NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Respective Manufacturer AUER PHILIPS/DISCRETE BB405B BB405B tlE D J bbS3S31 D02bms 700 BAPX ratings Limiting ... | OCR Scan |
3 pages, |
BB405B BB405B abstract |
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| Abstract: are interchangeable. Accessories: 56246 (distance disc). December 1990 215 bbS3S31 0G3SÛS2 TEI ... | OCR Scan |
2 pages, |
IEC134 2N3823 2N3823 abstract |
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| Abstract: bbS3S31 0024486 7bfl HAPX N AMER PHILIPS/DISCRETE b?E D _ RATINGS Limiting values in accordance with ... | OCR Scan |
5 pages, |
L7E transistor IEC134 BC868-25 BC868-16 BC868-10 BC868 BC868/BC869 BC868 abstract |
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| Abstract: b^E » High voltage soft recovery rectifier diode bbS3S31 002mfl4 TT7 BY505 BY505 IAPX I 200 ... | OCR Scan |
3 pages, |
IEC134 BY505 BY505 abstract |
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| Abstract: N AUER PHILIPS/DISCRETE b^E D â- bbS3S31 D[]276flb 2^0 BSV64 BSV64 IAPX A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended -for use as a print hammer drive. It has good high current saturation characteristics. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max. 100 V Collector-emitter voltage (open base) vCEO max. 60 V Collector current (peak value) 'CM max. 5,0 A Total power dissipation up to Tcase = 50 °C ptot max. 5,0 W Junction ... | OCR Scan |
5 pages, |
BSV64 BSV64 abstract |
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| Abstract: April 1991 This Material Copyrighted By Its Respective Manufacturer 497 â- bbS3S31 ODSMblfa 333 HAPX ... | OCR Scan |
4 pages, |
BCX70K BCX70J BCX70H BCX70G BCX70 B2M marking BCX70 abstract |
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| Abstract: soft-recovery rectifier diodes bTE D â- bbS3S31 GD2b52G 7bô BY705 BY705 BY706 BY706 J IJJI L A IAPX if (mA) 100 1 ... | OCR Scan |
3 pages, |
BY706 BY705 BY706 abstract |
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| Abstract: â- bbS3S31 0Q24B7 0Q24B7Ã- TS? HAPX N AHER PHILIPS/DISCRETE b?E D BAS28 BAS28 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 BAS28 consists of two separate diodes in one microminiature envelope intended for surface mounting. It concerns fast-switching general-purpose diodes. QUICK REFERENCE DATA Continuous reverse voltage vr max. 75 V Repetitive peak reverse voltage VRRM max. 85 V Repetitive peak forward current â- frm max. 500 mA Junction temperature Tj max. 150 °C Forward voltage at lp = 50 mA vf < 1,0 V ... | OCR Scan |
4 pages, |
oscilloscope pc BAW62 BAS28 0Q24B7 0Q24B7 abstract |
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| Abstract: compound - 60 1.25 K/W K/W April 1993 350 N AMER PHILIPS/DISCRETE b'ìE D Philips Semiconductors bbS3S31 ... | OCR Scan |
5 pages, |
T0220AB BUK455-400B BUK455-400B abstract |
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| Abstract: Manufacturer â- bbS3S31 002427b 1A4 BAPX Silicon planar epitaxial high-speed diodes _N AMER PHILIPS/DISCRETE ... | OCR Scan |
8 pages, |
BAS21 BAS20 BAS19 BAS19 JPp BAS19 BAS19 abstract |
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| Abstract: decreases by about 2,3 mV/K with increasing temperature. 358 August 1991 Y bbS3S31 â-¡03MS3b This Material ... | OCR Scan |
7 pages, |
BD944 BD943 BD945 bd947 b0945 BD944 abstract |
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| Abstract: blE » bbS3S31 DQ3S47S DQ3S47S 123 «APX RATINGS Limiting values in accordance with the Absolute Maximum ... | OCR Scan |
6 pages, |
ei ferrite core OM2050 OM2050 abstract |
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| Abstract: Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE fciTE D bbS3S31 DQBtTbM bl3 â- APX ... | OCR Scan |
5 pages, |
BAS70-01 bas70 SOD123 SMD BAS70-01 abstract |
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