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bbS3S31

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Abstract: II CHARACTERISTICS bbS3S31 Q027334 Q027334 3 l l H A P X ff h*\E J > (Tj = 25 °C unless , N AMER PHILIPS/DISCRETE b IA14U IA14U s t m t s b 'lE ]> bbS3S31 002733b 150 « A P X ... OCR Scan
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9 pages,
324.66 Kb

00B7331 BTA140 TEXT
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Abstract: bTE D bbS3S31 QD2blb3 MET H A P X BA423 BA423 N AUER P H I L I P S / D I S C R E T E _ / SILICON A.M. BAND SWITCHING DIODE The BA423 BA423 Is a switching diode in hermetically sealed glass DO-34 DO-34 envelope. Intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA Continuous reverse voltage VR max. Forward current (d.c.) IF max. 20 V 50 mA max. 150 °C cd < 2,5 pF rs < 1,2 n Junction temperature Ti Diode ;apacitance at f = 1 MHz Vr = 3 V ... OCR Scan
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2 pages,
54.05 Kb

BA423 TEXT
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Abstract: 1981 377 N AUER P H I L I P S / D I S C R E T E b=JE J > bbS3S31 OOSbm s M IT H A P ... OCR Scan
datasheet

2 pages,
42.17 Kb

TEXT
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Abstract: N AI1ER PHILIPS/DISCRETE bTE bbS3S31 □D27flflb 2^0 » A IAPX BSV64 BSV64 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as a print hammer drive. It has good high current saturation characteristics. QUICK REFERENCE DATA Collector-base voltage (open emitter) v CBO max. Collector-emitter voltage (open base) v CEO max. 60 V Collector current (peak value) 'CM max. 5,0 A Total power dissipation up to Tcase ... OCR Scan
datasheet

5 pages,
155.32 Kb

TEXT
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Abstract: Copyrighted By Its Respective Manufacturer AUER PHILIPS/DISCRETE BB405B BB405B tlE D J bbS3S31 D02bms 700 BAPX ... OCR Scan
datasheet

3 pages,
59.35 Kb

BB405B TEXT
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Abstract: /DISCRETE Silicon EHT soft-recovery rectifier diodes bTE D ■ bbS3S31 GD2b52G 7bô BY705 BY705 BY706 BY706 J IJJI L ... OCR Scan
datasheet

3 pages,
61.24 Kb

sod61 brown BY706 BY705 TEXT
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Abstract: /DISCRETE b^E » High voltage soft recovery rectifier diode bbS3S31 002mfl4 TT7 BY505 BY505 IAPX I 200 ... OCR Scan
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3 pages,
70.15 Kb

IEC134 BY505 TEXT
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Abstract: interchangeable. Accessories: 56246 (distance disc). December 1990 215 bbS3S31 0G3SÛS2 TEI This Material ... OCR Scan
datasheet

2 pages,
46.42 Kb

transistor 2N3823 IEC134 2N3823 TEXT
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Abstract: temperature 150 °c SYMBOL PARAMETER 107 CONDITIONS ■ bbS3S31 0024355 45T ,N AMER ... OCR Scan
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5 pages,
106.19 Kb

QQ242S4 TEXT
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Abstract: ■ bbS3S31 0Q24B7 0Q24B7Ö TS? HAPX N AHER PHILIPS/DISCRETE b?E D BAS28 BAS28 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 BAS28 consists of two separate diodes in one microminiature envelope intended for surface mounting. It concerns fast-switching general-purpose diodes. QUICK REFERENCE DATA Continuous reverse voltage vr max. 75 V Repetitive peak reverse voltage VRRM max. 85 V Repetitive peak forward current ■frm max. 500 mA Junction temperature Tj max. 150 °C Forward voltage at lp = 50 mA vf < 1,0 V ... OCR Scan
datasheet

4 pages,
99.73 Kb

oscilloscope pc BAW62 BAS28 0Q24B7 TEXT
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Abstract: N AUER PHILIPS/DISCRETE b^E D ■ bbS3S31 D[]276flb 2^0 BSV64 BSV64 IAPX A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended -for use as a print hammer drive. It has good high current saturation characteristics. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max. 100 V Collector-emitter voltage (open base) vCEO max. 60 V Collector current (peak value) 'CM max. 5,0 A Total power dissipation up to Tcase = 50 °C ptot max. 5,0 W ... OCR Scan
datasheet

5 pages,
121.59 Kb

BSV64 TEXT
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Abstract: - Fig. 8 S.B. voltage multiplying factor at the Icmax level. 614 March 1979 bbS3S31 0034773 ... OCR Scan
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7 pages,
261.33 Kb

BDT91 BDT93 BDT95 TEXT
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Abstract: MHz bbS3S31 0Q2bQ5b 3QT « A P X Philips Semiconductors Objective specification NPN ... OCR Scan
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3 pages,
95.49 Kb

TEXT
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Abstract: p2A 1 April 1991 1967 bbS3S31 DOSS']? 364 « A P X PXT3906 PXT3906 N AMER PHILIPS/DISCRETE ... OCR Scan
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3 pages,
80.04 Kb

TEXT
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