nF VDD Sheet: 1/3 , B C102, C201, C204, C208, C301, C307, C309, C312 NIC Components, NTCT106M16TRBF 1 DC , Switches 2 Pushbutton Switch SMD 1 NTC Thermistors 10K 10% 0805 7 NMOS Transistor BSS138 SOT23 2 PMOS Transistor IRLML6302 SOT23 SW101, SW102 Augat, FSM4JSMA Thermistors R101 Softec Microsystems
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HC49 MEGATEC transistor c317 TRANSISTOR C307 C312 diode smd capacitor philips 0805 capacitor 100nf 50v 0805 datasheet DEMO9RS08KA2 DC01098 LD103 LD102 LD101 NTC10K
Abstract: Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures 1 , / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-86-B11) 204 Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A , / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm , -D20) 280 Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K / 2SC4097 / 2SC1741S FFeatures 1 -
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609 transistor transistors C102 pnp TRANSISTOR 612 2n3904 TRANSISTOR PNP SST3904 2SB852K 2SA830S 2SD1383K 2SC1645S 96-118-B20 96-205-D20
Abstract: reduces the current through the opto-coupler LED, which also reduces the optocoupler transistor current , current through the optocoupler transistor becomes almost zero. Then, Vfb climbs up in a similar manner , standby mode, the picture ON signal is disabled and the transistor Q1 is turned off, which couples R3, Dz , signal is applied and the transistor Q1 is turned on, which de-couples R3, Dz and D1 from the feedback , mode 1. Schematic T1 EER3540 RT101 5D-9 C102 220uF 400V BD101 1 3 ZD101 18V Fairchild Semiconductor
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CQ1465RT CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT
Abstract: Transistor 12 W, 700 â'" 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended , 4 Er=3.48 H=20 mil RO/RO4350B1 C103 10 pF TL106 TL101 C104 16 pF C102 20 pF , C104 C102 RO4350, .020 PTFA220121M (73) à¸' à¸' à¸' à¸' à¸' à¸' à¸' à¸' à¸' à¸' à¸' à , ATC100A680JW150X C102 Chip capacitor, 20 pF ATC ATC100A200JW150X C103 Chip capacitor, 10 pF , Potentiometer, 2k W Digi-Key 3224W-202ECT-ND S4 Transistor Inineon Technologies BCP56 S5 -
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Abstract: Transistor 12 W, 700 ­ 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for , pF TL101 C102 20 pF Reference circuit input schematic for = 877 MHz C201 2200000 pF TL209 , C103 R101 R102 L2 C104 C102 C205 C203 C204 PTFA220121M Reference circuit assembly diagram , Reference Circuit, 877 MHz (cont.) Components Information Component Input C101 C102 C103 C104 C801, C802 , Resistor, 1300 W Resistor, 510 W Resistor, 2000 W EMI Suppression Capacitor Potentiometer, 2k W Transistor Infineon Technologies
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atc100a200jw LM7805 c SMD V4 MARKING
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