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br 123 s

Catalog Datasheet MFG & Type PDF Document Tags

Philips 2222 017 capacitors

Abstract: 2222 118 48102 Aluminum Electrolytic Capacitors Axial, Professional, Long Life w V v \ x s N ' Solid , Cor 10 000 h/105 Cor 32 000 h/85 C 118 | Series | ! Useful life S A L - R P M 128 S A L - A 123 Solid Aluminium Radial Solid Aluminium Pearls Miniature Axial 20 000 h/125 C 2 000 h/175 C 20 000 , 3* 4 5 16 S 00 01 01 02 03 04 05 ; ; 7 00 01 01 02 03 04 05 40 j 60 50 60 2A j , 0.13 BA AA BR 470C 18 X 30 1200 0 083 0 088 AA MR 10000 18x40 1900 0.048 0.042 AA MR 16 47 6.3 X 12.7
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CECC 30701-007 capacitor

Abstract: br 123 s , /20, /25 MIL-PRF-123 50V, 100V (BP, BX and BR) Style CKS05, CKS06, CKS11, CKS12, CKS14, CKS15, CKS16 , and S Failure Rate Level 50V, 100V, 200V (BR, BX, BT, BU and BV) Style CKR04, CKR05, CKR05V, CKR06 , , /05, /20, /21, /23 M, P, R and S Failure Rate Level 50V, 100V, 200V (CG, CH, BX and BR) Style CKR22 , , +15-25 RV) BR (+15-15% no voltage, +15-40 RV) Qual level MIL-C-123 MIL-C-123 MIL-C-123 Voltage , MIL-PRF-20 Established Reliability M, P, R and S Failure Rate Level 50V, 100V, 200V (CX, CK, CJ, CH, CG
AVX
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CECC 30701-007 capacitor br 123 s CECC 30801-005 test specification CECC 30701-007 88011 AVX CCR07 CAPACITOR CCR05 CCR05V CCR06 CCR06V CCR07 CCR08

br 123 s

Abstract: HT3030 152 N2200 123 153 562 682 332 472 BR 333 473 153 183 822 103 NPO 123 153 682 822 222 272 N2200 393 473 183 223 682 822 BR , 563 683 273 333 103 123 BR 5050 152 NPO 4040 .100â' BR 3030 , Wright Capacitors, Inc. Excellence. Personified 2610 S. OAK AVE. â'¢ SANTA ANA, CA 92707 â , products. 2610 S. OAK AVE. â'¢ SANTA ANA, CA 92707 â'¢ (714) 546-2490 â'¢ Fax: (714) 546-1709 â'¢ EMAIL
Wright Capacitors
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HT3030

oasis

Abstract: wd-xslo > Intel® Corporation Phone: (123) 456-7890 Fax: (123) 456-7890 Pager: (123) 456-7890 Cell: (123) 456-7890 1234 Some St. AnyTown, SomeState 00123 http , for HTML 2.0 allowing the use of extend the rules of XML when needed. s Since XML and HTML have the same parent, they share similarities: s new tags and attributes. The key here Both are , HTML Doc You mark up, data. s Both are text-based, meaning that the minimum you need to
Intel
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oasis wd-xslo database tag TTG22

Philips 2222 032 capacitors

Abstract: 2222 123 capacitor philips ; ±20% Maximum case size: 06.7 x 15.3 mm; Form BR Catalogue number: 2222 123 25109. _ Table 3 , 12314102 SAL-A FORM BR toi. ±20% 123 23479 123 23689 123 23151 123 23331 123 23681 123 23102 123 23152 , SAL-AG , 12310478 123 10688 12310109 12310159 12310229 123 10339 12310479 12310689 12310101 12310151 SAL-A FORM BR , 20229 123 20339 123 20479 123 20689 123 20101 12320151 SAL-AG
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Philips 2222 032 capacitors 2222 123 capacitor philips philips AXIAL ELECTROLYTIC capacitors Philips Electrolytic Capacitor 123 T40 16 ultrasonic Philips Electrolytic Capacitor axial STD-202

bc 20229

Abstract: capacitor BC 138 axial 15.3 mm; Form BR Catalogue number: 2222 123 25109. Q Table 3 Ordering information for 123 , 12314479 123 14689 12314101 12314151 12314221 123 14331 12314471 123 14681 12314102 SAL-A FORM BR toi , . ±10% level S 123 83479 123 83689 123 83151 123 83331 123 83681 123 83102 123 83152 123 84339 123 84479 , 10688 12310109 12310159 12310229 123 10339 12310479 12310689 12310101 12310151 SAL-A FORM BR toi ±20% , 123 20339 123 20479 123 20689 123 20101 12320151 SAL-AG
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bc 20229 capacitor BC 138 axial BC 2222 138 capacitor BC 021 axial capacitor electrolytic BC

br 123 s

Abstract: BAS54A the environment as our part th a s resp ponsibility Qua ality Polic cy Our goal is to e r , rectified current S . Softness factor ID .Stand-off reverse leakage current , V(BR)DSSâ'¦drain-source breakdown voltage Crssâ'¦â'¦reverse transfer capacitance , Tra ansient v voltage s suppress sors (TVS S) 600 Serie TVS S 0W es Surface-M Mount Fla SMA , e y d 8/20 μs, and exce ellent clam mping capability App plications s Con nsumer, com
Bruckewell Semiconductor
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BAS54A BR3005 MS15N50 BAS54C sod-23 OD-123 OD-523 OT-323 SC70-3 OT-363 SC70-6

TIC 122 Transistor

Abstract: bc 147 B transistor E G SIEMENS A K T IE N Û E S E L L S C H A F D BC121 BC B C 122 123 Static characteristics , (BR)CBO V(BR)EBO 5 >5 >5 BC 122 45 >5 nA nA nA V V V >20 >30 >5 , AKTIEN6ESELLSCHÂF ~ 121 BC 122 B C 123 T o ta l perm , p o w e r dissip ation v e rsu s tem p erature Ptoi = 1 , BC 122 BC 123 SIEMENS A K T IE N G E S E L L S C H A F O u tpu t c h a ra c te ris tic s I q = , o lle cto r cutoff cu rren t v e rsu s tem p e ratu re BC 121 BC 122 BC 123 iao =M 7 « m lj
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8C122 TIC 122 Transistor bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 BC-121 Q60203- X121-X9 X121-X4 X121-S6 X121-X6

BC 148 transistor

Abstract: transistor BC 147 C121 BC 122 -BC 123 BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar , 122 white, BC 123 red. The transistors are particularly intended for use in low noise AF amplifier , 122 blue BC 1231' BC 123 white BC 123 yellow BC 123 green , »23SbDS 00040^0 QBJSIEû D -"T" 39-/7 SIEMENS AKTIENÛESELLSCHAF BC121 BC 122 -BC 123 Static characteristics , 121 BC 122 BC 122 BC 122 BC 122 BC 122 BC 123 BC 123 BC 123 - BC 123 h hf E hFE ha "fe VBE mA
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8C121 transistor BC 147 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens BC1211 Q60203-Q60203 Q60203 X122-X9 X122-X4 X122-X10

6789ABC

Abstract: high (VGH). APPLICATIONS â'¢ Gate-in-Panel (GIP) LCD TVs and Monitors D#21;4 6D 123 64##31;!5 64#$%&5 123 6D 5 1245 64##31;!#23; 64#$% 123 6D #23; 1245 64#$%&' 64##31;!' 123 1245 64##31;!( 123 6789ABC D789EFA#16; #17;#18;AE#19; 6D ' 64#$%&( 6D ( 1245 64#$%&) 64##31;!) 123 1245 64##31;!* 64#$%&* 123 1245 D&1$%& D&1#31;! 123 1245 #20;#21;D#21;&$%& #20;#21;D#21;! 123 1245 #30;#31;D D#21;!D#21; 123 1245 124#23; 2!#30; #30;#31;D635 123 1#20;#21;#22; 1245 class="hl">123 #29;7BF#16;#30;#31;D D#21;!D#21;#16;"#16;1#20;#21;#22; #30;#31;D63
Texas Instruments
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TPS65197

transistor 45 f 123

Abstract: Q67000-S306 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 123 Typ. output , BSP 123 SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · VGS(th) = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 123 100 V 0.38 A 6 SOT-223 BSP 123 Type BSP 123 Ordering , -12-1996 BSP 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature
Siemens
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Q67000-S306 E6327 transistor 45 f 123 BSP123 BSP 17 D sot 223 marking code BSP
Abstract: ) Package 100 V 0.38 A 6â"¦ SOT-223 Ordering Code Q67000-S306 D BSP 123 Type BSP 123 S Marking BSP 123 Pin 4 Tape and Reel Information E6327 Maximum Ratings , BSP 123 SIPMOS ® Small-Signal Transistor â'¢ N channel â'¢ Enhancement mode â'¢ Logic Level , 1.7 1 05.99 BSP 123 Maximum Ratings Parameter Symbol Chip or operating temperature , V V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C 100 - - 0.8 1.5 2 VDS = Infineon Technologies
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transistor 45 f 123

Abstract: K1412 V 0.38 A 6 SOT-223 Ordering Code Q67000-S306 D BSP 123 Type BSP 123 S Marking BSP 123 Pin 4 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol , -1 0 10 10 10 10 10 10 10 10 s 10 tp Data Sheet 5 05.99 BSP 123 Typ , BSP 123 SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · VGS , BSP 123 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj
Infineon Technologies
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K1412 transistor 123

FB4A TDK

Abstract: REC18 TDK ) REC32AH REC32A 20kOe AC Br HCB HCJ (BH)max [mT] (kG) [kA/m , ) REC32A REC30 REC26A Br(kG) HCB(kOe) HCJ(kOe) (MGOe) 11.0 to 11.6 REC26 REC24 REC22 , / j341.fm (5/14) REC24FB4A 5 Br HCJ HCB Bd BdHd REC24 10,000G 6,200Oe 6,000Oe , ,900 0.32× 0.47=0.15 FB4A85% 0.15× 8.5=1.28 FB4A75% Bd FB4A 5 Hd S N 5 13 , =2.6 500 2,700 =0.27 10,000 2.6× 0.27=0.7 FB4A30% 0.7× 7.3=5.11 FB4A2% Bd FB4A Hd S
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FB4A TDK REC18 TDK tdk-2 O M 335 REC-26 6.000 hcj 2002/95/EC REC18

transistor 45 f 123

Abstract: E6327 V 0.38 A 6 SOT-223 Ordering Code Q67000-S306 D BSP 123 Type BSP 123 S Marking BSP 123 Pin 4 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol , -1 0 10 10 10 10 10 10 10 10 s 10 tp Data Sheet 5 05.99 BSP 123 Typ , BSP 123 SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · VGS , BSP 123 Maximum Ratings Parameter Symbol Chip or operating temperature Tj -55 . +
Infineon Technologies
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irfd120

Abstract: Qgs Qgd ^d(on) tr ld(off) t[ V d s = V qs »I d = 250 jiA V d s = 0 V, V qs = ± 20 V VDS = V(BR)DSS , T e m ic siiiconix_IRFD120/123 N-Channel Enhancement-Mode Transistors Part Number IRFD120 IRFD123 V(BR)DSS (V) r DS(on) (Q ) Product Summary 100 60 0.3 0.4 I d (A) 1.3 1.1 4-Pin DIP GOE s OE U a Top View o ^ It Ô s N-Channel MOSFET , °C Symbol V ds Vg S ÏD 1dm Pd ÏRFD120 100 ±20 1.3 0.8 5.2 1.0 0.4 -5 5 to 150 300 IRFD123 60 ± 20
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IRFD120/123 P-36852--R P-36852--

SAs SOT-23 marking

Abstract: marking BSs BSS 123 SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · VGS(th) = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6 SOT-23 SAs Type BSS 123 BSS 123 Ordering Code , -13-1996 BSS 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature , . Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25
Siemens
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Q62702-S512 Q67000-S245 SAs SOT-23 marking marking BSs SAS SOT23 marking "BSs" bss 108 BSS 123 E6433

transistor BR A 94

Abstract: marking BSs BSS 123 SIPMOS ® Small-Signal Transistor · N channel · Enhancement mode · Logic Level · VGS(th) = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6 SOT-23 SAs Type BSS 123 BSS 123 Ordering Code , BSS 123 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj , max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS VGS = 0 V, ID =
Infineon Technologies
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transistor BR A 94

028A5

Abstract: marking SAs SOT23 0.8.2.0V B S S 123 Pin 1 G Type BSS 123 Type BSS 123 BSS 123 b 0.17 A flDS(on) 6Q Package SOT-23 C O , 6 B S S 123 Unit °C K/W Therminal resistance, chip-substrate- reverse side 1 flthJSR DIN , 0.17 A fîDS(on) 3 4.5 6 10 !q s s Values typ. max. Unit ^(BR)DSS 100 ^GS(th) 0.8 bss - V , (on) Qss _ 4 Q)SS _ BSS 123 Values typ. max. Unit 9fs 0.08 Qss _ S 0.2 _ PF 65 85 , ^SD Values typ. max. B S S 123 Unit A _ _ . _ 0.17 0.68 V 0.85 1.3
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028A5 marking SAs SOT23 028A12 marking BSs sot23 siemens marking SAs SAs MARKING SOT23 SS123

87478

Abstract: aluminum solid capacitor mil std 15.3 mm; Form BR Catalogue number: 2222 123 25109. Table 3 UC (V) 6.3 Ordering , . ±10% level S SAL-AG(1) FORM BA tol. ±20% 123 65109 123 85159 123 85229 123 85339 123 , SAL-AG 2222 123 6. Form BA ±20% 2222 123 8. Form BA ±10%, level S Table 9 Test procedures and , BCcomponents DATA SHEET 123 SAL-A Aluminum electrolytic capacitors Solid Al, Axial Product , BCcomponents Product specification Aluminum electrolytic capacitors Solid Al, Axial 123 SAL-A
BC Components
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CCB032 87478 aluminum solid capacitor mil std aluminum marking code capacitors military 2222 10339 P125 MBB121
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