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Part : BC33825TA Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : BC33825TA Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0218 Price Each : $0.0254
Part : BC33825TA Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 1,826 Best Price : - Price Each : $0.28
Part : BC338 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 258 Best Price : $0.04 Price Each : $0.05
Part : BC338-25ZL1 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,000 Best Price : $0.04 Price Each : $0.05
Part : BC338-25ZL1G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 8,000 Best Price : $0.04 Price Each : $0.05
Part : BC33825BU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 4,380 Best Price : $0.03 Price Each : $0.04
Part : BC33825TA Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 15,800 Best Price : $0.03 Price Each : $0.04
Part : BC33840BU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 21,122 Best Price : $0.03 Price Each : $0.04
Part : BC338 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 3,890 Best Price : $0.0338 Price Each : $0.1125
Part : BC338 Supplier : Philips Semiconductors Manufacturer : Bristol Electronics Stock : 2,625 Best Price : $0.0338 Price Each : $0.1125
Part : BC338-16 A1 Supplier : Taiwan Semiconductor Manufacturer : RS Components Stock : 1,500 Best Price : £0.0130 Price Each : £0.0210
Part : BC338-25 A1 Supplier : Taiwan Semiconductor Manufacturer : RS Components Stock : 17,250 Best Price : £0.0140 Price Each : £0.0240
Part : BC338-25 A1 Supplier : Taiwan Semiconductor Manufacturer : RS Components Stock : 4,000 Best Price : £0.0140 Price Each : £0.0280
Part : BC338-40 A1 Supplier : Taiwan Semiconductor Manufacturer : RS Components Stock : 250 Best Price : £0.0140 Price Each : £0.0240
Part : BC338-40 A1 Supplier : Taiwan Semiconductor Manufacturer : RS Components Stock : 3,000 Best Price : £0.0140 Price Each : £0.0280
Part : BC33825TA Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 4,600 Best Price : £0.0210 Price Each : £0.0350
Part : BC338-16 Supplier : Diotec Manufacturer : TME Electronic Components Stock : 3,310 Best Price : $0.0157 Price Each : $0.0619
Part : BC338-25 Supplier : Diotec Manufacturer : TME Electronic Components Stock : 3,620 Best Price : $0.0157 Price Each : $0.0619
Part : BC338-40 Supplier : Diotec Manufacturer : TME Electronic Components Stock : 2,650 Best Price : $0.0157 Price Each : $0.0619
Part : BC338 Supplier : - Manufacturer : Chip One Exchange Stock : 2,000 Best Price : - Price Each : -
Part : BC338-25ZL1 Supplier : ON Semiconductor Manufacturer : Chip One Exchange Stock : 622 Best Price : - Price Each : -
Part : BC338-40 Supplier : Siemens Manufacturer : Chip One Exchange Stock : 2,529 Best Price : - Price Each : -
Part : BC338-40-E6325 Supplier : Siemens Manufacturer : Chip One Exchange Stock : 675 Best Price : - Price Each : -
Part : BC338/16 Supplier : - Manufacturer : Chip One Exchange Stock : 160 Best Price : - Price Each : -
Part : BC33825TA Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 1,866 Best Price : $0.03 Price Each : $0.1660
Part : BC33825TA Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 1,926 Best Price : £0.0367 Price Each : £0.1070
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bc338 Datasheet

Part Manufacturer Description PDF Type
BC338 Diotec Si-Epitaxial PlanarTransistors Original
BC338 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC338 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BC338 Fairchild Semiconductor Switching and Amplifier Applications Original
BC338 General Semiconductor Small Signal Transistors (NPN) Original
BC338 General Semiconductor General Purpose Bipolar Transistor, NPN, 25V, TO-92, 3-Pin Original
BC338 Infineon Technologies NPN Silicon AF Transistor Original
BC338 Korea Electronics TRANS GP BJT NPN 25V 0.8A 3TO-92 Original
BC338 Motorola Amplifier Transistor Original
BC338 Philips Semiconductors Small-signal Transistors Original
BC338 Siemens Cross Reference Guide 1998 Original
BC338 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BC338 Vishay Semiconductors Small Signal Transistors (NPN) Original
BC338 Vishay Telefunken TRANS GP BJT NPN 25V 0.8A 3TO-92 Original
BC338 Bharat Electronics Shortform Transistor Data Scan
BC338 Crimson Semiconductor Transistor Selection Guide Scan
BC338 Honey Technology NPN Silicon Epitaxial Planar Transistor Scan
BC338 ITT Semiconductors Transistors 1980 Scan
BC338 Korea Electronics General Purpose Transistor Scan
BC338 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan
Showing first 20 results.

bc338

Catalog Datasheet MFG & Type PDF Document Tags

BC337 pnp transistor

Abstract: TRANSISTOR BC337-25 PNP ; BC338 BC337A BC337-16; BC338-16 BC337-25; BC338-25 BC337-40; BC338-40 lc = 100 mA; VCE = 1 V; see Figs 2 , BC337-16; BC338-16. Fig.2 DC current gain; typical values. 1997 Mar 10 4 Philips Semiconductors , -\- 10-1 ì 10 102 |c(mA) 103 BC337-40; BC338-40. Fig.4 DC current gain; typical values. MBH722 , ; BC338 FEATURES â'¢ High current (max. 500 mA) â'¢ Low voltage (max. 60 V). APPLICATIONS â'¢ General , BC337A - 60 V BC338 - 30 V VcEO collector-emitter voltage open base BC337 - 45 V BC337A -
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BC337 pnp transistor TRANSISTOR BC337-25 PNP TRANSISTOR BC337-40 PNP bc3378 BC337-25 PNP transistor TRANSISTOR BC337-25 BC327 BC327A BC328 MAM182 BC3378-25 SC-43

BC337

Abstract: BC337 figure BC337-40-BULK or BC337-40-TAP Bulk / Ammopack BC338-16 hFE, 130 @ 300 mA BC338-16-BULK or BC338-16-TAP Bulk / Ammopack BC338-25 hFE, 200 @ 300 mA BC338-25-BULK or BC338-25-TAP Bulk / Ammopack BC338-40 hFE, 320 @ 300 mA BC338-40-BULK or BC338-40-TAP Bulk / Ammopack , 1 V, IC = 300 mA BC338-16 hFE 60 130 DC current gain (current gain group - 25) VCE = 1 V, IC = 300 mA BC338-25 hFE 100 200 DC current gain (current gain group - 40
Vishay Semiconductors
Original
BC337-16-BULK BC337-25-TAP BC337 figure CBC337 BC337 hfe cbc338 BC337 typical application BC337 leads BC337-16-TAP BC337-25-BULK 88/540/EEC 91/690/EEC

bc337-40 npn transistor

Abstract: BC337 gain BC337; BC338 BC337A BC337-16; BC338-16 BC337-25; BC338-25 BC337-40; BC338-40 DC current gain , decreases by about 2 mV/K with increasing temperature. M 8H721 BC337-16; BC338-16. Fig.2 DC current , plastic package. PNP complements: BC327, BC327A and BC328. PINNING PIN 1 2 3 BC337; BC337A; BC338 , voltage BC337 BC337A BC338 VCEO collector-emltter voltage BC337 BC337A BC338 !cm Pto, h FE MIN. MAX , collector current total power dissipation DC current gain BC337; BC338 BC337A transition frequency lc = 10
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bc337-40 npn transistor OF TRANSISTOR BC337 NPN TRANSISTOR BC337 40 transistor BC337-16 transistor bc337 npn NPN bc338 BC33S

BC337

Abstract: BC337 NPN transistor -40 REF. B Product-Rank BC338-16 BC338-25 BC338-40 A B C D E F G H J K K , BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant , -Mar-2011 Rev. B Symbol BC337 BC338 BC337 BC338 VCBO VCEO VEBO IC PD TJ, TSTG Ratings 50 30 , not be informed individually. Page 1 of 4 BC337 / BC338 NPN Plastic-Encapsulate Transistor , Collector to Base Breakdown BC337 Voltage BC338 Collector to Emitter Breakdown BC337 Voltage BC338
SeCoS
Original
BC337 NPN transistor transistor BC338 NPN Transistor TO92 300ma OF TRANSISTOR BC338 TRANSISTOR BC337-40 BC-337 100MH

BC337

Abstract: BC337 pnp transistor BC337 and BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors , specified. Symbol Value Unit Collector-Emitter Voltage BC337 BC338 VCES 50 30 V Collector-Emitter Voltage BC337 BC338 VCEO 45 25 V VEBO 5 V IC 800 mA ICM 1 , distance of 2 mm from case. Document Number 88159 8-Mar-02 www.vishay.com 1 BC337 and BC338 , - Collector-Emitter Cutoff Current BC337 BC338 BC337 BC338 ICES VCE = 45 V VCE = 25
Vishay Semiconductors
Original
pin configuration Bc337 PNP TRANSISTOR bc338 npn bc338 signal transistor BC337 NPN transistor datasheet bc337 transistor datasheet pin configuration Bc327

bc337

Abstract: bc338 00 160 250 630 250 400 630 u A DC current gain BC337-25/BC338-25 BC337-40/BC338-40 hFE(2) V , =25°C u n le s s o th e rw is e s p e c ifie d ) BC337 Collector-base breakdown voltage BC338 BC337 Collector-emltter breakdown voltage BC338 Emitter-base breakdown voltage BC337 Collector cut-off current BC338 BC337 Collector cut-off current BC338 Emitter cut-off current BC337/BC338 BC337-16/BC338-16 hFE(1) V ce = 1 V, lc , MCC TO-92 Plastic-Encapsulate Transistors ^ BC337(BC338),-16,-25,-40 TRANSISTOR(NPN) FEATURES
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TRANSISTOR bc337 40 BC338 TRANSISTOR BC33840 BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40

BC338-25

Abstract: BC337 leads pro Typ BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 120 [%] 100 80 60 , BC337 / BC338 BC337 / BC338 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial , gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC337 BC338 , / BC338 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. VBE ­ ­ , BC338 ICES ICES ­ ­ 2 nA 2 nA 100 nA 100 nA VCE = 45 V, Tj = 125°C, (B-E short) VCE
Diotec
Original
BC337 CBE BC337-16 CBE BC337-25 CBE 10D3 UL94V-0

OF TRANSISTOR BC338

Abstract: BC33825TA qualification data Product BC338 BC33816BU BC33816TA BC33825BU BC33825TA BC33840BU BC33840TA BC338BU BC338TF , -Digit Date Code) Line 2: BC338 Line 1: BC338 Line 2: 16 Line 3: -&3 This page Print version BC33816BU , -92 3 AMMO Line 1: BC338 Line 2: 16 Line 3: -&3 BC33825BU Full Production $0.0296 TO-92 3 BULK Line 1: BC338 Line 2: 25 Line 3: -&3 BC33825TA Full Production $0.0296 TO-92 3 AMMO Line 1: BC338 Line 2: 25 Line 3: -&3 BC33840BU Full Production $0.0296 TO
Fairchild Semiconductor
Original
BC337/338 BC327/BC328 BC338TFR

BC337 pnp transistor

Abstract: st bc337 ST BC337. BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier , ST BC338 VCBO 30 V ST BC337 VCEO 45 V ST BC338 VCEO 25 V VEBO , : 14/05/2005 ST BC337 . BC338 Characteristics at Tamb=25 OC Symbol Min. Typ. Max , at VCB=50V ST BC338 ICBO - 2 100 nA O ST BC337 ICBO - - 10 A O ST BC338 ICBO - - 10 A ST BC337 V(BR)CEO 45 - - V ST BC338
Semtech Electronics
Original
st bc337 bc338 complementary

8C337

Abstract: 8C327 hFE 100 to 600 BC337A hfe 100 to 400 8C337-16 I BC338-16 1 hFE 100 to 250 BC337-25 1 BC338-25 1 â'¢ hFE 160 to 400 BC337-40 i BC338-40 ) hFE 250 to 600 typ. 200 MHz typ. 5 pF VBE decreases by abour , li&b-SW . BC337xc. BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in , amplifiers. The 8C337, BC337A, BC338 are complementary to the 8C327, 3C327A and BC328 respectively. QUICK REFERENCE DATA 8C337 8C337A BC338 Collector-emitter voltage (Vg£ = 0) VCES max. 50 60 30 V
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3C337 8c33 sc337
Abstract: BC337L-xx-T92-B BC337G-xx-T92-B BC337L-xx-T92-K BC337G-xx-T92-K BC338L-xx-T92-B BC338G-xx-T92-B BC338L-xx-T92-K BC338G-xx-T92-K Note: Pin Assignment: C: Collector B: Base E: Emitter  Package TO , UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER , Technologies Co., LTD BC338 1 of 3 QW-R201-039.E BC337/BC338  NPN SILICON TRANSISTOR , operation is not implied. BC337 BC338 BC337 BC338  THERMAL DATA PARAMETER Junction to Unisonic Technologies
Original
BC327/328 BC337L- BC337G- BC338L-

BC337

Abstract: TRANSISTOR BC337-25 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 100 100 160 250 60 630 250 400 630 , BC337/338 BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 FEATURES Power dissipation , Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range 2 , conditions MIN TYP MAX UNIT Ic= 100µA, IE=0 BC337 50 V BC338 30 V 45 V 25 V 5 V Collector-emitter breakdown voltage BC337 IC= 10 mA , IB=0 VCEO BC338
WEJ Electronic
Original
TRANSISTOR bc337 BC337 equivalent bc337 transistor equivalent for BC337 transistor bc33740

bc3378

Abstract: TRANSISTOR BC337-25 PNP 100 - 400 BC337-16; BC338-16 100 - 250 BC337-25; BC338-25 160 - 400 BC337-40; BC338-40 250 - 600 40 - - BC337; BC338 hFE DC current gain , pagewidth hFE 160 VCE = 5 V 120 80 40 0 10-1 1 10 BC337-16; BC338-16. Fig.2 DC , , full pagewidth hFE 400 VCE = 5 V 300 200 100 0 10-1 1 10 BC337-40; BC338-40. , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337; BC337A; BC338 NPN
Philips Semiconductors
Original
mar 722 BC337 Philips BC338 philips BC337 sot54 bc337 texas NPN general purpose transistor BC337 SCA53

BC337 MOTOROLA

Abstract: BC337 Symbol v CEO v CBO v EBO BC337 45 50 5.0 800 625 5.0 1.5 BC338 25 30 Unit Vdc Vdc Vdc m Adc mW m W cC W , Characteristic V(BR)CEO BC337 BC338 V IBRICES BC337 BC338 V(BRIEBO ICBO BC337 BC338 ic e s - - Vdc 45 25 50 30 5.0 Vdc - - - - - - Vdc nAdc - - - 100 100 nAdc BC337 BC338 'ebo - - - - 100 100 100 nAdc hpE BC337 BC338 BC337-16'BC338-16 BC337-25'BC338 , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-75 BC337, -16, -25, -40, BC338, -16, -25, -40 FIGURE 1 - T H
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BC337 MOTOROLA BC337-40BC338-40
Abstract: BC338 Emitter cut-off current DC current gain BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 100 100 160 250 60 630 250 400 630 VCE= 5V, IC= 10mA Transition , TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) TO-92 BC338, -16 , =25â"ƒ) 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage BC337 50 V VCBO: BC338 30 , =0 BC337 50 V BC338 30 V 45 V 25 V 5 V IC= 10 mA , IB Bytes
Original

BC331

Abstract: BC331 transistor -16 I BC338-16 1 BC337-25 1 BC338-25 / BC337-40 BC338-40 Transition frequency at f = 35 MHz lc= 10 , 1 BC337 BC337A BC338 PHILIPS INTERNATIONAL SbE D â  SILICON PLANAR EPITAXIAL TRANSISTORS , driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively. QUICK REFERENCE DATA BC337 BC337A BC338 Collector-emitter voltage , .S max Is uncontrolled Capability approved to CECC NECC-C-002 June 1992 111 BC337 BC337A BC338 .
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BC331 BC331 transistor transistor BC331 BC337-26 7267IU2 T-29-23

BC337 leads

Abstract: pin configuration PNP transistor BC327 BC337 and BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors , specified. Symbol Value Unit Collector-Emitter Voltage BC337 BC338 VCES 50 30 V Collector-Emitter Voltage BC337 BC338 VCEO 45 25 V VEBO 5 V IC 800 mA ICM 1 , distance of 2 mm from case. Document Number 88159 8-Mar-02 www.vishay.com 1 BC337 and BC338 , - Collector-Emitter Cutoff Current BC337 BC338 BC337 BC338 ICES VCE = 45 V VCE = 25
Vishay Semiconductors
Original
pin configuration PNP transistor BC327 BC337AND

bc337 pin out diagram

Abstract: BC337 BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon http://onsemi.com , BC337, BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , ) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337-16 BC337-25/BC338-25 , -40, BC338-25 1000 IC, COLLECTOR CURRENT (mA) 1.0 s 1.0 ms TJ = 135°C 100 ms dc TC = 25°C 100 dc TA = 25 , ://onsemi.com 3 BC337, BC337-16, BC337-25, BC337-40, BC338-25 ORDERING INFORMATION Device BC337 BC337RL1
ON Semiconductor
Original
bc337 pin out diagram BC33740 BC337 pin out bc33725 bc33716 BC-337-16 BC337/D

bc337 pin out diagram

Abstract: BC337 figure BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon http://onsemi.com , , BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337-16 BC337-25/BC338-25 BC337-40 100 100 160 250 60 , Figure 1. Thermal Response http://onsemi.com 2 BC337, BC337-16, BC337-25, BC337-40, BC338-25 , , BC337-16, BC337-25, BC337-40, BC338-25 ORDERING INFORMATION Device BC337 BC337RL1 BC337ZL1 BC337
ON Semiconductor
Original
bc33

bc337

Abstract: NPN transistor 500ma TO-92 -92 TO-92 Part No. BC337-16 A1 BC337-16 A1G BC337-25 A1 BC337-25 A1G BC337-40 A1 BC337-40 A1G BC338-16 A1 BC338-16 A1G BC338-25 A1 BC338-25 A1G BC338-40 A1 BC338-40 A1G Packing 4K/box 4K/box 4K/box 4K/box 4K , 150 BC338 30 25 Units mW V V V A mA °C Version:A12 BC337-16/25/40BC338-16/25/40 NPN , Voltage Collector Cut-off Current DC current gain current gain Group16 25 40 BC337 BC338 BC337 BC338 BC337 BC338 IC= 100A IC= 2mA IE= 100A VCB=50V VCB=30V VCE=1V VCE=1V VCE=1V IC=500mA VCE= 1V V CE=5V IC
Taiwan Semiconductor
Original
NPN transistor 500ma TO-92 Transistor A12 NPN Transistor TO92 NPN transistor to-92 "high gain" MIL-STD-202 A/300

c33725

Abstract: c33740 BC337 and BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors , specified. Symbol Value Unit Collector-Emitter Voltage BC337 BC338 VCES 50 30 V Collector-Emitter Voltage BC337 BC338 VCEO 45 25 V VEBO 5 V IC 800 mA ICM 1 , distance of 2 mm from case. Document Number 88159 8-Mar-02 www.vishay.com 1 BC337 and BC338 , - Collector-Emitter Cutoff Current BC337 BC338 BC337 BC338 ICES VCE = 45 V VCE = 25
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c33725 c33740 Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1

c 337 25

Abstract: 337 marking code plastic package. PNP complements: BC327, BC327A and BC328. PINNING PIN 1 2 3 BC337; BC337A; BC338 , voltage BC337 BC337A BC338 VCEO collector-emltter voltage BC337 BC337A BC338 !cm Pto, h FE MIN. MAX , collector current total power dissipation DC current gain BC337; BC338 BC337A transition frequency lc = 10 , BC337; BC337A; BC338 PARAMETER collector-base voltage BC337 BC337A BC338 collector-emitter voltage , ICBO BC337; BC337A; BC338 PARAMETER collector cut-off current emitter cut-off current DC current
Siemens
Original
c 337 25 337 marking code c 33740 337-40 338 marking code bc 337 equivalent Q62702-C314-V2 Q62702-C314-V3

c 337 25

Abstract: NPN 337 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337; BC337A; BC338 NPN , transistors BC337; BC337A; BC338 FEATURES PINNING · High current (max. 500 mA) PIN · Low , V BC337 - 45 V BC337A - 60 V BC338 - 25 V - 1 A - 625 mW BC337; BC338 100 600 BC337A 100 400 100 - BC338 VCEO , specification NPN general purpose transistors BC337; BC337A; BC338 LIMITING VALUES In accordance with
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NPN 337 bc 170 c BC 337 bc 170 bc 338 AF200

BC337

Abstract: BC338-25 BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon http://onsemi.com , 5.0 800 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C 3 EMITTER · Pb-Free Package is , BC337, BC337-16, BC337-25, BC337-40, BC338-25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , ) BC338 Collector -Emitter Breakdown Voltage (IC = 100 mA, IE = 0) BC338 Emitter -Base Breakdown Voltage , ) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337 BC337-16 BC337-25/BC338
ON Semiconductor
Original
BC327-16 BC337-40RL1 bc327-40 cbc327 BC327-25 BC327-40 BC327/D BC337-16RL1 BC337-16ZL1
Abstract: 12 ­55 to +150 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C BC337, BC337-16, BC337-25, BC337-40, BC338-25 1 2 3 CASE 29­04, STYLE 17 TO­92 (TO­226AA) THERMAL CHARACTERISTICS , = 0) BC337 BC338 ICES BC337 BC338 IEBO ­ ­ ­ ­ ­ ­ 100 100 100 nAdc V(BR)CEO BC337 BC338 V(BR)CES BC337 BC338 V(BR)EBO ICBO ­ ­ ­ ­ 100 100 nAdc 50 30 5.0 ­ ­ ­ ­ ­ ­ Vdc nAdc 45 25 ­ ­ ­ ­ Vdc Vdc , : BC337/D BC337, BC337­16, BC337­25, BC337­40, BC338­25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless -
OCR Scan
Showing first 20 results.