500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPS62222DDC Texas Instruments 0.88A SWITCHING REGULATOR, 1850kHz SWITCHING FREQ-MAX, PDSO5, PLASTIC, TSOT-23, 5 PIN visit Texas Instruments
TPS62222DDCT Texas Instruments 1.8-V Output, 400-mA, 95% Efficient Step-Down Converter, 15uA, ThinSOT-23 5-SOT-23-THIN -40 to 85 visit Texas Instruments Buy
TPS62222DDCRG4 Texas Instruments 1.8-V Output, 400-mA, 95% Efficient Step-Down Converter, 15uA, ThinSOT-23 5-SOT-23-THIN -40 to 85 visit Texas Instruments
TPS62222DDCR Texas Instruments 1.8-V Output, 400-mA, 95% Efficient Step-Down Converter, 15uA, ThinSOT-23 5-SOT-23-THIN -40 to 85 visit Texas Instruments
TPS62222DDCTG4 Texas Instruments 1.8-V Output, 400-mA, 95% Efficient Step-Down Converter, 15uA, ThinSOT-23 5-SOT-23-THIN -40 to 85 visit Texas Instruments
2-2221288-6 TE Connectivity Ltd RF C/A, SMPM Fl Mnt J-SMA R/A P 26 in. visit Digikey Buy

br 2222 npn

Catalog Datasheet MFG & Type PDF Document Tags

2222a

Abstract: tr 2222a 1 0 0 -7 T L /G /10100-1 NPN General Purpose Amplifier Electrical Characteristics T a Symbol OFF CHARACTERISTICS V (BR)CEO - 25°C unless otherwise noted Min Max Units Parameter , Current (Vce = 60V, VEb (o ffi = 3.0) 2222 2222A 2222 2222A 2222 2222A 2222A 2222 2222A 222 2222A 2222A 2222A 30 40 60 75 5.0 6.0 10 0.01 0.01 10 10 10 20 nA nA nA V (BR)CBO v (BR)EBO ICEX ICBO , ) (lc = 150 mA, VCE = ' 0V) (Note 1) dc = 500 mA, VCE = 10V) (Note 1) 2.0°/! 2222 2222A 35 50 75
-
OCR Scan

2m2222

Abstract: 2N2222 2N 2218 2N 2219 2N 2221 SILICON PLANAR NPN 2N 2222 HIGH-SPEED SWITCHES The 2N 2218, 2N 2219, 2N 2221 and 2N 2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N 2218 and 2N 2219) and in Jedec TO-18 (for 2N 2221 and 2N 2222) metal cases. They are designed for high-speed , °C for 2N 2218 and 2N 2219 0.8 W for 2N 2221 and 2N 2222 0.5 W at Tease < 25°C for 2N 2218 and 2N 2219 3 W for 2N 2221 and 2N 2222 1.8 W Tstg Storage temperature -65 to 200 °C Ti Junction
-
OCR Scan

N2222A

Abstract: 2N2221 2SC D â  023SbQS Q0Q4ÃÃà 7 «SIEG . NPN Silicon Planar Transistors 2 N 2221 A - -2 N 2222 A SIEMENS AKTIENGESELLSCHAF - 0 "7- 2 N 2221 A, and 2 N 2222 A are epitaxial NPN silicon , 2221 A Q62702-F414 2 N 2222 A Q62702-S122 Approx. weight 0.3 g Dimensions in mm Maximum ratings 2 N 2221 A 2 N 2222 A Collector-emitter voltage Vceo 40 V Collector-base voltage VCBO 75 V , N 2222 A SIEMENS AKTIENGESELLSCHAF- Static characteristics (7"amb = 25 °C) 2 N 2221 A 2 N 2222 A
-
OCR Scan
2N2221 N2222A 2221 n2222 20VTA br 2222 npn

A 933 S transistors

Abstract: br 2222 npn °C) 2 N 2220 2 N 2221 2 N 2222 Collector-base breakdown voltage (/c= 10nA) V(BR)CBO >60 >60 , 2SC D â  623SbOS QQQMÛÛb 3 *SIEG Z 5C CK886 D T-if'/f NPN Silicon Planar Transistors 2 N 2220 _2 N 2221 "SIEMENS AKTIENGESELLSCHAF 2 N 2222 2 N 2220, 2 N 2221, and 2 N 2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41 876). The collector is electrically , Ordering code 2 N 2220 Q68000-A4573 2 N 2221 Q62702-F134 2 N 2222 Q62702-F135 Approx. weight 0.33 g
-
OCR Scan
A 933 S transistors 2221-2N 2N2222 N 2222 npn 2222 n22222

2N2222Metal

Abstract: 2n2221 2N 2218 2N 2219 2N 2221 SILICON PLANAR NPN 31 2222 HIGH-SPEED SWITCHES The 2N 2218, 2N 2219, 2N 2221 and 2N 2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N 2218 and 2N 2219) and in Jedec TO-18 (for 2N 2221 and 2N 2222) metal cases. They are designed for high-speed , °C for 2N 2218 and 2N 2219 0.8 W for 2N 2221 and 2N 2222 0.5 W at Tease < 25°C for 2N 2218 and 2N 2219 3 W for 2N 2221 and 2N 2222 1.8 W Tstg Storage temperature -65 to 200 °C Tj Junction
-
OCR Scan
2N2222Metal 2n 2222 -31 2N 2222 222-1 2219 2N2218

222-1

Abstract: br 2222 npn 2SC D 023SbQS Q0Q4ÖÖÖ 7 « S I E G . . . 2 N 2221 A 2 N 2222 A - NPN Silicon Planar Transistors - -SIEMENS AKTIENGESELLSCH AF. 2 N 2221 A, and 2 N 2222 A are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically , 2221 A 2 N 2222 A Ordering code Q62702-F414 Q 62702 -S122 Approx. w eight 0.3 g Dim ensions in , ^CBO V'ebo 2 N 2221 A 2 N 2222 A 40 75 6 0.8 175 - 6 5 to + 2 0 0 0.5 1.8 V V V A °C °C W W T
-
OCR Scan
2222 A 2221A AF2N A4075 a2222a G--05

2n2222

Abstract: A2222 =10iiA V(BR)CBO 2N 2221 2N 2222 60 V 2N 2221 A 2N 2222 A 75 V Collector-emitter breakdown voltage Tension de claquage collecteur-émetteur lB =0 lc =10mA V * (BR)CEO 2N 2221 2N 2222 30 V 2N 2221 A 2N 2222 A 40 V Emitter-base breakdown voltage Tension de claquage émetteur-base 'c =° lE =10 juA V(BR , NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILICIUM. PLANAR EPITAXIAUX *2N 2221,A *2I\I 2222,A Compi, of 2N 2906, A - 2N 2907, A LF or BF small or large signal amplification
-
OCR Scan
A2222 2n2222a 2222a 2222 kn a amd 2907 amd 2906

transistor 2N 3904

Abstract: wiring boards. D w g No A 10.050A D w g No A-10 .0 51 A TPQ 2222 TPQ 2369 TPQ 3904 TPQA05 , Conditions Ve Min. o Part Number V (BR)CBO v (V) ¥ (BR>CEO (BR)EBO (V) (V) (nA) (V , Discrete Devices Four NPN Devices TPQ2222 60 40 5.0 50 50 75 100 30 10 150 300 , . (V) V BE Max. (V) @ lc (mA) Min. (MHz) fT Part Number V (BR)CBO (V ) v (BR)CEO (V ) v 'cB O (BR)EBO (V ) Conditions h FE 'c V CE (V ) Max (nA) @ V CB (V ) @ lc (mA
-
OCR Scan
transistor 2N 3904 TPQ2222A TPQ6427 TPQA06 TPQ2907 TPQ5401 TPQA56

br 2222 npn

Abstract: npn 2222 NPN Silicon Switching Transistors PZT 2222 PZT 2222 A High DC current gain: 0.1 mA to 500 mA , IC = 10 mA, IB = 0 PZT 2222 PZT 2222 A V(BR)CE0 Collector-base breakdown voltage IC = 10 µA, IB = 0 PZT 2222 PZT 2222 A V(BR)CB0 Emitter-base breakdown voltage IE = 10 µA, IE = 0 V , ) PZT 2222 PZT 2222 A ZT 2222 ZT 2222 A Q62702-Z2026 Q62702-Z2027 B SOT-223 C E C Maximum Ratings Parameter Symbol Values PZT 2222 PZT 2222 A Unit
Siemens
Original
tr 2222 pnp 2222 2222 PZT datasheet zt 2222 a 2222 NPN

lN2222

Abstract: N2222A ~~ , ,.;$:TQ:+$"' - - - nAdc OFF CHARACTERISTICS MPQ2221/2222 MPQ2221N2222A V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 pAdc, IE = O) MPQ2221/2222 MPQ2221N2222A V(BR)CBO Emitter-Base Breakdown Voltage (IB = 10 pAdc, IC = 0) MPQ2221/2222 MPQ2221 N2222A V(BR)EBO Collector , MW2221 MPQ2222 Mn2221A Mn2222A QUAD DUAL-IN-LINE NPN SILICON ANNULAR GENERAL-PURPOSE , ) @ Vcg = 50 Vdc High Collector Breakdown Voltages - V(gR)CEO = 40 Vdc (Min) V(BR)CBO = 60 Vdc
Motorola
Original
MPQ2221A MPQ2222A MPQ6001 lN2222 lN2222A CD79 PQ224 2N2222 die PQ6002 MPQ2221/2222

hps 2222a

Abstract: 2222A 2221A, 2222k NPN Silicon Epitaxial Planar Transistors 'Jtn with high cutoff frequency, for , 2221 hFE 20 - - - 2222 hFE 35 - - - atVcE = 10 V, lc = 1 mA 2221 hFE 25 - - - 2222 hFE 50 - - - atVce = 10 V, lc = 10 mA 2221 hpE 35 - - - 2222 hFE 75 - - - atVcE = 10 V, lc = 150 mA 2221 hFE 40 - 120 - 2222 hps 100 - 300 - atVcE = 10V, lc = 0.5A 2221 hpE 20 - 2222 hFE 30 - Collector , 50 V, Tamb = 125 °C IcBO - 10 ¡JL A Collector Base Breakdown Voltage at lc = 10/u.A V(BR)CBO 60
-
OCR Scan
hps 2222a 2222k 2222a NPN 2222A transistors

2N2222

Abstract: n22222 50 mA 2 N 2221, 2 N 2222 2 N 2221 A, 2 N 2222 A 'EBO U, u, (BR)CBO (BR)CBO *) 60 *) 75 ^ , ^W 2 N 2221 â'¢ 2 N 2221 A â'¢ 2 N 2222 â'¢ 2 N 2222 A Silizium-NPN-Epitaxial-Planar-Schalttransistoren Silicon NPN Epitaxial Planar Switching Transistors Anwendungen: HF-Verstärker und Schalter , Lagerungstemperaturbereich Storage temperature range CBO CEO yEBO tot ptot ptot ptot fstg 2 N 2221 2 N 2222 60 30 5 2 N 2221 A 2 N 2222 A 800 75 40 6 500 430 1,8 1,55 1 75 -65 . +200 V V V mA mW mW W W °C
-
OCR Scan
npn 2222 transistor 2n22222 rf 2222 Tfk 680 N2221A

mpq2222 motorola

Abstract: q2222 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors NPN Silicon [u i iip [ip n il nói m i t i MPQ2222 MPQ2222A* ` Motorola Preferred Device L /S J NPN lf \ i r v i , ollector-Em itter Breakdown VoltageO) (Iq = 10 mAdc, lg - 0) v (BR)CEO MPQ2222 MPQ2222A V(BR)CBO MPQ2222 MPQ2222A V(BR)EBO MPQ2222 MPQ2222A 'CBO MPQ2222 MPQ2222A 'ebo - Vdc 40 40 Vdc 60 75 - Vdc 5.0 6.0 , Motorola S m all-S ignal Transistors, FETs and Diodes Device Data M P Q 2222 M P Q 2222A ELECTRICAL
-
OCR Scan
mpq2222 motorola q2222 transistor 2222a ip 2222A 2222A MOTOROLA Q0T3232
Abstract: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A â'¢ High DC current gain , breakdown voltage /c = 10 nA SMBT 2222 SMBT 2222 A V(BR)CB0 Emitter-base breakdown voltage SMBT 2222 / e = 10 nA SMBT 2222 A V(BR|EB0 Collector cutoff current V cb = 50 V V cb = 60 V Vcb = , Package1) SMBT 2222 SMBT 2222 A S1B S1P Q68000-A6481 Q68000-A6473 B SOT-23 E C Maximum Ratings Parameter Symbol V ail es SMBT 2222 SMBT 2222 A Unit Co'llector-emitter -
OCR Scan
2222/A 0155S2S

Q68000-A4334

Abstract: breakdown voltage / E = 10 n A SM BT 2222 SM B T 2222 A max y , UT 32E D â  fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f â'¢ â'¢ â'¢ High D C , versions on 8 mm-tape Package S M B T 2222 SM BT 2222 A S1B S1P Q68000-A4335 Q68000-A4334 Q68000-A6481 Q68000-A6473 SOT 23 SOT 23 Maximum ratings Param eter Sym bol S M B T 2222
-
OCR Scan
QQ17222 SMOT2222A T-35-19 GD17223

2222 NPN

Abstract: br 2222 npn NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 , SMBT 2222 A V(BR)CE0 Collector-base breakdown voltage SMBT 2222 IC = 10 µA SMBT 2222 A V(BR)CB0 Emitter-base breakdown voltage SMBT 2222 IE = 10 µA SMBT 2222 A V(BR)EB0 Collector , ) SMBT 2222 SMBT 2222 A s1B s1P Q68000-A6481 Q68000-A6473 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit SMBT 2222 SMBT 2222 A Collector-emitter voltage VCE0
Siemens
Original
DSA0032624 2907 pnp MARKING s1P equivalent of 2222 NPN

2222a

Abstract: br 2222 npn NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 , SMBT 2222 IC = 10 mA SMBT 2222 A V(BR)CE0 Collector-base breakdown voltage SMBT 2222 IC = 10 µA SMBT 2222 A V(BR)CB0 Emitter-base breakdown voltage SMBT 2222 IE = 10 µA SMBT 2222 A , Package1) SMBT 2222 SMBT 2222 A s1B s1P Q68000-A6481 Q68000-A6473 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit SMBT 2222 SMBT 2222 A Collector-emitter voltage
Siemens
Original
2222av marking code sot-23 697 NPN transistors sot-23 26

2222 A

Abstract: npn 2222 SIEMENS NPN Silicon Switching Transistors PZT 2222 PZT 2222 A · High DC current gain: 0.1 mA to , mA, / b = 0 PZT 2222 PZT 2222 A V(BR)CE0 V 30 40 - lc = Collector-base breakdown voltage , ) PZT 2222 PZT 2222 A ZT 2222 ZT 2222 A Q62702-Z2026 Q62702-Z2027 B C E C SOT-223 Maximum Ratings Parameter Symbol PZT 2222 Val ues PZT 2222 A Unit Collector-emitter voltage , Outlines. 2) Package mounted on epoxy pcb 40 mm x 4 0 mm x 1.5 mm/6 cm2 Cu. SIEMENS PZT2222 PZT 2222
-
OCR Scan
EHW00007

2222a

Abstract: npn 2222 NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 , SMBT 2222 A V(BR)CE0 Collector-base breakdown voltage IC = 10 µA SMBT 2222 SMBT 2222 A V(BR)CB0 Emitter-base breakdown voltage IE = 10 µA SMBT 2222 SMBT 2222 A V(BR)EB0 Collector , ) SMBT 2222 SMBT 2222 A s1B s1P Q68000-A6481 Q68000-A6473 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit SMBT 2222 SMBT 2222 A Collector-emitter voltage VCE0
Siemens
Original

TF411

Abstract: t2222 -223 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring , NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter t a = 25°C unless otherwise noted Test C onditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IcEX IcBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown , d N M T 2222 ) Current Gain - Bandwidth Product Output Capacitance Input Capacitance Collector
-
OCR Scan
TF411 t2222 PN2222A le TF-411 PN2222A MMBT2222A MMPQ2222 NMT2222 PZT2222A
Showing first 20 results.